Conformal High-Aspect-Ratio Solid Electrolyte Thin Films for Li-Ion Batteries by Atomic Layer Deposition.

Lithium phosphorus oxynitride (LiPON) is a state-of-the-art solid electrolyte material for thin-film microbatteries. These applications require conformal thin films on challenging 3D surface structures, and among the advanced thin-film deposition techniques, atomic layer deposition (ALD) is believed to stand out in terms of producing appreciably conformal thin films. Here we quantify the conformality (i.e., the evenness of deposition) of thin ALD-grown LiPON films using lateral high-aspect-ratio test structures. Two different lithium precursors, lithium tert-butoxide (LiOtBu) and lithium bis(trimethylsilyl)amide (Li-HMDS), were investigated in combination with diethyl phosphoramidate as the source of oxygen, phosphorus, and nitrogen. The results indicate that the film growth proceeded significantly deeper into the 3D cavities for the films grown from LiOtBu, while the Li-HMDS-based films grew more evenly initially, right after the cavity entrances. These observations can be explained by differences in the precursor diffusion and reactivity. The results open possibilities for the use of LiPON as a solid electrolyte in batteries with high-surface-area electrodes. This could enable faster charging and discharging as well as the use of thin-film technology in fabricating thin-film electrodes of meaningful charge capacity.

Centrosymmetric to non-centrosymmetric transition in the Ca2-xMnxTi2O6 double perovskite system studied through structural analysis and dielectric properties.

We have used high-pressure synthesis to synthesize samples of Ca2-xMnxTi2O6 double perovskite, where x varies between 0.2 and 1. The synthesized materials were structurally characterized with powder X-ray diffraction (XRD). Rietveld refinement of the XRD patterns was used to study the change from CaTiO3 (x = 0) to the composition CaMnTi2O6 (x = 1) where half of the Ca(II) ions are replaced by smaller Mn(II) ions. We analyzed the peak shapes in the XRD patterns, as well as lattice parameters, and it appears that smooth symmetry change from the centrosymmetric space group Pbnm to the non-centrosymmetric space group P42mc occurs between x = 0.3 and x = 0.5. We also confirmed the centrosymmetric to non-centrosymmetric transition by characterizing the dielectric properties of the materials with ferroelectric measurements.

Structure, Spin Correlations, and Magnetism of the S = 1/2 Square-Lattice Antiferromagnet Sr2CuTe1-xWxO6 (0 ≤ x ≤ 1).

Quantum spin liquids are highly entangled magnetic states with exotic properties. The S = 1/2 square-lattice Heisenberg model is one of the foundational models in frustrated magnetism with a predicted, but never observed, quantum spin liquid state. Isostructural double perovskites Sr2CuTeO6 and Sr2CuWO6 are physical realizations of this model but have distinctly different types of magnetic order and interactions due to a d10/d0 effect. Long-range magnetic order is suppressed in the solid solution Sr2CuTe1-xWxO6 in a wide region of x = 0.05-0.6, where the ground state has been proposed to be a disorder-induced spin liquid. Here, we present a comprehensive neutron scattering study of this system. We show using polarized neutron scattering that the spin liquid-like x = 0.2 and x = 0.5 samples have distinctly different local spin correlations, which suggests that they have different ground states. Low-temperature neutron diffraction measurements of the magnetically ordered W-rich samples reveal magnetic phase separation, which suggests that the previously ignored interlayer coupling between the square planes plays a role in the suppression of magnetic order at x ≈ 0.6. These results highlight the complex magnetism of Sr2CuTe1-xWxO6 and hint at a new quantum critical point between 0.2 < x < 0.4.

Atomic/molecular layer deposition of europium-organic thin films on nanoplasmonic structures towards FRET-based applications.

We present a novel atomic/molecular layer deposition (ALD/MLD) process for europium-organic thin films based on Eu(thd)3 and 2-hydroxyquinoline-4-carboxylic acid (HQA) precursors. The process yields with appreciably high growth rate luminescent Eu-HQA thin films in which the organic HQA component acts as a sensitizer for the red Eu3+ luminescence, extending the excitation wavelength range up to ca. 400 nm. We moreover deposit these films on nanoplasmonic structures to achieve a twentyfold enhanced emission intensity. Finally, we demonstrate the FRET-type energy transfer process for our Eu-HQA coated nanoplasmonic structures in combination with commercial Alexa647 fluorophor, underlining their potential towards novel bioimaging applications.

Excitation Wavelength Engineering through Organic Linker Choice in Luminescent Atomic/Molecular Layer Deposited Lanthanide-Organic Thin Films.

We demonstrate multiple roles for the organic linker in luminescent lanthanide-organic thin films grown with the strongly emerging atomic/molecular layer deposition technique. Besides rendering the hybrid thin film mechanically flexible and keeping the lanthanide nodes at a distance adequate to avoid concentration quenching, the organic moieties can act as efficient sensitizers for the lanthanide luminescence. We investigate six different aromatic organic precursors in combination with Eu3+ ions to reveal that by introducing different nitrogen species within the aromatic ring, it is possible to extend the excitation wavelength area from the UV range to the visible range. This opens new horizons for the application space of these efficiently photoluminescent thin-film materials.

Nanoporous Metal-Organic Framework Thin Films Prepared Directly from Gaseous Precursors by Atomic and Molecular Layer Deposition: Implications for Microelectronics.

Atomic/molecular layer deposition (ALD/MLD) allows for the direct gas-phase synthesis of crystalline metal-organic framework (MOF) thin films. Here, we show for the first time using krypton and methanol physisorption measurements that ALD/MLD-fabricated copper 1,4-benzenedicarboxylate (Cu-BDC) ultrathin films possess accessible porosity matching that of the corresponding bulk MOF.

Nonclassical Crystallization and Core-Shell Structure Formation of Ibuprofen from Binary Solvent Solutions.

Liquid-liquidphase separation (LLPS) or dense liquid intermediates during the crystallization of pharmaceutical molecules is common; however, their role in alternative nucleation mechanisms is less understood. Herein, we report the formation of a dense liquid intermediate followed by a core-shell structure of ibuprofen crystals via nonclassical crystallization. The Raman and SAXS results of the dense phase uncover the molecular structural ordering and its role in nucleation. In addition to the dimer formation of ibuprofen, which is commonly observed in the solution phase, methyl group vibrations in the Raman spectra show intermolecular interactions similar to those in the solid phase. The SAXS data validate the cluster size differences in the supersaturated solution and dense phase. The focused-ion beam cut image shows the attachment of nanoparticles, and we proposed a possible mechanism for the transformation from the dense phase into a core-shell structure. The unstable phase or polycrystalline core and its subsequent dissolution from inside to outside or recrystallization by reversed crystal growth produces the core-shell structure. The LLPS intermediate followed by the core-shell structure and its dissolution enhancement unfold a new perspective of ibuprofen crystallization.

SnO deposition via water based ALD employing tin(II) formamidinate: precursor characterization and process development.

Tin monoxide (SnO) is a promising oxide semiconductor which is appealing for a wide range of applications from channel materials in p-type field effect transistors (FET) to electrode materials searched for next-generation batteries. For the controlled growth of SnO films at low temperatures, atomic layer deposition (ALD) is employed in this study, where the choice of the precursor plays a significant role. A comparative thermal evaluation of four different amidinate-based tin(II) precursors and the influence of the ligand sphere on their physicochemical properties revealed that bis(N,N'-diisopropylformamidinato tin(II) (1) possesses the required volatility, good thermal stability and sufficient reactivity towards water, to be implemented as the ALD precursor. The water-assisted ALD process resulted in crystalline SnO films on Si substrates with a growth per cycle (GPC) of 0.82 Å at temperatures as low as 140 °C. By employing complementary analytical tools, namely, X-ray diffraction (XRD), atomic force microscopy (AFM), X-ray reflectivity (XRR), Rutherford backscattering spectrometry/nuclear reaction analysis (RBS/NRA) and X-ray photoelectron spectroscopy (XPS), the formation of tin monoxide was confirmed. Finally, the optical properties of the as-deposited films were analyzed via UV-Vis spectroscopy, exhibiting a band gap of 2.74 eV, which further confirms the formation of the targeted SnO phase.

Low-temperature ALD/MLD growth of alucone and zincone thin films from non-pyrophoric precursors.

The combined atomic/molecular layer deposition (ALD/MLD) technique is emerging as a state-of-the-art synthesis route for new metal-organic thin-film materials with a multitude of properties by combining those of the inorganic and the organic material. A major part of the studies so far reported have focused on aluminum or zinc alkyls, so-called alucone and zincone films, typically grown from trimethyl aluminum (TMA) or diethyl zinc (DEZ) as the metal-bearing precursor, and a simple aliphatic bi-functional alcohol molecule such as ethylene glycol (EG) as the organic precursor. However, these common precursors possess certain disadvantages: both TMA and DEZ are pyrophoric, DEZ being additionally thermally unstable, while EG has a strong tendency for various unideal reaction modes. Here we report novel ALD/MLD processes for alucone and zincone films based on non-pyrophoric bis-diisopropylamido-[3-(N,N-dimethylamino)propyl] aluminum(III) [Al(NiPr2)2(DMP)] and bis-3-(N,N-dimethylamino)propyl zinc(II) [Zn(DMP)2] precursors in combination with hydroquinone (HQ) as the organic precursor. We demonstrate that the [Al(NiPr2)2(DMP)] + HQ and [Zn(DMP)2] + HQ ALD/MLD processes work even at record low deposition temperatures (140 °C and 60 °C, respectively) yielding high-quality and relatively stable Al-HQ and Zn-HQ thin films with appreciably high growth rates (2.8 Å / cycle and 3.2 Å / cycle, respectively). Moreover, these ALD/MLD processes are compatible with the corresponding ALD processes, i.e. [Al(NiPr2)2(DMP)] + H2O and [Zn(DMP)2] + H2O, for the Al2O3 and ZnO films, thus opening up new horizons for the fabrication of novel metal-oxide : organic superlattice structures for e.g. flexible gas-barrier coatings or wearable thermoelectrics.

Atomic Layer Deposition of Intermetallic Fe4Zn9 Thin Films from Diethyl Zinc.

We present a new type of atomic layer deposition (ALD) process for intermetallic thin films, where diethyl zinc (DEZ) serves as a coreactant. In our proof-of-concept study, FeCl3 is used as the second precursor. The FeCl3 + DEZ process yields in situ crystalline Fe4Zn9 thin films, where the elemental purity and Fe/Zn ratio are confirmed by time-of-flight elastic recoil detection analysis (TOF-ERDA), Rutherford backscattering spectrometry (RBS), atomic absorption spectroscopy (AAS), and energy-dispersive X-ray spectroscopy (EDX) analyses. The film thickness is precisely controlled by the number of precursor supply cycles, as expected for an ALD process. The reaction mechanism is addressed by computational density functional theory (DFT) modeling. We moreover carry out preliminary tests with CuCl2 and Ni(thd)2 in combination with DEZ to confirm that these processes yield Cu-Zn and Ni-Zn thin films with DEZ as well. Thus, we envision an opening of a new ALD approach based on DEZ for intermetallic/metal alloy thin films.

Atomic/molecular layer deposition of cerium(III) hybrid thin films using rigid organic precursors.

An atomic/molecular layer deposition (ALD/MLD) process for the fabrication of cerium-based metal-organic hybrid films is demonstrated for the first time. The highly reactive cerium(III) guanidinate precursor [Ce(dpdmg)3] was employed in combination with organic precursors composed of rigid backbones, terephthalic acid (TPA) and hydroquinone (HQ) for the growth of the respective hybrid films. Growth rates of the films as high as 5.4 Å per cycle for Ce-TPA and 4.8 Å per cycle for Ce-HQ at a deposition temperature of 200 °C were obtained. Density functional theory (DFT) investigations confirm the favorable interaction between the cerium precursor and the organic co-reactants and predict that Ce maintains its +3 oxidation state in the films. This was also confirmed experimentally by X-ray photoelectron spectroscopy (XPS). Additionally, the films are highly UV absorbing. Hence, we envision that these films could find future application as promising redox active materials and/or UV absorbing materials.

Gas-phase deposition of di- and tetra-lithium salts of 2,5-dihydroxyterephthalic acid.

Thin films of two ambipolar lithium-organic electrode materials, Li2DHTP and Li4DHTP, are grown from gaseous precursors, Li(thd) (tetramethyl heptanedione) and DHTP (dihydroxyterephthalic acid). These precursors are pulsed into the reactor in a sequential manner like in atomic/molecular layer deposition, but the reaction product, i.e. the di- or the tetra-lithium salt, is controlled by adjusting the precursor pulse lengths.

Role of Anionic Backbone in NHC-Stabilized Coinage Metal Complexes: New Precursors for Atomic Layer Deposition.

Cu and Ag precursors that are volatile, reactive, and thermally stable are currently of high interest for their application in atomic-layer deposition (ALD) of thin metal films. In pursuit of new precursors for coinage metals, namely Cu and Ag, a series of new N-heterocyclic carbene (NHC)-based CuI and AgI complexes were synthesized. Modifications in the substitution pattern of diketonate-based anionic backbones led to five monomeric Cu complexes and four closely related Ag complexes with the general formula [M(tBu NHC)(R)] (M=Cu, Ag; tBu NHC=1,3-di-tert-butyl-imidazolin-2-ylidene; R=diketonate). Thermal analysis indicated that most of the Cu complexes are thermally stable and volatile compared to the more fragile Ag analogs. One of the promising Cu precursors was evaluated for the ALD of nanoparticulate Cu metal deposits by using hydroquinone as the reducing agent at appreciably low deposition temperatures (145-160 °C). This study highlights the considerable impact of the employed ligand sphere on the structural and thermal properties of metal complexes that are relevant for vapor-phase processing of thin films.

Atomic and Molecular Layer Deposition of Alkali Metal Based Thin Films.

Atomic layer deposition (ALD) is the fastest growing thin-film technology in microelectronics, but it is also recognized as a promising fabrication strategy for various alkali-metal-based thin films in emerging energy technologies, the spearhead application being the Li-ion battery. Since the pioneering work in 2009 for Li-containing thin films, the field has been rapidly growing and also widened from lithium to other alkali metals. Moreover, alkali-metal-based metal-organic thin films have been successfully grown by combining molecular layer deposition (MLD) cycles of the organic molecules with the ALD cycles of the alkali metal precursor. The current literature describes already around 100 ALD and ALD/MLD processes for alkali-metal-bearing materials. Interestingly, some of these materials cannot even be made by any other synthesis route. In this review, our intention is to present the current state of research in the field by (i) summarizing the ALD and ALD/MLD processes so far developed for the different alkali metals, (ii) highlighting the most intriguing thin-film materials obtained thereof, and (iii) addressing both the advantages and limitations of ALD and MLD in the application space of these materials. Finally, (iv) a brief outlook for the future perspectives and challenges of the field is given.

Role of terminal groups in aromatic molecules on the growth of Al2O3-based hybrid materials.

Hybrid materials composed of organic and inorganic components offer the opportunity to develop interesting materials with well-controlled properties. Molecular Layer Deposition (MLD) is a suitable thin film deposition technique for the controlled growth of thin, conformal hybrid films. Despite the great interest in these materials, a detailed understanding of the atomistic mechanism of MLD film growth is still lacking. This paper presents a first principles investigation of the detailed mechanism of the growth of hybrid organic-inorganic thin films of aluminium oxide and aromatic molecules with different terminal groups deposited by MLD. We investigate the chemistry of the MLD process between the post-TMA pulse methyl-terminated Al2O3 surface and the homo- or hetero-bifunctional aromatic compounds with hydroxy (OH) and/or amino (NH2) terminal groups: hydroquinone (HQ), p-phenylenediamine (PD) and 4-aminophenol (AP). Double reactions of aromatic molecules with the alumina surface are also explored. We show that all aromatic precursor molecules bind favourably to the methyl terminated Al2O3, via formation of Al-O and Al-N bonds and CH4 elimination. While reaction energetics suggest a higher reactivity of the OH group with TMA in comparison to the NH2 group, which could enable the double reaction phenomenon for HQ, we propose that the upright configuration will be present so that the organic molecules are self-assembled in an upright configuration, which leads to thicker hybrid films. Interactions between the methyl-terminated Al2O3 with substituted phenyls are investigated to examine the influence of phenyl functionalisation on the chemistry of the terminal groups. Reaction energetics show that phenyl functionalization actually promotes an upright configuration of the molecule, which leads to thicker and more flexible films, as well as tuning the properties of the aromatic components of the hybrid films. We also investigate the interactions between methyl-terminated Al2O3 with new possible MLD organic precursors, hydroquinone bis(2-hydroxyethyl)ether and 1,1'-biphenyl-4,4'-diamine. DFT shows that both aromatic molecules react favourably with TMA and are worthy of further experimental investigation.

Atomic/molecular layer deposition of Ni-terephthalate thin films.

Atomic/molecular layer deposition (ALD/MLD) is currently strongly emerging as an intriguing route for novel metal-organic thin-film materials. This approach already covers a variety of metal and organic components, and potential applications related to e.g. sustainable energy technologies. Among the 3d metal components, nickel has remained unexplored so far. Here we report a robust and efficient ALD/MLD process for the growth of high-quality nickel terephthalate thin films. The films are deposited from Ni(thd)2 (thd: 2,2,6,6-tetramethyl-3,5-heptanedionate) and terephthalic acid (1,4-benzenedicarboxylic acid) precursors in the temperature range of 180-280 °C, with appreciably high growth rates up to 2.3 Å per cycle at 200 °C. The films are amorphous but the local structure and chemical state of the films are addressed based on XRR, FTIR and RIXS techniques.

Photoactive Thin-Film Structures of Curcumin, TiO2 and ZnO.

Curcumin is known as a biologically active compound and a possible antimicrobial agent. Here, we combine it with TiO2 and ZnO semiconductors, known for their photocatalytic properties, with an eye towards synergistic photo-harvesting and/or antimicrobial effects. We deposit different nanoscale multi-layer structures of curcumin, TiO2 and ZnO, by combining the solution-based spin-coating (S-C) technique and the gas-phase atomic layer deposition (ALD) and molecular layer deposition (MLD) thin-film techniques. As one of the highlights, we demonstrate for these multi-layer structures a red-shift in the absorbance maximum and an expansion of the absorbance edge as far as the longest visible wavelength region, which activates them for the visible light harvesting. The novel fabrication approaches introduced here should be compatible with, e.g., textile substrates, opening up new horizons for novel applications such as new types of protective masks with thin conformal antimicrobial coatings.

Thermal Transport and Thermoelectric Effect in Composites of Alumina and Graphene-Augmented Alumina Nanofibers.

The remarkable tunability of 2D carbon structures combined with their non-toxicity renders them interesting candidates for thermoelectric applications. Despite some limitations related to their high thermal conductivity and low Seebeck coefficients, several other unique properties of the graphene-like structures could out-weight these weaknesses in some applications. In this study, hybrid structures of alumina ceramics and graphene encapsulated alumina nanofibers are processed by spark plasma sintering to exploit advantages of thermoelectric properties of graphene and high stiffness of alumina. The paper focuses on thermal and electronic transport properties of the systems with varying content of nanofillers (1-25 wt.%) and demonstrates an increase of the Seebeck coefficient and a reduction of the thermal conductivity with an increase in filler content. As a result, the highest thermoelectric figure of merit is achieved in a sample with 25 wt.% of the fillers corresponding to ~3 wt.% of graphene content. The graphene encapsulated nanofibrous fillers, thus, show promising potential for thermoelectric material designs by tuning their properties via carrier density modification and Fermi engineering through doping.

Functionally Graded Tunable Microwave Absorber with Graphene-Augmented Alumina Nanofibers.

Graphene is currently attracting attention for radiation absorption particularly at gigahertz and terahertz frequencies. In this work, composites formed by graphene-augmented γ-Al2O3 nanofibers embedded into the α-Al2O3 matrix are tested for X-band absorption efficiency. Composites with 15 and 25 wt % of graphene fillers with shielding effectiveness (SE) of 38 and 45 dB, respectively, show a high reflection coefficient, while around the electrical percolation threshold (∼1 wt %), an SE of 10 dB was achieved. Furthermore, based on the dielectric data obtained for varying fractions of graphene-/γ-Al2O3-added fillers, a functionally graded multilayer is constructed to maximize the device efficiency. The fabricated multilayer offers the highest absorption efficiency of 99.99% at ∼9.6 GHz and a full X-band absorption of >90% employing five lossy layers of 1-3-5-15 and 25 wt % of graphene/γ-Al2O3 fillers. The results prove a remarkable potential of the fillers and various multilayer designs for broad-band and frequency-specific microwave absorbers.