A Transient π-π or Cation-π Interaction between Degron and Degrader Dual Residues: A Key Step for the Substrate Recognition and Discrimination in the Processive Degradation of SulA by ClpYQ (HslUV) Protease in Escherichia coli.

The Escherichia coli ATP-dependent ClpYQ protease constitutes ClpY ATPase/unfoldase and ClpQ peptidase. The Tyr91st residue within the central pore-I site of ClpY-hexamer is important for unfolding and translocating substrates into the catalytic site of ClpQ. We have identified the degron site (GFIMRP147th) of SulA, a cell-division inhibitor recognized by ClpYQ and that the Phe143rd residue in degron site is necessary for SulA native folded structure. However, the functional association of this degron site with the ClpYQ degrader is unknown. Here, we investigated the molecular insights into substrate recognition and discrimination by the ClpYQ protease. We found that the point mutants ClpYY91FQ, ClpYY91HQ, and ClpYY91WQ, carrying a ring structure at the 91st residue of ClpY, efficiently degraded their natural substrates, evidenced by the suppressed bacterial methyl-methane-sulfonate (MMS) sensitivity, the reduced ß-galactosidase activity of cpsB::lacZ, and the lowest amounts of MBP-SulA in both in vivo and in vitro degradation analyses. Alternatively, mimicking the wild-type SulA, SulAF143H, SulAF143K and SulAF143W, harboring a ring structure or a cation side-group in 143rd residue of SulA, were efficiently degraded by ClpYQ in the bacterial cells, also revealing shorter half-lives at 41 °C and higher binding affinities towards ClpY in pull-down assays. Finally, ClpYY91FQ and ClpYY91HQ, were capable of effectively degrading SulAF143H and SulAF143K, highlighting a correspondingly functional interaction between the SulA 143rd and ClpY 91st residues. According to the interchangeable substituted amino acids, our results uniquely indicate that a transient π-π or cation-π interaction between the SulA 143rd and ClpY 91st residues could be aptly gripped between the degron site of substrates and the pore site of proteases (degraders) for substrate recognition and discrimination of the processive degradation.

Dual bio-degradative pathways of di-2-ethylhexyl phthalate by a novel bacterium Burkholderia sp. SP4.

Burkholderia sp. SP4, isolated from agricultural soils, has a high capability of degrading di-2-ethylhexyl-phthalate (DEHP). It degrades up to 99% of DEHP (300 mg l-1) in minimal salt (MS) media within 48 h without adding additionally auxiliary carbon source. The optimal conditions for SP4 to degrade DEHP are determined to be at 35 °C and pH 6.0. Supplementation of glucose (3.0 g l-1), sodium dodecyl sulfate (SDS) (0.2%), peptone (0.5 g l-1), or non-ionic surfactant Brij 35 (0.2%, 0.5% or 1%) in MS-DEHP media increases the DEHP degradation activity. Furthermore, kinetic analyses for DEHP degradation by SP4 reveals that it is a first-order reaction, and the half-life analyses also demonstrates that SP4 has a better degradative activity compared to other previously identified microbes. By means of HPLC-ESI-QTOF-MS, the metabolic intermediates of DEHP are identified for SP4, which include mono-2-ethylhexylphthalate (MEHP), mono-butyl phthalate (MBP), phthalic acid (PA), salicylic acid (SA), and 4-oxo-hexanoic acid. The presence of SA indicates that SP4 can consume DEHP using a dual biodegradation pathway diverged from the isomeric products of benzoate. Taken together, our study identifies a resilient DEHP-degradable bacterium and characterizes a novel degradation pathway for DEHP biodegradation. We plan to build on this finding in the context of removing DEHP from various environments.

A THz Waveguide Bandpass Filter Design Using an Artificial Neural Network.

This paper presents a 300 GHz waveguide bandpass filter based on asymmetric inductive irises. The coupling matrix synthesis technique is used to design a 6-pole Chebyshev filter. In addition, an artificial neural network is applied to provide the filter geometries using the desired frequency response. The optimized filter is fabricated by the computer numeric controlled milling process. The measurement results show that the insertion loss is less than 3 dB and the return loss is better than 17 dB in the range 276-310 GHz.

Enhanced Heat-Electric Conversion via Photonic-Assisted Radiative Cooling.

In this paper, an inorganic polymer composite film is proposed as an effective radiative cooling device. The inherent absorption is enhanced by choosing an appropriately sized SiO2 microsphere with a diameter of 6 µm. The overall absorption at the transparent window of the atmosphere is higher than 90%, as the concentration of SiO2-PMMA composite is 35 wt%. As a result, an effective radiative device is made by a spin coating process. Moreover, the device is stacked on the cold side of a thermoelectric generator chip. It is found that the temperature gradient can be increased via the effective radiative cooling process. An enhanced Seebeck effect is observed, and the corresponding output current can be enhanced 1.67-fold via the photonic-assisted radiative cooling.

Effects of Different Oxidation Degrees of Graphene Oxide on P-Type and N-Type Si Heterojunction Photodetectors.

Oxygen-containing functional groups in graphene oxide (GO), a derivative of graphene, can widen the bandgap of graphene. In this study, we varied the amount of hydrogen peroxide used to prepare GO samples with different degrees of oxidation. Transmittance measurement, Raman spectroscopy, and X-ray photoelectron spectroscopy were used to completely characterize the change in oxidation degree. The effects of oxidation degree on p-type and n-type Si heterojunction photodetectors were compared. Notably, GO with a lower oxidation degree led to a larger photoresponse of p-type Si, whereas that with a higher oxidation degree achieved a larger photoresponse of n-type Si.

Graphene oxide as the passivation layer for Cu(x)O photocatalyst on a plasmonic Au film and the corresponding photoluminescence study.

The contribution of graphene oxide (GO) on photocatalytic effects of Cu(x)O on plasmonic Au is investigated. It is found that the H(2) evolution rate from pure water is enhanced 1.4 fold using the visible-active Cu(x)O/GO photocatalyst, as compared with Cu(x)O without GO. In addition, the intensity of photoluminescence of Cu(x)O/GO can be enhanced as much as 2.85 fold as compared with Cu(x)O without GO. The enhancement is due to the negative fixed charge in GO, which can passivate the surface of Cu(x)O and suppress recombination of minority electrons at the surface. The results from optical characterization in this study can help to prove the proposed mechanism of passivation.

The n-type Ge photodetectors with gold nanoparticles deposited to enhance the responsivity.

Gold nanoparticles (AuNPs) have been deposited on n-type Ge photodetectors to improve the responsivity. Two different coverage ratios, including 10.5 and 30.3% of AuNPs have been prepared, and the fabricated photodetectors are compared with the control sample. The 1,310-nm responsivities at -2 V of the control, 10.5% AuNPs, and 30.3% AuNPs samples are 465, 556, and 623 mA/W, respectively. The AuNPs could increase the responsivities due to the plasmon resonance. The reflectance spectra of these samples have been measured to verify that plasmon resonance contributes to the forward scattering of incident light. The reflectance decreases with AuNP deposition, and a denser coverage results in a smaller reflectance. The smaller reflectance indicates more light could penetrate into the Ge active layer, and it results in a larger responsivity.

Passivation ability of graphene oxide demonstrated by two-different-metal solar cells.

The study on graphene oxide (GO) grows rapidly in recent years. We find that graphene oxide could act as the passivation material in photovoltaic applications. Graphene oxide has been applied on Si two-different-metal solar cells. The suitable introduction of graphene oxide could result in obvious enhancement on the efficiency. The simple chemical process to deposit graphene oxide makes low thermal budget, large-area deposition, and fast production of surface passivation possible. The different procedures to incorporate graphene oxide in Si two-different-metal solar cells are compared, and 21% enhancement on the efficiency is possible with a suitable deposition method.

Surface Plasmon assisted Cu(x)O photocatalyst for pure water splitting.

In this paper, Cu(x)O photocatalyst on plasmonic nanoporous Au film is proposed to enhancing the H(2) evolution rate of pure water splitting. The nanoporous Au film can simultaneously provide surface-enhanced absorption and built-in potential. The reflection spectrum shows that the surface plasmon (SP) assisted absorption wavelength of the Cu(x)O on the nanoporous Au film can be modified by changing the annealing temperature. It is found that the enhancement of the H(2) evolution rate highly depends on the SP-assisted absorption. As the annealing temperature is 220 ° C, the H(2) evolution rate is 58 µmol hr(-1) under the condition that the device area is 0.25 cm(2).

Efficiency Improvement of HIT Solar Cells on p-Type Si Wafers.

Single crystal silicon solar cells are still predominant in the market due to the abundance of silicon on earth and their acceptable efficiency. Different solar-cell structures of single crystalline Si have been investigated to boost efficiency; the heterojunction with intrinsic thin layer (HIT) structure is currently the leading technology. The record efficiency values of state-of-the art HIT solar cells have always been based on n-type single-crystalline Si wafers. Improving the efficiency of cells based on p-type single-crystalline Si wafers could provide broader options for the development of HIT solar cells. In this study, we varied the thickness of intrinsic hydrogenated amorphous Si layer to improve the efficiency of HIT solar cells on p-type Si wafers.

Single Grain Boundary Modeling and Design of Microcrystalline Si Solar Cells.

For photovoltaic applications, microcrystalline silicon has a lot of advantages, such as the ability to absorb the near-infrared part of the solar spectrum. However, there are many dangling bonds at the grain boundary in microcrystalline Si. These dangling bonds would lead to the recombination of photo-generated carriers and decrease the conversion efficiency. Therefore, we included the grain boundary in the numerical study in order to simulate a microcrystalline Si solar cell accurately, designing new three-terminal microcrystalline Si solar cells. The 3-µm-thick three-terminal cell achieved a conversion efficiency of 10.8%, while the efficiency of a typical two-terminal cell is 9.7%. The three-terminal structure increased the JSC but decreased the VOC, and such phenomena are discussed. High-efficiency and low-cost Si-based thin film solar cells can now be designed based on the information provided in this paper.

Influence of graphene oxide on metal-insulator-semiconductor tunneling diodes.

In recent years, graphene studies have increased rapidly. Graphene oxide, which is an intermediate product to form graphene, is insulating, and it should be thermally reduced to be electrically conductive. We herein describe an attempt to make use of the insulating properties of graphene oxide. The graphene oxide layers are deposited onto Si substrates, and a metal-insulator-semiconductor tunneling structure is formed and its optoelectronic properties are studied. The accumulation dark current and inversion photocurrent of the graphene oxide device are superior to the control device. The introduction of graphene oxide improves the rectifying characteristic of the diode and enhances its responsivity as a photodetector. At 2 V, the photo-to-dark current ratio of the graphene oxide device is 24, larger than the value of 15 measured in the control device.

Effect of non-lattice oxygen on ZrO2-based resistive switching memory.

ZrO2-based resistive switching memory has attracted much attention according to its possible application in the next-generation nonvolatile memory. The Al/ZrO2/Pt resistive switching memory with bipolar resistive switching behavior is revealed in this work. The thickness of the ZrO2 film is only 20 nm. The device yield improved by the non-lattice oxygen existing in the ZrO2 film deposited at room temperature is firstly proposed. The stable resistive switching behavior and the long retention time with a large current ratio are also observed. Furthermore, it is demonstrated that the resistive switching mechanism agrees with the formation and rupture of a conductive filament in the ZrO2 film. In addition, the Al/ZrO2/Pt resistive switching memory is also possible for application in flexible electronic equipment because it can be fully fabricated at room temperature.

Direct growth of ultra-long platinum nanolawns on a semiconductor photocatalyst.

A template- and surfactant-free process, thermally assisted photoreduction, is developed to prepare vertically grown ultra-long Pt nanowires (NWs) (about 30-40 nm in diameter, 5-6 µm in length, and up to 80 NWs/100 µm2 in the wire density) on TiO2 coated substrates, including Si wafers and carbon fibers, with the assistance of the photocatalytic ability and semiconductor characteristics of TiO2. A remarkable aspect ratio of up to 200 can be achieved. TEM analytical results suggest that the Pt NWs are single-crystalline with a preferred 〈111〉 growth direction. The precursor adopted and the heat treatment conditions are crucial for the yield of NWs. The photoelectrons supplied by TiO2 gives rise to the formation of nano-sized Pt nuclei from salt melt or solution. The subsequent growth of NWs is supported by the thermal electrons which also generated from TiO2 during the post thermal treatment. The interactions between the ions and the electrons in the Pt/TiO2 junction are discussed in this study.

Metal-insulator-semiconductor photodetectors.

The major radiation of the sun can be roughly divided into three regions: ultraviolet, visible, and infrared light. Detection in these three regions is important to human beings. The metal-insulator-semiconductor photodetector, with a simpler process than the pn-junction photodetector and a lower dark current than the MSM photodetector, has been developed for light detection in these three regions. Ideal UV photodetectors with high UV-to-visible rejection ratio could be demonstrated with III-V metal-insulator-semiconductor UV photodetectors. The visible-light detection and near-infrared optical communications have been implemented with Si and Ge metal-insulator-semiconductor photodetectors. For mid- and long-wavelength infrared detection, metal-insulator-semiconductor SiGe/Si quantum dot infrared photodetectors have been developed, and the detection spectrum covers atmospheric transmission windows.