Characteristics of O/W emulsion gels stabilized by soy protein-xanthan gum complex for plant-based processed meat products.

The aim of the present study is to characterize the mechanical properties of O/W emulsion gels stabilized through soy protein isolate (SPI)-xanthan gum (XG) complex and to elucidate their practical usefulness in plant-based processed meat products. O/W emulsions prepared by mixing aqueous solutions of SPI-XG complexes, which was formed via electrostatic interactions under acidic conditions (pH 4.0), with plant oil were gelled in the presence of several hydrocolloids. Effects of hydrocolloid composition, oil type and load, and oil droplet size on the mechanical properties of the emulsion gels were investigated by dynamic viscoelasticity measurements, and fluorescence microscopy was performed for observation of the oil droplet dispersion. Results indicated that methylcellulose should be required to provide the gels with heat resistance and that the type of oil used should affect dynamic storage modulus (G') of the gels particularly at lower temperatures. It was also found that increased oil load should decrease the gel's resistance to deformation, making the gel structure brittle, and that oil drop size should affect G' and dynamic loss modulus (G") at lower strains. Food application tests indicated that the emulsion gels used had a great impact on the mechanical properties of plant-based meat patties. These findings would contribute to the utilization of the emulsion gels as a lipid portion in plant-based processed meat products, leading to the progress of industrial practice.

Efficient full spin-orbit torque switching in a single layer of a perpendicularly magnetized single-crystalline ferromagnet.

Spin-orbit torque (SOT), which is induced by an in-plane electric current via large spin-orbit coupling, enables an innovative method of manipulating the magnetization of ferromagnets by means of current injection. In conventional SOT bilayer systems, the magnetization switching efficiency strongly depends on the interface quality and the strength of the intrinsic spin Hall Effect. Here, we demonstrate highly efficient full SOT switching achieved by applying a current in a single layer of perpendicularly magnetized ferromagnetic semiconductor GaMnAs with an extremely small current density of ∼3.4 × 105 A cm-2, which is two orders of magnitude smaller than that needed in typical metal bilayer systems. This low required current density is attributed to the intrinsic bulk inversion asymmetry of GaMnAs as well as its high-quality single crystallinity and large spin polarization. Our findings will contribute to advancements in the electrical control of magnetism and its practical application in semiconductor devices.

Large current modulation and tunneling magnetoresistance change by a side-gate electric field in a GaMnAs-based vertical spin metal-oxide-semiconductor field-effect transistor.

A vertical spin metal-oxide-semiconductor field-effect transistor (spin MOSFET) is a promising low-power device for the post scaling era. Here, using a ferromagnetic-semiconductor GaMnAs-based vertical spin MOSFET with a GaAs channel layer, we demonstrate a large drain-source current IDS modulation by a gate-source voltage VGS with a modulation ratio up to 130%, which is the largest value that has ever been reported for vertical spin field-effect transistors thus far. We find that the electric field effect on indirect tunneling via defect states in the GaAs channel layer is responsible for the large IDS modulation. This device shows a tunneling magnetoresistance (TMR) ratio up to ~7%, which is larger than that of the planar-type spin MOSFETs, indicating that IDS can be controlled by the magnetization configuration. Furthermore, we find that the TMR ratio can be modulated by VGS. This result mainly originates from the electric field modulation of the magnetic anisotropy of the GaMnAs ferromagnetic electrodes as well as the potential modulation of the nonmagnetic semiconductor GaAs channel layer. Our findings provide important progress towards high-performance vertical spin MOSFETs.

SNARE Proteins LjVAMP72a and LjVAMP72b Are Required for Root Symbiosis and Root Hair Formation in Lotus japonicus.

SNARE (soluble N-ethyl maleimide sensitive factor attachment protein receptor) proteins mediate membrane trafficking in eukaryotic cells. Both LjVAMP72a and LjVAMP72b are members of R-SNARE and belong to a symbiotic subgroup of VAMP72 in Lotus japonicus. Their sequences are closely related and both were induced in the root upon rhizobial inoculation. The expression level of LjVAMP72a in the nodules was higher than in the leaves or roots; however, LjVMAP72b was expressed constitutively in the leaves, roots, and nodules. Immunoblot analysis showed that not only LjVAMP72a but also LjVAMP72b were accumulated in a symbiosome-enriched fraction, suggesting its localization in the symbiosome membrane during nodulation. Since there was 89% similarity between LjVAMP72a and LjVAMP72b, knockdown mutant by RNAi suppressed both genes. The suppression of both genes impaired root nodule symbiosis (RNS). The number of bacteroids and the nitrogen fixation activity were severely curtailed in the nodules formed on knockdown roots (RNAi-LjVAMP72a/72b). Arbuscular mycorrhization (AM) was also attenuated in knockdown roots, indicating that LjVAMP72a and LjVAMP72b were required to establish not only RNS but also AM. In addition, transgenic hairy roots of RNAi-LjVAMP72a/72b suppressed the elongation of root hairs without infections by rhizobia or arbuscular mycorrhizal fungi. Amino acid alignment showed the symbiotic subclade of VAMP72s containing LjVAMP72a and LjVAMP72b were a conserved six amino acid region (HHQAQD) within the SNARE motif. Taken together, our data suggested that LjVAMP72a and LjVAMP72b positively controlled both symbioses and root hair formation by affecting the secretory pathway.