Unrevealing Temporal Mechanoluminescence Behaviors at High Frequency via Piezoelectric Actuation.

Mechanoluminescence (ML) materials present widespread applications. Empirically, modulation for a given ML material is achieved by application of programmed mechanical actuation with different amplitude, repetition velocity and frequency. However, to date modulation on the ML is very limited within several to a few hundred hertz low-frequency actuation range, due to the paucity of high-frequency mechanical excitation apparatus. The universality of temporal behavior and frequency response is an important aspect of ML phenomena, and serves as the impetus for much of its applications. Here, we push the study on ML into high-frequency range (∼250 kHz) by combining with piezoelectric actuators. Two representative ML ZnS:Mn and ZnS:Cu, Al phosphors were chosen as the research objects. Time-resolved ML of ZnS:Mn and ZnS:Cu, Al shows unrevealed frequency-dependent saturation and quenching, which is associated with the dynamic processes of traps. From the point of applications, this study sets the cut-off frequency for ML sensing. Moreover, by in-situ tuning the strain frequency, ZnS:Mn exhibits reversible frequency-induced broad red-shift into near-infrared range. These findings offer keen insight into the photophysics nature of ML and also broaden the physical modulation of ML by locally adjusting the excitation frequency.

Si-integrated lanthanide-doped ferroelectrics for a photomemory based on a photochromic reaction.

We describe a Si-integrated photochromic photomemory based on lanthanide-doped ferroelectric Na0.5Bi2.5Nb2O9:Er3+ (NBN:Er) thin films. We show that upconversion emission can be effectively modulated by up to 78% through the photochromic reaction. The coupling between lanthanide upconversion emission and the photochromic effect ensures rewritable and nondestructive readout characteristics. Moreover, integrating photochromic thin films with Si would benefit from its compatibility with the mature complementary metal-oxide semiconductor (CMOS) technique. These results demonstrate the opportunity to develop more compact photochromic photomemories and related photonic devices.

Control of upconversion luminescence by tailoring energy migration in doped perovskite superlattices.

We describe an experimental investigation of photon upconversion (UC) in a series of perovskite BaTiO3/SrTiO3 superlattices doped with different lanthanide compositions. We show that UC emission can be effectively enhanced by precisely incorporating a set of lanthanide ions into separated layers rather than homogeneously distributing the dopant ions in the host lattice. The use of an inert layer in the superlattice can suppress deleterious energy cross-relaxation. Furthermore, UC emission can be rendered by controlling the energy migration mediated by the Yb-doped sublattice. These results demonstrate the opportunity to modulate energy migration and transfer processes through the rational design of superlattice structures.

Mechanically induced enhancement and modulation of upconversion photoluminescence by bending lanthanide-doped perovskite oxides.

We report experimental studies of the bending strain impact on the upconversion processes in Yb3+, Er3+, and Mn2+ co-doped BaTiO3 (BTO) thin films with mica as the flexible substrate. Bending strain induces strong enhancement and modulation of the upconversion emission in doped BTO thin films. Because the unshielded 3d5 configuration of Mn2+ is more susceptible to crystal field changes, the introduction of an Mn2+ ion further promotes the strain-induced modulation effect. The upconversion intensity is amplified by six times at bending strain ε = 1.83% in BTO:Yb3+/Er3+/Mn2+ thin films. These results demonstrate the opportunity of rendering an upconversion emission through integrating lanthanide-doped ferroelectric films with flexible mica, especially by incorporating an Mn2+ ion.

Mucosal expression of defensin-5, soluble phospholipase A2 and lysozyme in the intestine in a rat model of acute liver failure and its relationship to intestinal bacterial translocation.

INTRODUCTION: To study the expression of defensin-5 (RD-5), soluble phospholipase A2 (sPLA2) and lysozyme in the intestine in a rat model of acute liver failure and its relationship with intestinal bacterial translocation (BT). PATIENTS AND METHODS: Sprague-Dawley (SD) rats were divided into two groups. The experimental group was divided into five subgroups according to the lapsing time after the model was established, which were designated accordingly as 8h, 16h, 24h, 48h, and 72h groups. Acute liver failure (ALF) model was induced by intraperitoneal injection of 10% d-galactosamine. The homogenates of mesenteric lymph nodes (MLNs), liver and spleen from each group were cultured in agar to determine the bacterial outgrowth. The mRNA expression of RD-5, sPLA2, lysozyme and the protein expression of sPLA2, lysozyme were determined. RESULTS: No bacteria grew in the organ cultures from the control group while experimental groups had positive cultures. Expression of the RD-5 and sPLA2 mRNA in the experimental groups gradually increased at early time points and peaked 16h after induction of ALF, then progressively decreased. The mRNA expression of lysozyme in the experimental group peaked at 8h after ALF induction, then progressively decreased. Similar results were obtained with Western blot and immunohistochemical staining. DISCUSSION: The immune barrier function of the ileal mucosa in the rat model of acute liver failure was compromised as demonstrated by the decreased expression of RD-5, sPLA2 and lysozyme in Paneth cells along with increased intestinal bacterial translocation.

Fabrication of cerium-doped ß-Ga2O3 epitaxial thin films and deep ultraviolet photodetectors.

High-quality cerium-doped ß-Ga2O3 (Ga2O3:Ce) thin films could be achieved on (0001)α-Al2O3 substrates using a pulsed-laser deposition method. The impact of dopant contents concentration on crystal structure, optical absorption, photoluminescence, and photoelectric properties has been intensively studied. X-ray diffraction analysis results have shown that Ga2O3:Ce films are highly (2¯01) oriented, and the lattice spacing of the (4¯02) planes is sensitive to the Ce doping level. The prepared Ga2O3:Ce films show a sharp absorption edge at about 250 nm, meaning a high transparency to deep ultraviolet (DUV) light. The photoluminescence results revealed that the emissions were in the violet-blue-green region, which are associated with the donor-acceptor transitions with the Ce3+ and oxygen vacancies related defects. A simple DUV photodetector device with a metal-semiconductor-metal structure has also been fabricated based on Ga2O3:Ce thin film. A distinct DUV photoresponse was obtained, suggesting a potential application in DUV photodetector devices.

Effect of biaxial strain induced by piezoelectric PMN-PT on the upconversion photoluminescence of BaTiO3:Yb/Er thin films.

Thin films of Yb3+/Er3+ co-doped BaTiO3 (BTO:Yb/Er) have been epitaxially grown on piezoelectric Pb(Mg1/3Nb2/3)0.7Ti0.3O3 (PMN-PT) substrates. Biaxial strain can be effectively controlled by applying electric field on PMN-PT substrate. A reversible, in situ and dynamic modification of upconversion photoluminescence in BTO:Yb/Er film was observed via converse piezoelectric effect. Detailed analysis and in situ X-ray diffraction indicate that such modulations are possibly due to the change in the lattice deformation of the thin films. This result suggests an alternative method to rationally tune the upconversion emissions via strain engineering.

Multi-Mode Luminescence in Smart Near-Infrared Cr3+/Pr3+ Codoped SrGa12O19 Phosphors Induced by Three Distinct Excitation Mechanisms.

Near-infrared (NIR) phosphors have emerged as novel luminescent materials across various fields due to their unique advantages of high penetration and invisibility. However, there is currently a lack of intelligent NIR phosphors that can achieve multimode stimuli responsive for sensing applications. In this study, we employed a high-temperature solid-phase reaction to incorporate Pr3+ into Cr3+-doped gallate magnetite SrGa12O19 phosphor, yielding a multimode luminescent intelligent NIR phosphor. Also, due to the inherent cation vacancies and defects in the matrix, the material not only exhibits brighter photoluminescence but also exhibits distinct NIR mechanoluminescence at a lower load. Notably, Pr3+-doped SrGa12O19:Cr3+ also demonstrates extended persistent luminescence and thermoluminescence effects. Finally, we combined the phosphor with the blue LED chip to develop a new multifunctional NIR pc-LED. Leveraging NIR's unique penetrating ability, it can persist in biological tissues for prolonged periods, enabling optical inspection and offering a novel approach to password protection for anticounterfeiting measures. This intelligent NIR phosphor solution significantly expands the application potential of NIR light in food quality assessment and analysis.

Sensitive and rapid identification of pathogens by droplet digital PCR in a cohort of septic patients: a prospective diagnostic study.

BACKGROUND: There is a critical need for a rapid and sensitive pathogen detection method for septic patients. This study aimed to investigate the diagnostic efficacy of Digital droplet polymerase chain reaction (ddPCR) in identifying pathogens among suspected septic patients. METHODS: We conducted a prospective pilot diagnostic study to clinically validate the multiplex ddPCR panel in diagnosing suspected septic patients. A total of 100 sepsis episodes of 89 patients were included in the study. RESULTS: In comparison to blood culture, the ddPCR panel exhibited an overall sensitivity of 75.0% and a specificity of 69.7%, ddPCR yielded an additional detection rate of 17.0% for sepsis cases overall, with a turnaround time of 2.5 h. The sensitivity of ddPCR in the empirical antibiotic treatment and the non-empirical antibiotic treatment group were 78.6% versus 80.0% (p > 0.05). Antimicrobial resistance genes were identified in a total of 13 samples. Whenever ddPCR detected the genes beta-lactamase-Klebsiella pneumoniae carbapenemase (blaKPC) or beta-lactamase-New Delhi metallo (blaNDM), these findings corresponded to the cultivation of carbapenem-resistant gram-negative bacteria. Dynamic ddPCR monitoring revealed a consistent alignment between the quantitative ddPCR results and the trends observed in C-reactive protein and procalcitonin levels. CONCLUSIONS: Compared to blood culture, ddPCR exhibited higher sensitivity for pathogen diagnosis in suspected septic patients, and it provided pathogen and drug resistance information in a shorter time. The quantitative results of ddPCR generally aligned with the trends seen in C-reactive protein and procalcitonin levels, indicating that ddPCR can serve as a dynamic monitoring tool for pathogen load in septic patients.

Comparison of the clinical efficacy and toxicity of nebulized polymyxin monotherapy and combined intravenous and nebulized polymyxin for the treatment of ventilator-associated pneumonia caused by carbapenem-resistant gram-negative bacteria: a retrospective cohort study.

Objective: To investigate the clinical efficacy and toxicity of nebulized polymyxin monotherapy and combined intravenous and nebulized polymyxin for the treatment of VAP caused by CR-GNB. Additionally, among patients treated with nebulized polymyxin monotherapy, we compared the clinical efficacy and toxicity of polymyxin B and polymyxin E. Methods: This study was a single-center, retrospective study. Included patients received aerosolized polymyxin for at least 72 h with or without intravenous polymyxin for the management of CR-GNB VAP. The primary endpoint was clinical cure at the end of polymyxin therapy. Secondary endpoints included AKI incidence, time of bacteria-negative conversion, duration of MV after inclusion, length of stay in ICU, and all-cause ICU mortality. Results: 39 patients treated with nebulized polymyxin monotherapy were assigned to the NL-polymyxin group. 39 patients treated with nebulized polymyxin combined with intravenous use of polymyxin were assigned to the IV-NL-polymyxin group. Among the NL-polymyxin group, 19 patients were treated with polymyxin B and 20 with polymyxin E. The clinical baseline characteristics before admission to the ICU and before nebulization of polymyxin were similar between the two groups. No differences were found between the two study groups in terms of microorganism distribution, VAP cure rate, time of bacteria-negative conversion, duration of MV after inclusion, length of stay in ICU and all-cause ICU mortality. Similarly, survival analysis did not differ between the two groups (χ2 = 3.539, p = 0.06). AKI incidence was higher in the IV-NL-polymyxin group. When comparing the clinical efficacy and toxicity to polymyxin B and polymyxin E, there was no difference between the two groups in terms of VAP cure rate, time of bacteria-negative conversion, duration of MV after inclusion, length of stay in ICU, SOFA score, CPIS, AKI incidence and all-cause ICU mortality. Conclusion: Our study found that nebulized polymyxin monotherapy was non-inferior to combination therapy with intravenous polymyxin in treating CR-GNB-VAP. Furthermore, we observed no differences in clinical efficacy or related toxic side effects between polymyxin B and polymyxin E during nebulized polymyxin therapy as monotherapy. However, future prospective studies with larger sample sizes are required to confirm these findings.

Recent Progress in Strain Engineering on Van der Waals 2D Materials: Tunable Electrical, Electrochemical, Magnetic, and Optical Properties.

Strain engineering is a promising way to tune the electrical, electrochemical, magnetic, and optical properties of 2D materials, with the potential to achieve high-performance 2D-material-based devices ultimately. This review discusses the experimental and theoretical results from recent advances in the strain engineering of 2D materials. Some novel methods to induce strain are summarized and then the tunable electrical and optical/optoelectronic properties of 2D materials via strain engineering are highlighted, including particularly the previously less-discussed strain tuning of superconducting, magnetic, and electrochemical properties. Also, future perspectives of strain engineering are given for its potential applications in functional devices. The state of the survey presents the ever-increasing advantages and popularity of strain engineering for tuning properties of 2D materials. Suggestions and insights for further research and applications in optical, electronic, and spintronic devices are provided.

Enhanced gain and detectivity of unipolar barrier solar blind avalanche photodetector via lattice and band engineering.

Ga2O3-based solar blind avalanche photodetectors exhibit low voltage operation, optical filter-free and monolithic integration of photodetector arrays, and therefore they are promising to be an alternative to the bulky and fragile photomultiplier tubes for weak signal detection in deep-ultraviolet region. Here, by deliberate lattice and band engineering, we construct an n-Barrier-n unipolar barrier avalanche photodetector consisting of ß-Ga2O3/MgO/Nb:SrTiO3 heterostructure, in which the enlarged conduction band offsets fortify the reverse breakdown and suppress the dark current while the negligible valance band offsets faciliate minority carrier flow across the heterojunction. The developed devices exhibit record-high avalanche gain up to 5.9 × 105 and detectivity of 2.33 × 1016 Jones among the reported wafer-scale grown Ga2O3-based photodetectors, which are even comparable to the commercial photomultiplier tubes. These findings provide insights into precise manipulation of band alignment in avalanche photodetectors, and also offer exciting opportunities for further developing high-performance Ga2O3-based electronics and optoelectronics.

Over 5 × 103-Fold Enhancement of Responsivity in Ga2O3-Based Solar Blind Photodetector via Acousto-Photoelectric Coupling.

The emergence of the wide-band-gap semiconductor Ga2O3 has propelled it to the forefront of solar blind detection activity owing to its key features. Although various architectures and designs of Ga2O3-based solar blind photodetectors have been proposed, their performance still falls short of commercial standards. In this study, we demonstrate a method to enhance the performance of a simple metal-semiconductor-metal-structured Ga2O3-based solar blind photodetector by exciting acoustic surface waves. Specifically, we demonstrate that under a bias voltage of 100 mV and a radio frequency signal of 20 dBm, the responsivity and detectivity can increase from 2.78 to 1.65 × 104 A/W and from 8.35 × 1014 to 2.66 × 1016 jones, respectively, rivaling a commercial photomultiplier tube. The over 5 × 103-fold enhancement in responsivity could be attributed to the acousto-photoelectric coupling mechanism. Furthermore, since surface acoustic waves can also serve as signal receivers, such photodetectors offer the prospect of dual-mode detection. Our findings reveal a promising pathway for achieving high-performance Ga2O3-based electronics and optoelectronics.

Observation of Moiré Patterns in Twisted Stacks of Bilayer Perovskite Oxide Nanomembranes with Various Lattice Symmetries.

The design and fabrication of novel quantum devices in which exotic phenomena arise from moiré physics have sparked a new race of conceptualization and creation of artificial lattice structures. This interest is further extended to the research on thin-film transition metal oxides, with the goal of synthesizing twisted layers of perovskite oxides concurrently revealing moiré landscapes. By utilizing a sacrificial-layer-based approach, we show that such high-quality twisted bilayer oxide nanomembrane structures can be achieved. We observe atomic-scale distinct moiré patterns directly formed with different twist angles, and the symmetry-inequivalent nanomembranes can be stacked together to constitute new complex moiré configurations. This study paves the way to the construction of higher-order artificial oxide heterostructures based on different materials/symmetries and provides the materials foundation for investigating moiré-related electronic effects in an expanded selection of twisted oxide thin films.

Electrical Characterizations of Planar Ga2O3 Schottky Barrier Diodes.

In this work, a Schottky barrier diode (SBD) is fabricated and demonstrated based on the edge-defined film-fed grown (EFG) Ga2O3 crystal substrate. At the current stage, for high resistance un-doped Ga2O3 films and/or bulk substrates, the carrier concentration (and other electrical parameters) is difficult to be obtained by using the conventional Hall measurement. Therefore, we extracted the electrical parameters such as on-state resistance (Ron), Schottky barrier height (ϕB), the ideal factor (n), series resistance (Rs) and the carrier concentration (Nd) by analyzing the current density-voltage (J-V) and capacitance-voltage (C-V) curves of the Ga2O3-based SBD, systematically. The detailed measurements and theoretical analysis are displayed in this paper.

Large Tuning of Electroresistance in an Electromagnetic Device Structure Based on the Ferromagnetic-Piezoelectric Interface.

The electrical control of the conducting state through phase transition and/or resistivity switching in heterostructures of strongly correlated oxides is at the core of the large on-going research activity of fundamental and applied interest. In an electromechanical device made of a ferromagnetic-piezoelectric heterostructure, we observe an anomalous negative electroresistance of ∼-282% and a significant tuning of the metal-to-insulator transition temperature when an electric field is applied across the piezoelectric. Supported by finite-element simulations, we identify the electric field applied along the conducting bridge of the device as the plausible origin: stretching the underlying piezoelectric substrate gives rise to a lattice distortion of the ferromagnetic manganite overlayer through epitaxial strain. Large modulations of the resistance are also observed by applying static dc voltages across the thickness of the piezoelectric substrate. These results indicate that the emergent electronic phase separation in the manganites can be selectively manipulated when interfacing with a piezoelectric material, which offers great opportunities in designing oxide-based electromechanical devices.

Ultrahigh Gain Solar Blind Avalanche Photodetector Using an Amorphous Ga2O3-Based Heterojunction.

Solar blind photodetectors with a cutoff wavelength within the 200-280 nm region is attracting much attention due to their potential civilian and military applications. The avalanche photodetectors (APDs) formed based on wide-bandgap semiconductor Ga2O3 are expected to meet emerging technological demands. These devices, however, suffer from limitations associated with the quality of as-grown Ga2O3 or the difficulty in alleviating the defects and dislocations. Herein, high-performance APDs incorporating amorphous Ga2O3 (a-Ga2O3)/ITO heterojunction as the central element have been reliably fabricated at room temperature. The a-Ga2O3-based APDs exhibits an ultrahigh responsivity of 5.9 × 104 A/W, specific detectivity of 1.8 × 1014 Jones, and an external quantum efficiency up to 2.9 × 107% under 254 nm light irradiation at 40 V reverse bias. Notably, the gain could reach 6.8 × 104, indicating the outstanding capability for ultraweak signals detection. The comprehensive superior capabilities of the a-Ga2O3-based APDs can be ascribed to the intrinsic carrier transport manners in a-Ga2O3 as well as the modified band alignment at the heterojunctions. The trade-off between low processing temperature and superior characteristics of a-Ga2O3 promises greater design freedom for realization of wide applications of emerging semiconductor Ga2O3 with even better performance since relieving the burden on the integration progress.

A Spiro-MeOTAD/Ga2O3/Si p-i-n Junction Featuring Enhanced Self-Powered Solar-Blind Sensing via Balancing Absorption of Photons and Separation of Photogenerated Carriers.

Solar blind ultraviolet (SBUV) self-powered photodetectors (PDs) have a great number of applications in civil and military exploration. Ga2O3 is a prospective candidate for SBUV detection owing to its reasonable bandgap corresponding to the SBUV waveband. Nevertheless, the previously reported Ga2O3 photovoltaic devices had low photoresponse performance and were still far from the demands of practical application. Herein, we propose an idea of using spiro-MeOTAD (spiro) as the SBUV transparent conductive layer to construct p-i-n PDs (p-spiro/Ga2O3/n-Si). With the aid of double built-in electric fields, the designed p-i-n PDs could operate without any external power source. Furtherly, the influence of spiro thickness on improving the photoelectric performance of devices is investigated in detail and the optimum device is achieved, translating to a peak responsivity of 192 mA/W upon a weak 254 nm light illumination of 2 µW/cm2 at zero bias. In addition, the I-t curve of our PD shows binary response characteristics and a four-stage current response behavior under a small forward bias, and also, its underlying working mechanism is analyzed. In sum, this newly developed device presents great potential for booming the high energy-efficient optoelectronic devices in the short run.

In situ and tunable structuring of semiconductor-in-glass transparent composite.

Semiconductor-in-glass composites are an exciting class of photonic materials for various fundamental applications. The significant challenge is the scalable elaboration of composite with the desirable combination of tunable structure, high semiconductor loading ratio, and excellent transparency. Here we report that the topological engineering strategy via hybridization of the glass network former enables to surmount the aforementioned challenge. It not only facilitates the in situ precipitation of (Ga2-xAlx)O3 domains with continuously tunable composition but also allows to simultaneously refine the grain size and enhance the crystallinity. In addition, the composites exhibit excellent transparency and can host various active dopants. We demonstrate the attractive broadband optical response of the composite and achieve the pulse laser operation in mid-infrared waveband. The findings are expected to provide a fundamental principle of in situ modification in hybrid system for generation of high-performance semiconductor-in-glass composites.

Broadband Ultraviolet Self-Powered Photodetector Constructed on Exfoliated ß-Ga2O3/CuI Core-Shell Microwire Heterojunction with Superior Reliability.

A heterojunction is an essential strategy for multispectral energy-conservation photodetection for its ability to separate photogenerated electron-hole pairs and tune the absorption edge by selecting semiconductors with appropriate bandgaps. A broadband ultraviolet (200-410 nm) self-powered photodetector is constructed on the exfoliated ß-Ga2O3/CuI core-shell microwire heterostructure. Benefiting from the photovoltaic and photoconductive effects, our device performs an excellent ultraviolet (UV) discriminability with a UVC/visible rejection ratio (R225/R600) of 8.8 × 103 and a UVA/visible rejection ratio (R400/R600) of 2.7 × 102, and a self-powered photodetection with a responsivity of 8.46 mA/W, a detectivity of 7.75 × 1011 Jones, an on/off switching ratio of 4.0 × 103, and a raise/decay speed of 97.8/28.9 ms under UVC light. Even without encapsulation, the photodetector keeps a superior stability over ten months. The intrinsically physical insights of the device behaviors are investigated via energy band diagrams, and the charge carrier transfer characteristics of the ß-Ga2O3/CuI interface are predicted by first principle calculation.