Orientation of reduced graphene oxide in composite coatings.

Composite coatings containing reduced graphene oxide (rGO) and 3-(aminopropyl)triethoxysilane functionalised rGO (APTES-rGO) were prepared by sol-gel technology and deposited on Al 2024 T-3. Covalent functionalisation of GO by APTES occurred by formation of amide bonds, accompanied by GO reduction. The thin sheets were retained. The hydrophilicity of the coating increased when APTES-rGO was added. The opposite was observed when GO was added. A key finding is that the rGO flakes agglomerate and lie in a random orientation in the coating, whereas the APTES-rGO flakes are more evenly distributed in the matrix and appear to lie along the plane of the substrate.

Gas Sensing Properties of PLD Grown 2D SnS Film: Effect of Film Thickness, Metal Nanoparticle Decoration, and In Situ KPFM Investigation.

This study employs novel growth methodologies and surface sensitization with metal nanoparticles to enhance and manipulate gas sensing behavior of two-dimensional (2D)SnS film. Growth of SnS films is optimized by varying substrate temperature and laser pulses during pulsed laser deposition (PLD). Thereafter, palladium (Pd), gold (Au), and silver (Ag) nanoparticles are decorated on as-grown film using gas-phase synthesis techniques. X-ray diffraction (XRD), Raman spectroscopy, and Field-emission scanning electron microscopy (FESEM) elucidate the growth evolution of SnS and the effect of nanoparticle decoration. X-ray photoelectron spectroscopy (XPS) analyses the chemical state and composition. Pristine SnS, Ag, and Au decorated SnS films are sensitive and selective toward NO2 at room temperature (RT). Ag nanoparticle increases the response of pristine SnS from 48 to 138% toward 2 ppm NO2, which indicates electronic and chemical sensitization effect of Ag. Pd decoration on SnS tunes its selectivity toward H2 gas with a response of 55% toward 70 ppm H2 and limit of detection (LOD) < 1 ppm. In situ Kelvin probe force microscopy (KPFM) maps the work function changes, revealing catalytic effect of Ag toward NO2 in Ag-decorated SnS and direct charge transfer between Pd and SnS during H2 exposure in Pd-decorated SnS.

Phonon-Mediated Quasiparticle Lifetime Renormalizations in Few-Layer Hexagonal Boron Nitride.

Understanding the collective behavior of the quasiparticles in solid-state systems underpins the field of nonvolatile electronics, including the opportunity to control many-body effects for well-desired physical phenomena and their applications. Hexagonal boron nitride (hBN) is a wide-energy-bandgap semiconductor, showing immense potential as a platform for low-dimensional device heterostructures. It is an inert dielectric used for gated devices, having a negligible orbital hybridization when placed in contact with other systems. Despite its inertness, we discover a large electron mass enhancement in few-layer hBN affecting the lifetime of the π-band states. We show that the renormalization is phonon-mediated and consistent with both single- and multiple-phonon scattering events. Our findings thus unveil a so-far unknown many-body state in a wide-bandgap insulator, having important implications for devices using hBN as one of their building blocks.

Plasmonic properties of aluminium nanowires in amorphous silicon.

Plasmonic structures can help enhance optical activity in the ultraviolet (UV) region and therefore enhancing photocatalytic reactions and the detection of organic and biological species. Most plasmonic structures are composed of Ag or Au. However, producing structures small enough for optical activity in the UV region has proved difficult. In this study, we demonstrate that aluminium nanowires are an excellent alternative. We investigated the plasmonic properties of the Al nanowires as well as the optoelectronic properties of the surroundinga - Simatrix by combining scanning transmission electron microscopy imaging, electron energy loss spectroscopy and electrodynamic modelling. We have found that the Al nanowires have distinct plasmonic modes in the UV and far UV region, from 0.75 eV to 13 eV. In addition, simulated results found that the size and spacing of the Al nanowires, as well as the embedding material were shown to have a large impact on the type of surface plasmon energies that can be generated in the material. Using electromagnetic modelling, we have identified the modes and illustrated how they could be tuned further.

Tailoring the Vertical and Planar Growth of 2D WS2 Thin Films Using Pulsed Laser Deposition for Enhanced Gas Sensing Properties.

In this study, pulsed laser deposition has been utilized for the controllable synthesis of WS2 thin films with growth orientation ranging from vertically to horizontally aligned layers, and the effect of growth parameters has been investigated. The growth of thin films on SiO2 substrates at three different pressures (30, 50, and 70 mTorr) and three different temperatures (400, 500, and 600 °C) has been studied. Detailed characterizations carried out on the as-grown layers clearly show the formation of the 2H-WS2 phase and its morphological evolution with deposition conditions. Atomic force microscopy and cross-sectional transmission electron microscopy have been used to deduce the growth mechanism of the vertical and planar films with different deposition parameters. The samples grown with a combination of lower temperatures and higher pressures exhibit a vertical flake-like growth with a flake thickness of ∼2-5 nm. However, at higher temperatures and lower pressures, the film growth is observed to be rather planar. The gas sensing parameters and the underlying mechanism have been observed to be quite different for vertically and horizontally grown layers. The vertical layers showed a selective response toward NO2 gas at room temperature (RT) with a limit of detection less than 50 ppb. In comparison, a very subdued and poor gas sensing response was recorded for the planar film at RT. A large specific area and abundance of active edge sites along with the flat basal plane present in the vertically grown layers seem to be responsible for efficient gas sensing toward NO2.

Vertical field-effect transistor based on graphene-WS2 heterostructures for flexible and transparent electronics.

The celebrated electronic properties of graphene have opened the way for materials just one atom thick to be used in the post-silicon electronic era. An important milestone was the creation of heterostructures based on graphene and other two-dimensional crystals, which can be assembled into three-dimensional stacks with atomic layer precision. Such layered structures have already demonstrated a range of fascinating physical phenomena, and have also been used in demonstrating a prototype field-effect tunnelling transistor, which is regarded to be a candidate for post-CMOS (complementary metal-oxide semiconductor) technology. The range of possible materials that could be incorporated into such stacks is very large. Indeed, there are many other materials with layers linked by weak van der Waals forces that can be exfoliated and combined together to create novel highly tailored heterostructures. Here, we describe a new generation of field-effect vertical tunnelling transistors where two-dimensional tungsten disulphide serves as an atomically thin barrier between two layers of either mechanically exfoliated or chemical vapour deposition-grown graphene. The combination of tunnelling (under the barrier) and thermionic (over the barrier) transport allows for unprecedented current modulation exceeding 1 × 10(6) at room temperature and very high ON current. These devices can also operate on transparent and flexible substrates.

Electron tunneling through ultrathin boron nitride crystalline barriers.

We investigate the electronic properties of ultrathin hexagonal boron nitride (h-BN) crystalline layers with different conducting materials (graphite, graphene, and gold) on either side of the barrier layer. The tunnel current depends exponentially on the number of h-BN atomic layers, down to a monolayer thickness. Conductive atomic force microscopy scans across h-BN terraces of different thickness reveal a high level of uniformity in the tunnel current. Our results demonstrate that atomically thin h-BN acts as a defect-free dielectric with a high breakdown field. It offers great potential for applications in tunnel devices and in field-effect transistors with a high carrier density in the conducting channel.