Generative Adversarial Network-Based Fault Detection in Semiconductor Equipment with Class-Imbalanced Data.

This research proposes an application of generative adversarial networks (GANs) to solve the class imbalance problem in the fault detection and classification study of a plasma etching process. Small changes in the equipment part condition of the plasma equipment may cause an equipment fault, resulting in a process anomaly. Thus, fault detection in the semiconductor process is essential for success in advanced process control. Two datasets that assume faults of the mass flow controller (MFC) in equipment components were acquired using optical emission spectroscopy (OES) in the plasma etching process of a silicon trench: The abnormal process changed by the MFC is assumed to be faults, and the minority class of Case 1 is the normal class, and that of Case 2 is the abnormal class. In each case, additional minority class data were generated using GANs to compensate for the degradation of model training due to class-imbalanced data. Comparisons of five existing fault detection algorithms with the augmented datasets showed improved modeling performances. Generating a dataset for the minority group using GANs is beneficial for class imbalance problems of OES datasets in fault detection for the semiconductor plasma equipment.

Performance Evaluation of RF Generators with In-Situ Plasma Process Monitoring Sensors.

Plasma-processing equipment consists of numerous components, and RF power delivery system is one of the most critical for maintaining the requisite wafer quality. In this research, we investigate the use of In-Situ plasma process monitoring sensors to evaluate the performance of the RF generator used in plasma enhanced chemical vapor deposition (PECVD) equipment. We employ three kinds of In-Situ plasma process monitoring sensors, optical emission spectroscopy (OES), an optical plasma-monitoring sensor (OPMS), and a voltage-current (VI) probe, to monitor the plasma conditions produced by three different RF generators (RFGs). We found no significant differences among the test wafers. Thus, we conclude that the three RFGs each perform similarly in the PECVD system. We also found the OES is useful for analyzing the plasma chemistry and the degree of dissociation and ionization, the OPMS to be useful for monitoring the long-term stability in plasma processing, and the VI probe to be helpful for detecting instantaneous faults in semiconductor manufacturing.

Analysis of Optical Plasma Monitoring in Plasma-Enhanced Atomic Layer Deposition Process of Al2O3.

A noninvasive, optical plasma monitoring method in plasma-enhanced atomic layer deposition (PEALD) process for nanoscale water vapor barrier film is presented. Any equipment malfunction, as well as a deviation in the condition of individual components can easily jeopardize the process result. Al2O3 deposition process was employed in this research as a test vehicle, and high-speed optical plasma monitoring was demonstrated. It is shown that optical plasma monitoring is useful for not only measuring plasma pulses in real time, but also for the detection of any variation in plasma condition which enables inferring plasma dynamics for advanced process control in nanoscale thin film deposition process.

Optimizing Binding Site Spacing in Fluidic Self-Assembly for Enhanced Microchip Integration Density.

This manuscript presents a comprehensive study on the assembly of microchips using fluidic self-assembly (FSA) technology, with a focus on optimizing the spacing between binding sites to improve yield and assembly. Through a series of experiments, we explored the assembly of microchips on substrates with varying binding site spacings, revealing the impact of spacing on the rate of undesired chip assembly across multiple sites. Our findings indicate a significant reduction in incorrect assembly rates as the spacing increases beyond a critical threshold of 140 µm. This study delves into the mechanics of chip alignment within the fluid medium, hypothesizing that the extent of the alloy's grip on the chips at different spacings influences assembly outcomes. By analyzing cases of undesired assembly, we identified the relationship between binding site spacing and the area of chip contact, demonstrating a decrease in the combined left and right areas of chips as the spacing increases. The results highlight a critical spacing threshold, which, when optimized, could significantly enhance the efficiency and precision of microchip assembly processes using FSA technology. This research contributes to the field of microcomponent assembly, offering insights into achieving higher integration densities and precision in applications, such as microLED displays and augmented reality (AR) devices.

Surface Analysis of Amorphous Carbon Thin Film for Etch Hard Mask.

When the aspect ratio of a high aspect ratio (HAR) etching process is greatly increased, an amorphous carbon layer (ACL) hard mask is required for dynamic random-access memory (DRAM). To improve the durability of an etch hard mask, an understanding of the plasma deposition mechanisms and the deposited film properties associated with the plasma conditions and atomic structure, respectively, is required. We performed a series of plasma depositions, material characterizations and dry-etching to investigate the effect of the deposition process condition on the surface characteristics of an ACL film to be used as a dry etch hard mask in an HAR etch process. We found that a lower chamber pressure at a higher temperature for the plasma deposition process yielded higher film hardness, and this infers that higher plasma ion energy in lower pressure regions helps to remove hydrogen atoms from the surface by increased ion bombardment. It was postulated that a higher substrate temperature gears the bake-out of hydrogen or hydroxide contaminants. From the results of inductively coupled plasma-reactive ion etching of the deposited ACL film, we observed that the etch selectivity over the silicon dioxide film was improved as C═C sp2 and C-C sp3 bonds increased.

Surface Analysis of TMCTS-Based SiOC(H) Low-k Dielectrics in Post-Etch Strip of ACL Hardmask.

The miniaturization of devices requires the introduction of a high aspect ratio through patterning in the Damascene copper interconnect process. The high aspect ratio etch process employs hardmasks, such as amorphous carbon, that can withstand high-powered plasma exposure. When an etch hardmask is removed after patterning, the properties of the underlying film can be altered by the effect of plasma exposure during the strip process. In this study, surface properties of SiOC(H) are investigated after an amorphous carbon strip with O2/Ar plasma. Since the low-k film of SiOC(H) structure shows characteristics according to the Si-O internal bonding structure, the Si-O bonding ratio of the ring, network and cage structure was analyzed through Fourier-transform infrared (FT-IR) analysis to measure changes in thin film properties. X-ray photoelectron spectroscopy (XPS) was also used to add reliability to the SiOC(H) film structure. In addition, the end point of the strip process was obtained using an optical emission spectroscopy sensor and variations in thin film characteristics over the plasma exposure time were analyzed. These results revealed the structural modification of the SiCO(H) thin film in the post-etch strip of the amorphous carbon layer (ACL) hardmask.