Highly passivated TOPCon bottom cells for perovskite/silicon tandem solar cells.

Tunnel oxide passivated contact (TOPCon) silicon solar cells are rising as a competitive photovoltaic technology, seamlessly blending high efficiency with cost-effectiveness and mass production capabilities. However, the numerous defects from the fragile silicon oxide/c-Si interface and the low field-effect passivation due to the inadequate boron in-diffusion in p-type polycrystalline silicon (poly-Si) passivated contact reduce their open-circuit voltages (VOCs), impeding their widespread application in the promising perovskite/silicon tandem solar cells (TSCs) that hold a potential to break 30% module efficiency. To address this, we have developed a highly passivated p-type TOPCon structure by optimizing the oxidation conditions, boron in-diffusion, and aluminium oxide hydrogenation, thus pronouncedly improving the implied VOC (iVOC) of symmetric samples with p-type TOPCon structures on both sides to 715 mV and the VOC of completed double-sided TOPCon bottom cells to 710 mV. Consequently, integrating with perovskite top cells, our proof of concept of 1 cm2 n-i-p perovskite/silicon TSCs exhibit VOCs exceeding 1.9 V and a high efficiency of 28.20% (certified 27.3%), which paves a way for TOPCon cells in the commercialization of future tandems.

Anomalous Electroluminescence Characteristics of Perovskite Modules.

Spatially resolved photoluminescence (PL) and electroluminescence (EL) imaging technologies play a crucial role in evaluating the performance and stability of photovoltaic devices. However, their application in perovskite devices presents unique challenges. In this study, we report a discrepancy between the electrical performance of perovskite solar modules (PSMs) and the EL images. Following the application of a reverse bias voltage, we observed an increase in EL brightness associated with prolonged carrier lifetime and transport length. Furthermore, cross-sectional Kelvin probe force microscopy identified a significant potential increase primarily at the electron-transport layer (ETL) side after reverse bias, suggesting the presence of defective ETL/perovskite interfaces with filled hole traps. To address this EL mismatch, we proposed a mild reverse current recovery method aimed at aligning EL images with the cell performance without compromising device efficiency. This approach effectively mitigates discrepancies, ensuring alignment between the device performance and EL imaging. Our study underscores that caution is required when utilizing EL imaging to monitor spatial homogeneity in PSMs for future industrial production.

Towards the 10-Year Milestone of Monolithic Perovskite/Silicon Tandem Solar Cells.

The perovskite/silicon tandem solar cell represents one of the most promising avenues for exceeding the Shockley-Queisser limit for single-junction solar cells at a reasonable cost. Remarkably, its efficiency has rapidly increased from 13.7% in 2015 to 34.6% in 2024. Despite the significant research efforts dedicated to this topic, the "secret" to achieving high-performance perovskite/silicon tandem solar cells seems to be confined to a few research groups. Additionally, the discrepancies in preparation and characterization between single-junction and tandem solar cells continue to impede the transition from efficient single-junction to efficient tandem solar cells. This review first revisits the key milestones in the development of monolithic perovskite/silicon tandem solar cells over the past decade. Then, a comprehensive analysis of the background, advancements, and challenges in perovskite/silicon tandem solar cells is provided, following the sequence of the tandem fabrication process. The progress and limitations of the prevalent stability measurements for tandem devices are also discussed. Finally, a roadmap for designing efficient, scalable, and stable perovskite/silicon tandem solar cells is outlined. This review takes the growth history into consideration while charting the future course of perovskite/silicon tandem research.

Influence of Hole Transport Layers on Buried Interface in Wide-Bandgap Perovskite Phase Segregation.

Light-induced phase segregation, particularly when incorporating bromine to widen the bandgap, presents significant challenges to the stability and commercialization of perovskite solar cells. This study explores the influence of hole transport layers, specifically poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine (PTAA) and [4-(3,6-dimethyl-9H-carbazol-9-yl)butyl]phosphonic acid (Me-4PACz), on the dynamics of phase segregation. Through detailed characterization of the buried interface, we demonstrate that Me-4PACz enhances perovskite photostability, surpassing the performance of PTAA. Nanoscale analyses using in situ Kelvin probe force microscopy and quantitative nanomechanical mapping techniques elucidate defect distribution at the buried interface during phase segregation, highlighting the critical role of substrate wettability in perovskite growth and interface integrity. The integration of these characterization techniques provides a thorough understanding of the impact of the buried bottom interface on perovskite growth and phase segregation.

Protection of Si Nanowires against Aß Toxicity by the Inhibition of Aß Aggregation.

Alzheimer's disease (AD) is a progressive neurodegenerative disease characterized by the accumulation of amyloid beta (Aß) plaques in the brain. Aß1-42 is the main component of Aß plaque, which is toxic to neuronal cells. Si nanowires (Si NWs) have the advantages of small particle size, high specific surface area, and good biocompatibility, and have potential application prospects in suppressing Aß aggregation. In this study, we employed the vapor-liquid-solid (VLS) growth mechanism to grow Si NWs using Au nanoparticles as catalysts in a plasma-enhanced chemical vapor deposition (PECVD) system. Subsequently, these Si NWs were transferred to a phosphoric acid buffer solution (PBS). We found that Si NWs significantly reduced cell death in PC12 cells (rat adrenal pheochromocytoma cells) induced by Aß1-42 oligomers via double staining with 3-(4,5-dimethylthiazol-2-yl)-2,5-diphenyltetrazolium bromide (MTT) and fluorescein diacetate/propyl iodide (FDA/PI). Most importantly, pre-incubated Si NWs largely prevented Aß1-42 oligomer-induced PC12 cell death, suggesting that Si NWs exerts an anti-Aß neuroprotective effect by inhibiting Aß aggregation. The analysis of Fourier Transform Infrared (FTIR) results demonstrates that Si NWs reduce the toxicity of fibrils and oligomers by intervening in the formation of ß-sheet structures, thereby protecting the viability of nerve cells. Our findings suggest that Si NWs may be a potential therapeutic agent for AD by protecting neuronal cells from the toxicity of Aß1-42.

Ultrathin (∼30 µm) flexible monolithic perovskite/silicon tandem solar cell.

The efficiency of rigid perovskite/silicon tandem solar cells has reached 33.9%. However, there has been no report on flexible perovskite/silicon tandem solar cells due to the challenge of overcoming the poor light absorption of ultrathin silicon bottom cells while maintaining their mechanical flexibility. Herein, we report the first demonstration of the perovskite/silicon tandem solar cell based on flexible ultrathin silicon. We show that reducing the wafer thicknesses and feature sizes of the light-trapping textures can significantly improve the flexibility of silicon without sacrificing light utilization. In addition, the capping of the perovskite top cells can further improve the device's mechanical durability by shifting the neutral plane toward the silicon surface that is prone to fracture. Finally, the resulting ultrathin (∼30 µm) flexible perovskite/silicon tandem solar cell achieves a certified stabilized efficiency of 22.8% with an extremely high power-to-weight ratio of 3.12 W g-1. Moreover, the flexible tandems exhibit remarkable bending durability, maintaining 98.2% of their initial performance after 3000 bending cycles at a radius of only 1 cm.

Self-powered MSM solar-blind AlGaN photodetector realized by in-plane polarization modulation.

Solid-state self-powered UV detection is strongly required in various application fields to enable long-term operation. However, this requirement is incompatible with conventionally used metal-semiconductor-metal (MSM) UV photodetectors (PDs) due to the symmetric design of Schottky contacts. In this work, a self-powered MSM solar-blind UV-PD was realized using a lateral pn junction architecture. A large built-in electric field was obtained in the MSM-type UV-PD without impurity doping, leading to efficiency carrier separation and enhanced photoresponsivity at zero external bias. The solar-blind UV-PD exhibits a cutoff wavelength of 280 nm, a photo/dark current ratio of over 105, and a responsivity of 425.13 mA/W at -10 V. The mechanism of self-powered UV photodetection was further investigated by TCAD simulation of the internal electric field and carrier distributions.

Novel polysilicon in resisting thermal-evaporation Al-electrode damage and its application in back-junction passivated contact p-type solar cells.

In preparing tunnel oxygen passivation contact (TOPCon) solar cells, the metallization process often causes damage to passivation performance. Aiming to solve the issue, we investigated the advantages of the novel polysilicon, i.e. the carbon (C) or nitrogen (N) doped polysilicon, in resisting metallization damage. Our study reveals that C- or N-doped polysilicon does mitigate the passivation damage caused by the physical-vapor deposition metallization processes, i.e. the decrease in implied open-circuit voltage (iVoc) and the increase in recombination current (J0) are both suppressed. For the novel polysilicon samples suffered metallization, the decrease ofiVocwas only ∼-1 mV, and the increase ofJ0< 1 fA cm-2; in contrast, the decrease ofiVocof the standard polysilicon samples was -7 mV, and the increase ofJ0was ∼6 fA cm-2. In addition, we also explored the difference between the finger-metal and the full-metal metallization, showing that the finger-metal has less passivation damage due to the smaller contact area. However, the free energy loss analysis indicates that the advantage of the novel polysilicon in resisting metallization damage is overshadowed by the disadvantage of the higher contact resistivity when finger-metal electrodes are used. Numerical simulations prove that the efficiency of the solar cell with novel polysilicon still shows >0.2% absolute efficiency higher than that with the standard polysilicon, reaching 26% when full-metal electrodes by thermal evaporation.

Regionalizing Nitrogen Doping of Polysilicon Films Enabling High-Efficiency Tunnel Oxide Passivating Contact Silicon Solar Cells.

Tunnel oxide passivating contact (TOPCon) solar cells (SCs) as one of the most competitive crystalline silicon (c-Si) technologies for the TW-scaled photovoltaic (PV) market require higher passivation performance to further improve their device efficiencies. Here, the successful construction of a double-layered polycrystalline silicon (poly-Si) TOPCon structure is reported using an in situ nitrogen (N)-doped poly-Si covered by a normal poly-Si, which achieves excellent passivation and contact properties simultaneously. The new design exhibits the highest implied open-circuit voltage of 755 mV and the lowest single-sided recombination current density (J0 ) of ≈0.7 fA cm⁻2 for a TOPCon structure and a low contact resistivity of less than 5 mΩ·cm2 , resulting in a high selectivity factor of ≈16. The mechanisms of passivation improvement are disclosed, which suggest that the introduction of N atoms into poly-Si restrains H overflow by forming stronger Si-N and N-H bonds, reduces interfacial defects, and induces favorable energy bending. Proof-of-concept TOPCon SCs with such a design receive a remarkable certified efficiency of 25.53%.

Visualizing Interfacial Energy Offset and Defects in Efficient 2D/3D Heterojunction Perovskite Solar Cells and Modules.

Currently, the full potential of perovskite solar cells (PSCs) is limited by chargecarrier recombination owing to imperfect passivation methods. Here, the recombination loss mechanisms owing to the interfacial energy offset and defects are quantified. The results show that a favorable energy offset can reduce minority carriers and suppress interfacial recombination losses more effectively than chemical passivation. To obtain high-efficiency PSCs, 2D perovskites are promising candidates, which offer powerful field effects and require only modest chemical passivation at the interface. The enhanced passivation and charge-carrier extraction offered by the 2D/3D heterojunction PSCs has boosted their power conversion efficiency to 25.32% (certified 25.04%) for small-size devices and to 21.48% for a large-area module (with a designated area of 29.0 cm2 ). Ion migration is also suppressed by the 2D/3D heterojunction, such that the unencapsulated small-size devices maintain 90% of their initial efficiency after 2000 h of continuous operation at the maximum power point.

Surface Reconstruction for Efficient and Stable Monolithic Perovskite/Silicon Tandem Solar Cells with Greatly Suppressed Residual Strain.

Despite the swift rise in power conversion efficiency (PCE) to more than 32%, the instability of perovskite/silicon tandem solar cells is still one of the key obstacles to practical application and is closely related to the residual strain of perovskite films. Herein, a simple surface reconstruction strategy is developed to achieve a global incorporation of butylammonium cations at both surface and bulk grain boundaries by post-treating perovskite films with a mixture of N,N-dimethylformamide and n-butylammonium iodide in isopropanol solvent, enabling strain-free perovskite films with simultaneously reduced defect density, suppressed ion migration, and improved energy level alignment. As a result, the corresponding single-junction perovskite solar cells yield a champion PCE of 21.8%, while maintaining 100% and 81% of their initial PCEs without encapsulation after storage for over 2500 h in N2 and 1800 h in air, respectively. Remarkably, a certified stabilized PCE of 29.0% for the monolithic perovskite/silicon tandems based on tunnel oxide passivated contacts is further demonstrated. The unencapsulated tandem device retains 86.6% of its initial performance after 306 h at maximum power point (MPP) tracking under continuous xenon-lamp illumination without filtering ultraviolet light (in air, 20-35 °C, 25-75%RH, most often ≈60%RH).

Long-chain anionic surfactants enabling stable perovskite/silicon tandems with greatly suppressed stress corrosion.

Despite the remarkable rise in the efficiency of perovskite-based solar cells, the stress-induced intrinsic instability of perovskite active layers is widely identified as a critical hurdle for upcoming commercialization. Herein, a long-alkyl-chain anionic surfactant additive is introduced to chemically ameliorate the perovskite crystallization kinetics via surface segregation and micellization, and physically construct a glue-like scaffold to eliminate the residual stresses. As a result, benefiting from the reduced defects, suppressed ion migration and improved energy level alignment, the corresponding unencapsulated perovskite single-junction and perovskite/silicon tandem devices exhibit impressive operational stability with 85.7% and 93.6% of their performance after 3000 h and 450 h at maximum power point tracking under continuous light illumination, providing one of the best stabilities to date under similar test conditions, respectively.

Directional Carrier Transport in Micrometer-Thick Gallium Oxide Films for High-Performance Deep-Ultraviolet Photodetection.

Incorporating emerging ultrawide bandgap semiconductors with a metal-semiconductor-metal (MSM) architecture is highly desired for deep-ultraviolet (DUV) photodetection. However, synthesis-induced defects in semiconductors complicate the rational design of MSM DUV photodetectors due to their dual role as carrier donors and trap centers, leading to a commonly observed trade-off between responsivity and response time. Here, we demonstrate a simultaneous improvement of these two parameters in ε-Ga2O3 MSM photodetectors by establishing a low-defect diffusion barrier for directional carrier transport. Specifically, using a micrometer thickness far exceeding its effective light absorption depth, the ε-Ga2O3 MSM photodetector achieves over 18-fold enhancement of responsivity and simultaneous reduction of the response time, which exhibits a state-of-the-art photo-to-dark current ratio near 108, a superior responsivity of >1300 A/W, an ultrahigh detectivity of >1016 Jones, and a decay time of 123 ms. Combined depth-profile spectroscopic and microscopic analysis reveals the existence of a broad defective region near the lattice-mismatched interface followed by a more defect-free dark region, while the latter one serves as a diffusion barrier to assist frontward carrier transport for substantially enhancing the photodetector performance. This work reveals the critical role of the semiconductor defect profile in tuning carrier transport for fabricating high-performance MSM DUV photodetectors.

Additive Engineering of the CuSCN Hole Transport Layer for High-Performance Perovskite Semitransparent Solar Cells.

CuSCN has been widely considered a promising candidate for low-cost and high-stable hole transport material in perovskite semitransparent solar cells (STSCs). However, the low conductivity of the solution-processed CuSCN hole transport layer (HTL) hinders the hole extraction and transport in devices, which makes it hard to achieve devices with high performance. Herein, we report a facile additive engineering approach to optimize the p conductivity of CuSCN HTLs in perovskite STSCs. The n-butylammonium iodide additive facilitates the formation of Cu2+ and generates more Cu vacancies in the CuSCN HTL. This realizes a significant enhancement of the hole concentration and p conductivity of the film. Moreover, the additive improves the solubility of the CuSCN precursor solution and results in a uniform coverage on the perovskite active layer. Therefore, the perovskite STSC with a high power conversion efficiency (PCE) of 19.24% has been achieved, which is higher than that of the spiro-OMeTAD (18.83%) and CuSCN (17.45%) counterparts. In addition, the unencapsulated CuSCN-based device retains 87.5% of the initial PCE after 20 days in the ambient atmosphere.

50-µm thick flexible dopant-free interdigitated-back-contact silicon heterojunction solar cells with front MoOx coatings for efficient antireflection and passivation.

We demonstrate experimentally a flexible crystalline silicon (c-Si) solar cell (SC) based on dopant-free interdigitated back contacts (IBCs) with thickness of merely 50 µm for, to the best of our knowledge, the first time. A MoOx thin film is proposed to cover the front surface and the power conversion efficiency (PCE) is boosted to over triple that of the uncoated SC. Compared with the four-time thicker SC, our thin SC is still over 77% efficient. Systematic studies show the front MoOx film functions for both antireflection and passivation, contributing to the excellent performance. A double-interlayer (instead of a previously-reported single interlayer) is identified at the MoOx/c-Si interface, leading to efficient chemical passivation. Meanwhile, due to the large workfunction difference, underneath the interface a strong built-in electric field is generated, which intensifies the electric field over the entire c-Si active layer, especially in the 50-µm thick layer. Photocarriers are expelled quickly to the back contacts with less recombined and more extracted. Besides, our thin IBC SC is highly flexible. When bent to a radius of 6 mm, its PCE is still 76.6% of that of the unbent cell. Fabricated with low-temperature and doping-free processes, our thin SCs are promising as cost-effective, light-weight and flexible power sources.

Tuning oxygen vacancies in epitaxial LaInO3 films for ultraviolet photodetection.

LaInO3 (LIO) represents a new, to the best of knowledge, type of perovskite oxides for deep-ultraviolet (DUV) photodetection owing to the wide bandgap nature (∼5.0 eV) and the higher tolerance of defect engineering for tunable carrier transport. Here we fabricate fast-response DUV photodetectors based on epitaxial LIO thin films and demonstrate an effective strategy for balancing the photodetector performance using the oxygen growth pressure as a simple control parameter. Increasing the oxygen pressure is effective to suppress the oxygen vacancy formation in LIO, which is beneficial to suppress the dark current and enhance the response speed. The optimized LIO photodetector achieves a fast rise/fall time of 20 ms/73 ms, a low dark current of 2.0 × 10-12 A, a photo-to-dark current ratio of 1.2 × 103, and a detectivity of 6 × 1012 Jones.

Coupled Investigation of Contact Potential and Microstructure Evolution of Ultra-Thin AlOx for Crystalline Si Passivation.

In this work, we report the same trends for the contact potential difference measured by Kelvin probe force microscopy and the effective carrier lifetime on crystalline silicon (c-Si) wafers passivated by AlOx layers of different thicknesses and submitted to annealing under various conditions. The changes in contact potential difference values and in the effective carrier lifetimes of the wafers are discussed in view of structural changes of the c-Si/SiO2/AlOx interface thanks to high resolution transmission electron microscopy. Indeed, we observed the presence of a crystalline silicon oxide interfacial layer in as-deposited (200 °C) AlOx, and a phase transformation from crystalline to amorphous silicon oxide when they were annealed in vacuum at 300 °C.

Self-powered ultraviolet MSM photodetectors with high responsivity enabled by a lateral n+/n- homojunction from opposite polarity domains.

We report a GaN-based self-powered metal-semiconductor-metal (MSM)-type ultraviolet (UV) photodetector (PD) by employing a "lateral polarity structure (LPS)" grown on the sapphire substrate. An in-plane internal electric field and different Schottky barrier heights at a metal/semiconductor interface lead to efficient carrier separation and self-powered UV detection. A dark current of 6.8nA/cm2 and detectivity of 1.0×1012 Jones were obtained without applied bias. A high photo-to-dark current ratio of 1.2×104 and peak responsivity of 933.7 mA/W were achieved for the lateral polarity structure-photodetector (LPS-PD) under -10V. The enhanced performance of the LPS-PD was ascribed to the polarization-induced carrier separation as demonstrated by the lateral band diagram.

Light-Promoted Electrostatic Adsorption of High-Density Lewis Base Monolayers as Passivating Electron-Selective Contacts.

Achieving efficient passivating carrier-selective contacts (PCSCs) plays a critical role in high-performance photovoltaic devices. However, it is still challenging to achieve both an efficient carrier selectivity and high-level passivation in a sole interlayer due to the thickness dependence of contact resistivity and passivation quality. Herein, a light-promoted adsorption method is demonstrated to establish high-density Lewis base polyethylenimine (PEI) monolayers as promising PCSCs. The promoted adsorption is attributed to the enhanced electrostatic interaction between PEI and semiconductor induced by the photo-generated carriers. The derived angstrom-scale PEI monolayer is demonstrated to simultaneously provide a low-resistance electrical contact for electrons, a high-level field-effect passivation to semiconductor surface and an enhanced interfacial dipole formation at contact interface. By implementing this light-promoted adsorbed PEI as a single-layered PCSC for n-type silicon solar cell, an efficiency of 19.5% with an open-circuit voltage of 0.641 V and a high fill factor of 80.7% is achieved, which is one of the best results for devices with solution-processed electron-selective contacts. This work not only demonstrates a generic method to develop efficient PCSCs for solar cells but also provides a convenient strategy for the deposition of highly uniform, dense, and ultra-thin coatings for diverse applications.

On the Luminescence Properties and Surface Passivation Mechanism of III- and N-Polar Nanopillar Ultraviolet Multiple-Quantum-Well Light Emitting Diodes.

The non-centrosymmetricity of III-nitride wurtzite crystals enables metal or nitrogen polarity with dramatically different surface energies and optical properties. In this work, III-polar and N-polar nanostructured ultraviolet multiple quantum wells (UV-MQWs) were fabricated by nanosphere lithography and reactive ion etching. The influence of KOH etching and rapid thermal annealing treatments on the luminescence behaviors were carefully investigated, showing a maximum enhancement factor of 2.4 in emission intensity for III-polar nanopillars, but no significant improvement for N-polar nanopillars. The discrepancy in optical behaviors between III- and N-polar nanopillar MQWs stems from carrier localization in III-polar surface, as indium compositional inhomogeneity is discovered by cathodoluminescence mapping, and a defect-insensitive emission property is observed. Therefore, non-radiative recombination centers such as threading dislocations or point defects are unlikely to influence the optical property even after post-fabrication surface treatment. This work lays solid foundation for future study on the effects of surface treatment on III- and N-polar nanostructured light-emitting-diodes and provides a promising route for the design of nanostructure photonic devices.