Electrical Double-Layer Transistors Comprising Block Copolymer Electrolytes for Low-Power-Consumption Photodetectors.

Electrical double-layer transistors (EDLTs) have received extensive research attention owing to their exciting advantages of low working voltage, high biocompatibility, and sensitive interfacial properties in ultrasensitive portable sensing applications. Therefore, it is of great interest to reduce photodetectors' operating voltage and power consumption by utilizing photo-EDLT. In this study, a series of block copolymers (BCPs) of poly(4-vinylpyridine)-block-poly(ethylene oxide) (P4VP-b-PEO) with different compositions were applied to formulate polyelectrolyte with indigo carmine salt in EDLT. Accordingly, PEO conduces ion conduction in the BCP electrolyte and enhances the carrier transport capability in the semiconducting channel; P4VP boosts the photocurrent by providing charge-trapping sites during light illumination. In addition, the severe aggregation of PEO is mitigated by forming a BCP structure with P4VP, enhancing the stability and photoresponse of the photo-EDLT. By optimizing the BCP composition, EDLT comprising P4VP16k-b-PEO5k and indigo carmine provides the highest specific detectivity of 2.1 × 107 Jones, along with ultralow power consumptions of 0.59 nW under 450 nm light illumination and 0.32 pW under dark state. The results indicate that photo-EDLT comprising the BCP electrolyte is a practical approach to reducing phototransistors' operating voltage and power consumption.

Genomic prediction within and across maize landrace derived populations using haplotypes.

Genomic prediction (GP) using haplotypes is considered advantageous compared to GP solely reliant on single nucleotide polymorphisms (SNPs), owing to haplotypes' enhanced ability to capture ancestral information and their higher linkage disequilibrium with quantitative trait loci (QTL). Many empirical studies supported the advantages of haplotype-based GP over SNP-based approaches. Nevertheless, the performance of haplotype-based GP can vary significantly depending on multiple factors, including the traits being studied, the genetic structure of the population under investigation, and the particular method employed for haplotype construction. In this study, we compared haplotype and SNP based prediction accuracies in four populations derived from European maize landraces. Populations comprised either doubled haploid lines (DH) derived directly from landraces, or gamete capture lines (GC) derived from crosses of the landraces with an inbred line. For two different landraces, both types of populations were generated, genotyped with 600k SNPs and phenotyped as lines per se for five traits. Our study explores three prediction scenarios: (i) within each of the four populations, (ii) across DH and GC populations from the same landrace, and (iii) across landraces using either DH or GC populations. Three haplotype construction methods were evaluated: 1. fixed-window blocks (FixedHB), 2. LD-based blocks (HaploView), and 3. IBD-based blocks (HaploBlocker). In within population predictions, FixedHB and HaploView methods performed as well as or slightly better than SNPs for all traits. HaploBlocker improved accuracy for certain traits but exhibited inferior performance for others. In prediction across populations, the parameter setting from HaploBlocker which controls the construction of shared haplotypes between populations played a crucial role for obtaining optimal results. When predicting across landraces, accuracies were low for both, SNP and haplotype approaches, but for specific traits substantial improvement was observed with HaploBlocker. This study provides recommendations for optimal haplotype construction and identifies relevant parameters for constructing haplotypes in the context of genomic prediction.

Association of lipoprotein lipase (LPL) gene variants with hyperlipidemic acute pancreatitis in southeastern Chinese population.

Objective: The study aims to explore the relationship between lipoprotein lipase (LPL) variants and hyperlipidemic acute pancreatitis (HLAP) in the southeastern Chinese population. Subjects and methods: In total, 80 participants were involved in this study (54 patients with HLAP and 26 controls). All coding regions and intron-exon boundaries of the LPL gene were sequenced. The correlations between variants and phenotypes were also analysed. Results: The rate of rare LPL variants in the HLAP group is 14.81% (8 of 54), higher than in controls. Among the detected four variants (rs3735959, rs371282890, rs761886494 and rs761265900), the most common variant was rs371282890. Further analysis demonstrated that subjects with rs371282890 "GC" genotype had a 2.843-fold higher risk for HLAP (odds ratio [OR]: 2.843, 95% confidence interval [CI]: 1.119-7.225, p = 0.028) than subjects with the "CC" genotype. After adjusting for sex, the association remained significant (adjusted OR: 3.083, 95% CI: 1.208-7.869, p = 0.018). Subjects with rs371282890 "GC" genotype also exhibited significantly elevated total cholesterol, triglyceride and non-high-density lipoprotein cholesterol levels in all the participants and the HLAP group (p < 0.05). Conclusion: Detecting rare variants in LPL might be valuable for identifying higher-risk patients with HLAP and guiding future individualised therapeutic strategies.

Reversible Molecular Conformation Transitions of Smectic Liquid Crystals for Light/Bias-Gated Transistor Memory.

In recent years, organic photonic field-effect transistors have made remarkable progress with the rapid development of conjugated polycrystalline materials. Liquid crystals, with their smooth surface, defined layer thickness, and crystalline structures, are commonly used for these advantages. In this work, a series of smectic liquid crystalline molecules, 2,9-didecyl-dinaphtho-thienothiophene (C10-DNTT), 2,7-didecyl-benzothieno-benzothiopene (C10-BTBT), 3,9-didecyl-dinaphtho-thiophene (C10-DNT), and didecyl-sexithiophene (C10-6T), have been used in photonic transistor memory, functioning as both hole-transport channels and electron traps to investigate systematically the reasons and mechanisms behind the memory behavior of smectic liquid crystals. After thermal annealing, C10-BTBT and C10-6T/C10-DNTT are homeotropically aligned from the smectic A and smectic X phases, respectively. The 3D-ordered structure of these smectic-aligned crystals contributed to efficient photowriting and electrical erasing processes. Among them, the device performance of C10-BTBT was particularly significant, with a memory window of 21 V. The memory ratio could reach 1.5 × 106 and maintain a memory ratio of over 3 orders after 10,000 s, contributing to its smectic A structure. Through the research, we confirmed the memory and light/bias-gated behaviors of these smectic liquid crystalline molecules, attributing them to reversible molecular conformation transitions and the inherent structural inhomogeneity inside the polycrystalline channel layer.

Investigating the Mobility-Compressibility Properties of Conjugated Polymers by the Contact Film Transfer Method with Prestrain.

Up to now, researches on the mobility-stretchability of semiconducting polymers are extensively investigated, but little attention was  paid to their morphology and field-effect transistor characteristics under compressive strains, which is equally crucial in wearable electronic applications. In this work, a contact film transfer method is applied to evaluate the mobility-compressibility properties of conjugated polymers. A series of isoindigo-bithiophene conjugated polymers with symmetric carbosilane side chains (P(SiSi)), siloxane-terminated alkyl side chains (P(SiOSiO)), and combined asymmetric side chains (P(SiOSi)) are investigated. Accordingly, a compressed elastomer slab is used to transfer and compress the polymer films by releasing prestrain, and the morphology and mobility evolutions of these polymers are tracked. It is found that P(SiOSi) outperforms the other symmetric polymers including P(Si─Si) and P(SiO─SiO), having the ability to dissipate strain with its shortened lamellar spacing and orthogonal chain alignment. Notably, the mechanical durability of P(SiOSi) is also enhanced after consecutive compress-release cycles. In addition, the contact film transfer technique is demonstrated to be applicable to investigate the compressibility of different semiconducting polymers. These results demonstrate a comprehensive approach to understand the mobility-compressibility properties of semiconducting polymers under tensile and compressive strains.

Tunable Thermoelectric Performance of the Nanocomposites Formed by Diketopyrrolopyrrole/Isoindigo-Based Donor-Acceptor Random Conjugated Copolymers and Carbon Nanotubes.

This paper presents the development of thermoelectric properties in nanocomposites comprising donor-acceptor random conjugated copolymers and single-walled carbon nanotubes (SWCNTs). The composition of the conjugated polymers, specifically the ratio of diketopyrrolopyrrole (DPP) to isoindigo (IID), is manipulated to design a series of random conjugated copolymers (DPP0, DPP5, DPP10, DPP30, DPP50, DPP90, DPP95, and DPP100). The objective is to improve the dispersion of SWCNTs into smaller bundles, leading to enhanced thermoelectric properties of the polymer/SWCNT nanocomposite. This dispersion strategy promotes an interconnected conducting network, which plays a critical role in optimizing the thermoelectric performance. Accordingly, the effects of morphologies on the thermoelectric properties of the nanocomposites are systematically investigated. The DPP95/SWCNT nanocomposite exhibits the strongest interaction, resulting in the highest power factor (PF) of 711.1 µW m-1 K-2, derived from the high electrical conductivity of 1690 S cm-1 and Seebeck coefficient of 64.8 µV K-1. The prototype flexible thermoelectric generators assembled with a DPP95/SWCNT film achieve a maximum power output of 20.4 µW m-2 at a temperature difference of 29.3 K. These findings highlight the potential of manipulating the composition of random conjugated copolymers and incorporating SWCNTs to efficiently harvest low-grade waste heat in wearable thermoelectric devices.

Unraveling the Effect of Stereoisomerism on Mobility-Stretchability Properties of n-Type Semiconducting Polymers with Biobased Epimers as Conjugation Break Spacers.

The development of intrinsically stretchable n-type semiconducting polymers has garnered much interest in recent years. In this study, three biobased dianhydrohexitol epimers of isosorbide (ISB), isomannide (IMN), and isoidide (IID), derived from cellulose, were incorporated into the backbone of a naphthalenediimide (NDI)-based n-type semiconducting polymer as conjugation break spacers (CBSs). Accordingly, three polymers were synthesized through the Migita-Kosugi-Stille coupling polymerization with NDI, bithiophene, and CBSs, and the mobility-stretchability properties of these polymers were investigated and compared with those of their analogues with conventional alkyl-based CBSs. Experimental results showed that the different configurations of these epimers in CBSs sufficiently modulate the melt entropies, surface aggregation, crystallographic parameters, chain entanglements, and mobility-stretchability properties. Comparable ductility and edge-on preferred stacking were observed in polymers with endo- or exo-configurations in IMN- and IID-based polymers. By contrast, ISB with endo-/exo-configurations exhibits an excellent chain-realigning capability, a reduced crack density, and a proceeding bimodal orientation under tensile strain. Therefore, the ISB-based polymer exhibits high orthogonal electron mobility retention of (53 and 56)% at 100% strain. This study is one of the few examples where biobased moieties are incorporated into semiconducting polymers as stress-relaxation units. Additionally, this is the first study to report on the effect of stereoisomerism of epimers on the morphology and mobility-stretchability properties of semiconducting polymers.

Association of Apolipoprotein A5 Gene Variants with Hyperlipidemic Acute Pancreatitis in Southeastern China.

Background: Apolipoprotein A5 (APOA5) is involved in serum triglyceride (TG) regulation. Several studies have reported that the rs651821 locus in the APOA5 gene is associated with serum TG levels in the Chinese population. However, no research has been performed regarding the association between the variants of rs651821 and the risk of hyperlipidemic acute pancreatitis (HLAP). Methods: A case-control study was conducted and is reported following the STROBE guidelines. We enrolled a total of 88 participants in this study (60 HLAP patients and 28 controls). APOA5 was genotyped using PCR and Sanger sequencing. Logistic regression models were conducted to calculate odds ratios and a 95% confidence interval. Results: The genotype distribution of the rs651821 alleles in both groups follow the Hardy-Weinberg distribution. The frequency of the "C" allele in rs651821 was increased in HLAP patients compared to controls. In the recessive model, subjects with the "CC" genotype had an 8.217-fold higher risk for HLAP (OR = 8.217, 95% CI: 1.023-66.01, p = 0.046) than subjects with the "TC+TT" genotypes. After adjusting for sex, the association remained significant (OR = 9.898, 95% CI: 1.176-83.344, p = 0.035). Additionally, the "CC" genotype was related to an increased TG/apolipoprotein B (APOB) ratio and fasting plasma glucose (FPG) levels. Conclusions: Our findings suggest that the C allele of rs651821 in APOA5 increases the risk of HLAP in persons from Southeastern China.

Tailoring Wavelength-Adaptive Visual Neuroplasticity Transitions of Synaptic Transistors Comprising Rod-Coil Block Copolymers for Dual-Mode Photoswitchable Learning/Forgetting Neural Functions.

The vision-inspired artificial neural network based on optical synapses has drawn a tremendous amount of attention for emulating biological senses. Although photoexcitation-induced synaptic functionalities have been widely studied, optical habituation via the photoinhibitory pathway is yet to be demonstrated for sophisticated biomimetic visual adaptive systems. Here, the first optical neuromorphic block copolymer (BCP) phototransistor is demonstrated as an all-optical operation responding to various wavelengths, fulfilling photoassisted dynamic learning/forgetting cycles via optical potentiation without gate bias. The polyfluorene BCPs were precisely designed to enable wavelength-adaptive responses, benefiting from interfacial semiconductor/electret morphology and the crystallinity/electron affinity of the BCPs. Notably, this is the first work to simultaneously exhibit fully light-controlled short- and long-term memory based on organic material systems. The device presents a high current contrast above 100-fold and long-term retention over 104 s. As a proof-of-concept for neural networks, a 6 × 6 array of photosynapses performed outstanding visual pattern learning/forgetting with high accuracy. This study exploits the design strategy of a conjugated BCP electret to unleash the full potential of wavelength-adaptive visual neuroplasticity transitions. It provides an effective architecture for designing high-performance and high-storage capacity required applications in next-generation neuromorphic systems.

Molecular template growth of organic heterojunctions to tailor visual neuroplasticity for high performance phototransistors with ultralow energy consumption.

The optical and charge transport properties of organic semiconductors are strongly influenced by their morphology and molecular structures. Here we report the influence of a molecular template strategy on anisotropic control via weak epitaxial growth of a semiconducting channel for a dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT)/para-sexiphenyl (p-6P) heterojunction. The aim is to improve charge transport and trapping, to enable tailoring of visual neuroplasticity. The proposed phototransistor devices, comprising a molecular heterojunction with optimized molecular template thickness, exhibited an excellent memory ratio (ION/IOFF) and retention characteristics in response to light stimulation, owing to the enhanced orientation/packing of DNTT molecules and a favorable match between the LUMO/HOMO levels of p-6P and DNTT. The best performing heterojunction exhibits visual synaptic functionalities, including an extremely high pair-pulse facilitation index of ∼206%, ultralow energy consumption of 0.54 fJ, and zero-gate operation, under ultrashort pulse light stimulation to mimic human-like sensing, computing, and memory functions. An array of heterojunction photosynapses possess a high degree of visual pattern recognition and learning, to mimic the neuroplasticity of human brain activities through a rehearsal learning process. This study provides a guide to the design of molecular heterojunctions for tailoring high-performance photonic memory and synapses for neuromorphic computing and artificial intelligence systems.

High-Performance Phototransistor Memory with an Ultrahigh Memory Ratio Conferred Using Hydrogen-Bonded Supramolecular Electrets.

As the research of photonic electronics thrives, the enhanced efficacy from an optic unit cell can considerably improve the performance of an optoelectronic device. In this regard, organic phototransistor memory with a fast programming/readout and a distinguished memory ratio produces an advantageous outlook to fulfill the demand for advanced applications. In this study, a hydrogen-bonded supramolecular electret is introduced into the phototransistor memory, which comprises porphyrin dyes, meso-tetra(4-aminophenyl)porphine, meso-tetra(p-hydroxyphenyl)porphine, and meso-tetra(4-carboxyphenyl)porphine (TCPP), and insulated polymers, poly(4-vinylpyridine) and poly(4-vinylphenol) (PVPh). To combine the optical absorption of porphyrin dyes, dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT) is selected as a semiconducting channel. The porphyrin dyes serve as the ambipolar trapping moiety, while the insulated polymers form a barrier to stabilize the trapped charges by forming hydrogen-bonded supramolecules. We find that the hole-trapping capability of the device is determined by the electrostatic potential distribution in the supramolecules, whereas the electron-trapping capability and the surface proton doping originated from hydrogen bonding and interfacial interactions. Among them, PVPh:TCPP with an optimal hydrogen bonding pattern in the supramolecular electret produces the highest memory ratio of 1.12 × 108 over 104 s, which is the highest performance among the reported achievements. Our results suggest that the hydrogen-bonded supramolecular electret can enhance the memory performance by fine-tuning their bond strength and cast light on a potential pathway to future photonic electronics.

Enhancing the Performance of Electret-Free Phototransistor Memory by Using All-Conjugated Block Copolymer.

Conjugated polymers are of great interest owing to their potential in stretchable electronics to function under complex deformation conditions. To improve the performance of conjugated polymers, various structural designs have been proposed and these conjugated polymers are specially applied in exotic optoelectronics. In this work, a series of all-conjugated block copolymers (PII2T-b-PNDI2T) comprising poly(isoindigo-bithiophene) (PII2T) and poly(naphthalenediimide-bithiophene) (PNDI2T) are developed with varied compositions and applied to electret-free phototransistor memory. Accordingly, these memory devices present p-type transport capability and electrical-ON/photo-OFF memory behavior. The efficacy of the all-conjugated block copolymer design in improving the memory-photoresponse properties in phototransistor memory is revealed. By optimizing the composition of the block copolymer, the corresponding device achieves a wide memory window of 36 V and a high memory ratio of 7 × 104 . Collectively, the results of this study indicate a new concept for designing electret-free phototransistor memory by using all-conjugated block copolymer heterojunctions to mitigate the phase separation of conjugated polymer blends. Meanwhile, the intrinsic optoelectronic properties of the constituent conjugated polymers can be well-maintained by using an all-conjugated block copolymer design.

Fully Photoswitchable Phototransistor Memory Comprising Perovskite Quantum Dot-Based Hybrid Nanocomposites as a Photoresponsive Floating Gate.

Tremendous research efforts have been dedicated into the field of photoresponsive nonvolatile memory devices owing to their advantages of fast transmitting speed, low latency, and power-saving property that are suitable for replacing current electrical-driven electronics. However, the reported memory devices still rely on the assistance of gate bias to program them, and a real fully photoswitchable transistor memory is still rare. Herein, we report a phototransistor memory device comprising polymer/perovskite quantum dot (QD) hybrid nanocomposites as a photoresponsive floating gate. The perovskite QDs offer an effective discreteness with an excellent photoresponse that are suitable for photogate application. In addition, a series of ultraviolet (UV)-sensitive insulating polymer hosts were designed to investigate the effect of UV light on the memory behavior. We found that a fully photoswitchable memory device was fulfilled by using the independent and sequential photoexcitation between a UV-sensitive polymer host and a visible light-sensitive QD photogates, which produced decent photoresponse, memory switchability, and highly stable memory retention with a memory ratio of 104 over 104 s. This study not only unraveled the mystery in the fully photoswitchable functionality of nonvolatile memory but also enlightened their potential in the next-generation electronics for light-fidelity application.

Harnessing of Spatially Confined Perovskite Nanocrystals Using Polysaccharide-based Block Copolymer Systems.

Metal halide perovskite nanocrystals (PVSK NCs) are generally unstable upon their transfer from colloidal dispersions to thin film devices. This has been a major obstacle limiting their widespread application. In this study, we proposed a new approach to maintain their exceptional optoelectronic properties during this transfer by dispersing brightly emitting cesium lead halide PVSK NCs in polysaccharide-based maltoheptaose-block-polyisoprene-block-maltoheptaose (MH-b-PI-b-MH) triblock copolymer (BCP) matrices. Instantaneous crystallization of ion precursors with favorable coordination to the sugar (maltoheptaose) domains produced ordered NCs with varied nanostructures of controlled domain size (≈10-20 nm). Confining highly ordered and low dimension PVSK NCs in polysaccharide-based BCPs constituted a powerful tool to control the self-assembly of BCPs and PVSK NCs into predictable structures. Consequently, the hybrid thin films exhibited excellent durability to humidity and stretchability with a relatively high PL intensity and photoluminescence quantum yield (>70%). Furthermore, stretchable phototransistor memory devices were produced and maintained with a good memory ratio of 105 and exhibited a long-term memory retention over 104 s at a high strain of 100%.

Fast Photoresponsive Phototransistor Memory Using Star-Shaped Conjugated Rod-Coil Molecules as a Floating Gate.

With the explosive growth in data generation, photomemory capable of multibit data storage is highly desired to enhance the capacity of storage media. To improve the performance of phototransistor memory, an organic-molecule-based electret with an elaborate nanostructure is of great importance because it can enable multibit data storage in a memory device with high stability. In this study, a series of star-shaped rod-coil molecules consisting of perylenediimide (PDI) and biobased solanesol were synthesized in two-armed (PDI-Sol2), four-armed (PDI-Sol4), and six-armed (PDI-Sol6) architectures. Their molecular architecture-morphology relationships were investigated, and phototransistor memory was fabricated and characterized to evaluate the structure-performance relationship of these rod-coil molecules. Accordingly, the memory devices were enabled by photowriting with panchromatic light (405-650 nm) and electrical erasing using a gate bias. The PDI-Sol4-based memory device showed high memory ratios of 10 000 over 10 000 s and a rapid multilevel photoresponse of 50 ms. This achievement is related to the favorable energy-level alignment, isolated nanostructure, and face-on orientation of PDI-Sol4, which eliminated the charge tunneling barrier. The results of this study provide a new strategy for tailoring nanostructures in organic-molecule-based electrets by using a star-shaped rod-coil architecture for high-performance phototransistor memory.

Low-Energy-Consumption and Electret-Free Photosynaptic Transistor Utilizing Poly(3-hexylthiophene)-Based Conjugated Block Copolymers.

Neuromorphic computation possesses the advantages of self-learning, highly parallel computation, and low energy consumption, and is of great promise to overcome the bottleneck of von Neumann computation. In this work, a series of poly(3-hexylthiophene) (P3HT)-based block copolymers (BCPs) with different coil segments, including polystyrene, poly(2-vinylpyridine) (P2VP), poly(2-vinylnaphthalene), and poly(butyl acrylate), are utilized in photosynaptic transistor to emulate paired-pulse facilitation, spike time/rate-dependent plasticity, short/long-term neuroplasticity, and learning-forgetting-relearning processes. P3HT serves as a carrier transport channel and a photogate, while the insulating coils with electrophilic groups are for charge trapping and preservation. Three main factors are unveiled to govern the properties of these P3HT-based BCPs: i) rigidity of the insulating coil, ii) energy levels between the constituent polymers, and iii) electrophilicity of the insulating coil. Accordingly, P3HT-b-P2VP-based photosynaptic transistor with a sought-after BCP combination demonstrates long-term memory behavior with current contrast up to 105 , short-term memory behavior with high paired-pulse facilitation ratio of 1.38, and an ultralow energy consumption of 0.56 fJ at an operating voltage of -0.0003 V. As far as it is known, this is the first work to utilize conjugated BCPs in an electret-free photosynaptic transistor showing great potential to the artificial intelligence technology.

The Association of Human Leukocyte Antigen and COVID-19 in Southern China.

Human leukocyte antigen (HLA) polymorphism is hypothesized to be associated with diverse immune responses toward infectious diseases. Herein, by comparing against multiple subpopulation groups as control, we confirmed that HLA-B*15:27 and HLA-DRB1*04:06 were associated with coronavirus disease 2019 susceptibility in China. Both alleles were predicted to have weak binding affinities toward viral proteins.

Conception of a Smart Artificial Retina Based on a Dual-Mode Organic Sensing Inverter.

The human visual system enables perceiving, learning, remembering, and recognizing elementary visual information (light, colors, and images), which has inspired the development of biomimicry visual system-based electronic devices. Photosensing and synaptic devices are integrated into these systems to realize elementary information storage and recognition to imitate image processing. However, the severe restrictions of the monotonic light response and complicated circuitry design remain challenges for the development of artificial visual devices. Here, the concept of a smart artificial retina based on an organic optical sensing inverter device that can be operated as a multiwavelength photodetector and recorder is reported first. The device exhibits a light-triggered broadband (red/green/blue) response, a low energy consumption as low as ±5 V, and an ultrafast response speed (<300 ms). Moreover, the multifunctional component is also combined within a single cell for health monitoring of the artificial retina during light surveillance to avoid retinopathy. Proof-of-concept devices, by simplifying the circuitry and providing dual-mode functions, can contribute significantly to the development of bionics design and broaden the horizon for smart artificial retinas in the human visual system.

Comprehensive Non-volatile Photo-programming Transistor Memory via a Dual-Functional Perovskite-Based Floating Gate.

Photonic transistor memory has received increasing attention as next-generation optoelectronic devices for light fidelity (Li-Fi) application due to the attractive advantages of ultra-speed, high security, and low power consumption. However, most transistor-type photonic memories developed to date still rely on electrical bias for operation, imposing certain limits on data transmission efficiency and energy consumption. In this study, the dual manipulation of "photo-writing" and "photo-erasing" of a novel photonic transistor memory is successfully realized by cleverly utilizing the complementary light absorption between the photoactive material, n-type BPE-PTCDI, in the active channel and the hybrid floating gate, CH3NH3PbBr3/poly(2-vinylpyridine). The fabricated device not only can be operated under the full spectrum but also shows stable switching cycles of photo-writing (PW)-reading (R)-photo-erasing (PE)-reading (R) (PW-R-PE-R) with a high memory ratio of ∼104, and the memory characteristics possess a stable long-term retention of >104 s. Notably, photo-erasing only requires 1 s light illumination. Due to the fully optical functionality, the rigid gate electrode is removed and a novel two-terminal flexible photonic memory is fabricated. The device not only exhibits stable electrical performance after 1000 bending cycles but also manifests a multilevel functional behavior, demonstrating a promising potential for the future development of photoactive electronic devices.

Stretchable OFET Memories: Tuning the Morphology and the Charge-Trapping Ability of Conjugated Block Copolymers through Soft Segment Branching.

The mechanical properties and structural design flexibility of charge-trapping polymer electrets have led to their widespread use in organic field-effect transistor (OFET) memories. For example, in the electrets of polyfluorene-based conjugated/insulating block copolymers (BCPs), the confined fiberlike polyfluorene nanostructures in the insulating polymer matrix act as effective hole-trapping sites, leading to controllable memory performance through the design of BCPs. However, few studies have reported intrinsically stretchable charge-trapping materials and their memory device applications, and a practical method to correlate the thin-film morphology of BCP electrets with their charge-trapping ability has not yet been developed. In this study, a series of new conjugated/insulating BCPs, poly(9,9-di-n-hexyl-2,7-fluorene)-block-poly(δ-decanolactone)s (PF-b-PDLx, x = 1-3), as stretchable hole-trapping materials are reported. The linear and branched PDL blocks with comparable molecular weights were used to investigate the effect of polymer architecture on morphology and device performance. Moreover, the coverage area of the polyfluorene nanofibers on the BCP films was extracted from atomic force microscopy images, which can be correlated with the trapping density of the polymer electrets. The branched PDL segments not only improve stretchability but also tailor crystallinity and phase separation of the BCPs, thus increasing their charge-trapping ability. The OFET memory device with PF-b-PDL3 as the electret layer exhibited the largest memory window (102 V) and could retain its performance at up to 100% strain. This research highlights the importance of the BCP design for developing stretchable charge-trapping materials.