Dependence of cathodoluminescence on layer resistance applied for measurement of thin-layer sheet resistance.

The dependence of spatially and spectrally resolved cathodoluminescence in a scanning electron microscope on resistances in semiconductor structures, especially on the layer resistance, is reported. This previously unstudied dependence is utilized for thin-layer sheet-resistance measurement. The method is illustrated by an assessment of lateral confinements in semiconductor-laser heterostructures.

Identification of electron beam vibration sources by separation of magnetic distortion from electric distortion on scanning electron microscope imaging.

Different types of distortions in scanning electron microscopy require different methods of their elimination, and therefore influence of these types on particular elements of the SEM system should be known. The proposed method allows for separation of the direct influence of the magnetic field on the electron beam in the SEM chamber from its influence in the SEM column and from the distortions generated in the SEM scanning block. For this purpose, a series of distorted images is registered for several working distances (between the final aperture of the electron column and the specimen) and for several energies of the electrons. Magnitudes of the distortions are measured on these images. For each applied electron energy, the dependence of the results versus the working distance is approximated with the second-order polynomial function. The analysis of the polynomial coefficients allows for the separation of the above-mentioned kinds of distortions. The presented method enables a selection of the most efficient solution to the distortions reduction. It utilizes the SEM itself and does not need any additional equipment.

New approach to cathodoluminescence studies in application to InGaN/GaN laser diode degradation.

Cathodoluminescence (CL) studies are widely applied in semi-conductor science and technology. However, for structures with a p-n junction the CL spatial distribution can be strongly affected by internal current flows of the electron beam induced current generated within the structure. This influence is the investigated in application to CL studies of degradation in aged laser diodes with InGaN multiquantum wells.

Elimination of scanning electron microscopy image periodic distortions with digital signal-processing methods.

Electromagnetic interference is one of the main distortion sources in scanning electron microscopy. Electromagnetic interference-generated scanning electron microscopy image distortions are usually visible as edge blur (at low scan rates) or vibration (at high scan rates). Hardware solutions to this problem, e.g. electrostatic and magnetic shielding, are expensive and, in some cases, difficult to implement. The current investigations led to a significant decrease in the periodic distortions by a novel adaptation of software-based digital signal processing to scanning electron microscopy problems, without any hardware modification.

In situ electron beam induced current measurements of the local thickness in semiconductor devices.

A quantitative electron beam induced current method is shown, applicable in situ for electron beam current measurement on a semiconductor sample without the need for a Faraday cup. As a validation technique, the measurement of top overlayer thickness in the semiconductor structure was chosen for two reasons. First, the measured thickness is easily verified using the same electron microscope in the secondary electron mode by measuring the layer thickness at the layer edges. Second, the measurement of a layer thickness and its local variations constitute an important issue in semiconductor processing and characterization. The proposed method is used in the planar view of the sample, and also for locations far from the layer edges. Quasi-three-dimensional maps of the thickness spatial distribution are presented.

Buried amorphous-layer impact on dislocation densities in silicon.

The impact of amorphous layers on dislocation densities in silicon piezo-resistors was investigated by means of transmission electron microscopy and chemical etching. Mechanical bevel polishing at a shallow angle and selective etching were applied to assess the dislocation depth distributions. It was found that, despite the presence of additional defects after recrystallization, the initial presence of a buried amorphous layer reduced, after annealing, the dislocation density in the depletion region of a p-n junction, compared with the case of a shallower, surface amorphous layer.