Growth mechanism study and band structure modulation of a manganese doped two-dimensional BlueP-Au network.

Two-dimensional (2D) materials are a very promising material family. The two-dimensional inorganic metal network called BlueP-Au network is rapidly attracting the attention of researchers due to its customizable architecture, adjustable chemical functions and electronic properties. Herein, manganese (Mn) was successfully doped on a BlueP-Au network for the first time, then the doping mechanism and electronic structure evolution was studied by in situ X-ray photoelectron spectroscopy (XPS) based on synchrotron radiation, X-ray absorption spectroscopy (XAS), Scanning Tunneling Microscopy (STM), Density functional theory (DFT), Low-energy electron diffraction (LEED), Angle resolved photoemission spectroscopy (ARPES), etc. Mn atoms tend to be stably adsorbed on two sites of the BlueP-Au network. It was the first observation that atoms can absorb on the two sites stably simultaneously. It is different from the previous adsorption models of BlueP-Au networks. The band structure was also successfully modulated, and overall down about 0.25 eV relative to the Fermi edge. It provided a new strategy for customizing the functional structure of the BlueP-Au network, which has provided new insights into monatomic catalysis, energy storage and nano electronic devices.

Electronic-structure evolution of SrFeO3-xduring topotactic phase transformation.

Oxygen-vacancy-induced topotactic phase transformation between the ABO2.5brownmillerite structure and the ABO3perovskite structure attracts ever-increasing attention due to the perspective applications in catalysis, clean energy field, and memristors. However, a detailed investigation of the electronic-structure evolution during the topotactic phase transformation for understanding the underlying mechanism is highly desired. In this work, multiple analytical methods were used to explore evolution of the electronic structure of SrFeO3-xthin films during the topotactic phase transformation. The results indicate that the increase in oxygen content induces a new unoccupied state of O 2pcharacter near the Fermi energy, inducing the insulator-to-metal transition. More importantly, the hole states are more likely constrained to thedx2-y2orbital than to thed3z2-r2orbital. Our results reveal an unambiguous evolution of the electronic structure of SrFeO3-xfilms during topotactic phase transformation, which is crucial not only for fundamental understanding but also for perspective applications such as solid-state oxide fuel cells, catalysts, and memristor devices.

Understanding the Electronic Structure Evolution of Epitaxial LaNi1-xFexO3 Thin Films for Water Oxidation.

Rare earth nickelates including LaNiO3 are promising catalysts for water electrolysis to produce oxygen gas. Recent studies report that Fe substitution for Ni can significantly enhance the oxygen evolution reaction (OER) activity of LaNiO3. However, the role of Fe in increasing the activity remains ambiguous, with potential origins that are both structural and electronic in nature. On the basis of a series of epitaxial LaNi1-xFexO3 thin films synthesized by molecular beam epitaxy, we report that Fe substitution tunes the Ni oxidation state in LaNi1-xFexO3 and a volcano-like OER trend is observed, with x = 0.375 being the most active. Spectroscopy and ab initio modeling reveal that high-valent Fe3+δ cationic species strongly increase the transition-metal (TM) 3d bandwidth via Ni-O-Fe bridges and enhance TM 3d-O 2p hybridization, boosting the OER activity. These studies deepen our understanding of structural and electronic contributions that give rise to enhanced OER activity in perovskite oxides.

Interaction between the Non-Fullerene Acceptor ITIC and Potassium.

Using density functional theory calculations and photoemission measurements, we have studied the interaction between the non-fullerene small-molecule acceptor ITIC and K atoms (a representative of reactive metals). It is found that the acceptor-donor-acceptor-type geometric structure and the electronic structure of ITIC largely decide the interaction process. One ITIC molecule can combine with more than 20 K atoms. For stoichiometries K x≤6ITIC, the K atoms are attracted to the acceptor units of the molecule and donate their 4s electrons to the unoccupied molecular orbitals. K-ITIC organometallic complexes, characterized by the breaking of some S-C bonds in the donor unit of ITIC and the formation of K-S bonds, are formed for stoichiometries K x≥7ITIC. The complexes are still conjugated despite the breaking of some S-C bonds.

Manipulating the Structural and Electronic Properties of Epitaxial SrCoO2.5 Thin Films by Tuning the Epitaxial Strain.

Structure determines material's functionality, and strain tunes the structure. Tuning the coherent epitaxial strain by varying the thickness of the films is a precise route to manipulate the functional properties in the low-dimensional oxide materials. Here, to explore the effects of the coherent epitaxial strain on the properties of SrCoO2.5 thin films, thickness-dependent evolutions of the structural properties and electronic structures were investigated by X-ray diffraction, Raman spectra, optical absorption spectra, scanning transmission electron microscopy (STEM), and first-principles calculations. By increasing the thickness of the SrCoO2.5 films, the c-axis lattice constant decreases, indicating the relaxation of the coherent epitaxial strain. The energy band gap increases and the Raman spectra undergo a substantial softening with the relaxation of the coherent epitaxial strain. From the STEM results, it can be concluded that the strain causes the variation of the oxygen content in the BM-SCO2.5 films, which results in the variation of band gaps with varying the strain. First-principles calculations show that strain-induced changes in bond lengths and angles of the octahedral CoO6 and tetrahedral CoO4 cannot explain the variation band gap. Our findings offer an alternative strategy to manipulate structural and electronic properties by tuning the coherent epitaxial strain in transition-metal oxide thin films.

Dipole-correlated carrier transportation and orbital reconfiguration in strain-distorted SrNbxTi1-xO3/KTaO3.

Strong electron-correlations can result in un-conventional transportation behaviour, such as metal-insulator transitions, high temperature superconductivity and bad metal conduction. Here we report a distinct transportation characteristic achieved by actively coupling the carriers with randomly distributed lattice-dipoles for strain-distorted SrNbxTi1-xO3. The strong electron correlations split the conduction band, and lead to a distinguished thermal-emitted carrier transportation with an activation energy of ∼10-2 eV. Further consistency was demonstrated by the respective changes in orbital configurations observed in near edge X-ray absorption fine structures. The present investigation demonstrates new mechanisms for regulating the carrier transportation using polaronic electron correlations.

Electronic structure evolution of single bilayer Bi(1 1 1) film on 3D topological insulator Bi2Se x Te3-x surfaces.

The electronic state evolution of single bilayer (1BL) Bi(1 1 1) deposited on three-dimensional (3D) Bi2Se x Te3-x topological insulators at x = 0, 1.26, 2, 2.46, 3 is systematically investigated by angle-resolved photoemission spectroscopy (ARPES). Our results indicate that the electronic structures of epitaxial Bi films are strongly influenced by the substrate especially the topmost sublayer near the Bi films, manifesting in two main aspects. First, the Se atoms cause a stronger charge transfer effect, which induces a giant Rashba-spin splitting, while the low electronegativity of Te atoms induces a strong hybridization at the interface. Second, the lattice strain notably modifies the band dispersion of the surface bands. Furthermore, our experimental results are elucidated by first-principles band structure calculations.

A direct Fe-O coordination at the FePc/MoO(x) interface investigated by XPS and NEXAFS spectroscopies.

Molecule-substrate interaction plays a vital role in determining the electronic structures and charge transfer properties in organic-transition metal oxides (TMOs) hybridized devices. In this work, the interactions at the FePc/MoO3 interface has been investigated in detail by using synchrotron radiation photoemission spectroscopy (SRPES) and near-edge X-ray absorption fine structure (NEXAFS) spectroscopy. Compared with the annealing of the bare MoO3 film, the FePc adsorption is found to promote the thermal reduction of the underlying MoO3 film. XPS and NEXAFS experimental results unanimously demonstrate a strong electronic coupling between FePc molecules and the MoOx (x < 3) substrate. A direct Fe-O coordination at the interface as well as an electron transfer from the molecules toward the substrate is proposed. This strong coupling is compatible with a facile electron transfer from FePc molecules toward electrode through a MoOx interlayer. The understanding of the molecule-substrate interaction at the atomic level is of significance in engineering functionalized surfaces with potential applications in nanoscience, molecular electronics and photonics.

Tailoring of polar and nonpolar ZnO planes on MgO (001) substrates through molecular beam epitaxy.

Polar and nonpolar ZnO thin films were deposited on MgO (001) substrates under different deposition parameters using oxygen plasma-assisted molecular beam epitaxy (MBE). The orientations of ZnO thin films were investigated by in situ reflection high-energy electron diffraction and ex situ X-ray diffraction (XRD). The film roughness measured by atomic force microscopy evolved as a function of substrate temperature and was correlated with the grain sizes determined by XRD. Synchrotron-based X-ray absorption spectroscopy (XAS) was performed to study the conduction band structures of the ZnO films. The fine structures of the XAS spectra, which were consistent with the results of density functional theory calculation, indicated that the polar and nonpolar ZnO films had different electronic structures. Our work suggests that it is possible to vary ZnO film structures from polar to nonpolar using the MBE growth technique and hence tailoring the electronic structures of the ZnO films.PACS: 81; 81.05.Dz; 81.15.Hi.

Charge transfer dynamics of 3,4,9,10-perylene-tetracarboxylic-dianhydride molecules on Au(111) probed by resonant photoemission spectroscopy.

Charge transfer dynamics across the lying-down 3,4,9,10-perylene-tetracarboxylic-dianhydride (PTCDA) organic semiconductor molecules on Au(111) interface has been investigated using the core-hole clock implementation of resonant photoemission spectroscopy. It is found that the charge transfer time scale at the PTCDA∕Au(111) interface is much larger than the C 1s core-hole lifetime of 6 fs, indicating weak electronic coupling between PTCDA and the gold substrate due to the absence of chemical reaction and∕or bonding.

Electronic states of a C70 monolayer on the surface of Ag(111).

We have investigated the electronic states of a C(70) monolayer on the surface of Ag(111) (1 ML C(70)/Ag(111)) using synchrotron radiation photoelectron spectroscopy and soft x-ray absorption spectroscopy techniques. The experimental data exhibit metallic properties and at least 2.6 e(-) charge transfer per C(70) molecule. The screening effect of Ag(111) on the electronic structure of C(70) is remarkable; it greatly reduces or even eliminates the on-site Hubbard energy. The work functions of the C(70) multilayer and monolayer are determined as 4.53 eV and 4.52 eV respectively. The energy levels of C(70) align with the Fermi level of the Ag(111) substrate, and the shift of the vacuum level caused by C(70) adsorption is negligible. Potassium doping indicates that 1 ML C(70)/Ag(111) can still accommodate about nine electrons and that the sample remains metallic at any doping level.

Structural change of metallofullerene: an easier thermal decomposition.

We have studied for the first time the structural change of high-purity metallofullerene (Gd@C(82)) upon heat treatment in an ultra-high vacuum system (10(-10) Torr) and examined the decomposition product through successive analysis with MS, IR, Raman, TEM, EDS and XPS. It was found that metallofullerene (Gd@C(82)) had fully collapsed at 580 °C which was lower than that for the complete destruction of C(60). The easier decomposition should be ascribed to the encapsulated metal in the carbon cage which could induce the deformation of the C-C bond. The analysis indicated that the broken metallofullerene (Gd@C(82)) became a kind of graphite-like material with a lot of defects. The Gd atoms leaked out from the carbon cage and aggregated together to form a regular arrangement.

Supercritical synthesis and characterization of SWNT-based one dimensional nanomaterials.

The present study developed a novel, fast and efficient method to synthesize one dimensional nanotube-based materials via supercritical reactions and supercritical fluids. It was proved that supercritical organic fluids were good media to take materials into the nanocavity, not only as solvents but also as reaction agents. Different kinds of metals (Ni, Cu, Ag) and fullerenes (C(60), C(70), C(78), C(84), Gd@C(82), Er@C(82), Ho@C(82), Y@C(82)) were successfully inserted into nanotubes with small diameters by this technique, with various supercritical fluids such as C(2)H(5)OH, CH(3)OH or C(6)H(5)CH(3). The filling rates were proved to be more than 90%. The high filling efficiency and the properties of the as-generated materials were characterized by TEM, Raman, EDS and XPS. In principle, this technique can be applied to construct new types of nanomaterials, if we choose the appropriate supercritical reaction and fluid in the CNTs.

An XANES study on the modification of single-walled carbon nanotubes by nitric acid.

X-ray absorption near-edge structure (XANES) spectroscopy has been applied to identify the modification process of single-walled carbon nanotubes (SWCNTs) treated by nitric acid. The carboxyl groups created by the nitric acid treatment have been found to be formed on both the carbonaceous fragments and the side walls of SWCNTs. The carbonaceous fragments could be removed by a following washing treatment with sodium hydroxide. XANES spectra indicate that carbonaceous fragments are the result of the synthesis process and/or of the nitric acid treatment. Tube walls of SWCNTs are weakly oxidized by the nitric acid treatment although, after removing carbonaceous fragments, a direct oxidation process of SWCNTs is observed. Experimental data address the removal of carbonaceous fragments on SWCNTs as an efficient method for side-wall modification of a SWCNT.

Electronic structure of C(84) film studied by photoemission measurement and first-principles calculation.

We have measured the photoemission spectra of a C(84) film (isomer mixture) with synchrotron radiation. The valence band exhibits abundant spectral features from the Fermi level to ∼18 eV binding energy. The relative intensity between the lowest binding energy feature (labeled as A) and the next lowest binding energy feature (labeled as B) oscillates distinctly within the experimental photon energy region from 21.0 to 63.0 eV. The energy levels and density of states (DOS) are calculated for the D(2d)(23)- C(84) and four D(2) symmetric (D(2)(1), D(2)(5), D(2)(21) and D(2)(22)) C(84) isomers to help us to understand the electronic structure. The experimental features and the theoretical DOS peaks have one-to-one correspondence. The number of electrons occupying the states of feature A is 12 or 13.3, depending on the different kinds of isomer mixtures. The electron occupation of feature B is 18.67 e. With the spherical symmetric approximation, features A and B can be characterized with angular momenta of 6 and 5, respectively. The angular momentum difference is the reason for the photoelectron intensity oscillations.

Switchable semiconductive property of the polyhydroxylated metallofullerene.

The temperature-sensitive property of polyhydroxylated metallofullerene film of Gd@C82(OH)x with special hydroxyl number was studied using synchrotron radiation ultraviolet photoelectron spectroscopy (UPS) and TEM techniques. From room temperature (RT) to 4 degrees C the photoelectron onset energy of the spectra of Gd@C82(OH)12 shifted from 1.9 to 0.2 eV, indicating that Gd@C82(OH)12 automatically shifted from insulator at RT to semiconductor at 4 degrees C. However, this could not be observed for Gd@C82(OH)20. TEM experiments show that the variation of conductivity can be ascribed to formation of a microcrystal under low temperature. The dipole moment induced unique intermolecular interactions and self-assembled microcrystalline structures for Gd@C82(OH)12. This may cause reconstruction of the upper valence band formed by pi-like electrons as well as the density of states (DOS) around the Fermi level (EF) and reconstruct the deeper valence band formed by sigma-like electrons, eventually resulting in a shift to a semiconducting nature. These findings revealed a novel nature for polyhydroxylated Gd@C82(OH)x materials: Their insulating properties can be controllably tuned into semiconducting ones as a function of temperature.

Tuning electronic properties of metallic atom in bondage to a nanospace.

The possibility of modulating the electronic configurations of the innermost atoms inside a nanospace, nano sheath with chemical modification was investigated using synchrotron X-ray photoelectron spectroscopy. Systems of definite nanostructures were chosen for this study. Systematic variations in energy, intensity, and width of pi and sigma O 1s core level spectra, in absorption characteristics of C 1s-->pi transition, in photoabsorption of pre-edge and resonance regions of the Gd 4d-->4f transition, were observed for Gd@C(82) (an isolated nanospace for Gd), Gd@C(82)(OH)(12) (a modified nanospace for Gd), and Gd@C(82)(OH)(22) (a differently modified nanospace for Gd), and the reference materials Gd-DTPA (a semi-closed space for Gd) and Gd(2)O(3). A sandwich-type electronic interaction along [outer modification group]-[nano sheaths]-[inner metallic atom] was observed in the molecules of modifications. This makes it possible to control electron-donation directions, either from the innermost metallic atom toward the outer nano sheaths or the reverse. The results suggest that one may effectively tune the fine structures of electronic configurations of such a metallic atom being astricted into nanostructures through changing the number or category of outer groups of chemical modifications. This may open a door to realizing the desired designs for electronic and magnetic properties of functionalized nanomaterials.