Biocompatible Material-Based Flexible Biosensors: From Materials Design to Wearable/Implantable Devices and Integrated Sensing Systems.

Human beings have a greater need to pursue life and manage personal or family health in the context of the rapid growth of artificial intelligence, big data, the Internet of Things, and 5G/6G technologies. The application of micro biosensing devices is crucial in connecting technology and personalized medicine. Here, the progress and current status from biocompatible inorganic materials to organic materials and composites are reviewed and the material-to-device processing is described. Next, the operating principles of pressure, chemical, optical, and temperature sensors are dissected and the application of these flexible biosensors in wearable/implantable devices is discussed. Different biosensing systems acting in vivo and in vitro, including signal communication and energy supply are then illustrated. The potential of in-sensor computing for applications in sensing systems is also discussed. Finally, some essential needs for commercial translation are highlighted and future opportunities for flexible biosensors are considered.

Near-Infrared Artificial Synapses for Artificial Sensory Neuron System.

The computing based on artificial neuron network is expected to break through the von Neumann bottleneck of traditional computer, and to greatly improve the computing efficiency, displaying a broad prospect in the application of artificial visual system. In the specific structural layout, it is a common method to connect the discrete photodetector with the artificial neuron in series, which enhances the complexity of signal recognition, conversion and storage. In this work, organic small molecule IR-780 iodide is inserted into the memory device as both the charge trapping layer and near-infrared (NIR) photoresponsive film. Through electrical and optical regulation, artificial synaptic functions including short-term plasticity, long-term plasticity, and spike rate dependence are realized. In the established artificial sensory neuron system, NIR optical pulses can significantly improve the spiking rate. Moreover, the spiking neural networks are further constructed by simulation for handwritten digit classification. This research may contribute to the development of light driven neural robots, optical signal encryption, and neural computing.

Inorganic Perovskite Quantum Dot-Based Strain Sensors for Data Storage and In-Sensor Computing.

Although remarkable improvement has been achieved in stretchable strain sensors, challenges still exist in aspects including intelligent sensing, simultaneous data processing, and scalable fabrication techniques. In this work, a strain-sensitive device is presented by fabricating a CsPbBr3 quantum dots (QDs) floating-gate field-effect transistor (FET) sensing array on thin polyimide (PI) films. The FET exhibits an excellent on/off ratio (>103) and a large memory window (>2 V). With the introduction of CsPbBr3 QDs as the trapping layer, an additional UV response is obtained because of the photogenerated charge carriers that significantly enhance the source-drain current (IDS) of the device. At each electrical state, the IDS varies with the strains and the sensing range is from compressive +12.5% to tensile -10.8%. Excellent data retainability and mechanical durability demonstrate the high quality and reliability of the fabricated sensors. Furthermore, synapse functions including long-term potentiation (LTP), long-term depression (LTD), etc., are emulated at the device level. Linearity factor changes of LTP/LTD in different sensing scenarios demonstrate the reliability of the device and further confirm the different sensing mechanisms with/without UV illumination. Our results exhibit the potential of transistor-based devices for multifunctional intelligent sensing.

Unprecedented enhancement of wear resistance for epoxy-resin graphene composites.

Epoxy resins (ERs) have extraordinary mechanical, electrical and chemical properties, and are widely used in the aerospace, electronics and marine industries. Nonetheless, solidified ERs have intrinsic brittleness and low wear resistance. Until now, the promotion of the wear resistance of ER is limited to 30 times, through blending from one to four reinforcing materials. Therefore, it has been a challenge to enhance the wear resistance of ER to over 30 times. Additionally, mechanisms to improve the tribological properties of polymer composites are elusive. In this study, novel ER/graphene composites (ECs) were developed, and the wear resistance of EC with 5 wt% graphene (EC5) was shown to be 628 times that of pure ER at 10 N. To the best of our knowledge, the unprecedented enhancement of wear resistance for ER is the highest reported. The enhancement mechanisms of graphene reinforcement to ER were determined by molecular dynamics simulations. When the content of graphene reaches 5 wt%, exfoliated graphene flakes adhere the most on the surface of a stainless-steel ball during sliding tests, reducing the wear most effectively. However, when the content of graphene is over 5 wt%, graphene flakes accumulate inside the composites, and less exfoliated graphene flakes adhere to the surface of the ball during sliding, increasing the wear. The developed binary ECs are light-weight and cost-effective and have minimal impact on the environment. This composite has many potential applications for high-performance components used in the aerospace, electronics and marine industries.

Stacked Two-Dimensional MXene Composites for an Energy-Efficient Memory and Digital Comparator.

Two-dimensional MXene has enormous potential for application in industry and academia owing to its surface hydrophilicity and excellent electrochemical properties. However, the application of MXene in optoelectronic memory and logical computing is still facing challenges. In this study, an optoelectronic resistive random access memory (RRAM) based on silver nanoparticles (Ag NPs)@MXene-TiO2 nanosheets (AMT) was prepared through a low-cost and facile hydrothermal oxidation process. The fabricated device exhibited a typical bipolar switching behavior and controllable SET voltage. Furthermore, we successfully demonstrated a 4-bit in-memory digital comparator with AMT RRAMs, which can replace five logic gates in a traditional approach. The AMT-based digital comparator may open the door for future integrated functions and applications in optoelectronic data storage and simplify the complex logic operations.

Enhanced Thermal Conductivity of Epoxy Composites Filled with 2D Transition Metal Carbides (MXenes) with Ultralow Loading.

With the development of electronic devices such as integrated circuits toward the continual increase in power density and consumption, the efficient heat dissipation and low thermal expansion of materials become one of the most important issue. However, conventional polymers have the problem of poor thermal dissipation performance, which hinder application for electronic devices. In this work, the two-dimensional material, MXene (Ti3C2), is used as the reinforcement additive to optimize the thermal properties of polymers. We reported the preparation of multilayer Ti3C2 MXene by HF etching method and obtained few-layer Ti3C2 MXene by simple ultrasonication. Meanwhile, Ti3C2/epoxy composites were prepared by a solution blending method. The results show that the thermal properties of the composites are improved in comparison with the neat epoxy. Thermal conductivity value (0.587 W/mK) of epoxy composite with only 1.0 wt% Ti3C2 MXene fillers, is increased by 141.3% compared with that of neat epoxy. In addition, the composite presents an increased glass transition temperature, high thermal stability and lower coefficient of thermal expansion. This work is of great significance for the research of high-performance composite materials.

Enhanced thermal conductivity of epoxy composites filled with tetrapod-shaped ZnO.

Epoxy composites with ZnO powders characterized by different structures as inclusion are prepared and their thermal properties are studied. The experimental results demonstrate that the epoxy resins filled by tetrapod-shaped ZnO (T-ZnO) whiskers have the superior thermal transport property in comparison to ZnO micron particles (ZnO MPs). The thermal conductivity of ZnO/epoxy and T-ZnO/epoxy composites in different mass fraction (10, 20, 30, 40, 50 wt%) are respectively investigated and the suitable models are compared to explain the enhancement effect of thermal conductivity. The thermal conductivity of T-ZnO/epoxy composites with 50 wt% filler reaches 4.38 W m-1 K-1, approximately 1816% enhancement as compared to neat epoxy. In contrast, the same mass fraction of ZnO MPs are incorporated into epoxy matrix showed less improvement on thermal conduction properties. This is because T-ZnO whiskers act as a thermal conductance bridge in the epoxy matrix. In addition, the other thermal properties of T-ZnO/epoxy composites are also improved. Furthermore, the T-ZnO/epoxy composite also presents a much reduced coefficient of thermal expansion (∼28.1 ppm K-1) and increased glass transition temperature (215.7 °C). This strategy meets the requirement for the rapid development of advanced electronic packaging.

Enhanced Thermal Conductivity of Polyimide Composites with Boron Nitride Nanosheets.

A strategy was reported to prepare boron nitride nanosheets (BNNSs) by a molten hydroxide assisted liquid exfoliation from hexagonal boron nitride (h-BN) powder. BNNSs with an average thickness of 3 nm were obtained by a facile, low-cost, and scalable exfoliation method. Highly thermally conductive polyimide (PI) composite films with BNNSs filler were prepared by solution-casting process. The in-plane thermal conductivity of PI composite films with 7 wt% BNNSs is up to 2.95 W/mK, which increased by 1,080% compared to the neat PI. In contrast, the out-of plane thermal conductivity of the composites is 0.44 W/mK, with an increase by only 76%. The high anisotropy of thermal conductivity was verified to be due to the high alignment of the BNNSs. The PI/BNNSs composite films are attractive for the thermal management applications in the field of next-generation electronic devices.

Nanoscale solely amorphous layer in silicon wafers induced by a newly developed diamond wheel.

Nanoscale solely amorphous layer is achieved in silicon (Si) wafers, using a developed diamond wheel with ceria, which is confirmed by high resolution transmission electron microscopy (HRTEM). This is different from previous reports of ultraprecision grinding, nanoindentation and nanoscratch, in which an amorphous layer at the top, followed by a crystalline damaged layer beneath. The thicknesses of amorphous layer are 43 and 48 nm at infeed rates of 8 and 15 µm/min, respectively, which is verified using HRTEM. Diamond-cubic Si-I phase is verified in Si wafers using selected area electron diffraction patterns, indicating the absence of high pressure phases. Ceria plays an important role in the diamond wheel for achieving ultrasmooth and bright surfaces using ultraprecision grinding.