In Situ Growth of Wafer-Scale Patterned Graphene and Fabrication of Optoelectronic Artificial Synaptic Device Array Based on Graphene/n-AlGaN Heterojunction for Visual Learning.

The unique optical and electrical properties of graphene-based heterojunctions make them significant for artificial synaptic devices, promoting the advancement of biomimetic vision systems. However, mass production and integration of device arrays are necessary for visual imaging, which is still challenging due to the difficulty in direct growth of wafer-scale graphene patterns. Here, a novel strategy is proposed using photosensitive polymer as a solid carbon source for in situ growth of patterned graphene on diverse substrates. The growth mechanism during high-temperature annealing is elucidated, leading to wafer-scale graphene patterns with exceptional uniformity, ideal crystalline quality, and precise control over layer number by eliminating the release of volatile from oxygen-containing resin. The growth strategy enables the fabrication of two-inch optoelectronic artificial synaptic device array based on graphene/n-AlGaN heterojunction, which emulates key functionalities of biological synapses, including short-term plasticity, long-term plasticity, and spike-rate-dependent plasticity. Moreover, the mimicry of visual learning in the human brain is attributed to the regulation of excitatory and inhibitory post-synapse currents, following a learning rule that prioritizes initial recognition before memory formation. The duration of long-term memory reaches 10 min. The in situ growth strategy for patterned graphene represents the novelty for fabricating fundamental hardware of an artificial neuromorphic system.

Investigation of AlGaN UV emitting tunnel junction LED devices by off-axis electron holography.

Here we use off-axis electron holography combined with advanced transmission electron microscopy techniques to understand the opto-electronic properties of AlGaN tunnel junction (TJ)-light-emitting diode (LED) devices for ultraviolet emission. Four identical AlGaN LED devices emitting at 290 nm have been grown by metal-organic chemical vapour deposition. Then Ge doped n-type regions with and without InGaN or GaN interlayers (IL) have been grown by molecular beam epitaxy onto the top Mg doped p-type layer to form a TJ and hence a high quality ohmic metal contact. Off-axis electron holography has then been used to demonstrate a reduction in the width of the TJ from 9.5 to 4.1 nm when an InGaN IL is used. As such we demonstrate that off-axis electron holography can be used to reproducibly measure nm-scale changes in electrostatic potential in highly defected and challenging materials such as AlGaN and that systematic studies of devices can be performed. The LED devices are then characterized using standard opto-electric techniques and the improvements in the performance of the LEDs are correlated with the electron holography results.

A mixer architecture using GaN-based split-gate nanowire transistor.

Frequency mixer is an essential block in radio-frequency signal processing for frequency translation and phase comparison. The most common mixers are fabricated using passive elements which suffer from significant conversion loss and low isolation. Mixers using active devices are used less frequently and rather less matured on GaN technology. Here, we demonstrate a mixer based on GaN split-gate nanowire transistor, allowing low conversion loss and high isolation. A constriction is formed by electrostatic modulation of the effective gate width. The threshold voltage of the transistor is modified by one of the gate voltages through the width variation, while the other gate voltage biases the transistor in the saturation region. The nonlinear dependency of the transistor characteristics on the two gate voltages facilitates frequency translation. The mixing characteristics of this architecture are verified both experimentally and theoretically. The output power spectral density peaks at the difference frequency with a minimal conversion loss. Extremely high isolation is measured using three-port S-parameter measurements. The proposed architecture shows multiple benefits, additionally facilitating monolithic mixers on the GaN platform.

Core-Shell Nanorods as Ultraviolet Light-Emitting Diodes.

Existing barriers to efficient deep ultraviolet (UV) light-emitting diodes (LEDs) may be reduced or overcome by moving away from conventional planar growth and toward three-dimensional nanostructuring. Nanorods have the potential for enhanced doping, reduced dislocation densities, improved light extraction efficiency, and quantum wells free from the quantum-confined Stark effect. Here, we demonstrate a hybrid top-down/bottom-up approach to creating highly uniform AlGaN core-shell nanorods on sapphire repeatable on wafer scales. Our GaN-free design avoids self-absorption of the quantum well emission while preserving electrical functionality. The effective junctions formed by doping of both the n-type cores and p-type caps were studied using nanoprobing experiments, where we find low turn-on voltages, strongly rectifying behaviors and significant electron-beam-induced currents. Time-resolved cathodoluminescence measurements find short carrier liftetimes consistent with reduced polarization fields. Our results show nanostructuring to be a promising route to deep-UV-emitting LEDs, achievable using commercially compatible methods.

Optical and Electrical Properties of AlxGa1-xN/GaN Epilayers Modulated by Aluminum Content.

AlGaN-based LEDs are promising for many applications in deep ultraviolet fields, especially for water-purification projects, air sterilization, fluorescence sensing, etc. However, in order to realize these potentials, it is critical to understand the factors that influence the optical and electrical properties of the device. In this work, AlxGa1-xN (x = 0.24, 0.34, 0.47) epilayers grown on c-plane patterned sapphire substrate with GaN template by the metal organic chemical vapor deposition (MOCVD). It is demonstrated that the increase of the aluminum content leads to the deterioration of the surface morphology and crystal quality of the AlGaN epitaxial layer. The dislocation densities of AlxGa1-xN epilayers were determined from symmetric and asymmetric planes of the ω-scan rocking curve and the minimum value is 1.01 × 109 cm-2. The (101¯5) plane reciprocal space mapping was employed to measure the in-plane strain of the AlxGa1-xN layers grown on GaN. The surface barrier heights of the AlxGa1-xN samples derived from XPS are 1.57, 1.65, and 1.75 eV, respectively. The results of the bandgap obtained by PL spectroscopy are in good accordance with those of XRD. The Hall mobility and sheet electron concentration of the samples are successfully determined by preparing simple indium sphere electrodes.

A highly sensitive sensor for carcinoembryonic antigen based on AlGaN/GaN high-electron-mobility transistors.

Carcinoembryonic antigen (CEA) is a well-known biomarker and validated serum biomarker for lung cancer. We introduce a simple label-free method for CEA detection. Specific recognition of CEA was made possible by immobilizing CEA antibodies in the sensing region of AlGaN/GaN high-electron-mobility transistors. The biosensors have a detection limit of 1 fg ml-1in phosphate buffer solution. This approach has advantages of integration, miniaturization, low cost, and rapid detection compared to other testing methods for lung cancer and could be used in future medical diagnostics.

Temperature-dependent photoluminescence properties of single defects in AlGaN micropillars.

Single-photon emitters (SPEs) are attractive as integrated platforms for quantum applications in technologically mature wide-bandgap semiconductors since their stable operation at room temperature or even at high temperatures. In this study, we systematically studied the temperature dependence of the SPE in AlGaN micropillar by experiment. The photoluminescence (PL) spectrum, PL intensity, radiative lifetime and second-order autocorrelation function measurements are investigated over the temperature range from 303 to 373 K. The point defects of AlGaN show strong zero phonon line in the wavelength range of 800-900 nm and highly antibunched photon emission even up to 373 K. Our study reveals a possible mechanism for linewidth broadening in AlGaN SPE at high temperatures. This indicates a possible key for on-chip integration applications based on this material operating at high temperatures.

Low-Power AlGaN/GaN Triangular Microcantilever for Air Flow Detection.

This paper investigates an AlGaN/GaN triangular microcantilever with a heated apex for airflow detection utilizing a very simple two-terminal sensor configuration. Thermal microscope images were used to verify that the apex region of the microcantilever reached significantly higher temperatures than other parts under applied voltage bias. The sensor response was found to vary linearly with airflow rate when tested over a range of airflow varying from 16 to 2000 sccm. The noise-limited flow volume measurement yielded ~4 sccm resolution, while the velocity resolution was found to be 0.241 cm/s, which is one of the best reported so far for thermal sensors. The sensor was able to operate at a very low power consumption level of ~5 mW, which is one of the lowest reported for these types of sensors. The intrinsic response time of the sensor was estimated to be on the order of a few ms, limited by its thermal properties. Overall, the microcantilever sensor, with its simple geometry and measurement configurations, was found to exhibit attractive performance metrics useful for various sensing applications.

High Power Figure-of-Merit, 10.6-kV AlGaN/GaN Lateral Schottky Barrier Diode with Single Channel and Sub-100-µm Anode-to-Cathode Spacing.

GaN-based lateral Schottky barrier diodes (SBDs) have attracted great attention for high-power applications due to its combined high electron mobility and large critical breakdown field. However, the breakdown voltage (BV) of the SBDs are far from exploiting the material advantages of GaN at present, limiting the desire to use GaN for ultra-high voltage (UHV) applications. Then, a golden question is whether the excellent properties of GaN-based materials can be practically used in the UHV field? Here, UHV AlGaN/GaN SBDs are demonstrated on sapphire with a BV of 10.6 kV, a specific on-resistance (RON,SP ) of 25.8 mΩ cm2 , yielding a power figure-of-merit (P-FOM = BV2 /RON,SP ) of 4.35 GW cm-2 . These devices are designed with single channel and 85-µm anode-to-cathode spacing, without other additional electric field management, demonstrating its great potential for the UHV application in power electronics.

Growth of uniform Mg-doped p-AlGaN nanowires using plasma-assisted molecular beam epitaxy technique for UV-A emitters.

In this manuscript, we have shown the growth and extensive structural and optical characteristic of the uniformly Mg-doped Al0.23Ga0.77N (UV-A region,λ∼ 323 nm) nanowire. The Kelvin probe force microscopy was employed to determine the profile of holes in p-type AlGaN nanowires by measuring the work function changes induced by Mg incorporation. The influence of surface band bending on doping concentration has thoroughly been discussed. Our experiment confirms the homogeneous incorporation of Mg throughout the nanowire without any top surface Mg segregation. In this work, we have also demonstrated a comprehensive analysis of acceptor states induced thermal quenching behaviour in the optical transition of Mg-doped AlGaN nanowire. We propose a phenomenological model, based on the rate equation which confirms that achieving higher 'hole' (p-doping) concentration in AlGaN nanowire (>1018cm-3) is more conducive than the planar counterpart if the growth of NWs is carried out at optimized process conditions. This rate equation-based model has also demonstrated the influence of sidewall surface passivation in those AlGaN nanowires.

Nanoporous GaN onp-type GaN: a Mg out-diffusion compensation layer for heavily Mg-dopedp-type GaN.

Embeddingp-type gallium nitride (p-GaN) with controlled Mg out-diffusion in adjacent epitaxial layers is a key for designing various multi-junction structures with high precision and enabling more reliable bandgap engineering of III-nitride-based optoelectronics and electronics. Here, we report, for the first time, experimental evidence of how nanoporous GaN (NP GaN) can be introduced as a compensation layer for the Mg out-diffusion fromp-GaN. NP GaN onp-GaN provides anex-situformed interface with oxygen and carbon impurities, compensating for Mg out-diffusion fromp-GaN. To corroborate our findings, we used two-dimensional electron gas (2DEG) formed at the interface of AlGaN/GaN as the indicator to study the impact of the Mg out-diffusion from underlying layers. Electron concentration evaluated from the capacitance-voltage measurement shows that 9 × 1012cm-2of carriers accumulate in the AlGaN/GaN 2DEG structure grown on NP GaN, which is the almost same number of carriers as that grown with nop-GaN. In contrast, 2DEG onp-GaN without NP GaN presents 9 × 109cm-2of the electron concentration, implying the 2DEG structure is depleted by Mg out-diffusion. The results address the efficacy of NP GaN and its' role in successfully embeddingp-GaN in multi-junction structures for various state-of-the-art III-nitride-based devices.

Localized surface plasmon resonance-enhanced solar-blind Al0.4Ga0.6N MSM photodetectors exhibiting high-temperature robustness.

The appealing properties of tunable direct wide bandgap, high-temperature robustness and chemical hardness, make AlxGa1-xN a promising candidate for fabricating robust solar-blind photodetectors (PDs). In this work, we have utilized the optical phenomenon of localized surface plasmon resonance (LSPR) in metal nanoparticles (NPs) to significantly enhance the performance of solar-blind Al0.4Ga0.6N metal-semiconductor-metal PDs that exhibit high-temperature robustness. We demonstrate that the presence of palladium (Pd) NPs leads to a remarkable enhancement by nearly 600, 300, and 462%, respectively, in the photo-to-dark current ratio (PDCR), responsivity, and specific detectivity of the Al0.4Ga0.6N PD at the wavelength of 280 nm. Using the optical power density of only 32µW cm-2at -10 V, maximum values of ∼3 × 103, 2.7 AW-1, and 2.4 × 1013Jones are found for the PDCR, responsivity and specific detectivity, respectively. The experimental observations are supported by finite difference time domain simulations, which clearly indicate the presence of LSPR in Pd NPs decorated on the surface of Al0.4Ga0.6N. The mechanism behind the enhancement is investigated in detail, and is ascribed to the LSPR induced effects, namely, improved optical absorption, enhanced local electric field and LSPR sensitization effect. Moreover, the PD exhibits a stable operation up to 400 K, thereby exhibiting the high-temperature robustness desirable for commercial applications.

Pt/AlGaN Nanoarchitecture: Toward High Responsivity, Self-Powered Ultraviolet-Sensitive Photodetection.

Energy-saving photodetectors are the key components in future photonic systems. Particularly, self-powered photoelectrochemical-type photodetectors (PEC-PDs), which depart completely from the classical solid-state junction device, have lately intrigued intensive interest to meet next-generation power-independent and environment-sensitive photodetection. Herein, we construct, for the first time, solar-blind PEC PDs based on self-assembled AlGaN nanostructures on silicon. Importantly, with the proper surface platinum (Pt) decoration, a significant boost of photon responsivity by more than an order of magnitude was achieved in the newly built Pt/AlGaN nanoarchitectures, demonstrating strikingly high responsivity of 45 mA/W and record fast response/recovery time of 47/20 ms without external power source. Such high solar-blind photodetection originates from the unparalleled material quality, fast interfacial kinetics, as well as high carrier separation efficiency which suggests that embracement of defect-free wide-bandgap semiconductor nanostructures with appropriate surface decoration offers an unprecedented opportunity for designing future energy-efficient and large-scale optoelectronic systems on a silicon platform.

Very Low-Efficiency Droop in 293 nm AlGaN-Based Light-Emitting Diodes Featuring a Subtly Designed p-Type Layer.

This paper reports an AlGaN-based ultraviolet-B light-emitting diode (UVB-LED) with a peak wavelength at 293 nm that was almost free of efficiency droop in the temperature range from 298 to 358 K. Its maximum external quantum efficiencies (EQEs), which were measured at a current density of 88.6 A cm-2, when operated at 298, 318, and 338 K were 2.93, 2.84, and 2.76%, respectively; notably, however, the current droop (J-droop) in each of these cases was less than 1%. When the temperature was 358 K, the maximum EQE of 2.61% occurred at a current density of 63.3 A cm-2, and the J-droop was 1.52%. We believe that the main mechanism responsible for overcoming the J-droop was the uniform distribution of the concentrations of injected electrons and holes within the multiple quantum wells. Through the subtle design of the p-type AlGaN layer, with the optimization of the composition and doping level, the hole injection efficiency was enhanced, and the Auger recombination mechanism was inhibited in an experimental setting.

Compositionally graded III-nitride alloys: building blocks for efficient ultraviolet optoelectronics and power electronics.

Wide bandgap aluminum gallium nitride (AlGaN) semiconductor alloys have established themselves as the key materials for building ultraviolet (UV) optoelectronic and power electronic devices. However, further improvements to device performance are lagging, largely due to the difficulties in precisely controlling carrier behavior, both carrier generation and carrier transport, within AlGaN-based devices. Fortunately, it has been discovered that instead of using AlGaN layers with fixed Al compositions, by grading the Al composition along the growth direction, it is possible to (1) generate high-density electrons and holes via polarization-induced doping; (2) manipulate carrier transport behavior via energy band modulation, also known as 'band engineering'. Consequently, such compositionally graded AlGaN alloys have attracted extensive interest as promising building blocks for efficient AlGaN-based UV light emitters and power electronic devices. In this review, we focus on the unique physical properties of graded AlGaN alloys and highlight the key roles that such graded structures play in device exploration. Firstly, we elaborate on the underlying mechanisms of efficient carrier generation and transport manipulation enabled by graded AlGaN alloys. Thereafter, we comprehensively summarize and discuss the recent progress in UV light emitters and power electronic devices incorporating graded AlGaN structures. Finally, we outline the prospects associated with the implementation of graded AlGaN alloys in the pursuit of high-performance optoelectronic and power electronic devices.

Sec-Eliminating the SARS-CoV-2 by AlGaN Based High Power Deep Ultraviolet Light Source.

The world-wide spreading of coronavirus disease (COVID-19) has greatly shaken human society, thus effective and fast-speed methods of non-daily-life-disturbance sterilization have become extremely significant. In this work, by fully benefitting from high-quality AlN template (with threading dislocation density as low as ≈6×108 cm-2) as well as outstanding deep ultraviolet (UVC-less than 280 nm) light-emitting diodes (LEDs) structure design and epitaxy optimization, high power UVC LEDs and ultra-high-power sterilization irradiation source are achieved. Moreover, for the first time, a result in which a fast and complete elimination of SARS-CoV-2 (the virus causes COVID-19) within only 1 s is achieved by the nearly whole industry-chain-covered product. These results advance the promising potential in UVC-LED disinfection particularly in the shadow of COVID-19.

Suppressing the efficiency droop in the AlGaN-based UVB LED.

Optoelectronic properties of semiconducting aluminum gallium nitride (AlGaN) - based ultraviolet - B (UVB) light-emitting diodes (LEDs) are crucial for the real-world medical applications such as cancer and immunotherapy. Therefore, we have numerically investigated the performances of AlGaN-based UVB LEDs for the suppression of efficiency droop as well as for the enhancement of hole injection in the multiquantum wells (MQWs). The influence of the undoped (ud)-AlGaN final barrier (FB) as well as Mg-doped multiquantum barrier electron blocking layer (p-MQB EBL) on the efficiency droop has been specifically focused. For the evaluation of the proposed device performance, we have compared its internal quantum efficiency (IQE), carrier concentration, energy band diagram, and radiative recombination rate with the conventional device structure. Furthermore, the influence of Al-composition in the p-AlGaN hole source layer (HSL) on the operating voltages of the proposed UVB LEDs was considered. The simulation results suggest that our proposed structure has high peak efficiency and much lower efficiency droop as compared to the reference structure (conventional). Ultimately, the radiative recombination rate in the MQWs of the proposed structure has been found to raise up to ~73%, which is attributed to the enhanced level of electron and hole concentrations by ~64% and 13% , respectively, in the active region. Finally, a high efficiency droop up to ~42% in RLED has been found successfully suppressed to ~7% by using optimized ud-AlGaN FB and p-MQB EBL in the proposed UVB device structure.

Effect of backside dry etching on the device performance of AlGaN/GaN HEMTs.

AlGaN/GaN heterojunction-based high-electron-mobility transistors (HEMTs) have significant advantages of high carrier concentration, high electron mobility, and large breakdown voltage, and show promising potential as power devices. Being widely used in semiconductor manufacturing, dry etching process is capable of fabricating microstructures and thinning substrate from backside, which is good for developing flexible devices. Here, we investigate the effect of backside dry etching of Si substrate on the physical and electrical properties of AlGaN/GaN HEMTs. The physical properties were characterized by scanning electron microscope, Raman spectra, and x-ray diffraction (XRD). After the dry etching process, the peak red-shift of GaNE2mode indicates an increase of tensile stress, and the XRD rocking curve of GaN film shows to a certain extent decreased dislocation density. Furthermore, the maximum saturation current density and maximum transconductance of the HEMTs are improved by 21.1% and 25.5%, respectively. The approach of backside dry etching for thinning Si substrate would contribute to the optimization of GaN heterojunction-based devices, and also provide inspirations for the development of flexible and robust power devices.

Compositionally graded AlGaN hole source layer for deep-ultraviolet nanowire light-emitting diode without electron blocking layer.

The electron blocking layer (EBL) plays a vital role in blocking the electron overflow from an active region in the AlGaN-based deep-ultraviolet light-emitting diode (DUV-LED). Besides the blocking of electron overflow, EBL reduces hole injection toward the active region. In this work, we proposed a DUV nanowire (NW) LED structure without EBL by replacing it with a compositionally continuous graded hole source layer (HSL). Our proposed graded HSL without EBL provides a better electron blocking effect and enhanced hole injection efficiency. As a result, optical power is improved by 48% and series resistance is reduced by 50% with 4.8 V threshold voltage. Moreover, graded HSL without EBL offer reduced electric field within the active region, which leads to a significant increment in radiative recombination rate and enhancement of spontaneous emission by 34% at 254 nm wavelength, as a result, 52% maximum internal quantum efficiency with 24% efficiency drop is reported.

AlGaN-based ultraviolet light-emitting diodes: challenges and opportunities.

Due to low power consumption, tunable wavelength and long lifetime ultraviolet light-emitting diodes (UV LEDs) have found many applications in different fields such as health care, water disinfection, agriculture. In this review, we report different problems that lead to low external quantum efficiency of UV LEDs. We also report various challenges in the growth process of the UV LEDs such as increase in the dislocation density, which affects the optoelectronic performance of the devices. We also report the analysis of the two modes of light polarization, i.e. transverse electric and transverse magnetic in UV LEDs. Moreover, we also summarize various state-of-the-art reported external quantum efficiencies, light output power and peak emission wavelengths in the three UV wavelength regimes, i.e. UV-A, UV-B and UV-C LEDs.