Core/Shell-Like Localized Emission at Atomically Thin Semiconductor-Au Interface.

Localized emission in atomically thin semiconductors has sparked significant interest as single-photon sources. Despite comprehensive studies into the correlation between localized strain and exciton emission, the impacts of charge transfer on nanobubble emission remains elusive. Here, we report the observation of core/shell-like localized emission from monolayer WSe2 nanobubbles at room temperature through near-field studies. By altering the electronic junction between monolayer WSe2 and the Au substrate, one can effectively adjust the semiconductor to metal junction from a Schottky to an Ohmic junction. Through concurrent analysis of topography, potential, tip-enhanced photoluminescence, and a piezo response force microscope, we attribute the core/shell-like emissions to strong piezoelectric potential aided by induced polarity at the WSe2-Au Schottky interface which results in spatial confinement of the excitons. Our findings present a new approach for manipulating charge confinement and engineering localized emission within atomically thin semiconductor nanobubbles. These insights hold implications for advancing the nano and quantum photonics with low-dimensional semiconductors.

Interfacial Reaction and Diffusion at the One-Dimensional Interface of Two-Dimensional PtSe2.

Two-dimensional (2D) PtSe2 has potential applications in near-infrared optoelectronics because its band gap can be tuned by varying the layer thickness. There are several different platinum-selenide phases with different stoichiometries that result from high-temperature processing. In this report, we use in situ scanning/transmission electron microscopy (STEM) to investigate high-temperature phase transitions in 2D PtSe2 and observe interfacial reactions as well as the Kirkendall effect. The 2D nature of PtSe2 plays a key role in the unique one-dimensional interfaces that result during the formation of Se-poor phases (PtSe and PtSe1-x) at the edges of the PtSe2 crystals. The activation energy extracted for this formation suggests that the process is mediated by Se vacancies, as evidenced by the large strain variations in the material made via 4D STEM measurements. The observation of the Kirkendall effect in a 2D material suggests routes to engineer 1D edge chemistry for contact engineering in device applications.

Relativistic Light Sails Need to Billow.

We argue that light sails with nanometer-scale thicknesses that are rapidly accelerated to relativistic velocities by lasers must be significantly curved in order to reduce their intrafilm mechanical stresses and avoid tears. Using an integrated opto-thermo-mechanical model, we show that the diameter and radius of curvature of a circular light sail should be comparable in magnitude, both on the order of a few meters, in optimal designs for gram-scale payloads. Moreover, we demonstrate that, when sufficient laser power is available, a sail's acceleration length decreases as its curvature increases. Our findings provide critical guidance for emerging light sail design programs, which herald a new era of interstellar space exploration to destinations such as the Oort cloud, the Alpha Centauri system, and beyond.

Multiscale Photonic Emissivity Engineering for Relativistic Lightsail Thermal Regulation.

The Breakthrough Starshot Initiative aims to send a gram-scale probe to our nearest extrasolar neighbors using a laser-accelerated lightsail traveling at relativistic speeds. Thermal management is a key lightsail design objective because of the intense laser powers required but has generally been considered secondary to accelerative performance. Here, we demonstrate nanophotonic photonic crystal slab reflectors composed of 2H-phase molybdenum disulfide and crystalline silicon nitride, highlight the inverse relationship between the thermal band extinction coefficient and the lightsail's maximum temperature, and examine the trade-off between minimizing acceleration distance and setting realistic sail thermal limits, ultimately realizing a thermally endurable acceleration minimum distance of 23.3 Gm. We additionally demonstrate multiscale photonic structures featuring thermal-wavelength-scale Mie resonant geometries and characterize their broadband Mie resonance-driven emissivity enhancement and acceleration distance reduction. More broadly, our results highlight new possibilities for simultaneously controlling optical and thermal response over broad wavelength ranges in ultralight nanophotonic structures.

Reconfigurable Compute-In-Memory on Field-Programmable Ferroelectric Diodes.

The deluge of sensors and data generating devices has driven a paradigm shift in modern computing from arithmetic-logic centric to data-centric processing. Data-centric processing require innovations at the device level to enable novel compute-in-memory (CIM) operations. A key challenge in the construction of CIM architectures is the conflicting trade-off between the performance and their flexibility for various essential data operations. Here, we present a transistor-free CIM architecture that permits storage, search, and neural network operations on sub-50 nm thick Aluminum Scandium Nitride ferroelectric diodes (FeDs). Our circuit designs and devices can be directly integrated on top of Silicon microprocessors in a scalable process. By leveraging the field-programmability, nonvolatility, and nonlinearity of FeDs, search operations are demonstrated with a cell footprint <0.12 µm2 when projected onto 45 nm node technology. We further demonstrate neural network operations with 4-bit operation using FeDs. Our results highlight FeDs as candidates for efficient and multifunctional CIM platforms.

Post-CMOS Compatible Aluminum Scandium Nitride/2D Channel Ferroelectric Field-Effect-Transistor Memory.

Recent advances in oxide ferroelectric (FE) materials have rejuvenated the field of low-power, nonvolatile memories and made FE memories a commercial reality. Despite these advances, progress on commercial FE-RAM based on lead zirconium titanate has stalled due to process challenges. The recent discovery of ferroelectricity in scandium-doped aluminum nitride (AlScN) presents new opportunities for direct memory integration with logic transistors due to the low temperature of AlScN deposition (approximately 350 °C), making it compatible with back end of the line integration on silicon logic. Here, we present a FE-FET device composed of an FE-AlScN dielectric layer integrated with a two-dimensional MoS2 channel. Our devices show an ON/OFF ratio of ∼106, concurrent with a normalized memory window of 0.3 V/nm. The devices also demonstrate stable memory states up to 104 cycles and state retention up to 105 s. Our results suggest that the FE-AlScN/2D combination is ideal for embedded memory and memory-based computing architectures.

Gate-Tunable Plasmon-Enhanced Photodetection in a Monolayer MoS2 Phototransistor with Ultrahigh Photoresponsivity.

Monolayer transition metal dichalcogenides (TMDs), direct bandgap materials with an atomically thin nature, are promising materials for electronics and photonics, especially at highly scaled lateral dimensions. However, the characteristically low total absorption of photons in the monolayer TMD has become a challenge in the access to and realization of monolayer TMD-based high-performance optoelectronic functionalities and devices. Here, we demonstrate gate-tunable plasmonic phototransistors (photoFETs) that consist of monolayer molybdenum disulfide (MoS2) photoFETs integrated with the two-dimensional plasmonic crystals. The plasmonic photoFET has an ultrahigh photoresponsivity of 2.7 × 104 AW-1, achieving a 7.2-fold enhancement in the photocurrent compared to pristine photoFETs. This benefits predominately from the combination of the enhancement of the photon-absorption-rate via the strongly localized-electromagnetic-field and the gate-tunable plasmon-induced photocarrier-generation-rate in the monolayer MoS2. These results demonstrate a systematic methodology for designing ultrathin plasmon-enhanced photodetectors based on monolayer TMDs for next-generation ultracompact optoelectronic devices in the trans-Moore era.

Self-Hybridized Polaritonic Emission from Layered Perovskites.

Light-matter coupling in excitonic materials has been the subject of intense recent investigations due to emergence of new materials. Two-dimensional layered hybrid organic/inorganic perovskites (2D HOIPs) support strongly bound excitons at room temperature with some of the highest oscillator strengths and electric loss tangents among the known excitonic materials. Here, we report strong light-matter coupling in Ruddlesden-Popper phase 2D HOIP crystals without the necessity of an external cavity. We report the concurrent occurrence of multiple orders of hybrid light-matter states via both reflectance and luminescence spectroscopy in thick (>100 nm) crystals and near-unity absorption in thin (<20 nm) crystals. We observe resonances with quality factors of >250 in hybridized exciton-polaritons and identify a linear correlation between exciton-polariton mode splitting and extinction coefficient of the various 2D HOIPs. Our work opens the door to studying polariton dynamics in self-hybridized and open cavity systems with broad applications in optoelectronics and photochemistry.

Spatiotemporal Imaging of Thickness-Induced Band-Bending Junctions.

van der Waals materials exhibit naturally passivated surfaces and an ability to form versatile heterostructures to enable an examination of carrier transport mechanisms not seen in traditional materials. Here, we report a new type of homojunction termed a "band-bending junction" whose potential landscape depends solely on the difference in thickness between the two sides of the junction. Using MoS2 on Au as a prototypical example, we find that surface potential differences can arise from the degree of vertical band bending in thin and thick regions. Furthermore, by using scanning ultrafast electron microscopy, we examine the spatiotemporal dynamics of charge carriers generated at this junction and find that lateral carrier separation is enabled by differences in the band bending in the vertical direction, which we verify with simulations. Band-bending junctions may therefore enable new optoelectronic devices that rely solely on band bending arising from thickness variations to separate charge carriers.

Direct Imaging of Antiferromagnetic Domains and Anomalous Layer-Dependent Mirror Symmetry Breaking in Atomically Thin MnPS_{3}.

We have developed a sensitive cryogenic second-harmonic generation microscopy to study a van der Waals antiferromagnet MnPS_{3}. We find that long-range Néel antiferromagnetic order develops from the bulk crystal down to the bilayer, while it is absent in the monolayer. Before entering the long-range antiferromagnetic ordered phase in all samples, an upturn of the second harmonic generation below 200 K indicates the formation of the short-range order and magnetoelastic coupling. We also directly image the two antiphase (180°) antiferromagnetic domains and thermally induced domain switching down to bilayer. An anomalous mirror symmetry breaking shows up in samples thinner than ten layers for the temperature both above and below the Néel temperature, which indicates a structural change in few-layer samples. Minimal change of the second harmonic generation polar patterns in strain tuning experiments indicate that the symmetry crossover at ten layers is most likely an intrinsic property of MnPS_{3} instead of an extrinsic origin of substrate-induced strain. Our results show that second harmonic generation microscopy is a direct tool for studying antiferromagnetic domains in atomically thin materials, and opens a new way to study two-dimensional antiferromagnets.

Roadmap on emerging hardware and technology for machine learning.

Recent progress in artificial intelligence is largely attributed to the rapid development of machine learning, especially in the algorithm and neural network models. However, it is the performance of the hardware, in particular the energy efficiency of a computing system that sets the fundamental limit of the capability of machine learning. Data-centric computing requires a revolution in hardware systems, since traditional digital computers based on transistors and the von Neumann architecture were not purposely designed for neuromorphic computing. A hardware platform based on emerging devices and new architecture is the hope for future computing with dramatically improved throughput and energy efficiency. Building such a system, nevertheless, faces a number of challenges, ranging from materials selection, device optimization, circuit fabrication and system integration, to name a few. The aim of this Roadmap is to present a snapshot of emerging hardware technologies that are potentially beneficial for machine learning, providing the Nanotechnology readers with a perspective of challenges and opportunities in this burgeoning field.

Speeding up Nanoscience and Nanotechnology with Ultrafast Plasmonics.

Surface plasmons are collective oscillations of free electrons at the interface between a conducting material and the dielectric environment. These excitations support the formation of strongly enhanced and confined electromagnetic fields. As well, they display fast dynamics lasting tens of femtoseconds and can lead to a strong nonlinear optical response at the nanoscale. Thus, they represent the perfect tool to drive and control fast optical processes, such as ultrafast optical switching, single photon emission, as well as strong coupling interactions to explore and tailor photochemical reactions. In this Virtual Issue, we gather several important papers published in Nano Letters in the past decade reporting studies on the ultrafast dynamics of surface plasmons.

Machine Learning in Nanoscience: Big Data at Small Scales.

Recent advances in machine learning (ML) offer new tools to extract new insights from large data sets and to acquire small data sets more effectively. Researchers in nanoscience are experimenting with these tools to tackle challenges in many fields. In addition to ML's advancement of nanoscience, nanoscience provides the foundation for neuromorphic computing hardware to expand the implementation of ML algorithms. In this Mini Review, we highlight some recent efforts to connect the ML and nanoscience communities by focusing on three types of interaction: (1) using ML to analyze and extract new insights from large nanoscience data sets, (2) applying ML to accelerate material discovery, including the use of active learning to guide experimental design, and (3) the nanoscience of memristive devices to realize hardware tailored for ML. We conclude with a discussion of challenges and opportunities for future interactions between nanoscience and ML researchers.

Gate-Tunable Semiconductor Heterojunctions from 2D/3D van der Waals Interfaces.

van der Waals (vdW) semiconductors are attractive for highly scaled devices and heterogeneous integration as they can be isolated into self-passivated, two-dimensional (2D) layers that enable superior electrostatic control. These attributes have led to numerous demonstrations of field-effect devices ranging from transistors to triodes. By exploiting the controlled, substitutional doping schemes in covalently bonded, three-dimensional (3D) semiconductors and the passivated surfaces of 2D semiconductors, one can construct devices that can exceed performance metrics of "all-2D" vdW heterojunctions. Here, we demonstrate 2D/3D semiconductor heterojunctions using MoS2 as the prototypical 2D semiconductor laid upon Si and GaN as the 3D semiconductor layers. By tuning the Fermi levels in MoS2, we demonstrate devices that concurrently exhibit over 7 orders of magnitude modulation in rectification ratios and conductance. Our results further suggest that the interface quality does not necessarily affect Fermi level tuning at the junction, opening up possibilities for novel 2D/3D heterojunction device architectures.

Facile and quantitative estimation of strain in nanobubbles with arbitrary symmetry in 2D semiconductors verified using hyperspectral nano-optical imaging.

When layers of van der Waals materials are deposited via exfoliation or viscoelastic stamping, nanobubbles are sometimes created from aggregated trapped fluids. Though they can be considered a nuisance, nanobubbles have attracted scientific interest in their own right owing to their ability to generate large in-plane strain gradients that lead to rich optoelectronic phenomena, especially in the semiconducting transition metal dichalcogenides. Determination of the strain within the nanobubbles, which is crucial to understanding these effects, can be approximated using elasticity theory. However, the Föppl-von Kármán equations that describe strain in a distorted thin plate are highly nonlinear and often necessitate assuming circular symmetry to achieve an analytical solution. Here, we present an easily implemented numerical method to solve for strain tensors of nanobubbles with arbitrary symmetry in 2D crystals. The method only requires topographic information from atomic force microscopy and the Poisson ratio of the 2D material. We verify that this method reproduces the strain for circularly symmetric nanobubbles that have known analytical solutions. Finally, we use the method to reproduce the Grüneisen parameter of the E' mode for 1L-WS2 nanobubbles on template-stripped Au by comparing the derived strain with measured Raman shifts from tip-enhanced Raman spectroscopy, demonstrating the utility of our method for estimating localized strain in 2D crystals.

Engineering Magnetic Phases in Two-Dimensional Non-van der Waals Transition-Metal Oxides.

The family of 2D magnetic materials is continuously expanding because of the rapid discovery of exfoliable van der Waals magnetic systems. Recently, the synthesis of non-van der Waals magnetic "hematene" from common iron ore has opened an unconventional route to 2D material discovery. These non-van der Waals 2D systems are chemically stable and easily available and may have different or enhanced properties compared to their van der Waals counterparts. In this work, we have investigated and explained the nature of magnetic ordering in non-van der Waals 2D metal oxides. Two-dimensional hematene is found to be fully oxygen-passivated and stable under ambient conditions. It exhibits a striped ferrimagnetic ground state with a small net magnetic moment. Superexchange interactions are predicted to control the magnetic ground state of hematene, where pressure-induced spin crossover results in an observable net magnetic moment. Modulating the superexchange by alloying hematenes alters the magnetic ordering, tuning the system to a ferromagnetic ground state. Extending this strategy to the design of a new 2D material, we propose 2D chromia (α-Cr2O3) or "chromene", which, because of larger inter-transition metal distances and suppressed AFM superexchange, has a ferromagnetic ground state. We also show that tuning the magnetic ordering in these materials controls the transport properties by modulating the band gap, which may be of use in spintronic or catalytic applications.

Anisotropic Quantum Well Electro-Optics in Few-Layer Black Phosphorus.

The incorporation of electrically tunable materials into photonic structures such as waveguides and metasurfaces enables dynamic, electrical control of light propagation at the nanoscale. Few-layer black phosphorus is a promising material for these applications due to its in-plane anisotropic, quantum well band structure, with a direct band gap that can be tuned from 0.3 to 2 eV with a number of layers and subbands that manifest as additional optical transitions across a wide range of energies. In this Letter, we report an experimental investigation of three different, anisotropic electro-optic mechanisms that allow electrical control of the complex refractive index in few-layer black phosphorus from the mid-infrared to the visible: Pauli-blocking of intersubband optical transitions (the Burstein-Moss effect); the quantum-confined Stark effect; and the modification of quantum well selection rules by a symmetry-breaking, applied electric field. These effects generate near-unity tuning of the BP oscillator strength for some material thicknesses and photon energies, along a single in-plane crystal axis, transforming absorption from highly anisotropic to nearly isotropic. Lastly, the anisotropy of these electro-optical phenomena results in dynamic control of linear dichroism and birefringence, a promising concept for active control of the complex polarization state of light, or propagation direction of surface waves.

Topological Magnetic-Spin Textures in Two-Dimensional van der Waals Cr2Ge2Te6.

Two-dimensional (2D) van der Waals (vdW) materials show a range of profound physical properties that can be tailored through their incorporation in heterostructures and manipulated with external forces. The recent discovery of long-range ferromagnetic order down to atomic layers provides an additional degree of freedom in engineering 2D materials and their heterostructure devices for spintronics, valleytronics, and magnetic tunnel junction switches. Here, using direct imaging by cryo-Lorentz transmission electron microscopy we show that topologically nontrivial magnetic-spin states, skyrmionic bubbles, can be realized in exfoliated insulating 2D vdW Cr2Ge2Te6. Due to the competition between dipolar interactions and uniaxial magnetic anisotropy, hexagonally packed nanoscale bubble lattices emerge by field cooling with magnetic field applied along the out-of-plane direction. Despite a range of topological spin textures in stripe domains arising due to pair formation and annihilation of Bloch lines, bubble lattices with single chirality are prevalent. Our observation of topologically nontrivial homochiral skyrmionic bubbles in exfoliated vdW materials provides a new avenue for novel quantum states in atomically thin insulators for magneto-electronic and quantum devices.

Giant Enhancement of Photoluminescence Emission in WS2-Two-Dimensional Perovskite Heterostructures.

Transition metal dichalcogenides (TMDCs) and two-dimensional organic and inorganic hybrid lead halide perovskites (2DPVSKs) have emerged as highly promising materials for ultralight and ultrathin optoelectronics application. They both exhibit tunability of electronic properties such as band structure, and they can form heterostructures with various types of two-dimensional materials for novel physical properties not observed in single components. However, TMDCs exhibit poor emission efficiency due to defect states and direct-to-indirect interband transition, and 2DPVSKs suffer from poor stability in ambient atmosphere. Here we report that fabrication of TMDC-on-2DPVSK heterostructures using a solvent-free process leads to novel optical transitions unique to the heterostructure which arise from the hybrid interface and exhibit a strong photoluminescence. Moreover, a two orders of magnitude enhancement of the photoluminescence as compared to WS2 emission is observed. The TMDC on top of 2DPVSK also significantly improves the stability as compared to bare 2DPVSK. Enhanced emission can be explained by electronic structure modification of TMDC by novel interfacial interactions between TMDC and 2DPVSK materials, which shows promise of the heterostructure for high efficiency and stable optoelectronic devices.

Publisher Correction: Materials challenges for the Starshot lightsail.

In the version of this Perspective originally published, Fig. 1 was missing the following credit line from the caption: 'Background image from ESA/Hubble (A. Fujii).' This has now been corrected in the online versions of the Perspective.