Parallel edge extraction operators on chip speed up photonic convolutional neural networks.

We experimentally establish a 3 × 3 cross-shaped micro-ring resonator (MRR) array-based photonic multiplexing architecture relying on silicon photonics to achieve parallel edge extraction operations in images for photonic convolution neural networks. The main mathematical operations involved are convolution. Precisely, a faster convolutional calculation speed of up to four times is achieved by extracting four feature maps simultaneously with the same photonic hardware's structure and power consumption, where a maximum computility of 0.742 TOPS at an energy cost of 48.6 mW and a convolution accuracy of 95.1% is achieved in an MRR array chip. In particular, our experimental results reveal that this system using parallel edge extraction operators instead of universal operators can improve the imaging recognition accuracy for CIFAR-10 dataset by 6.2% within the same computing time, reaching a maximum of 78.7%. This work presents high scalability and efficiency of parallel edge extraction chips, furnishing a novel, to the best of our knowledge, approach to boost photonic computing speed.

On-chip silicon photonic micro-ring processor lights up optical image encryption.

Optical image encryption has long been an important concept in the fields of photonic network processing and communication. Here, we propose a convolution-like operation-based optical image encryption algorithm exploiting a silicon photonic multiplexing architecture to achieve content security. Particularly, the encryption process is completed in a 3 × 3 cross-shaped photonic micro-ring resonator (MRR) array on chip. For the first time, to the best of our knowledge, this algorithm encodes information in an integrated intensity modulation, effectively reducing the encoding difficulty. Moreover, the high reliability and scalability of optical encryption are ensured using both linear and nonlinear operations on photonic chips according to characteristics of MRRs. As the encryption and decryption experiments show, the image restoration accuracy of our optical encryption algorithm exceeds 99% under real system noise at the pixel level, indicating its noise-robust property. Meanwhile, the peak signal-to-noise ratios of the restored and encrypted images are >60 and <15 dB, respectively, revealing both the high accuracy of the restored image and the small correlation between the encrypted and original images. This work adds to the rapidly expanding field of optical image encryption on photonic chips.

Ultrafast resonant exciton-plasmon coupling for enhanced emission in lead halide perovskite with metallic Ag nanostructures.

Integrating metal halide perovskites onto plasmonic nanostructures has recently become a trending method of enabling superior emissive performance of perovskite nanophotonic devices. In this work, we present an in-depth study on the spontaneous emission properties of hybrid systems comprising CsPbBr3 nanocrystals and silver nanostructures. Specifically, a 5.7-fold increment of the photoluminescence (PL) intensity and a 1.65-fold enhancement of the PL relaxation rate is attained when the transition energy of CsPbBr3 is spectrally resonant with the oscillational frequency of Ag nanodisks (NDs), which is attributed to the intense exciton-plasmon coupling-induced Purcell effect. Furthermore, a 540-fs ultrafast energy transfer from the CsPbBr3 excitons to Ag plasmons is revealed by femtosecond pump-probe experiments, suggesting the key mechanism responsible for the Purcell-enhanced radiative emission. Our finding offers a unique understanding of the enhanced emissive behavior in the plasmon-coupled perovskite system and paves the way for further applications.

Enhanced Terahertz Radiation by Efficient Spin-to-Charge Conversion in Rashba-Mediated Dirac Surface States.

The enhancement of terahertz (THz) radiation is of extreme significance for the realization of the THz probe and imaging. However, present THz technologies are far from being enough to realize high-performance and room-temperature THz sources. Fortunately, topological insulators (TIs), with spin-momentum-locked Dirac surface states, are expected to exhibit a high terahertz emission efficiency. In this work, the novel concept of a Rashba-state-enhanced spintronic THz emitter is demonstrated on the basis of ferromagnet/heavy metal/topological insulator (FM/HM/TI) heterostructure. We find that the THz emission intensity changes as a function of HM interlayer thickness, and a 1.98 times higher intensity compared to that of FM/TI can be achieved when a meticulously designed thickness of the HM layer is inserted. The improvement of terahertz radiation is ascribed to the additive effect of Rashba splitting and topological surface states at the HM/TI interface. These results offer new possibilities for realizing spintronic THz emitters in TI-based magnetic heterostructures.

Ultrafast nonlinear absorption enhancement of monolayer MoS2 with plasmonic Au nanoantennas.

In this work, we experimentally study the nonlinear absorption enhancement of saturable absorption and two-photon absorption on a hybrid structure comprising a monolayer MoS2 and Au nanoantennas via femtosecond I-scan measurement. Specifically, a 13-fold increment in the linear absorption coefficient is attained at 1.85 eV, along with an 8-fold enhancement of the two-photon absorption coefficient at 1.65 eV, which is attributed to exciton-plasmon coupling resonance and plasmonic hot electron transfer. The exciton-plasmon coupling effect is characterized by stable photoluminescence experiments. Furthermore, the exciton recombination time is extracted from the pump-probe measurement, whose value in the hybrid structure is shortened from 18.5 ps (pure MoS2) to 1.84 ps. Our findings facilitate a new perspective to modulate the nonlinear optical response and to promote the performance of nonlinear photonic devices.

Ultrafast exciton transfer in perovskite CsPbBr3 quantum dots and topological insulator Bi2Se3 film heterostructure.

Recently, topological insulator based heterostructures (HSs) have attracted tremendous research interest, due to their efficient carrier transfer features at the heterointerface induced by metallic surface states. Here, a novel HS comprising 0D perovskite CsPbBr3 quantum dots (QDs) and 2D material topological insulator Bi2Se3 film is proposed and experimentally investigated. Specifically, steady state and time-resolved photoluminescence (PL) measurements are employed, from which a significant quenching behaviour is observed in the HS, with an average quenching factor of 93.2 ± 0.8%. Additionally, time-resolved PL spectroscopy affirms that the carrier transfer efficiency can be up to 92.6 ± 0.2%. Furthermore, the dynamics of carrier transfer within the 0D-2D HS are characterized by utilizing femtosecond broadband transient absorption (TA) spectroscopy, revealing an ultrafast exciton transfer from photoexcited CsPbBr3 QDs to the Bi2Se3 film with a time-scale around 1.1 ± 0.2 ps. An alternative important finding is that the band renormalization is exhibited in CsPbBr3 QDs of the HS, with the dominant factor being the Coulomb screening effect. This work is expected to provide some fundamental understanding of the ultrafast and efficient carrier transfer mechanism underneath HSs based on topological insulators.

Visualized charge transfer processes in monolayer composition-graded WS2xSe2(1-x) lateral heterojunctions via ultrafast microscopy mapping.

Two-dimensional transitional metal dichalcogenides (TMDCs) based lateral heterojunctions have emerged as appealing and intriguing materials for applications in the next generation flexible nanoelectronics. The construction of depletion region near the in-plane interface brings rich opto-electrical dynamics, which is essential for future applications. Due to the synchronous requirement of spatial and time resolution, the study of lateral heterojunction dynamics remains a challenging issue. Herein, with a home-built spatiotemporal femtosecond transient absorption (TAS) spectroscopy platform, we have investigated the ultrafast photocarrier dynamics of monolayer spatial composition-graded WS2xSe2(1-x) lateral heterojunctions. At the alloy interface, the charge transfer (CT) processes have been visualized and referred to occur in 1 ps time scale. The mobility difference between electrons and holes results in the space modulation of the interface and a significant broadening of rising edge on the shell region. Moreover, carrier lifetime near the interface is extraordinarily extended by over 3 times from 153 ps to 678 ps. All these results unveil its great potential in designing future low cost logic devices and ultrafast optical applications.

Ultrafast saturable absorption of MoS2 nanosheets under different pulse-width excitation conditions.

The newly raised two-dimensional material MoS2 is regarded as an ideal candidate for saturated absorbers. Here, the open-aperture Z-scan method is used to study the saturation absorption (SA) response of monolayer and multilayer MoS2, considering laser irradiation with different pulse widths. Specifically, in cases of 10 ns and 10 ps laser pulses, the accumulative nonlinearity [e.g., free carrier absorption (FCA)] coupled with SA is found in both monolayer and multilayer MoS2. However, under a 65 fs pulse laser, the instantaneous nonlinearity [e.g., two-photon absorption (TPA)] and the SA effect turn to play a significant role. Additionally, the saturation of both TPA and FCA is observed in MoS2. Importantly, the modulation depth of MoS2 shows different change trends by adjusting the laser pulse width.

Optically controlled terahertz modulator by liquid-exfoliated multilayer WS2 nanosheets.

Lack of efficient routes to modulate the propagation properties of the terahertz (THz) wave is a major barrier for the further development of THz technology. In recent years, two dimensional transition metal dichalcogenides (2D TMDCs) were applied to the design of effective THz modulator by forming heterostructure with Si. Here, we experimentally demonstrate an optical controlled THz modulator consisting of liquid-exfoliated WS2 nanosheets and a silicon substrate (WS2-Si). By innovatively depositing liquid-exfoliated WS2 nanosheets on the Si instead of growing by chemical vapor deposition (CVD) method, both of the size and the thickness of WS2 film is controlled. The WS2-Si sample presents a flat modulation depth from 0.2 THz to 1.6 THz. The modulation depth reaches 56.7% under a 50 mW pumping power, which is over 5 times enhanced compared with that of the Si substrate. With the increase of illumination power, the modulation depth continues to increase, finally reaching up to 94.8% under 470 mW. Besides, the WS2-Si sample also achieves ~80% modulation depth under 450 nm illumination, indicating its ability to operate under either of wavelength in visible spectra. Moreover, we compare the sample to the reported modulators including CVD growth TMDCs-Si ones and find our sample has comparable modulation effects while is much easy to be prepared. Therefore, we believe our work is meaningful to provide an alternative route to achieve effective modulation of THz waves by adopting liquid-exfoliated 2D materials.

Thickness-dependent carrier and phonon dynamics of topological insulator Bi2Te3 thin films.

As a new quantum state of matter, topological insulators offer a new platform for exploring new physics, giving rise to fascinating new phenomena and new devices. Lots of novel physical properties of topological insulators have been studied extensively and are attributed to the unique electron-phonon interactions at the surface. Although electron behavior in topological insulators has been studied in detail, electron-phonon interactions at the surface of topological insulators are less understood. In this work, using optical pump-optical probe technology, we performed transient absorbance measurement on Bi2Te3 thin films to study the dynamics of its hot carrier relaxation process and coherent phonon behavior. The excitation and dynamics of phonon modes are observed with a response dependent on the thickness of the samples. The thickness-dependent characteristic time, amplitude and frequency of the damped oscillating signals are acquired by fitting the signal profiles. The results clearly indicate that the electron-hole recombination process gradually become dominant with the increasing thickness which is consistent with our theoretical calculation. In addition, a frequency modulation phenomenon on the high-frequency oscillation signals induced by coherent optical phonons is observed.

Thickness-dependent nonlinear optical properties of CsPbBr3 perovskite nanosheets.

Halide perovskite has attracted significant attention because of excellent optical properties. Here, we study the optical properties of CsPbBr3 perovskite nanosheets and observe that the nonlinear optical properties can be tuned by the thickness. The photoluminescence (PL) properties and nonlinear absorption effects induced by saturation absorption (SA) and two-photon absorption (TPA) in CsPbBr3 nanosheets with different thicknesses (from 104.6 to 195.4 nm) have been studied. The PL intensity increases nearly three times with changing from the thinnest one to the thinnest under the same excitation condition. Moreover, the same phenomenon takes place no matter when SA or TPA effects happen. The PL lifetime (τ) varies inversely with the thickness. When SA happens, τ decreases from 11.54 to 9.43 ns while when TPA happens new decay channels emerge with the increase of the thickness. Besides, both saturation intensity (Isat) and the modulation depth are proportional to the thickness (Isat rises from 3.12 to 4.79 GW/cm2, the modulation depth increases from 18.6% to 32.3%), while the TPA coefficient (ß) is inversely proportional with the thickness (decreases from 10.94 to 4.73 cm/GW). In addition, quantum yields and thicknesses are in the direct ratio. This Letter advocates great promise for nonlinear optical property related photonics devices.

Mode instability dynamics in high-power low-numerical-aperture step-index fiber amplifier.

The study on mode instability (MI) in the large-mode-area fiber is generating great interest regarding the high-power applications of fiber lasers. To the best of our knowledge, we have investigated for the first time the dynamics of the output beam from a kilowatt-level all-fiber amplifier based on the low-numerical-aperture (<0.04) step-index (SI) fiber before and after the onset of the MI, including the temporal dynamics and mode evolution. The temporal power fluctuations indicate three evolution stages apart from the onset threshold of the MI, defined as stable, transition, and chaotic regions. In addition, the mode decomposition technique is utilized to accurately observe and investigate the mode evolution and relevant modal content corresponding to the transition and chaotic regions in the SI fiber laser for the first time. According to the mode decomposition results, the reduction of the extracted power can be explained by the high bending loss of the high-order mode excited in the MI process. Finally, the difference of MI dynamics between the fiber lasers based on the SI fiber and rod-type photonic crystal fiber is discussed.

Adaptive mode control of a few-mode fiber by real-time mode decomposition.

A novel approach to adaptively control the beam profile in a few-mode fiber is experimentally demonstrated. We stress the fiber through an electric-controlled polarization controller, whose driven voltage depends on the current and target modal content difference obtained with the real-time mode decomposition. We have achieved selective excitations of LP01 and LP11 modes, as well as significant improvement of the beam quality factor, which may play crucial roles for high-power fiber lasers, fiber based telecommunication systems and other fundamental researches and applications.

Z-scan measurement of the nonlinear refractive index of monolayer WS(2).

Transition metal dichalcogenides (TMDCs), such as tungsten disulfide (WS(2)), are layered materials with strong in-plane bonding and weak out-of-plane interactions enabling exfoliation into two-dimensional layers of single unit cell thickness. Recent advances in nanoscale materials characterization and few layer TMDCs' unique optical properties make them a research hot-spot in nonlinear optics. In this work, the nonlinear refractive index of monolayer WS(2) has been characterized with Z-scan measurement under 800nm femtosecond pulsed laser excitation, and a value of n2 ≃ (8.1 ± 0.41) × 10(-13)m(2)/W is obtained. A shift from saturable absorption to reverse saturable absorption was observed at higher input pump intensities in the experiments. The transition process was analyzed using a phenomenological model based on two photon absorption, and the two photon absorption coefficient was estimated about (3.7±0.28)×10(-6)m/W.

Real-time mode decomposition for few-mode fiber based on numerical method.

Today a specific attention has been paid to look into the modal characteristics of the high-power laser beam. And the instantaneous monitoring and analyzing on modal content via the mode decomposition technique will provide a novel route. We implement the first-ever experimental investigation on the real-time mode decomposition technique for few-mode laser beam based on stochastic parallel gradient descent algorithm. It will reduce the cost and the complexity of the mode decomposition system. We have succeeded to decompose the mode spectra as well as calculating the beam quality factor at about 9 Hz monitoring rate, while the high agreement between the measured and reconstructed intensity profiles in each frame indicating the high accuracy and stability during the process. By employing a fiber-squeezing-based polarization controller, the modal content under test can be time-varying automatically.

Characterization of nonlinear properties of black phosphorus nanoplatelets with femtosecond pulsed Z-scan measurements.

The nonlinear properties of black phosphorus (BP) nanoplatelets (NPs) have been characterized with Z-scan measurements under 800-nm femtosecond pulsed laser excitation. A transition from saturable absorption (SA) to reverse saturable absorption (RSA) with the increase of laser intensity was observed in the open-aperture (OA) measurements. Simultaneously, closed-aperture (CA) measurements were carried out to investigate the nonlinear refractive index of BP NPs together, and a value of n(2) ≃(6.8±0.2)×10(-13) m2/W was obtained. The nonlinear absorption properties were analyzed according to the band structure of BP. A theoretical analysis based on SA and two-photon absorption (TPA) was used to determine the nonlinear absorption coefficients from the experimental results, and the TPA coefficient at 800 nm was estimated about (4.5±0.2)×10(-10) m/W.

Thulium/holmium-doped fiber laser passively mode locked by black phosphorus nanoplatelets-based saturable absorber.

By coupling black phosphorus (BP) nanoplatelets (NPs) with a fiber-taper evanescent light field, a saturable absorber (SA) based on the BP NPs has been successfully fabricated and used in a thulium/holmium-doped fiber laser as the mode locker. The SA had a modulation depth of ∼9.8% measured at 1.93 µm. A stable mode-locking operation at 1898 nm was achieved with a pulse width of 1.58 ps and a fundamental mode-lock repetition rate of 19.2 MHz. By increasing the pump intensity, phenomena of multi-pulsing operations, including harmonic mode-locked states and soliton bunches, were obtained in the experiment, showing that the BP NPs possess an ultrafast optical response time. This work suggests that the BP NPs-based SA is potentially useful for ultrashort, pulsed laser operations in the eye-safe region of 2 µm.

Creating Anti-Chiral Exceptional Points in Non-Hermitian Metasurfaces for Efficient Terahertz Switching.

Non-Hermitian degeneracies, also known as exceptional points (EPs), have presented remarkable singular characteristics such as the degeneracy of eigenvalues and eigenstates and enable limitless opportunities for achieving fascinating phenomena in EP photonic systems. Here, the general theoretical framework and experimental verification of a non-Hermitian metasurface that holds a pair of anti-chiral EPs are proposed as a novel approach for efficient terahertz (THz) switching. First, based on the Pancharatnam-Berry (PB) phase and unitary transformation, it is discovered that the coupling variation of ±1 spin eigenstates will lead to asymmetric modulation in two orthogonal linear polarizations (LP). Through loss-induced merging of a pair of anti-chiral EPs, the decoupling of ±1 spin eigenstates are then successfully realized in a non-Hermitian metasurface. Final, the efficient THz modulation is experimentally demonstrated, which exhibits modulation depth exceeding 70% and Off-On-Off switching cycle less than 9 ps in one LP while remains unaffected in another one. Compared with conventional THz modulation devices, the metadevice shows several figures of merits, such as a single frequency operation, high modulation depth, and ultrafast switching speed. The proposed theory and loss-induced non-Hermitian device are general and can be extended to numerous photonic systems varying from microwave, THz, infrared, to visible light.

Color coded metadevices toward programmed terahertz switching.

Terahertz modulators play a critical role in high-speed wireless communication, non-destructive imaging, and so on, which have attracted a large amount of research interest. Nevertheless, all-optical terahertz modulation, an ultrafast dynamical control approach, remains to be limited in terms of encoding and multifunction. Here we experimentally demonstrated an optical-programmed terahertz switching realized by combining optical metasurfaces with the terahertz metasurface, resulting in 2-bit dual-channel terahertz encoding. The terahertz metasurface, made up of semiconductor islands and artificial microstructures, enables effective all-optical programming by providing multiple frequency channels with ultrafast modulation at the nanosecond level. Meanwhile, optical metasurfaces covered in terahertz metasurface alter the spatial light field distribution to obtain color code. According to the time-domain coupled mode theory analysis, the energy dissipation modes in terahertz metasurface can be independently controlled by color excitation, which explains the principle of 2-bit encoding well. This work establishes a platform for all-optical programmed terahertz metadevices and may further advance the application of composite metasurface in terahertz manipulation.

Electric-induced oxide breakdown of a charge-coupled device under femtosecond laser irradiation.

A femtosecond laser provides an ideal source to investigate the laser-induced damage of a charge-coupled device (CCD) owing to its thermal-free and localized damage properties. For conventional damage mechanisms in the nanosecond laser regime, a leakage current and degradation of a point spread function or modulation transfer function of the CCD are caused by the thermal damages to the oxide and adjacent electrodes. However, the damage mechanisms are quite different for a femtosecond laser. In this paper, an area CCD was subjected to Ti: sapphire laser irradiation at 800 nm by 100 fs single pulses. Electric-induced oxide breakdown is considered to be the primary mechanism to cause a leakage current, and the injured oxide is between the gate and source in the metal-oxide semiconductor field-effect transistor (MOSFET) structure for one CCD pixel. Optical microscopy and scanning electron microscopy are used to investigate the damaged areas and the results show that the electrodes and the oxide underneath are not directly affected by the femtosecond laser, which helps to get rid of the conventional damage mechanisms. For the primary damage mechanism, direct damage by hot carriers, anode hole injection, and an enlarged electric field in the insulating layer are three possible ways to cause oxide breakdown. The leakage current is proved by the decrease of the resistance of electrodes to the substrate. The output saturated images and the dynamics of an area CCD indicate that the leakage current is from an electrode to a light sensing area (or gate to source for a MOSFET), which proves the oxide breakdown mechanism.