Photoluminescence characterization of wetting layer and carrier dynamics for coupled InGaAs/GaAs surface quantum dot pair structures.

The optical properties are investigated by spectroscopic characterizations for bilayer InGaAs/GaAs quantum dot (QD) structures consisting of a layer of surface quantum dots (SQDs) separated from a layer of buried quantum dots (BQDs) by different GaAs spacers with thicknesses of 7 nm, 10.5 nm and 70 nm. The coupling from the BQDs to SQDs leads to carrier transfer for the two samples with thin spacers, 7 nm and 10.5 nm, in which QD pairs are obtained while not for the 70 nm spacer sample. The carrier tunneling time is measured to be 0.145 ns and 0.275 ns from BQDs to SQD through the 7 nm and 10.5 nm spacers, respectively. A weak emission band can be observed at the wavelength of ∼ 960 nm, while the excitation intensity dependent PL and PLE spectra show that this is from the wetting layer (WL) of the SQDs. This WL is very important for carrier dynamics in bilayer structures of BQDs and SQDs, including for carrier generation, capture, relaxation, tunneling, and recombination. These results provide useful information for understanding the optical properties of InGaAs SQDs and for using such hybrid structures as building blocks for surface sensing devices.

Type-II GaSb quantum dots grown on InAlAs/InP (001) by droplet epitaxy.

GaSb quantum dots (QDs) have been grown by droplet epitaxy within InAlAs barrier layers on an InP (001) substrate. The droplet growth mode facilitates a larger size (average height ∼4.5 nm) and a lower density (∼6.3 × 109 cm-2) for the QDs than would be expected for the 4% lattice mismatch between GaSb and InAlAs. A type-II band alignment between the GaSb QDs and the InAlAs barriers is revealed by photoluminescence (PL) through a prominent blue-shift of ∼0.11 eV resulting from a six orders of magnitude increase in excitation power. Further confirmation of the type-II nature of these QDs is found through time-resolved PL studies showing a biexponential decay with a long carrier lifetime of ∼10.9 ns. These observations reveal new information for understanding the formation and properties of GaSb/InAlAs/InP QDs, which may be an optimum system for the development of both efficient memory cells and photovoltaic devices.

Correlation between photoluminescence and morphology for single layer self-assembled InGaAs/GaAs quantum dots.

Single layer self-assembled InGaAs quantum dots (QDs) are manipulated by using different arsenic species on GaAs (100) surface. The As4 molecules are experimentally observed to be more promising than As2 to promote the formation of one-dimensionally-aligned QD-chain arrays. The lateral alignment of QDs and the corresponding formation of dot chains are explained by the anisotropic surface kinetics in combination with the different reactivities of the two molecules with bonding sites on the GaAs (100) surface. Photoluminescence (PL) measurements demonstrate that the spectra of the QD-chains broaden to higher energy and increases in intensity with increasing excitation laser power. The PL band of the QD-chains also exhibits a 9 meV reduction in linewidth as temperature increases starting from 8 K. These observations confirm an efficient lateral coupling between neighboring QDs and thereafter polarized QD emission, whereas the randomly distributed QDs grown with As2 show no preferential polarization. Such QD-chains exhibiting anisotropic properties have the potential for nanophotonics applications like electro-optic modulators with very low drive voltage and ultra-wide bandwidth operation.

Non-avalanche single photon detection without carrier transit-time delay through quantum capacitive coupling.

Searching for innovative approaches to detect single photons remains at the center of science and technology for decades. This paper proposes a zero transit-time, non-avalanche quantum capacitive photodetector to register single photons. In this detector, the absorption of a single photon changes the wave function of a single electron trapped in a quantum dot (QD), leading to a charge density redistribution nearby. This redistribution translates into a voltage signal through capacitive coupling between the QD and the measurement probe. Using InAs QD/AlAs barrier as a model system, the simulation shows that the output signal reaches ~4 mV per absorbed photon, promising for high-sensitivity, ps single-photon detection.

Investigation of electrically active defects in InGaAs quantum wire intermediate-band solar cells using deep-level transient spectroscopy technique.

InGaAs quantum wire (QWr) intermediate-band solar cell-based nanostructures grown by molecular beam epitaxy are studied. The electrical and interface properties of these solar cell devices, as determined by current-voltage (I-V) and capacitance-voltage (C-V) techniques, were found to change with temperature over a wide range of 20-340 K. The electron and hole traps present in these devices have been investigated using deep-level transient spectroscopy (DLTS). The DLTS results showed that the traps detected in the QWr-doped devices are directly or indirectly related to the insertion of the Si δ-layer used to dope the wires. In addition, in the QWr-doped devices, the decrease of the solar conversion efficiencies at low temperatures and the associated decrease of the integrated external quantum efficiency through InGaAs could be attributed to detected traps E1QWR_D, E2QWR_D, and E3QWR_D with activation energies of 0.0037, 0.0053, and 0.041 eV, respectively.

Adhesive force between graphene nanoscale flakes and living biological cells.

We report on a measurement technique that quantifies the adhesive force between multi-layers of graphene flakes and the cell wall of live Escherichia coli cells using atomic force microscopy (AFM) in-fluid Peak Force- Quantitative Nanomechanical Mapping mode. To measure the adhesive force, we made use of the negative charge of E. coli cells to allow them to stick to positively charged surfaces, such as glass or silicon, that were covered by poly-L-Lysine. With this approach, cells were held in place for AFM characterization. Both pristine graphene (PG) flakes and functionalized graphene (FG) flakes were put on the E. coli cells and measurements of lateral size, flake thickness, and adhesion were made. Using this approach, the measured values of the adhesive force between multi-layers of graphene flakes (total thickness of 50 nm) and E. coli was determined to be equal or greater than 431 ± 65pN for (PG) and 694 ± 98pN for the (FG). More interestingly, the adhesive force of a graphene flake (thickness 1.3 nm) with the cell is determined to be equal or greater than 38.2 ± 16.4pN for the (PG) and 34.8 ± 15.3pN for the (FG). These interaction values can play an important role in determining and understanding the possible toxicity of graphene flakes. Copyright © 2017 John Wiley & Sons, Ltd.

Physicochemical characteristics of pristine and functionalized graphene.

Graphene-based nanomaterials have received significant attention in the last decade due to their interesting properties. Its electrical and thermal conductivity and strength make graphene well suited for a variety of applications, particularly for use as a composite material in plastics. Furthermore, much work is taking place to utilize graphene as a biomaterial for uses such as drug delivery and tissue regeneration scaffolds. Owing to the rapid progress of graphene and its potential in many marketplaces, the potential toxicity of these materials has garnered attention. Graphene, while simple in its purest form, can have many different chemical and physical properties. In this paper, we describe our toxicity evaluation of pristine graphene and a functionalized graphene sample that has been oxidized for enhanced hydrophilicity, which was synthesized from the pristine sample. The samples were characterized by X-ray photoelectron spectroscopy, Raman spectroscopy, infrared spectroscopy, thermogravimetric analysis, zeta-potential, atomic force microscopy and electron microscopy. We discuss the disagreement between the size of imaged samples analyzed by atomic force microscopy and by transmission electron microscopy. Furthermore, the samples each exhibit quite different surface chemistry and structure, which directly affects their interaction with aqueous environments and is important to consider when evaluating the toxicity of materials both in vitro and in vivo. Copyright © 2017 John Wiley & Sons, Ltd.

Defect-Free Self-Catalyzed GaAs/GaAsP Nanowire Quantum Dots Grown on Silicon Substrate.

The III-V nanowire quantum dots (NWQDs) monolithically grown on silicon substrates, combining the advantages of both one- and zero-dimensional materials, represent one of the most promising technologies for integrating advanced III-V photonic technologies on a silicon microelectronics platform. However, there are great challenges in the fabrication of high-quality III-V NWQDs by a bottom-up approach, that is, growth by the vapor-liquid-solid method, because of the potential contamination caused by external metal catalysts and the various types of interfacial defects introduced by self-catalyzed growth. Here, we report the defect-free self-catalyzed III-V NWQDs, GaAs quantum dots in GaAsP nanowires, on a silicon substrate with pure zinc blende structure for the first time. Well-resolved excitonic emission is observed with a narrow line width. These results pave the way toward on-chip III-V quantum information and photonic devices on silicon platform.

Comparative study of photoluminescence from In0.3Ga0.7As/GaAs surface and buried quantum dots.

The optical properties of In0.3Ga0.7As/GaAs surface quantum dots (SQDs) and buried QDs (BQDs) are investigated by photoluminescence (PL) measurements. The integrated PL intensity, linewidth, and lifetime of SQDs are significantly different from the BQDs both at room temperature and at low temperature. The differences in PL response, measured at both steady state and in transient, are attributed to carrier transfer between the surface states and the SQDs.

Two-photon, three-photon, and four-photon near-infrared quantum cutting luminescence of an Er3+ activator in tellurium glass phosphor.

Multiphoton near-IR downconversion quantum cutting luminescence of Er3+-ion-doped tellurium glass is studied. We find that the excitation spectra of 1532.0 nm IR light and 550.0 nm visible light are very similar in wave shape and peak wavelength. When the concentration of Er3+ ions is increased from 0.5% to 3.2%, we observe that both the IR luminescence and excitation intensity of the samples are increased by a factor of 1.80-5.49, with a concomitant decrease in both visible luminescence and excitation intensity by a factor of 0.87-1.91. Therefore, we conclude that the present phenomenon is a multiphoton near-IR quantum cutting luminescence phenomenon. We also find that the near-IR quantum cutting efficiency up-limits of the I9/24, F9/24, S3/24, and H11/22 states are respectively 157%, 138%, 193%, and 192% for Er3+(3.2%):tellurium glass and 175%, 154%, 233%, and 233% for Er3+(5.0%):tellurium glass.

Sensitized intense near-infrared downconversion quantum cutting three-photon luminescence phenomena of the Tm(3+) ion activator in Tm(3+)Bi(3+):YNbO(4) powder phosphor.

In present study, the intense sensitized three photon near-infrared quantum cutting luminescence of Tm(3+) ion activator in Tm(3+)Bi(3+):YNbO(4) powder phosphor is reported. It is induced both by [{(1)G(4)→(3)H(4), (3)H(6)→(3)H(5)} or {(1)G(4)→(3)H(5), (3)H(6)→(3)H(4)}] and {(3)H(4)→(3)F(4), (3)H(6)→(3)F(4)} cross-energy transfer. We found that the 1820.0 nm (3)F(4)→(3)H(6) luminescence intensity of Tm(0.08)Bi(0.01)Y(0.91)NbO(4) powder phosphor excited by 302.0 nm is 151 and 8.38 times larger, compared to Tm(0.005)Y(0.995)NbO(4) excited by 302.0 and 468.0 nm, in which the quantum cutting takes place between Tm(3+) ions and Bi(3+) ion only acts as sensitizer. To the knowledge of the authors, it is the first time that the effective Bi(3+) sensitized near-infrared quantum cutting of Tm(3+) ion activator has been reported. It can facilitate the probing of the next-generation environmentally friendly germanium solar cell.

1.3-µm InAs/GaAs quantum-dot lasers monolithically grown on Si substrates using InAlAs/GaAs dislocation filter layers.

We compare InAlAs/GaAs and InGaAs/GaAs strained-layer superlattices (SLSs) as dislocation filter layers for 1.3-µm InAs/GaAs quantum-dot laser structures directly grown on Si substrates. InAlAs/GaAs SLSs are found to be more effective than InGaAs/GaAs SLSs in blocking the propagation of threading dislocations generated at the interface between the GaAs buffer layer and the Si substrate. Room-temperature lasing at ~1.27 µm with a threshold current density of 194 A/cm(2) and output power of ~77 mW has been demonstrated for broad-area lasers grown on Si substrates using InAlAs/GaAs dislocation filter layers.

The growth of Ge and direct bandgap Ge1-xSnx on GaAs (001) by molecular beam epitaxy.

Germanium tin (GeSn) is a tuneable narrow bandgap material, which has shown remarkable promise for the industry of near- and mid-infrared technologies for high efficiency photodetectors and laser devices. Its synthesis is challenged by the lattice mismatch between the GeSn alloy and the substrate on which it is grown, sensitively affecting its crystalline and optical qualities. In this article, we investigate the growth of Ge and GeSn on GaAs (001) substrates using two different buffer layers consisting of Ge/GaAs and Ge/AlAs via molecular beam epitaxy. The quality of the Ge layers was compared using X-ray diffraction, atomic force microscopy, reflection high-energy electron diffraction, and photoluminescence. The characterization techniques demonstrate high-quality Ge layers, including atomic steps, when grown on either GaAs or AlAs at a growth temperature between 500-600 °C. The photoluminescence from the Ge layers was similar in relative intensity and linewidth to that of bulk Ge. The Ge growth was followed by the growth of GeSn using a Sn composition gradient and substrate gradient approach to achieve GeSn films with 9 to 10% Sn composition. Characterization of the GeSn films also indicates high-quality gradients based on X-ray diffraction, photoluminescence, and energy-dispersive X-ray spectroscopy measurements. Finally, we were able to demonstrate temperature-dependent PL results showing that for the growth on Ge/GaAs buffer, the direct transition has shifted past the indirect transition to a longer wavelength/lower energy suggesting a direct bandgap GeSn material.

Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy.

The growth of high-composition GeSn films in the future will likely be guided by algorithms. In this study, we show how a logarithmic-based algorithm can be used to obtain high-quality GeSn compositions up to 16% on GaAs (001) substrates via molecular beam epitaxy. Herein, we use composition targeting and logarithmic Sn cell temperature control to achieve linearly graded pseudomorph Ge1-xSnx compositions up to 10% before partial relaxation of the structure and a continued gradient up to 16% GeSn. In this report, we use X-ray diffraction, simulation, secondary ion mass spectrometry, and atomic force microscopy to analyze and demonstrate some of the possible growths that can be produced with the enclosed algorithm. This methodology of growth is a major step forward in the field of GeSn development and the first ever demonstration of algorithmically driven, linearly graded GeSn films.

Multiphoton near-infrared quantum cutting luminescence phenomena of Tm3+ ion in (Y1-xTm(x))3Al5O12 powder phosphor.

In the present study, the multiphoton near-infrared downconversion quantum cutting luminescence phenomena of Tm3+ ion in (Y(1-x)Tm(x))(3)Al(5)O(12) powder phosphor, which is currently a hot research topic throughout the world, is reported. The x-ray diffraction spectra, the visible to near-infrared excitation and emission spectra, and fluorescence lifetimes are measured. It is found that Tm:YAG powder phosphor has intense two-photon quantum cutting luminescence, and, for the first time, it is found that Tm:YAG powder phosphor has strong four-photon near-infrared quantum cutting luminescence of 1788 nm (3)F4 → (3)H6 fluorescence of Tm(3+) ion. It is also found that the theoretical up-limit of four-photon near-infrared quantum cutting efficiency is about 282.12%, which results from both the {(1)D2 → (3)F2, (3)H6 → (3)H4} and {(3)H4 → (3)F4, (3)H6 → (3)F4} cross-energy transfers.

Multiphoton near-infrared quantum cutting luminescence of Yb3+ ion cooperative energy transferred from the oxyfluoride vitroceramics phosphor matrix.

In this Letter, we reported on an interesting multiphoton infrared quantum cutting phenomenon in Yb(3+)Tb3(+)-doped oxyfluoride vitroceramics phosphors. From the study results it is found that the absorption of one 288.0 nm photon of the matrix results in the emission of two 975.5 nm photons of the Yb3+ ion. In addition, it is found also that one 255.0 nm photon of the matrix may result in the emission of three 975.5 nm photons of the Yb3+ ion, due to the fact that their cooperative energy transfer rate is larger than multiphonon nonradiative relaxation rate.

Self-assembled InGaAs quantum dot clusters with controlled spatial and spectral properties.

Planar quantum dot clusters (QDCs) consisting of six InGaAs quantum dots (QDs) formed around a GaAs nanomound are the most sophisticated self-assembled QDCs grown by molecular beam epitaxy thus far. We present the first photoluminescence measurements on individual hexa-QDCs with high spatial, spectral, and temporal resolution. In the best QDCs, the excitons confined in individual QDs are remarkably close in energy, exhibiting only a 10 meV spread. In addition, a biexponential decay profile and small variation in decay rates for different QDs was observed. The homogeneous energetics and dynamics suggest that the sizes, shapes, and composition of the QDs within these clusters are highly uniform.

The Growth of Polarization Domains in Ultrathin Ferroelectric Films Seeded by the Tip of an Atomic Force Microscope.

Piezoresponse force microscopy is used to study the velocity of the polarization domain wall in ultrathin ferroelectric barium titanate (BTO) films grown on strontium titanate (STO) substrates by molecular beam epitaxy. The electric field due to the cone of the atomic force microscope tip is demonstrated as the dominant electric field for domain expansion in thin films at lateral distances greater than about one tip diameter away from the tip. The velocity of the domain wall under the applied electric field by the tip in BTO for thin films (less than 40 nm) followed an expanding process given by Merz's law. The material constants in a fit of the data to Merz's law for very thin films are reported as about 4.2 KV/cm for the activation field, [Formula: see text], and 0.05 nm/s for the limiting velocity, [Formula: see text]. These material constants showed a dependence on the level of strain in the films, but no fundamental dependence on thickness.

Band Offsets of the MOCVD-Grown ß-(Al0.21Ga0.79)2O3/ß-Ga2O3 (010) Heterojunction.

The band offsets for the ß-(Al0.21Ga0.79)2O3/ß-Ga2O3 (010) heterojunction have been experimentally measured by X-ray photoelectron spectroscopy. High-quality ß-(Al0.21Ga0.79)2O3 films were grown by metal-organic chemical vapor deposition for characterization. The indirect band gap of ß-(Al0.21Ga0.79)2O3 was determined by optical transmission to be 4.69 ± 0.03 eV with a direct transition of 5.37 ± 0.03 eV, while ß-Ga2O3 was confirmed to have an indirect band gap of 4.52 ± 0.03 eV with a direct transition of 4.94 ± 0.03 eV. The resulting band alignment at the heterojunction was determined to be of type II with the valence and conduction band edges of ß-(Al0.21Ga0.79)2O3 being -0.26 ± 0.08 and 0.43 ± 0.08 eV, respectively, above those of ß-Ga2O3 (010). These values can now be used to help better design and predict the performance of ß-(AlxGa1-x)2O3 heterojunction-based devices.

Coherent-interface-induced strain in large lattice-mismatched materials: A new approach for modeling Raman shift.

Strain engineering as one of the most powerful techniques for tuning optical and electronic properties of Ill-nitrides requires reliable methods for strain investigation. In this work, we reveal, that the linear model based on the experimental data limited to within a small range of biaxial strains (< 0.2%), which is widely used for the non-destructive Raman study of strain with nanometer-scale spatial resolution is not valid for the binary wurtzite-structure group-III nitrides GaN and AlN. Importantly, we found that the discrepancy between the experimental values of strain and those calculated via Raman spectroscopy increases as the strain in both GaN and AlN increases. Herein, a new model has been developed to describe the strain-induced Raman frequency shift in GaN and AlN for a wide range of biaxial strains (up to 2.5%). Finally, we proposed a new approach to correlate the Raman frequency shift and strain, which is based on the lattice coherency in the epitaxial layers of superlattice structures and can be used for a wide range of materials. Electronic Supplementary Material: Supplementary material (Table S1: Values of bulk phonon deformation potentials and elastic constants for GaN and AlN from each reference used in Table 1, Fig. S1: Lattice parameters of SL layers using Eq. (8), and Fig. S2: Raman mapping using Eq. (7)) is available in the online version of this article at 10.1007/s12274-021-3855-4.