RESUMEN
The analog resistive switching properties of amorphous InGaZnOx (a-IGZO)-based devices with Al as the top and bottom electrodes and an Al-Ox interface layer inserted on the bottom electrode are presented here. The influence of the electrode deposition rate on the surface roughness was established and proposed as the cause of the observed unusual anomalous switching effects. The DC electrical characterization of the optimized Al/a-IGZO/AlOx/Al devices revealed an analog resistive switching with a satisfactory value for retention levels, but the endurance was found to decrease after 200 cycles. The predominant conduction mechanism in these devices was found to be thermionic emission. An in-depth analysis was performed to explore the relaxation kinetics of the device and it was found that the current has a lower decay rate. The current level stability was tested and found reliable even after 5 h. The cost-effective and precious metal-free nature of the a-IGZO memristor investigated in this study makes it a highly desirable candidate for neuromorphic computing applications.
RESUMEN
The oxygen vacancies and hydrogen in oxide semiconductors are regarded as the primary sources of charge carriers and various studies have investigated the effect of hydrogen on the properties of oxide semiconductors. However, the carrier generation mechanism between hydrogen and oxygen vacancies in an a-IGZO semiconductor has not yet been clearly examined. In this study we investigated the effect of hydrogen and the variation mechanisms of electrical properties of a thin film supplied with hydrogen from the passivation layer. SiOx and SiNx, which are used as passivation or gate insulator layers in the semiconductor process, respectively, were placed on the top or bottom of an a-IGZO semiconductor to determine the amount of hydrogen penetrating the a-IGZO active layer. The hydrogen diffusion depth was sufficiently deep to affect the entire thin semiconductor layer. A large amount of hydrogen in SiNx directly affects the electrical resistivity of a-IGZO semiconductor, whereas in SiOx, it induces a different behavior from that in SiNx, such as inducing an oxygen reaction and O-H bond behavior change at the interface of an a-IGZO semiconductor. Moreover, the change in electrical resistivity owing to the contribution of free electrons could be varied based on the bonding method of hydrogen and oxygen.
RESUMEN
Background: The purpose of this study was to compare the performance between noncontrast-enhanced computed tomography (NECT) plus abdominal ultrasound (US) (NECT + US) with contrast-enhanced computed tomography (CECT) for the detection of hepatic metastasis in breast cancer patient with postsurgical follow-up. Methods: A total of 1470 patients without already diagnosed hepatic metastasis were included. All patients underwent US and multiphase CECT including the NECT. Independent reviewers analyzed images obtained in four settings, namely, abdominal US, NECT, NECT + US, and CECT and recorded liver metastases using a 5-grade scale of diagnostic confidence. Sensitivity, specificity (diagnostic performance), and area under the receiver operating characteristic curve (AUC, diagnostic confidence) were calculated. Interoperator agreement was calculated using the kappa test. Results: Reference standards revealed no metastases in 1108/1470 patients, and metastasis was detected in 362/1470 patients. Abdominal US (P < 0.01) and NECT (P = 0.01) significantly differed from CECT, but NECT + US did not significantly differ from CECT in terms of sensitivity (P = 0.09), specificity (P = 0.5), and AUC (P = 0.43). After an additional review of abdominal US, readers changed the diagnostic confidence scores of 106 metastatic lesions diagnosed using NECT. Interobserver agreements were good or very good in all four settings. Additional review of abdominal US with NECT allowed a change in the therapeutic plan of 108 patients. Conclusion: Abdominal US + NECT showed better diagnostic performance for the detection of hepatic metastases than did NECT alone; its diagnostic performance and confidence were similar to those of CECT.
RESUMEN
The reduction in current ability accompanied by the hump phenomenon in oxide semiconductor thin-film transistors to which high DC voltages and AC drive voltages are applied has not been studied extensively, although it is a significant bottleneck in the manufacture of integrated circuits. Here, we report on the origin of the hump and current drop in reliability tests caused by the degradation in the oxide semiconductor during a circuit driving test. The hump phenomenon and current drop according to two different driving stresses were verified. Through a numerical computational simulation, we confirmed that this issue can be caused by an additional "needle", a shallow (~0.2 eV) and narrow (<0.1 eV), defect state near the conduction band minimum (CBM). This is also discussed in terms of the dual current path caused by leakage current in the channel edge.
RESUMEN
Although polymer-dispersed liquid crystal (PDLC) devices have considerable potential application in smart windows, the high material cost of the indium tin oxide (ITO) electrodes conventionally used in these devices hinders their wide usage. In this work, we explore the use of graphene electrodes as a potential substitute for ITO electrodes in PDLC devices. The fabricated PDLC devices with graphene electrodes exhibit higher contrast and faster response than PDLC devices with ITO electrodes fabricated using the same chemical formulation and polymerization process. However, they also exhibit higher operation voltage and haze, which is primarily attributed to the inherently large resistance and inhomogeneity of the large-area graphene sheets initially transferred onto the transparent substrates. PDLC devices with graphene electrodes are robust under standard operating conditions and also have the advantage of flexibility and stretchability, unlike PDLCs with ITO electrodes.
