Determination of ED90s of Phenylephrine and Norepinephrine Infusion for Prevention of Spinal Anesthesia-Induced Hypotension in Patients with Preeclampsia During Cesarean Delivery.

Background: Vasopressors remain an important strategy for managing spinal anesthesia-induced hypotension in women with preeclampsia. The aim of this study was to investigate the ED90s and efficacy ratio of phenylephrine and norepinephrine in managing spinal anesthesia-induced hypotension in women with preeclampsia during cesarean delivery. Methods: 60 women with preeclampsia, who underwent cesarean delivery, were randomly assigned to receive either a continuous intravenous infusion of phenylephrine or norepinephrine following spinal anesthesia. The initial dosage of phenylephrine or norepinephrine for the first women was 0.5 or 0.05 µg/kg/min, respectively, and subsequent infusion dosages were adjusted based on their efficacy in preventing spinal anesthesia-induced hypotension (defined as a systolic blood pressure less than 80% of the baseline level). The incremental or decremental doses of phenylephrine or norepinephrine were set at 0.1 or 0.01 µg/kg/min. The primary outcomes were the ED90s and efficacy ratio of phenylephrine and norepinephrine infusions for preventing spinal anesthesia-induced hypotension prior to delivery. Results: The results obtained from isotonic regression analysis revealed that the ED90 values of the phenylephrine and norepinephrine group for preventing spinal anesthesia-induced hypotension were 0.597 (95% CI: 0.582-0.628) and 0.054 (95% CI: 0.053-0.056) µg/kg/min, respectively, with an efficacy ratio of 11.1:1. The results of Probit regression analysis revealed that the ED90 values were determined to be 0.665 (95% CI: 0.576-1.226) and 0.055 (95% CI: 0.047-0.109) µg/kg/min, respectively, with an efficacy ratio of 12.1:1. Conclusion: The administration of 0.6 µg/kg/min phenylephrine and 0.05 µg/kg/min norepinephrine has been found to effectively manage a 90% incidence of spinal anesthesia-induced hypotension in women with preeclampsia.

Detection of medically relevant volatile organic compounds with graphene field-effect transistors and separated by low-frequency spectral and time signatures.

Exhaled human breath contains a mixture of gases including nitrogen, oxygen, carbon dioxide, water vapour and low molecular weight volatile organic compounds (VOCs). Different VOCs detected in human breath condensate have been recently related to several metabolic processes occurring inside body tissues in the pathological state, as candidate biomarkers for monitoring conditions such as lung injury, airway inflammation, immunity dysfunction, infection, and cancer. Current techniques for detecting these compounds include several types of mass spectroscopy, which are highly costly, time-consuming and dependent on trained personnel for sample analysis. The need for fast and label-free biosensors is paving the way towards the design of novel and portable electronic devices for point-of-care diagnosis with VOCs such as E-noses, and based on the measurement of signal signatures derived from their chemical composition. In this paper, we propose a device for VOC detection that was tested inside a controlled gas flow setup, resorting to graphene field-effect transistors (GFETs). Electrical measurements from graphene directly exposed to nitrogen plus VOC vapours involved cyclic measurements for the variation of graphene's resistance and low-frequency spectral noise in order to obtain distinctive signatures of the tested compounds in the time and frequency domains related, respectively, to Gutmann's theory for donor-acceptor chemical species and spectral sub-band analysis.

Floating magnetic microrobots for fiber functionalization.

Because minimally invasive surgery is increasingly used to target small lesions, demand is growing for miniaturized tools-such as microcatheters, articulated microforceps, or tweezers-that incorporate sensing and actuation for precision surgery. Although existing microfabrication techniques have addressed the construction of these devices, accurate integration and functionalization of chemical and physical sensors represent major challenges. This paper presents a microrobotic platform for the functionalization of fibers of diameters from 140 to 830 micrometers, with a patterning precision of 5 micrometers and an orientation error below 0.4°. To achieve this, we developed two 2 millimeter-by-3 millimeter, 200-micrometer-thick microrobots to align floating electronic circuits on a fiber during a wet transfer process. The position and orientation of the microrobots were controlled at the air/water interface by a permanent magnet. The stiffness of the position controlled was 0.2 newton millimeter, leading to an average force of 0.5 newton. The nonhomogeneous magnetic field of the magnet, associated with different preferred magnetization directions recorded in the microrobots, allowed the distance between the two microrobots to be precisely controlled. This extra degree of freedom was used to control the microrobot pair as a tweezer to grab and release floating electronic patterns, whereas the others were used to align the pattern position and orientation with the fiber. A model of this control, as well as the microrobots' interaction through surface tension, is proposed. Detailed performance validation is provided, and various exemplar sensor embodiments on a 200-micrometer-diameter fiber and three-dimensional devices are demonstrated.

A bio-inspired 3D micro-structure for graphene-based bacteria sensing.

Nature is a great source of inspiration for the development of solutions for biomedical problems. We present a novel biosensor design utilizing two-photon polymerisation and graphene to fabricate an enhanced biosensing platform for the detection of motile bacteria. A cage comprising venous valve-inspired directional micro-structure is fabricated around graphene-based sensing electronics. The asymmetric 3D micro-structure promotes motile cells to swim from outside the cage towards the inner-most chamber, resulting in concentrated bacteria surrounding the central sensing region, thus enhancing the sensing signal. The concentrating effect is proved across a range of cell cultures - from 101 CFU/ml to 109 CFU/ml. Fluorescence analysis shows a 3.38-3.5 times enhanced signal. pH sensor presents a 2.14-3.08 times enhancement via the detection of cellar metabolite. Electrical measurements demonstrate an 8.8-26.7 times enhanced current. The proposed platform provides a new way of leveraging bio-inspired 3D printing and 2D materials for the development of sensing devices for biomedical applications.

Utilizing Interlayer Excitons in Bilayer WS2 for Increased Photovoltaic Response in Ultrathin Graphene Vertical Cross-Bar Photodetecting Tunneling Transistors.

Here we study the layer-dependent photoconductivity in Gr/WS2/Gr vertical stacked tunneling (VST) cross-bar devices made using two-dimensional (2D) materials all grown by chemical vapor deposition. The larger number of devices (>100) enables a statistically robust analysis on the comparative differences in the photovoltaic response of monolayer and bilayer WS2, which cannot be achieved in small batch devices made using mechanically exfoliated materials. We show a dramatic increase in photovoltaic response for Gr/WS2(2L)/Gr compared to monolayers because of the long inter- and intralayer exciton lifetimes and the small exciton binding energy (both interlayer and intralayer excitons) of bilayer WS2 compared with that of monolayer WS2. Different doping levels and dielectric environments of top and bottom graphene electrodes result in a potential difference across a ∼1 nm vertical device, which gives rise to large electric fields perpendicular to the WS2 layers that cause band structure modification. Our results show how precise control over layer number in all 2D VST devices dictates the photophysics and performance for photosensing applications.

High-Performance All 2D-Layered Tin Disulfide: Graphene Photodetecting Transistors with Thickness-Controlled Interface Dynamics.

Tin disulfide crystals with layered two-dimensional (2D) sheets are grown by chemical vapor deposition using a novel precursor approach and integrated into all 2D transistors with graphene (Gr) electrodes. The Gr:SnS2:Gr transistors exhibit excellent photodetector response with high detectivity and photoresponsivity. We show that the response of the all 2D photodetectors depends upon charge trapping at the interface and the Schottky barrier modulation. The thickness-dependent SnS2 measurements in devices reveal a transition from the interface-dominated response for thin crystals to bulklike response for the thicker SnS2 crystals, showing the sensitivity of devices fabricated using layered materials on the number of layers. These results show that SnS2 has photosensing performance when combined with Gr electrodes that is comparable to other 2D transition metal dichalcogenides of MoS2 and WS2.

Lateral Graphene-Contacted Vertically Stacked WS2 /MoS2 Hybrid Photodetectors with Large Gain.

A demonstration is presented of how significant improvements in all-2D photodetectors can be achieved by exploiting the type-II band alignment of vertically stacked WS2 /MoS2 semiconducting heterobilayers and finite density of states of graphene electrodes. The photoresponsivity of WS2 /MoS2 heterobilayer devices is increased by more than an order of magnitude compared to homobilayer devices and two orders of magnitude compared to monolayer devices of WS2 and MoS2 , reaching 103 A W-1 under an illumination power density of 1.7 × 102 mW cm-2 . The massive improvement in performance is due to the strong Coulomb interaction between WS2 and MoS2 layers. The efficient charge transfer at the WS2 /MoS2 heterointerface and long trapping time of photogenerated charges contribute to the observed large photoconductive gain of ≈3 × 104 . Laterally spaced graphene electrodes with vertically stacked 2D van der Waals heterostructures are employed for making high-performing ultrathin photodetectors.

Ultrathin 2D Photodetectors Utilizing Chemical Vapor Deposition Grown WS2 With Graphene Electrodes.

In this report, graphene (Gr) is used as a 2D electrode and monolayer WS2 as the active semiconductor in ultrathin photodetector devices. All of the 2D materials are grown by chemical vapor deposition (CVD) and thus pose as a viable route to scalability. The monolayer thickness of both electrode and semiconductor gives these photodetectors ∼2 nm thickness. We show that graphene is different to conventional metal (Au) electrodes due to the finite density of states from the Dirac cones of the valence and conduction bands, which enables the photoresponsivity to be modulated by electrostatic gating and light input control. We demonstrate lateral Gr-WS2-Gr photodetectors with photoresponsivities reaching 3.5 A/W under illumination power densities of 2.5 × 10(7) mW/cm(2). The performance of monolayer WS2 is compared to bilayer WS2 in photodetectors and we show that increased photoresponsivity is achieved in the thicker bilayer WS2 crystals due to increased optical absorption. This approach of incorporating graphene electrodes in lateral TMD based devices provides insights on the contact engineering in 2D optoelectronics, which is crucial for the development of high performing ultrathin photodetector arrays for versatile applications.

Doping Graphene Transistors Using Vertical Stacked Monolayer WS2 Heterostructures Grown by Chemical Vapor Deposition.

We study the interactions in graphene/WS2 two-dimensional (2D) layered vertical heterostructures with variations in the areal coverage of graphene by the WS2. All 2D materials were grown by chemical vapor deposition and transferred layer by layer. Photoluminescence (PL) spectroscopy of WS2 on graphene showed PL quenching along with an increase in the ratio of exciton/trion emission, relative to WS2 on SiO2 surface, indicating a reduction in the n-type doping levels of WS2 as well as reduced radiative recombination quantum yield. Electrical measurements of a total of 220 graphene field effect transistors with different WS2 coverage showed double-Dirac points in the field effect measurements, where one is shifted closer toward the 0 V gate neutrality position due to the WS2 coverage. Photoirradiation of the WS2 on graphene region caused further Dirac point shifts, indicative of a reduction in the p-type doping levels of graphene, revealing that the photogenerated excitons in WS2 are split across the heterostructure by electron transfer from WS2 to graphene. Kelvin probe microscopy showed that regions of graphene covered with WS2 had a smaller work function and supports the model of electron transfer from WS2 to graphene. Our results demonstrate the formation of junctions within a graphene transistor through the spatial tuning of the work function of graphene using these 2D vertical heterostructures.

Controlling sulphur precursor addition for large single crystal domains of WS2.

We show that controlling the introduction time and the amount of sulphur (S) vapour relative to the WO3 precursor during the chemical vapour deposition (CVD) growth of WS2 is critical to achieving large crystal domains on the surface of silicon wafers with a 300 nm oxide layer. We use a two furnace system that enables the S precursor to be separately heated from the WO3 precursor and growth substrate. Accurate control of the S introduction time enabled the formation of triangular WS2 domains with edges up to 370 µm which are visible to the naked eye. The WS2 domains exhibit room-temperature photoluminescence with a peak value around ∼635 nm and a full-width at half-maximum (FWHM) of ∼12 nm. Selected area electron diffraction from different regions of the triangular WS2 domains showed that they are single crystal structures.