Detalhe da pesquisa
1.
Quantum dots derived from two-dimensional transition metal dichalcogenides: synthesis, optical properties and optoelectronic applications.
Nanotechnology
; 34(48)2023 Sep 11.
Artigo
em Inglês
| MEDLINE | ID: mdl-37607498
2.
UVA light-emitting diode grown on Si substrate with enhanced electron and hole injections.
Opt Lett
; 42(21): 4533-4536, 2017 Nov 01.
Artigo
em Inglês
| MEDLINE | ID: mdl-29088206
3.
Enhanced power conversion efficiency in InGaN-based solar cells via graded composition multiple quantum wells.
Opt Express
; 23(24): A1434-41, 2015 Nov 30.
Artigo
em Inglês
| MEDLINE | ID: mdl-26698792
4.
Hole injection and electron overflow improvement in InGaN/GaN light-emitting diodes by a tapered AlGaN electron blocking layer.
Opt Express
; 22(1): 463-9, 2014 Jan 13.
Artigo
em Inglês
| MEDLINE | ID: mdl-24515006
5.
High efficiency GaN-based light-emitting diodes with embedded air voids/SiO2 nanomasks.
Nanotechnology
; 23(4): 045303, 2012 Feb 03.
Artigo
em Inglês
| MEDLINE | ID: mdl-22222308
6.
Camphor-Based CVD Bilayer Graphene/Si Heterostructures for Self-Powered and Broadband Photodetection.
Micromachines (Basel)
; 11(9)2020 Aug 27.
Artigo
em Inglês
| MEDLINE | ID: mdl-32867054
7.
Design, Modeling, and Fabrication of High-Speed VCSEL with Data Rate up to 50 Gb/s.
Nanoscale Res Lett
; 14(1): 276, 2019 Aug 14.
Artigo
em Inglês
| MEDLINE | ID: mdl-31414236
8.
Tunnel injection from WS2 quantum dots to InGaN/GaN quantum wells.
RSC Adv
; 8(28): 15399-15404, 2018 Apr 23.
Artigo
em Inglês
| MEDLINE | ID: mdl-35539464
9.
Correction: Tunnel injection from WS2 quantum dots to InGaN/GaN quantum wells.
RSC Adv
; 8(30): 16419, 2018 May 03.
Artigo
em Inglês
| MEDLINE | ID: mdl-35543883
10.
Enhanced Performance of GaN-based Ultraviolet Light Emitting Diodes by Photon Recycling Using Graphene Quantum Dots.
Sci Rep
; 7(1): 7108, 2017 08 02.
Artigo
em Inglês
| MEDLINE | ID: mdl-28769094
11.
Efficiency improvement of GaN-based ultraviolet light-emitting diodes with reactive plasma deposited AlN nucleation layer on patterned sapphire substrate.
Nanoscale Res Lett
; 9(1): 505, 2014.
Artigo
em Inglês
| MEDLINE | ID: mdl-25258616
12.
The effect of free-standing GaN substrate on carrier localization in ultraviolet InGaN light-emitting diodes.
Nanoscale Res Lett
; 9(1): 2418, 2014 Dec.
Artigo
em Inglês
| MEDLINE | ID: mdl-26088993
13.
Effect of the surface-plasmon-exciton coupling and charge transfer process on the photoluminescence of metal-semiconductor nanostructures.
Nanoscale
; 5(10): 4436-42, 2013 May 21.
Artigo
em Inglês
| MEDLINE | ID: mdl-23579445