High-quality lateral monolayer-multilayer graphene junction formed by selective laser thinning for self-powered photodetection.

The formation of an asymmetric junction is key to graphene-based photodetectors of high-sensitive photodetectability, because such a junction can not only facilitate the diffusion or drift of photogenerated carriers but also realize a self-powered operation. Here, a monolayer-multilayer graphene junction photodetector is accomplished by selectively thinning part of a multilayer graphene to a high-quality monolayer. Benefiting from the large photoabsorption cross section of multilayer graphene and strong asymmetry caused by the significant differences in optoelectronic properties between monolayer and multilayer graphene, the monolayer-multilayer graphene junction shows a 7-fold increase in short-circuit photocurrent as compared with that at the monolayer graphene-metal contact in scanning photocurrent images. The asymmetric configuration also enables the photodetector to work at zero bias with minimized dark current noise and stand-by power consumption. Under global illumination with visible light, a photoswitching ratio of 3.4 × 103, a responsivity of 8.8 mA W-1, a specific detectivity of 1.3 × 108Jones and a response time of 11 ns can be obtained, suggesting a promising photoresponse. Moreover, it is worth mentioning that such a performance enhancement is achieved without compromising the broadband spectral response of graphene photodetector and it is hence applicable for long wavelength spectral range including infrared and terahertz.

Sm, Nd doped BiFeO3epitaxial film for photodetector with extremely large on-off current ratio.

BiFeO3is one of the star materials in the field of ferroelectric photovoltaic for its relatively narrow bandgap (2.2-2.7 eV) and better visible light absorption. However, a high temperature over 600 °C is indispensable in the usual BiFeO3growth process, which may lead to impure phase, interdiffusion of components near the interface, oxygen vacancy and ferrous iron ions, which will result in large leakage current and greatly aggravate the ferroelectricity and photoelectric response. Here we prepared Sm, Nd doped epitaxial BiFeO3film via a rapid microwave assisted hydrothermal process at low temperature. The Bi0.9Sm0.5Nd0.5FeO3film exhibits narrow bandgap (1.35 eV) and photo response to red light, the on-off current ratio reaches over 105. The decrease in band gap and +2/+3 variable element doping are responsible for the excellent photo response. The excellent photo response performances are much better than any previously reported BiFeO3films, which has great potential for applications in photodetection, ferroelectric photovoltaic and optoelectronic devices.

A Programmable Ambient Light Sensor with Dark Current Compensation and Wide Dynamic Range.

Ambient light sensors are becoming increasingly popular due to their effectiveness in extending the battery life of portable electronic devices. However, conventional ambient light sensors are large in area and small in dynamic range, and they do not take into account the effects caused due to a dark current. To address the above problems, a programmable ambient light sensor with dark current compensation and a wide dynamic range is proposed in this paper. The proposed ambient light sensor exhibits a low current power consumption of only 7.7 µA in dark environments, and it operates across a wide voltage range (2-5 V) and temperature range (-40-80 °C). It senses ambient light and provides an output current proportional to the ambient light intensity, with built-in dark current compensation to effectively suppress the effects of a dark current. It provides a wide dynamic range over the entire operating temperature range with three selectable output-current gain modes. The proposed ambient light sensor was designed and fabricated using a 0.18 µm standard CMOS process, and the effective area of the chip is 663 µm × 652 µm. The effectiveness of the circuit was verified through testing, making it highly suitable for portable electronic products and fluorescent fiber-optic temperature sensors.

Construction of a High-Temperature Sensor for Industry Based on Optical Fibers and Ruby Crystal.

This paper presents the construction of an innovative high-temperature sensor based on the optical principle. The sensor is designed especially for the measurement of exhaust gases with a temperature range of up to +850 °C. The methodology is based on two principles-luminescence and dark body radiation. The core of this study is the description of sensing element construction together with electronics and the system of photodiode dark current compensation. An advantage of this optical-based system is its immunity to strong magnetic fields. This study also discusses results achieved and further steps. The solution is covered by a European Patent.

CMOS Image Sensor for Broad Spectral Range with >90% Quantum Efficiency.

Even though the recent progress made in complementary metal-oxide-semiconductor (CMOS) image sensors (CIS) has enabled numerous applications affecting our daily lives, the technology still relies on conventional methods such as antireflective coatings and ion-implanted back-surface field to reduce optical and electrical losses resulting in limited device performance. In this work, these methods are replaced with nanostructured surfaces and atomic layer deposited surface passivation. The results show that such surface nanoengineering applied to a commercial backside illuminated CIS significantly extends its spectral range and enhances its photosensitivity as demonstrated by >90% quantum efficiency in the 300-700 nm wavelength range. The surface nanoengineering also reduces the dark current by a factor of three. While the photoresponse uniformity of the sensor is seen to be slightly better, possible scattering from the nanostructures can lead to increased optical crosstalk between the pixels. The results demonstrate the vast potential of surface nanoengineering in improving the performance of CIS for a wide range of applications.

Dark Current Analysis on GeSn p-i-n Photodetectors.

Group IV alloys of GeSn have been extensively investigated as a competing material alternative in shortwave-to-mid-infrared photodetectors (PDs). The relatively large defect densities present in GeSn alloys are the major challenge in developing practical devices, owing to the low-temperature growth and lattice mismatch with Si or Ge substrates. In this paper, we comprehensively analyze the impact of defects on the performance of GeSn p-i-n homojunction PDs. We first present our theoretical models to calculate various contributing components of the dark current, including minority carrier diffusion in p- and n-regions, carrier generation-recombination in the active intrinsic region, and the tunneling effect. We then analyze the effect of defect density in the GeSn active region on carrier mobilities, scattering times, and the dark current. A higher defect density increases the dark current, resulting in a reduction in the detectivity of GeSn p-i-n PDs. In addition, at low Sn concentrations, defect-related dark current density is dominant, while the generation dark current becomes dominant at a higher Sn content. These results point to the importance of minimizing defect densities in the GeSn material growth and device processing, particularly for higher Sn compositions necessary to expand the cutoff wavelength to mid- and long-wave infrared regime. Moreover, a comparative study indicates that further improvement of the material quality and optimization of device structure reduces the dark current and thereby increases the detectivity. This study provides more realistic expectations and guidelines for evaluating GeSn p-i-n PDs as a competitor to the III-V- and II-VI-based infrared PDs currently on the commercial market.

"GeSn Rule-23"-The Performance Limit of GeSn Infrared Photodiodes.

Group-IV GeSn photodetectors (PDs) compatible with standard complementary metal-oxide-semiconductor (CMOS) processing have emerged as a new and non-toxic infrared detection technology to enable a wide range of infrared applications. The performance of GeSn PDs is highly dependent on the Sn composition and operation temperature. Here, we develop theoretical models to establish a simple rule of thumb, namely "GeSn-rule 23", to describe GeSn PDs' dark current density in terms of operation temperature, cutoff wavelength, and Sn composition. In addition, analysis of GeSn PDs' performance shows that the responsivity, detectivity, and bandwidth are highly dependent on operation temperature. This rule provides a simple and convenient indicator for device developers to estimate the device performance at various conditions for practical applications.

A CMOS Image Sensor Dark Current Compensation Using In-Pixel Temperature Sensors.

This paper presents a novel technique for dark current compensation of a CMOS image sensor (CIS) by using in-pixel temperature sensors (IPTSs) over a temperature range from -40 °C to 90 °C. The IPTS makes use of the 4T pixel as a temperature sensor. Thus, the 4T pixel has a double functionality, either as a pixel or as a temperature sensor. Therefore, the dark current compensation can be carried out locally by generating an artificial dark reference frame from the temperature measurements of the IPTSs and the temperature behavior of the dark current (previously calibrated). The artificial dark current frame is subtracted from the actual images to reduce/cancel the dark signal level of the pictures. In a temperature range from -40 °C to 90 °C, results show that the temperature sensors have an average temperature coefficient (TC) of 1.15 mV/°C with an inaccuracy of ±0.55 °C. Parameters such as conversion gain, gain of the amplifier, and ADC performance have been analyzed over temperature. The dark signal can be compensated in the order of 80% in its median value, and the nonuniformity is reduced in the order of 55%.

A High-Performance UVA Photodetector Based on Polycrystalline Perovskite MAPbCl3/TiO2 Nanorods Heterojunctions.

The application of TiO2 nanorods in the field of ultraviolet (UV) photodetectors is hindered by a high dark current, which is attributed to crystal surface defects and intrinsic excitation by carrier thermal diffusion. Here, a photodetector based on polycrystalline perovskite MAPbCl3/TiO2 nanorods heterojunctions has been fabricated to overcome the shortcoming. The structure was composed of horizontal MAPbCl3 polycrystalline and vertically aligned TiO2 nanorods array. Many localized depletion regions at the MAPbCl3/TiO2 interface can reduce the dark current. The TiO2/MAPbCl3 detector shows high performance including a high ratio of light-dark current of about six orders of magnitude, which is much larger than that of the TiO2 detector. This study indicates the potential in the TiO2/MAPbCl3 heterojunction to fabricate high-performance UV detectors.

Demonstration of SWIR Silicon-Based Photodetection by Using Thin ITO/Au/Au Nanoparticles/n-Si Structure.

Plasmonic photodetection based on the hot-electron generation in nanostructures is a promising strategy for sub-band detection due to the high conversion efficiencies; however, it is plagued with the high dark current. In this paper, we have demonstrated the plasmonic photodetection with dark current suppression to create a Si-based broadband photodetector with enhanced performance in the short-wavelength infrared (SWIR) region. By hybridizing a 3 nm Au layer with the spherical Au nanoparticles (NPs) formed by rapid thermal annealing (RTA) on Si substrate, a well-behaved ITO/Au/Au NPs/n-Si Schottky photodetector with suppressed dark current and enhanced absorption in the SWIR region is obtained. This optimized detector shows a broad detection beyond 1200 nm and a high responsivity of 22.82 mA/W at 1310 nm at -1 V, as well as a low dark current density on the order of 10-5 A/cm2. Such a Si-based plasmon-enhanced detector with desirable performance in dark current will be a promising strategy for realization of the high SNR detector while keeping fabrication costs low.

Dark Current Modeling for a Polyimide-Amorphous Lead Oxide-Based Direct Conversion X-ray Detector.

The reduction of the dark current (DC) to a tolerable level in amorphous selenium (a-Se) X-ray photoconductors was one of the key factors that led to the successful commercialization of a-Se-based direct conversion flat panel X-ray imagers (FPXIs) and their widespread clinical use. Here, we discuss the origin of DC in another X-ray photoconductive structure that utilizes amorphous lead oxide (a-PbO) as an X-ray-to-charge transducer and polyimide (PI) as a blocking layer. The transient DC in a PI/a-PbO detector is measured at different applied electric fields (5-20 V/µm). The experimental results are used to develop a theoretical model describing the electric field-dependent transient behavior of DC. The results of the DC kinetics modeling show that the DC, shortly after the bias application, is primarily controlled by the injection of holes from the positively biased electrode and gradually decays with time to a steady-state value. DC decays by the overarching mechanism of an electric field redistribution, caused by the accumulation of trapped holes in deep localized states within the bulk of PI. Thermal generation and subsequent multiple-trapping (MT) controlled transport of holes within the a-PbO layer governs the steady-state value at all the applied fields investigated here, except for the largest applied field of 20 V/µm. This suggests that a thicker layer of PI would be more optimal to suppress DC in the PI/a-PbO detector presented here. The model can be used to find an approximate optimal thickness of PI for future iterations of PI/a-PbO detectors without the need for time and labor-intensive experimental trial and error. In addition, we show that accounting for the field-induced charge carrier release from traps, enhanced by charge hopping transitions between the traps, yields an excellent fit between the experimental and simulated results, thus, clarifying the dynamic process of reaching a steady-state occupancy level of the deep localized states in the PI. Practically, the electric field redistribution causes the internal field to increase in magnitude in the a-PbO layer, thus improving charge collection efficiency and temporal performance over time, as confirmed by experimental results. The electric field redistribution can be implemented as a warm-up time for a-PbO-based detectors.

Extending Effective Dynamic Range of Hyperspectral Line Cameras for Short Wave Infrared Imaging.

In this work, a multi-exposure method is proposed to increase the dynamic range (DR) of hyperspectral imaging using an InGaAs-based short-wave infrared (SWIR) hyperspectral line camera. Spectral signatures of materials were captured for scenarios in which the DR of a scene was greater than the DR of a line camera. To demonstrate the problem and test the proposed multi-exposure method, plastic detection in food waste and polymer sorting were chosen as the test application cases. The DR of the hyperspectral camera and the test samples were calculated experimentally. A multi-exposure method is proposed to create high-dynamic-range (HDR) images of food waste and plastic samples. Using the proposed method, the DR of SWIR imaging was increased from 43 dB to 73 dB, with the lowest allowable signal-to-noise ratio (SNR) set to 20 dB. Principal Component Analysis (PCA) was performed on both HDR and non-HDR image data from each test case to prepare the training and testing data sets. Finally, two support vector machine (SVM) classifiers were trained for each test case to compare the classification performance of the proposed multi-exposure HDR method against the single-exposure non-HDR method. The HDR method was found to outperform the non-HDR method in both test cases, with the classification accuracies of 98% and 90% respectively, for the food waste classification, and with 95% and 35% for the polymer classification.

Improvement of Dynamic Performance and Detectivity in Near-Infrared Colloidal Quantum Dot Photodetectors by Incorporating Conjugated Polymers.

Colloidal quantum dots (CQDs) have a unique advantage in realizing near-infrared (NIR) photodetection since their optical properties are readily tuned by the particle size, but CQD-based photodetectors (QPDs) presently show a high dark current density (Jd) and insufficient dynamic characteristics. To overcome these two problems, we synthesized and introduced two types of conjugated polymers (CPs) by replacing the p-type CQD layer in the QPDs. The low dielectric constant and insulating properties of CPs under dark conditions effectively suppressed the Jd in the QPDs. In addition, the energy-level alignment and high-hole mobility of the CPs facilitated hole transport. Therefore, both the responsivity and specific detectivity were highly enhanced in the CP-based QPDs. Notably, the dynamic characteristics of the QPDs, such as the -3 dB cut-off frequency and rising/falling response times, were significantly improved in the CP-based QPDs owing to the sizable molecular ordering and fast hole transport of the CP in the film state as well as the low trap density, well-aligned energy levels, and good interfacial contact in the CP-based devices.

Calibration of a Hyper-Spectral Imaging System Using a Low-Cost Reference.

In this paper, we present a hyper-spectral imaging system and practical calibration procedure using a low-cost calibration reference made of polytetrafluoroethylene. The imaging system includes a hyperspectral camera and an active source of illumination with a variable spectral distribution of intensity. The calibration reference is used to measure the relative reflectance of any material surface independent of the spectral distribution of light and camera sensitivity. Winter road conditions are taken as a test application, and several spectral images of snow, icy asphalt, dry asphalt, and wet asphalt were made at different exposure times using different illumination spectra. Graphs showing measured relative reflectance for different road conditions support the conclusion that measurements are independent of illumination. Principal component analysis of the acquired spectral data for road conditions shows well separated data clusters, demonstrating the system's suitability for material classification.

The quantification and potential impact of dark current on treatments with an MR-guided radiotherapy (MRgRT) system.

PURPOSE: Dark current radiation produced during linac beam-hold has the potential to lead to unplanned dose delivered to the patient. With the increased usage of motion management and step-and-shoot IMRT deliveries for MR-guided systems leading to increased beam-hold time, it is necessary to consider the impact of dark current radiation on patient treatments. METHODS: The relative dose rate due to dark current for the ViewRay MRIdian linac was measured longitudinally over 15 months (June 2018-August 2019). Ion chamber measurements were acquired with the linac in the beam-hold state and the beam-on state, with the ratio representing the relative dark current dose rate. The potential contribution of the dark current dose to the overall prescription was retrospectively analyzed for 972 fractions from 83 patients over the same time period. The amount of time spent in the beam-hold state was combined with the monthly measured relative dark current dose rate to estimate the dark current dose contribution. RESULTS: The relative dark current dose rate compared to the beam-on dose rate was 0.12% ± 0.027%. In a near worst-case estimation, the dark current dose contribution accounted for 0.90% ± 0.67% of the prescription dose across all fractions (3.61% maximum). Gantry and MLC motion between segments accounted for 87% of the dark current contribution, with the remaining 13% attributable to gating during segment delivery. The largest dark current contributions were associated with plans delivering a small dose per treatment segment. CONCLUSIONS: The dark current associated with new clinical treatment units should be considered prior to treatment delivery to ensure it will not lead to dosimetric inaccuracies. For the MRIdian linac system investigated in this work, the contribution from dark current remained relatively low, though users should be cognizant of the larger potential dosimetric contribution for plans with small doses per segment.

A High-Performance 2.5 µm Charge Domain Global Shutter Pixel and Near Infrared Enhancement with Light Pipe Technology.

We developed a new 2.5 µm global shutter (GS) pixel using a 65 nm process with an advanced light pipe (LP) structure. This is the world's smallest charge domain GS pixel reported so far. This new developed pixel platform is a key enabler for ultra-high resolution sensors, industrial cameras with wide aperture lenses, and low form factors optical modules for mobile applications. The 2.5 µm GS pixel showed excellent optical performances: 68% quantum efficiency (QE) at 530 nm, ±12.5 degrees angular response (AR), and quite low parasitic light sensitivity (PLS)-10,400 1/PLS with the F#2.8 lens. In addition, we achieved an extremely low memory node (MN) dark current 13 e-/s at 60 °C by fully pinned MN. Furthermore, we studied how the LP technology contributes to the improvement of the modulation transfer function (MTF) in near infrared (NIR) enhanced GS pixel. The 2.8 µm GS pixel using a p-substrate showed 109 lp/mm MTF@50% at 940 nm, which is 1.6 times better than that without an LP. The MTF can be more enhanced by the combination of the LP and the deep photodiode (PD) electrically isolated from the substrate. We demonstrated the advantage of using LP technology and our advanced stacked deep photodiode (SDP) technology together. This unique combination showed an improvement of more than 100% in NIR QE while maintaining an MTF that is close to the theoretical Nyquist limit (MTF @50% = 156 lp/mm).

Electrical Characterization of the Backside Interface on BSI Global Shutter Pixels with Tungsten-Shield Test Structures on CDTI Process.

A new methodology is presented using well known electrical characterization techniques on dedicated single devices in order to investigate backside interface contribution to the measured pixel dark current in BSI CMOS image sensors technologies. Extractions of interface states and charges within the dielectric densities are achieved. The results show that, in our case, the density of state is not directly the source of dark current excursions. The quality of the passivation of the backside interface appears to be the key factor. Thanks to the presented new test structures, it has been demonstrated that the backside interface contribution to dark current can be investigated separately from other sources of dark current, such as the frontside interface, DTI (deep trench isolation), etc.

Fully Depleted, Trench-Pinned Photo Gate for CMOS Image Sensor Applications.

Tackling issues of implantation-caused defects and contamination, this paper presents a new complementary metal-oxide-semiconductor (CMOS) image sensor (CIS) pixel design concept based on a native epitaxial layer for photon detection, charge storage, and charge transfer to the sensing node. To prove this concept, a backside illumination (BSI), p-type, 2-µm-pitch pixel was designed. It integrates a vertical pinned photo gate (PPG), a buried vertical transfer gate (TG), sidewall capacitive deep trench isolation (CDTI), and backside oxide-nitride-oxide (ONO) stack. The designed pixel was fabricated with variations of key parameters for optimization. Testing results showed the following achievements: 13,000 h+ full-well capacity with no lag for charge transfer, 80% quantum efficiency (QE) at 550-nm wavelength, 5 h+/s dark current at 60 °C, 2 h+ temporal noise floor, and 75 dB dynamic range. In comparison with conventional pixel design, the proposed concept could improve CIS performance.

WSe2 Photovoltaic Device Based on Intramolecular p-n Junction.

High quality p-n junctions based on 2D layered materials (2DLMs) are urgent to exploit, because of their unique properties such as flexibility, high absorption, and high tunability which may be utilized in next-generation photovoltaic devices. Based on transfer technology, large amounts of vertical heterojunctions based on 2DLMs are investigated. However, the complicated fabrication process and the inevitable defects at the interfaces greatly limit their application prospects. Here, an in-plane intramolecular WSe2 p-n junction is realized, in which the n-type region and p-type region are chemically doped by polyethyleneimine and electrically doped by the back-gate, respectively. An ideal factor of 1.66 is achieved, proving the high quality of the p-n junction realized by this method. As a photovoltaic detector, the device possesses a responsivity of 80 mA W-1 (≈20% external quantum efficiency), a specific detectivity of over 1011 Jones and fast response features (200 µs rising time and 16 µs falling time) at zero bias, simultaneously. Moreover, a large open-circuit voltage of 0.38 V and an external power conversion efficiency of ≈1.4% realized by the device also promises its potential in microcell applications.

Proximity Gettering Design of Hydrocarbon⁻Molecular⁻Ion⁻Implanted Silicon Wafers Using Dark Current Spectroscopy for CMOS Image Sensors.

We developed silicon epitaxial wafers with high gettering capability by using hydrocarbon-molecular-ion implantation. These wafers also have the effect of hydrogen passivation on process-induced defects and a barrier to out-diffusion of oxygen of the Czochralski silicon (CZ) substrate bulk during Complementary metal-oxide-semiconductor (CMOS) device fabrication processes. We evaluated the electrical device performance of CMOS image sensor fabricated on this type of wafer by using dark current spectroscopy. We found fewer white spot defects compared with those of intrinsic gettering (IG) silicon wafers. We believe that these hydrocarbon-molecular-ion-implanted silicon epitaxial wafers will improve the device performance of CMOS image sensors.