The future of two-dimensional semiconductors beyond Moore's law.

The primary challenge facing silicon-based electronics, crucial for modern technological progress, is difficulty in dimensional scaling. This stems from a severe deterioration of transistor performance due to carrier scattering when silicon thickness is reduced below a few nanometres. Atomically thin two-dimensional (2D) semiconductors still maintain their electrical characteristics even at sub-nanometre scales and offer the potential for monolithic three-dimensional (3D) integration. Here we explore a strategic shift aimed at addressing the scaling bottleneck of silicon by adopting 2D semiconductors as new channel materials. Examining both academic and industrial viewpoints, we delve into the latest trends in channel materials, the integration of metal contacts and gate dielectrics, and offer insights into the emerging landscape of industrializing 2D semiconductor-based transistors for monolithic 3D integration.

Accuracy of Mandibular Removable Partial Denture Frameworks Fabricated by 3D Printing and Conventional Techniques.

Herein, we used digital superimposition to evaluate the accuracy of metal frameworks for mandibular removable partial dentures fabricated using three techniques. Thirty master casts of a mandibular dentiform were categorized into three groups (n = 10) based on the framework manufacturing method: selective laser melting-based metal three-dimensional (3D) printing (SLM), digital light projection-based resin 3D printing and subsequent casting (RPC), and conventional casting (CON). The master casts were scanned twice, initially after preparation and subsequently after attaching silicone using the frameworks. These scan files were digitally superimposed to measure the silicone thickness. Statistical analysis was conducted using SPSS Statistics (Version 23.0, IBM Corp., Somers, NY, USA). One-way ANOVA and a post hoc Tukey's multiple comparison tests were performed to determine differences among the three groups (α = 0.05). The RPC group exhibited significantly higher overall and mean internal discrepancies at rest and tissue stops than the SLM and CON groups, which exhibited statistically insignificant differences. Thus, SLM fabrication resulted in comparable accuracy to that achieved by CON, whereas sequentially performing resin 3D printing and casting induced inferior accuracy. However, all frameworks across the three groups were clinically acceptable.

Mixed-Dimensional Integration of 3D-on-2D Heterostructures for Advanced Electronics.

Two-dimensional (2D) materials have garnered significant attention due to their exceptional properties requisite for next-generation electronics, including ultrahigh carrier mobility, superior mechanical flexibility, and unusual optical characteristics. Despite their great potential, one of the major technical difficulties toward lab-to-fab transition exists in the seamless integration of 2D materials with classic material systems, typically composed of three-dimensional (3D) materials. Owing to the self-passivated nature of 2D surfaces, it is particularly challenging to achieve well-defined interfaces when forming 3D materials on 2D materials (3D-on-2D) heterostructures. Here, we comprehensively review recent progress in 3D-on-2D incorporation strategies, ranging from direct-growth- to layer-transfer-based approaches and from non-epitaxial to epitaxial integration methods. Their technological advances and obstacles are rigorously discussed to explore optimal, yet viable, integration strategies of 3D-on-2D heterostructures. We conclude with an outlook on mixed-dimensional integration processes, identifying key challenges in state-of-the-art technology and suggesting potential opportunities for future innovation.

Phase-change memory via a phase-changeable self-confined nano-filament.

Phase-change memory (PCM) has been considered a promising candidate for solving von Neumann bottlenecks owing to its low latency, non-volatile memory property and high integration density1,2. However, PCMs usually require a large current for the reset process by melting the phase-change material into an amorphous phase, which deteriorates the energy efficiency2-5. Various studies have been conducted to reduce the operation current by minimizing the device dimensions, but this increases the fabrication cost while the reduction of the reset current is limited6,7. Here we show a device for reducing the reset current of a PCM by forming a phase-changeable SiTex nano-filament. Without sacrificing the fabrication cost, the developed nano-filament PCM achieves an ultra-low reset current (approximately 10 µA), which is about one to two orders of magnitude smaller than that of highly scaled conventional PCMs. The device maintains favourable memory characteristics such as a large on/off ratio, fast speed, small variations and multilevel memory properties. Our finding is an important step towards developing novel computing paradigms for neuromorphic computing systems, edge processors, in-memory computing systems and even for conventional memory applications.

High energy density in artificial heterostructures through relaxation time modulation.

Electrostatic capacitors are foundational components of advanced electronics and high-power electrical systems owing to their ultrafast charging-discharging capability. Ferroelectric materials offer high maximum polarization, but high remnant polarization has hindered their effective deployment in energy storage applications. Previous methodologies have encountered problems because of the deteriorated crystallinity of the ferroelectric materials. We introduce an approach to control the relaxation time using two-dimensional (2D) materials while minimizing energy loss by using 2D/3D/2D heterostructures and preserving the crystallinity of ferroelectric 3D materials. Using this approach, we were able to achieve an energy density of 191.7 joules per cubic centimeter with an efficiency greater than 90%. This precise control over relaxation time holds promise for a wide array of applications and has the potential to accelerate the development of highly efficient energy storage systems.

Junctionless Negative-Differential-Resistance Device Using 2D Van-Der-Waals Layered Materials for Ternary Parallel Computing.

Negative-differential-resistance (NDR) devices offer a promising pathway for developing future computing technologies characterized by exceptionally low energy consumption, especially multivalued logic computing. Nevertheless, conventional approaches aimed at attaining the NDR phenomenon involve intricate junction configurations and/or external doping processes in the channel region, impeding the progress of NDR devices to the circuit and system levels. Here, an NDR device is presented that incorporates a channel without junctions. The NDR phenomenon is achieved by introducing a metal-insulator-semiconductor capacitor to a portion of the channel area. This approach establishes partial potential barrier and well that effectively restrict the movement of hole and electron carriers within specific voltage ranges. Consequently, this facilitates the implementation of both a ternary inverter and a ternary static-random-access-memory, which are essential components in the development of multivalued logic computing technology.

Remote Epitaxy: Fundamentals, Challenges, and Opportunities.

Advanced heterogeneous integration technologies are pivotal for next-generation electronics. Single-crystalline materials are one of the key building blocks for heterogeneous integration, although it is challenging to produce and integrate these materials. Remote epitaxy is recently introduced as a solution for growing single-crystalline thin films that can be exfoliated from host wafers and then transferred onto foreign platforms. This technology has quickly gained attention, as it can be applied to a wide variety of materials and can realize new functionalities and novel application platforms. Nevertheless, remote epitaxy is a delicate process, and thus, successful execution of remote epitaxy is often challenging. Here, we elucidate the mechanisms of remote epitaxy, summarize recent breakthroughs, and discuss the challenges and solutions in the remote epitaxy of various material systems. We also provide a vision for the future of remote epitaxy for studying fundamental materials science, as well as for functional applications.

Ultrahigh Photoresponsivity of W/Graphene/ß-Ga2O3 Schottky Barrier Deep Ultraviolet Photodiodes.

The integration of graphene with semiconductor materials has been studied for developing advanced electronic and optoelectronic devices. Here, we propose ultrahigh photoresponsivity of ß-Ga2O3 photodiodes with a graphene monolayer inserted in a W Schottky contact. After inserting the graphene monolayer, we found a reduction in the leakage current and ideality factor. The Schottky barrier height was also shown to be about 0.53 eV, which is close to an ideal value. This was attributed to a decrease in the interfacial state density and the strong suppression of metal Fermi-level pinning. Based on a W/graphene/ß-Ga2O3 structure, the responsivity and external quantum efficiency reached 14.49 A/W and 7044%, respectively. These values were over 100 times greater than those of the W contact alone. The rise and delay times of the W/graphene/ß-Ga2O3 Schottky barrier photodiodes significantly decreased to 139 and 200 ms, respectively, compared to those obtained without a graphene interlayer (2000 and 3000 ms). In addition, the W/graphene/ß-Ga2O3 Schottky barrier photodiode was highly stable, even at 150 °C.

Nucleation and Growth of GaAs on a Carbon Release Layer by Halide Vapor Phase Epitaxy.

We couple halide vapor phase epitaxy (HVPE) growth of III-V materials with liftoff from an ultrathin carbon release layer to address two significant cost components in III-V device - epitaxial growth and substrate reusability. We investigate nucleation and growth of GaAs layers by HVPE on a thin amorphous carbon layer that can be mechanically exfoliated, leaving the substrate available for reuse. We study nucleation as a function of carbon layer thickness and growth rate and find island-like nucleation. We then study various GaAs growth conditions, including V/III ratio, growth temperature, and growth rate in an effort to minimize film roughness. High growth rates and thicker films lead to drastically smoother surfaces with reduced threading dislocation density. Finally, we grow an initial photovoltaic device on a carbon release layer that has an efficiency of 7.2%. The findings of this work show that HVPE growth is compatible with a carbon release layer and presents a path toward lowering the cost of photovoltaics with high throughput growth and substrate reuse.

Comparison of the accuracy of a cone beam computed tomography-based virtual mounting technique with that of the conventional mounting technique using a facebow.

STATEMENT OF PROBLEM: The introduction of digital technology in dentistry has resulted in a shift from conventional methods to digital techniques. However, mounting a digitized dental cast on a virtual articulator is challenging. Several techniques have been suggested to resolve this problem, but in the absence of a standardized method, digitized dental casts are often mounted arbitrarily on a virtual articulator. PURPOSE: The purpose of this clinical study was to compare the accuracy of a novel virtual facebow transfer (VM) technique based on cone beam computed tomography (CBCT) with that of the conventional mounting (CM) technique using a facebow. MATERIAL AND METHODS: Five repeated mountings were performed with each technique for 15 participants. In the CM group, dental casts were mounted using a facebow record and scanned for transmission to the virtual dental space. In the VM group, digital dental casts were mounted on the standard tessellation language file of a reference articulator by reconstructing a file of the participant's skull from CBCT data. In this group, a virtual facebow, prepared by scanning the articulator and facebow complex, was used. After the CM and VM casts had been aligned, the coordinates of target points set on the maxillary right central incisor, maxillary right first molar, and maxillary left first molar were determined, and the mean ±standard deviation distance between the target points was calculated to compare the precision of the techniques. Additionally, vectors of the target point on the maxillary right central incisor were compared to analyze the spatial difference between the techniques. Finally, the occlusal plane angle was calculated. For the correlation analysis of repeated measured data, a 1-way repeated measures analysis of variance (ANOVA) was first performed. The Kolmogorov-Smirnov test was performed to determine normality, and a paired t test and the Wilcoxon signed rank test were performed for normally and nonnormally distributed variables, respectively (α=.05). RESULTS: The mean distance between target points was significantly greater in the CM group (4.72 ±1.45 to 5.17 ±1.54 mm) than in the VM group (2.14 ±0.58 to 2.35 ±0.60 mm) (P<.05). The standard deviation between target points was significantly greater in the CM group (1.60 ±0.64 to 2.30 ±0.87 mm) than in the VM group (0.74 ±0.23 to 1.12 ±0.45 mm) (P<.05). The maxillary right central incisor was located more anteriorly in the VM group than in the CM (100%, P<.05) group. The occlusal plane angle was significantly steeper in the CM group than in the VM group (8.14 degrees versus 2.13 degrees, P<.05). CONCLUSIONS: The VM technique was more precise than the CM technique. VM casts were positioned ahead of CM casts. Further, the occlusal plane angle tended to be steeper with the CM technique than with the VM technique.

Monolithic 3D integration of 2D materials-based electronics towards ultimate edge computing solutions.

Three-dimensional (3D) hetero-integration technology is poised to revolutionize the field of electronics by stacking functional layers vertically, thereby creating novel 3D circuity architectures with high integration density and unparalleled multifunctionality. However, the conventional 3D integration technique involves complex wafer processing and intricate interlayer wiring. Here we demonstrate monolithic 3D integration of two-dimensional, material-based artificial intelligence (AI)-processing hardware with ultimate integrability and multifunctionality. A total of six layers of transistor and memristor arrays were vertically integrated into a 3D nanosystem to perform AI tasks, by peeling and stacking of AI processing layers made from bottom-up synthesized two-dimensional materials. This fully monolithic-3D-integrated AI system substantially reduces processing time, voltage drops, latency and footprint due to its densely packed AI processing layers with dense interlayer connectivity. The successful demonstration of this monolithic-3D-integrated AI system will not only provide a material-level solution for hetero-integration of electronics, but also pave the way for unprecedented multifunctional computing hardware with ultimate parallelism.

Remote epitaxial interaction through graphene.

The concept of remote epitaxy involves a two-dimensional van der Waals layer covering the substrate surface, which still enable adatoms to follow the atomic motif of the underlying substrate. The mode of growth must be carefully defined as defects, e.g., pinholes, in two-dimensional materials can allow direct epitaxy from the substrate, which, in combination with lateral epitaxial overgrowth, could also form an epilayer. Here, we show several unique cases that can only be observed for remote epitaxy, distinguishable from other two-dimensional material-based epitaxy mechanisms. We first grow BaTiO3 on patterned graphene to establish a condition for minimizing epitaxial lateral overgrowth. By observing entire nanometer-scale nuclei grown aligned to the substrate on pinhole-free graphene confirmed by high-resolution scanning transmission electron microscopy, we visually confirm that remote epitaxy is operative at the atomic scale. Macroscopically, we also show variations in the density of GaN microcrystal arrays that depend on the ionicity of substrates and the number of graphene layers.

Exceptional Thermochemical Stability of Graphene on N-Polar GaN for Remote Epitaxy.

In this study, we investigate the thermochemical stability of graphene on the GaN substrate for metal-organic chemical vapor deposition (MOCVD)-based remote epitaxy. Despite excellent physical properties of GaN, making it a compelling choice for high-performance electronic and light-emitting device applications, the challenge of thermochemical decomposition of graphene on a GaN substrate at high temperatures has obstructed the achievement of remote homoepitaxy via MOCVD. Our research uncovers an unexpected stability of graphene on N-polar GaN, thereby enabling the MOCVD-based remote homoepitaxy of N-polar GaN. Our comparative analysis of N- and Ga-polar GaN substrates reveals markedly different outcomes: while a graphene/N-polar GaN substrate produces releasable microcrystals (µCs), a graphene/Ga-polar GaN substrate yields nonreleasable thin films. We attribute this discrepancy to the polarity-dependent thermochemical stability of graphene on the GaN substrate and its subsequent reaction with hydrogen. Evidence obtained from Raman spectroscopy, electron microscopic analyses, and overlayer delamination points to a pronounced thermochemical stability of graphene on N-polar GaN during MOCVD-based remote homoepitaxy. Molecular dynamics simulations, corroborated by experimental data, further substantiate that the thermochemical stability of graphene is reliant on the polarity of GaN, due to different reactions with hydrogen at high temperatures. Based on the N-polar remote homoepitaxy of µCs, the practical application of our findings was demonstrated in fabrication of flexible light-emitting diodes composed of p-n junction µCs with InGaN heterostructures.

Recent Advances and Future Prospects for Memristive Materials, Devices, and Systems.

Memristive technology has been rapidly emerging as a potential alternative to traditional CMOS technology, which is facing fundamental limitations in its development. Since oxide-based resistive switches were demonstrated as memristors in 2008, memristive devices have garnered significant attention due to their biomimetic memory properties, which promise to significantly improve power consumption in computing applications. Here, we provide a comprehensive overview of recent advances in memristive technology, including memristive devices, theory, algorithms, architectures, and systems. In addition, we discuss research directions for various applications of memristive technology including hardware accelerators for artificial intelligence, in-sensor computing, and probabilistic computing. Finally, we provide a forward-looking perspective on the future of memristive technology, outlining the challenges and opportunities for further research and innovation in this field. By providing an up-to-date overview of the state-of-the-art in memristive technology, this review aims to inform and inspire further research in this field.

Stability of Graphene and Influence of AlN Surface Pits on GaN Remote Heteroepitaxy for Exfoliation.

Remote epitaxy is a promising technology that has recently attracted considerable attention, which enables the growth of thin films that copy the crystallographic characteristics of the substrate through two-dimensional material interlayers. The grown films can be exfoliated to form freestanding membranes, although it is often challenging to apply this technique if the substrate materials are prone to damage under harsh epitaxy conditions. For example, remote epitaxy of GaN thin films on graphene/GaN templates has not been achieved by a standard metal-organic chemical vapor deposition (MOCVD) method due to such damages. Here, we report GaN remote heteroepitaxy on graphene/AlN templates by MOCVD and investigate the influence of surface pits in AlN on the growth and exfoliation of GaN thin films. We first show the thermal stability of graphene before GaN growth, based on which two-step growth of GaN on graphene/AlN is developed. The GaN samples are successfully exfoliated after the first step of the growth at 750 °C, whereas the exfoliation failed after the second step at 1050 °C. In-depth analysis confirms that the pits in AlN templates lead to the degradation of graphene near the area and thus the alteration of growth modes and the failure of exfoliation. These results exemplify the importance of chemical and topographic properties of growth templates for successful remote epitaxy. It is one of the key factors for III-nitride-based remote epitaxy, and these results are expected to be of great help in realizing complete remote epitaxy using only MOCVD.

Effect of cement space settings on the marginal and internal fit of 3D-printed definitive resin crowns.

STATEMENT OF PROBLEM: The cement gap setting affects the marginal and internal fits depending on the crown material and manufacturing method (subtractive or additive manufacturing). However, information on the effects of cement space settings in the computer-aided design (CAD) software program, which is used to aid the manufacturing with 3-dimensional (3D) printing-type resin material, is lacking, and recommendations for optimal marginal and internal fit are needed. PURPOSE: The purpose of this in vitro study was to evaluate how cement gap settings affect the marginal and internal fit of a 3D-printed definitive resin crown. MATERIAL AND METHODS: After scanning a prepared typodont left maxillary first molar, a crown was designed with cement spaces of 35, 50, 70, and 100 µm by using a CAD software program. A total of 14 specimens per group were 3D printed from definitive 3D-printing resin. By using the replica technique, the intaglio surface of the crown was duplicated, and the duplicated specimen was sectioned in the buccolingual and mesiodistal directions. Statistical analyses were performed using the Kruskal-Wallis and the Mann-Whitney post hoc tests (α=.05). RESULTS: Although the median values of the marginal gaps were within the clinically acceptable limit (<120 µm) for all the groups, the smallest marginal gaps were obtained with the 70-µm setting. For the axial gaps, there was no observed difference in the 35-, 50-, and 70-µm groups, and the 100-µm group showed the largest gap. The smallest axio-occlusal and occlusal gaps were obtained with the 70-µm setting. CONCLUSIONS: Based on the findings of this in vitro study, a 70-µm cement gap setting is recommended for optimal marginal and internal fit of 3D-printed resin crowns.

Effect of airborne particle abrasion treatment of two types of 3D-printing resin materials for permanent restoration materials on flexural strength.

OBJECTIVES: This study aimed to assess the effects of airborne-particle abrasion (APA) on the flexural strength of two types of 3D-printing resins for permanent restoration. METHODS: Two types of 3D printing resins (urethane dimethacrylate oligomer; UDMA, ethoxylated bisphenol-A dimethacrylate; BEMA) constituting different components were printed. The specimen surfaces were subjected to APA using 50 and 110 µm alumina particles under different pressures. The three-point flexural strength was measured for each surface treatment group, and a Weibull analysis was performed. Surface characteristics were analyzed via surface roughness measurements and scanning electron microscopy. Dynamic mechanical analysis and nano-indentation measurements were limited to the control group. RESULTS: The three-point flexural strength according to the surface treatment was significantly lower in the UDMA group for large particle sizes and at high pressures; the BEMA group demonstrated low flexural strength for large particle sizes regardless of the pressure. After thermocycling, the flexural strengths of UDMA and BEMA significantly decreased in the group subjected to surface treatment. The Weibull modulus and characteristic strength of UDMA were higher than those of BEMA under different APA and thermocycling conditions. As the abrasion pressure and particle size increased, a porous surface formed, and the surface roughness increased. Compared with BEMA, UDMA featured a lower strain, greater strain recovery, and a negligible increase in modulus according to strain. SIGNIFICANCE: Thus, surface roughness increased with the sandblasting particle size and pressure of the 3D-printing resin. Hence, a suitable surface treatment method to improve adhesion can be determined by considering physical property changes.

A comprehensive study on the mechanical effects of implant-supported prostheses under multi-directional loading and different occlusal contact points.

AIMS: To evaluate screw loosening and fracture load and angular deviation of a single implant-supported prosthesis under multi-directional loading condition at three different occlusal contact points. METHODS: A total of 40 metal crowns were cemented to external connection implants and were embedded vertically and obliquely. The occlusal surface of the crown was designed with three flat surfaces, contact a, b, and c, representing outer and inner 20-degree inclination for buccal and lingual cusps. The angular deviations of implant crown under static 50N of loading were measured. And screw removal torque was evaluated before and after 57,600 load cycles. Then, fracture load was measured for each specimen. Data analysis was performed using one-way analysis of variance test of significance followed by Tukey honest significant difference (HSD) test(p < 0.05). RESULTS: Angular deviation results showed statistical significance between all contact points in vertically embedded group compared to obliquely embedded group, which showed similar results between contact A and B compared to C. In the other hand, screw loosening evaluation did not show statistical significance among the tested groups. And for the fracture load evaluation the maximum values reached twice the yield values in all contact areas. CONCLUSIONS: Mechanical effects were different regarding to diverse loading direction and contact points. The results of this study suggest that the stress concentration might increase in unfavorable vector direction.

Fabrication of color-graded feldspathic dental prosthetics for aesthetic and restorative dentistry.

OBJECTIVE: Feasibility investigation of natural teeth shades replication on dental prosthetics fabricated via functionally graded additive manufacturing (FGAM) using combination of feldspathic porcelain (FP) and yttrium aluminum garnet cerium (Y3Al5O12:Ce, YAG:Ce) as a promising esthetic restoration option. METHODS: Color-graded feldspathic crown fabrication parameter through FGAM method was comprehensively examined from the slurry rheology, cure depth, debinding to sintering temperature. Effect of light absorbent also checked towards overcuring reaction during UV exposure by the shape comparison. Lastly, the flexural bending strength measured following ISO 6872:2015 to assure the applicability. Applying the studied parameter, natural teeth shades then imitated and investigated by alteration of FP and FP + 0.1 wt% YAG:Ce (Y-FP). Generated color across the structure captured through mobile camera, interpreted through the CIELAB coordinate and the gradation confirmed by the color differences (ΔE00) calculated using CIEDE2000 formula. RESULT: Parameter study indicated that 70 wt% of FP slurry with 3 wt% dispersant and 0.2 wt% light absorbent is favored. It produces excellent flowability in our FGAM system with less overcuring justified by edge margin reduction from 95.65° to 90.00° after UV exposure on rectangle shapes masking. The obtain structure also offers adequate flexural bending strength of 106.26 MPa (FP) and 101.36 MPa (Y-FP) after sintering at 780 °C. This validated the materials as class 2 dental prosthetics citing ISO 6872:2015. Color gradation was verified by the yellow b* value reduction (14.8 to -3.33) as it shifted from cervical to incisal area while ΔE00 further affirmed the differences from each segment in comparison with the FP and Y-FP. SIGNIFICANCE: Color gradation was successfully replicated by FP and YAG:Ce composition shift via FGAM technique. This result highlights the potential of FGAM as an alternative for fabricating dental prosthetics with high efficiency and improved esthetic appeal.

High-throughput manufacturing of epitaxial membranes from a single wafer by 2D materials-based layer transfer process.

Layer transfer techniques have been extensively explored for semiconductor device fabrication as a path to reduce costs and to form heterogeneously integrated devices. These techniques entail isolating epitaxial layers from an expensive donor wafer to form freestanding membranes. However, current layer transfer processes are still low-throughput and too expensive to be commercially suitable. Here we report a high-throughput layer transfer technique that can produce multiple compound semiconductor membranes from a single wafer. We directly grow two-dimensional (2D) materials on III-N and III-V substrates using epitaxy tools, which enables a scheme comprised of multiple alternating layers of 2D materials and epilayers that can be formed by a single growth run. Each epilayer in the multistack structure is then harvested by layer-by-layer mechanical exfoliation, producing multiple freestanding membranes from a single wafer without involving time-consuming processes such as sacrificial layer etching or wafer polishing. Moreover, atomic-precision exfoliation at the 2D interface allows for the recycling of the wafers for subsequent membrane production, with the potential for greatly reducing the manufacturing cost.