Mn-inlaid antiphase boundaries in perovskite structure.

Improvements in the polarization of environmentally-friendly perovskite ferroelectrics have proved to be a challenging task in order to replace the toxic Pb-based counterparts. In contrast to common methods by complex chemical composition designs, we have formed Mn-inlaid antiphase boundaries in Mn-doped (K,Na)NbO3 thin films using pulsed laser deposition method. Here, we observed that mono- or bi-atomic layer of Mn has been identified to inlay along the antiphase boundaries to balance the charges originated from the deficiency of alkali ions and to induce the strain in the KNN films. Thus, rectangular saturated polarization-electric field hysteresis loops have been achieved, with a significantly improved twice remanent polarization of 114 µC/cm2 with an applied electric field of 606 kV/cm, which can be comparable to that of the typical Pb-based thin films. Moreover, we directly see the Mn occupation at the A-site of KNN perovskite structure using atomic-scale microstructure and composition analysis. The Mn-inlaid antiphase boundary can further enrich the understanding of perovskite crystal structure and give more possibilities for the design and optimization of perovskite materials.

The role of local non-tetragonal polar displacements in the temperature- and pressure-induced phase transitions in PbTiO3-BiMeO3 ferroelectrics.

In situ high-pressure/high-temperature Raman-scattering analyses on PbTiO 3 , 0.92PbTiO 3 - 0.08Bi(Zn 0.5 Ti 0.5 )O 3 and 0.83PbTiO 3 - 0.17Bi(Mg 0.5 Ti 0.5 )O 3 single crystals reveal an intensity transfer between the fine-structure components of the A 1 (TO) soft mode. The enhancement of the lowest-energy subpeak, which stems from intrinsic local non-tetragonal polar distortions, along with the suppression of the tetragonal A 1 (1TO) fundamental mode with increasing pressure and temperature indicates the key role of the local polarization fluctuations in transformation processes and emphasizes the significance of the order-disorder phenomena in both the pressure- and temperature-induced phase transitions of pure PbTiO 3 and its solid solutions with complex perovskites. Moreover, the temperature and pressure evolution of the fraction of the local non-tetragonal polar distortions is highly sensitive to the type of B-site substituent.

X-ray-induced piezoresponse during X-ray photon correlation spectroscopy of PbMg1/3Nb2/3O3.

X-ray photon correlation spectroscopy (XPCS) holds strong promise for observing atomic-scale dynamics in materials, both at equilibrium and during non-equilibrium transitions. Here an in situ XPCS study of the relaxor ferroelectric PbMg1/3Nb2/3O3 (PMN) is reported. A weak applied AC electric field generates strong response in the speckle of the diffuse scattering from the polar nanodomains, which is captured using the two-time correlation function. Correlated motions of the Bragg peak are also observed, which indicate dynamic tilting of the illuminated volume. This tilting quantitatively accounts for the observed two-time speckle correlations. The magnitude of the tilting would not be expected solely from the modest applied field, since PMN is an electrostrictive material with no linear strain response to the field. A model is developed based on non-uniform static charging of the illuminated surface spot by the incident micrometre-scale X-ray beam and the electrostrictive material response to the combination of static and dynamic fields. The model qualitatively explains the direction and magnitude of the observed tilting, and predicts that X-ray-induced piezoresponse could be an important factor in correctly interpreting results from XPCS and nanodiffraction studies of other insulating materials under applied AC field or varying X-ray illumination.

Structure, Antiferroelectricity and Energy-Storage Performance of Lead Hafnate in a Wide Temperature Range.

Lead hafnate (PbHfO3) has attracted a lot of renewed interest due to its potential as antiferroelectric (AFE) material for energy storage. However, its room temperature (RT) energy-storage performance has not been well established and no reports on the energy-storage feature of its high-temperature intermediate phase (IM) are available. In this work, high-quality PbHfO3 ceramics were prepared via the solid-state synthesis route. Based on high-temperature X-ray diffraction data, the IM of PbHfO3 was found to be orthorhombic, Imma space group, with antiparallel alignment of Pb2+ ions along the [001]cubic directions. The polarization-electric field (P-E) relation of PbHfO3 is displayed at RT as well as in the temperature range of the IM. A typical AFE loop revealed an optimal recoverable energy-storage density (Wrec) of 2.7 J/cm3, which is 286% higher than the reported data with an efficiency (η) of 65% at 235 kV/cm at RT. A relatively high Wrec value of 0.7 J/cm3 was found at 190 °C with an η of 89% at 65 kV/cm. These results demonstrate that PbHfO3 is a prototypical AFE from RT up to 200 °C, making it a suitable material for energy-storage applications in a wide temperature range.

Tuning of Polar Domain Boundaries in Nonpolar Perovskite.

Domain boundaries in ferroic materials are found to have various physical properties not observed in the surrounding domains. Such differences can be enhanced and bring promising functionalities when centrosymmetric nonpolar materials encounter polar domain boundaries. In this work, a tunable polar domain boundary is discovered in an antiferroelectric single crystal. Under a small stress or electric field, the density, volume, and polarity of the boundaries are successfully controlled.

Highly heterogeneous epitaxy of flexoelectric BaTiO3-δ membrane on Ge.

The integration of complex oxides with a wide spectrum of functionalities on Si, Ge and flexible substrates is highly demanded for functional devices in information technology. We demonstrate the remote epitaxy of BaTiO3 (BTO) on Ge using a graphene intermediate layer, which forms a prototype of highly heterogeneous epitaxial systems. The Ge surface orientation dictates the outcome of remote epitaxy. Single crystalline epitaxial BTO3-δ films were grown on graphene/Ge (011), whereas graphene/Ge (001) led to textured films. The graphene plays an important role in surface passivation. The remote epitaxial deposition of BTO3-δ follows the Volmer-Weber growth mode, with the strain being partially relaxed at the very beginning of the growth. Such BTO3-δ films can be easily exfoliated and transferred to arbitrary substrates like Si and flexible polyimide. The transferred BTO3-δ films possess enhanced flexoelectric properties with a gauge factor of as high as 1127. These results not only expand the understanding of heteroepitaxy, but also open a pathway for the applications of devices based on complex oxides.

Strain-Induced Magnetoelectric Coupling in Fe3O4/BaTiO3 Nanopillar Composites.

Magnetoelectric coupling properties are limited to the substrate clamping effect in traditional ferroelectric/ferromagnetic heterostructures. Here, Fe3O4/BaTiO3 nanopillar composites are successfully constructed. The well-ordered BaTiO3 nanopillar arrays are prepared through template-assisted pulsed laser deposition. The Fe3O4 layer is coated on BaTiO3 nanopillar arrays by atomic layer deposition. The nanopillar arrays and heterostructure are confirmed by scanning electron microscopy and transmission electron microscopy. A large thermally driven magnetoelectric coupling coefficient of 395 Oe °C-1 near the phase transition of BaTiO3 (orthorhombic to rhombohedral) is obtained, indicating a strong strain-induced magnetoelectric coupling effect. The enhanced magnetoelectric coupling effect originated from the reduced substrate clamping effect and increased the interface area in nanopillar structures. This work opens a door toward cutting-edge potential applications in spintronic devices.

Self-Assembled Epitaxial Ferroelectric Oxide Nanospring with Super-Scalability.

Oxide nanosprings have attracted many research interests because of their anticorrosion, high-temperature tolerance, oxidation resistance, and enhanced-mechanic-response from unique helix structures, enabling various applications like nanomanipulators, nanomotors, nanoswitches, sensors, and energy harvesters. However, preparing oxide nanosprings is a challenge for their intrinsic lack of elasticity. Here, an approach for preparing self-assembled, epitaxial, ferroelectric nanosprings with built-in strain due to the lattice mismatch in freestanding La0.7 Sr0.3 MnO3 /BaTiO3 (LSMO/BTO) bilayer heterostructures is developed. It is found that these LSMO/BTO nanosprings can be extensively pulled or pushed up to their geometrical limits back and forth without breaking, exhibiting super-scalability with full recovery capability. The phase-field simulations reveal that the excellent scalability originates from the continuous ferroelastic domain structures, resulting from twisting under co-existing axial and shear strains. In addition, the oxide heterostructural springs exhibit strong resilience due to the limited plastic deformation nature and the built-in strain between the bilayers. This discovery provides an alternative way for preparing and operating functional oxide nanosprings that can be applied to various technologies.

Effects of Composition Segregation in PMN-PT Crystals on Ultrasound Transducer Performance.

This study investigates the relationship between the composition segregation in lead magnesium niobate-lead titanate (PMN-PT; PMN-29%PT, PMN-29.5%PT, PMN-30%PT, PMN-30.5%PT, and PMN-31%PT) single crystals within morphotropic phase boundary (MPB) and the corresponding ultrasonic transducer performance through PiezoCAD modeling and real transducer testing. For five crystals with compositions distributed across the main body of a crystal ingot, the piezoelectric coefficient and free relative permittivity values were measured to vary by over 30%, whereas the transducer bandwidth and center frequency values were modeled to change by less than 10%. For the single-element ultrasonic transducers fabricated using those crystals without matching layers, the variations of -6-dB bandwidth, insertion loss, receiver-free field voltage response, and center frequency were measured to be 9.61%, -15.23%, 9.76%, and 1.41%, respectively, confirming the modeling results. Using the Mason and Krimholtz, Leedom, and Matthaei (KLM) models, it is found that the relatively stable transducer performance can be attributed to the relatively consistent electromechanical coupling coefficient, acoustic impedance, and clamped relative permittivity originated from the stable elastic compliance properties among the crystals of various compositions. It is expected that the relatively stable performance could be extended to multielement transducers with matching layers for the same contributing mechanisms. Our results suggest that it is possible to use crystal plates of different compositions within the MPB region, obtained from one and the same ingot, to fabricate a batch of ultrasonic transducers that will exhibit a similar performance, significantly reducing the cost of materials.

Ferroelectric phase-transition frustration near a tricritical composition point.

Phase transition describes a mutational behavior of matter states at a critical transition temperature or external field. Despite the phase-transition orders are well sorted by classic thermodynamic theory, ambiguous situations interposed between the first- and second-order transitions were exposed one after another. Here, we report discovery of phase-transition frustration near a tricritical composition point in ferroelectric Pb(Zr1-xTix)O3. Our multi-scale transmission electron microscopy characterization reveals a number of geometrically frustrated microstructure features such as self-assembled hierarchical domain structure, degeneracy of mesoscale domain tetragonality and decoupled polarization-strain relationship. Associated with deviation from the classic mean-field theory, dielectric critical exponent anomalies and temperature dependent birefringence data unveil that the frustrated transition order stems from intricate competition of short-range polar orders and their decoupling to long-range lattice deformation. With supports from effective Hamiltonian Monte Carlo simulations, our findings point out a potentially universal mechanism to comprehend the abnormal critical phenomena occurring in phase-transition materials.

Hybrid System Combining Two-Dimensional Materials and Ferroelectrics and Its Application in Photodetection.

Photodetectors are one of the most important components for a future "Internet-of-Things" information society. Compared to the mainstream semiconductor-based photodetectors, emerging devices based on two-dimensional (2D) materials and ferroelectrics as well as their hybrid systems have been extensively studied in recent decades due to their outstanding performances and related interesting physical, electrical, and optoelectronic phenomena. In this paper, we review the photodetection based on 2D materials and ferroelectric hybrid systems. The fundamentals of 2D and ferroelectric materials as well as the interaction in the hybrid system will be introduced. Ferroelectricity modulated optoelectronic properties in the hybrid system will be discussed in detail. After the basics and figures of merit of photodetectors are summarized, the 2D-ferroelectrics devices with different structures including p-n diodes, Schottky diodes, and field-effect transistors will be reviewed and compared. The polarization of ferroelectrics offers the possibility of the modulation and enhancement of the photodetection in the hybrid detectors, which will be discussed in depth. Finally, the challenges and perspectives of the photodetectors based on 2D ferroelectrics will be proposed. This Review outlines the important aspects of the recent development of the hybrid system of 2D and ferroelectric materials, which could interact with each other and thus lead to photodetectors with higher performances. Such a Review will be helpful for the research of emerging physical phenomena and for the design of multifunctional nanoscale electronic and optoelectronic devices.

Lead-Free KNN-Based Textured Ceramics for High-Frequency Ultrasonic Transducer Application.

Environment-friendly lead-free piezoelectric materials with excellent piezoelectric properties are needed for high-frequency ultrasonic transducer applications. Recently, lead-free 0.915(K0.45Na0.5Li0.05)NbO3-0.075BaZrO 3-0.01(Bi0.5Na0.5)TiO3 (KNLN-BZ-BNT) textured piezo- electric ceramics have high piezoelectric response, superior thermal stability, and excellent fatigue resistance, which are promising for devices applications. In this work, the KNLN-BZ-BNT textured ceramics were prepared by the tape-casting method. Microstructural morphology, phase transition, and electrical properties of KNLN-BZ-BNT textured ceramics were investigated. High-frequency needle-type ultrasonic transducers were designed and fabricated with these textured ceramics. The tightly focused transducers have a center frequency higher than 80 MHz and a -6-dB fractional bandwidth of 52%. Such transducers were built for an f -number close to 1, and the desired focal depth was achieved by press-focusing technology associated with a set of customer design fixture. Its lateral resolution was better than [Formula: see text] by scanning a 15- [Formula: see text] tungsten wire target. These promising results demonstrate that the lead-free KNLN-BZ-BNT textured ceramic is a good candidate for high-frequency ultrasonic transducer applications.

Periodic Wrinkle-Patterned Single-Crystalline Ferroelectric Oxide Membranes with Enhanced Piezoelectricity.

Self-assembled membranes with periodic wrinkled patterns are the critical building blocks of various flexible electronics, where the wrinkles are usually designed and fabricated to provide distinct functionalities. These membranes are typically metallic and organic materials with good ductility that are tolerant of complex deformation. However, the preparation of oxide membranes, especially those with intricate wrinkle patterns, is challenging due to their inherently strong covalent or ionic bonding, which usually leads to material crazing and brittle fracture. Here, wrinkle-patterned BaTiO3 (BTO)/poly(dimethylsiloxane) membranes with finely controlled parallel, zigzag, and mosaic patterns are prepared. The BTO layers show excellent flexibility and can form well-ordered and periodic wrinkles under compressive in-plane stress. Enhanced piezoelectricity is observed at the sites of peaks and valleys of the wrinkles where the largest strain gradient is generated. Atomistic simulations further reveal that the excellent elasticity and the correlated coupling between polarization and strain/strain gradient are strongly associated with ferroelectric domain switching and continuous dipole rotation. The out-of-plane polarization is primarily generated at compressive regions, while the in-plane polarization dominates at the tensile regions. The wrinkled ferroelectric oxides with differently strained regions and correlated polarization distributions would pave a way toward novel flexible electronics.

Phase transition enhanced superior elasticity in freestanding single-crystalline multiferroic BiFeO3 membranes.

The integration of ferroic oxide thin films into advanced flexible electronics will bring multifunctionality beyond organic and metallic materials. However, it is challenging to achieve high flexibility in single-crystalline ferroic oxides that is considerable to organic or metallic materials. Here, we demonstrate the superior flexibility of freestanding single-crystalline BiFeO3 membranes, which are typical multiferroic materials with multifunctionality. They can endure cyclic 180° folding and have good recoverability, with the maximum bending strain up to 5.42% during in situ bending under scanning electron microscopy, far beyond their bulk counterparts. Such superior elasticity mainly originates from reversible rhombohedral-tetragonal phase transition, as revealed by phase-field simulations. This study suggests a general fundamental mechanism for a variety of ferroic oxides to achieve high flexibility and to work as smart materials in flexible electronics.

Raman Scattering Studies of the Structural Phase Transitions in Single-Crystalline CH3NH3PbCl3.

Methylammonium lead trihalide perovskites CH3NH3PbX3 (X = Cl, Br, and I) have recently attracted huge attention as a promising candidate for highly efficient solar cell absorber materials. To understand the physical properties of halide perovskites, we investigated the CH3NH3PbCl3 single crystal by Raman scattering spectroscopy from 80 K to room temperature. Benchmarking the phonon modes and their Raman activities obtained by density functional calculations, we successfully assign the molecular vibrations of methylammonium in the frequency range from 400 to 3300 cm-1. In the temperature-dependent Raman scattering spectra, the internal vibrational modes of the CH3NH3+ cation are observed in the frequency range above 400 cm-1 and a number of peaks among them show characteristic changes that reflect the phase transition occurring at about 160 K in CH3NH3PbCl3. A noticeable Raman peak at 2900 cm-1 persists in a wide range of temperature, suggesting the existence of microcrystalline methylammonium chloride possibly left on the crystal surface from the growth process or spontaneously formed after synthesis.

Toward a Reliable Synaptic Simulation Using Al-Doped HfO2 RRAM.

The potential in a synaptic simulation for neuromorphic computation has revived the research interest of resistive random access memory (RRAM). However, novel applications require reliable multilevel resistive switching (RS), which still represents a challenge. We demonstrate in this work the achievement of reliable HfO2-based RRAM devices for synaptic simulation by performing the Al doping and the postdeposition annealing (PDA). Transmission electron microscopy and operando hard X-ray photoelectron spectroscopy results reveal the positive impact of Al doping on the formation of oxygen vacancies. Detailed I-V characterizations demonstrate that the 16.5% Al doping concentration leads to better RS properties of the device. In comparison with the other reported results based on HfO2 RRAM, our devices with 16.5% Al-doping and PDA at 450 °C show better reliable multilevel RS (∼20 levels) performance and an increased on/off ratio. The 16.5% Al:HfO2 sample with PDA at 450 °C shows good potentiation/depression characteristics with low pulse width (10 µs) along with a good On/Off ratio (>1000), good data retention at room temperature, and high temperature and good program/erase endurance characteristics with a pulse width of 50 ns. The synapse features including potentiation, depression, and spike time-dependent plasticity were successfully achieved using optimized Al-HfO2 RRAM devices. Our results demonstrate the beneficial effects of Al doping and PDA on the enhancement of the performances of RRAM devices for the synaptic simulation in neuromorphic computing applications.

Reliable resistive switching of epitaxial single crystalline cubic Y-HfO2 RRAMs with Si as bottom electrodes.

Previous studies have mainly focused on the resistive switching (RS) of amorphous or polycrystalline HfO2-RRAM. The RS of single crystalline HfO2 films has been rarely reported. Yttrium doped HfO2 (YDH) thin films were fabricated and successful Y incorporation into HfO2 was confirmed by x-ray photoemission spectroscopy. A pure cubic phase of YDH and an abrupt YDH/Si interface were obtained and verified by x-ray diffraction, Raman spectroscopy and transmission electron microscopy. A Pt/YDH/n++-Si heterostructure using Si as the bottom electrode was fabricated, which shows stable RS with an ON/OFF ratio of 100 and a reliable data retention (104 s). The electron transport mechanism was investigated in detail. It indicates that hopping conduction is dominating when the device is at a high resistance state, while space charge limited conduction acts as the dominant factor at a low resistance state. Such behavior, which is different from devices using TiN or Ti as electrodes, was attributed to the Y doping and specific YDH/Si interface. Our results demonstrate a proof of concept study to use highly doped Si as bottom electrodes along with single crystalline YDH as insulator layer for such RRAM applications as wireless sensors and synaptic simulation.

Polymer Matrix Nanocomposites with 1D Ceramic Nanofillers for Energy Storage Capacitor Applications.

Recent developments in various technologies, such as hybrid electric vehicles and pulsed power systems, have challenged researchers to discover affordable, compact, and super-functioning electric energy storage devices. Among the existing energy storage devices, polymer nanocomposite film capacitors are a preferred choice due to their high power density, fast charge and discharge speed, high operation voltage, and long service lifetime. In the past several years, they have been extensively researched worldwide, with 0D, 1D, and 2D nanofillers being incorporated into various polymer matrixes. However, 1D nanofillers appeared to be the most effective in producing large dipole moments, which leads to a considerably enhanced dielectric permittivity and energy density of the nanocomposite. As such, this Review focuses on recent advances in polymer matrix nanocomposites using various types of 1D nanofillers, i.e., linear, ferroelectric, paraelectric, and relaxor-ferroelectric for energy storage applications. Correspondingly, the latest developments in the nanocomposite dielectrics with highly oriented, surface-coated, and surface-decorated 1D nanofillers are presented. Special attention has been paid to identifying the underlying mechanisms of maximizing dielectric displacement, increasing dielectric breakdown strength, and enhancing the energy density. This Review also presents some suggestions for future research in low-loss, high energy storage devices.

Super-elastic ferroelectric single-crystal membrane with continuous electric dipole rotation.

Ferroelectrics are usually inflexible oxides that undergo brittle deformation. We synthesized freestanding single-crystalline ferroelectric barium titanate (BaTiO3) membranes with a damage-free lifting-off process. Our BaTiO3 membranes can undergo a ~180° folding during an in situ bending test, demonstrating a super-elasticity and ultraflexibility. We found that the origin of the super-elasticity was from the dynamic evolution of ferroelectric nanodomains. High stresses modulate the energy landscape markedly and allow the dipoles to rotate continuously between the a and c nanodomains. A continuous transition zone is formed to accommodate the variant strain and avoid high mismatch stress that usually causes fracture. The phenomenon should be possible in other ferroelectrics systems through domain engineering. The ultraflexible epitaxial ferroelectric membranes could enable many applications such as flexible sensors, memories, and electronic skins.

Low-Voltage-Manipulating Spin Dynamics of Flexible Fe3O4 Films through Ionic Gel Gating for Wearable Devices.

Mechanical flexible electronic/spintronic devices have shown enormous application potential to impact our daily life. Here, an in situ low-voltage-controlled flexible field-effect transistor structure was exploited, which consists of a support layer (mica), functional layer (Fe3O4), and control layer (ionic gel). By applying a low voltage (1.5 V) on the ionic gel, the spin-dynamic properties of the function layer were manipulated and a reversible, nonvolatile 345 Oe ferromagnetic resonance field ( Hr) shift was achieved, which corresponds to a large magnetoelectric (ME) coefficient of 230 Oe/V. In addition, a reversible 126 Oe Hr shift (84 Oe/V) was obtained when the layers were bent at curvature radius r = 15 mm. The ME tunability could be attributed to the E-field induced ionic transformation between Fe2+ and Fe3+ at the interface via electrostatic induction. This sandwich structure shows an excellent and effective ionic gel gating system and paves the way for low-voltage-tunable, nonvolatile, and flexible spintronic devices such as memory devices, sensors, and logical devices.