Detalhe da pesquisa
1.
Towards a 3D GeSbTe phase change memory with integrated selector by non-aqueous electrodeposition.
Faraday Discuss
; 213(0): 339-355, 2019 02 18.
Artigo
em Inglês
| MEDLINE | ID: mdl-30411749
2.
Conductive-bridge memory cells based on a nanoporous electrodeposited GeSbTe alloy.
Nanotechnology
; 30(2): 025202, 2019 Jan 11.
Artigo
em Inglês
| MEDLINE | ID: mdl-30382029
3.
Phase-change memories (PCM) - Experiments and modelling: general discussion.
Faraday Discuss
; 213(0): 393-420, 2019 02 18.
Artigo
em Inglês
| MEDLINE | ID: mdl-30697618
4.
Electrochemical metallization ReRAMs (ECM) - Experiments and modelling: general discussion.
Faraday Discuss
; 213(0): 115-150, 2019 02 18.
Artigo
em Inglês
| MEDLINE | ID: mdl-30663725
5.
Tunable Neuromorphic Switching Dynamics via Porosity Control in Mesoporous Silica Diffusive Memristors.
ACS Appl Mater Interfaces
; 16(13): 16641-16652, 2024 Apr 03.
Artigo
em Inglês
| MEDLINE | ID: mdl-38494599
6.
Film before aggregates: an operando GISAXS study on electrochemically assisted surfactant assembly.
Nanoscale
; 16(8): 4197-4204, 2024 Feb 22.
Artigo
em Inglês
| MEDLINE | ID: mdl-38324330
7.
Fractal-like gold nanonetworks formed by templated electrodeposition through 3D-mesoporous silica films.
RSC Adv
; 13(46): 32660-32671, 2023 Oct 31.
Artigo
em Inglês
| MEDLINE | ID: mdl-37936637
8.
Tungsten(VI) selenide tetrachloride, WSeCl4 - synthesis, properties, coordination complexes and application of [WSeCl4(SenBu2)] for CVD growth of WSe2 thin films.
Dalton Trans
; 51(6): 2400-2412, 2022 Feb 08.
Artigo
em Inglês
| MEDLINE | ID: mdl-35044401
9.
AC-assisted deposition of aggregate free silica films with vertical pore structure.
Nanoscale
; 14(14): 5404-5411, 2022 Apr 07.
Artigo
em Inglês
| MEDLINE | ID: mdl-35320330
10.
3D-structured mesoporous silica memristors for neuromorphic switching and reservoir computing.
Nanoscale
; 14(46): 17170-17181, 2022 Dec 01.
Artigo
em Inglês
| MEDLINE | ID: mdl-36380717
11.
Flexible Memristor Devices Using Hybrid Polymer/Electrodeposited GeSbTe Nanoscale Thin Films.
ACS Appl Nano Mater
; 5(12): 17711-17720, 2022 Dec 23.
Artigo
em Inglês
| MEDLINE | ID: mdl-36583121
12.
Confining the growth of mesoporous silica films into nanospaces: towards surface nanopatterning.
Nanoscale Adv
; 4(4): 1105-1111, 2022 Feb 15.
Artigo
em Inglês
| MEDLINE | ID: mdl-36131765
13.
Low temperature CVD of thermoelectric SnTe thin films from the single source precursor, [nBu3Sn(TenBu)].
Dalton Trans
; 50(3): 998-1006, 2021 Jan 27.
Artigo
em Inglês
| MEDLINE | ID: mdl-33355323
14.
Low-Pressure CVD of GeE (E = Te, Se, S) Thin Films from Alkylgermanium Chalcogenolate Precursors and Effect of Deposition Temperature on the Thermoelectric Performance of GeTe.
ACS Appl Mater Interfaces
; 13(40): 47773-47783, 2021 Oct 13.
Artigo
em Inglês
| MEDLINE | ID: mdl-34606236
15.
Poly(N-isopropylacrylamide) based thin microgel films for use in cell culture applications.
Sci Rep
; 10(1): 6126, 2020 04 09.
Artigo
em Inglês
| MEDLINE | ID: mdl-32273560
16.
Thioether complexes of WSCl4, WOCl4 and WSCl3 and evaluation of thiochloride complexes as CVD precursors for WS2 thin films.
Dalton Trans
; 49(8): 2496-2504, 2020 Feb 25.
Artigo
em Inglês
| MEDLINE | ID: mdl-32022094
17.
Thermoelectric Properties of Bismuth Telluride Thin Films Electrodeposited from a Nonaqueous Solution.
ACS Omega
; 5(24): 14679-14688, 2020 Jun 23.
Artigo
em Inglês
| MEDLINE | ID: mdl-32596605
18.
[Ge(TenBu)4] - a single source precursor for the chemical vapour deposition of germanium telluride thin films.
Dalton Trans
; 48(1): 117-124, 2018 Dec 18.
Artigo
em Inglês
| MEDLINE | ID: mdl-30468211
19.
Tin(iv) chalcogenoether complexes as single source precursors for the chemical vapour deposition of SnE2 and SnE (E = S, Se) thin films.
Dalton Trans
; 47(8): 2628-2637, 2018 Feb 20.
Artigo
em Inglês
| MEDLINE | ID: mdl-29393953
20.
Fermi Level Tuning of ZnO Films Through Supercycled Atomic Layer Deposition.
Nanoscale Res Lett
; 12(1): 541, 2017 Sep 19.
Artigo
em Inglês
| MEDLINE | ID: mdl-28929410