Detalhe da pesquisa
1.
Investigation of the cap layer for improved GeSn multiple quantum well laser performance.
Opt Lett
; 48(7): 1626-1629, 2023 Apr 01.
Artigo
em Inglês
| MEDLINE | ID: mdl-37221726
2.
"GeSn Rule-23"-The Performance Limit of GeSn Infrared Photodiodes.
Sensors (Basel)
; 23(17)2023 Aug 24.
Artigo
em Inglês
| MEDLINE | ID: mdl-37687845
3.
Impact of nonlinear effects in Si towards integrated microwave-photonic applications.
Opt Express
; 29(19): 30844-30856, 2021 Sep 13.
Artigo
em Inglês
| MEDLINE | ID: mdl-34614803
4.
Investigation of SiGeSn/GeSn/SiGeSn single quantum well with enhanced well emission.
Nanotechnology
; 33(8)2021 Nov 30.
Artigo
em Inglês
| MEDLINE | ID: mdl-34763328
5.
Optically pumped lasing at 3 µm from compositionally graded GeSn with tin up to 22.3.
Opt Lett
; 43(19): 4558-4561, 2018 Oct 01.
Artigo
em Inglês
| MEDLINE | ID: mdl-30272682
6.
Study of direct bandgap type-I GeSn/GeSn double quantum well with improved carrier confinement.
Nanotechnology
; 29(46): 465201, 2018 Nov 16.
Artigo
em Inglês
| MEDLINE | ID: mdl-30191884
7.
Non-avalanche single photon detection without carrier transit-time delay through quantum capacitive coupling.
Opt Express
; 25(22): 26508-26518, 2017 Oct 30.
Artigo
em Inglês
| MEDLINE | ID: mdl-29092140
8.
Study of a SiGeSn/GeSn/SiGeSn structure toward direct bandgap type-I quantum well for all group-IV optoelectronics.
Opt Lett
; 42(3): 387-390, 2017 Feb 01.
Artigo
em Inglês
| MEDLINE | ID: mdl-28146483
9.
Systematic study of Si-based GeSn photodiodes with 2.6 µm detector cutoff for short-wave infrared detection.
Opt Express
; 24(5): 4519-4531, 2016 Mar 07.
Artigo
em Inglês
| MEDLINE | ID: mdl-29092279
10.
Temperature dependent spectral response and detectivity of GeSn photoconductors on silicon for short wave infrared detection.
Opt Express
; 22(13): 15639-52, 2014 Jun 30.
Artigo
em Inglês
| MEDLINE | ID: mdl-24977823
11.
The growth of Ge and direct bandgap Ge1-xSnx on GaAs (001) by molecular beam epitaxy.
RSC Adv
; 14(2): 1250-1257, 2024 Jan 02.
Artigo
em Inglês
| MEDLINE | ID: mdl-38174282
12.
Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy.
Nanomaterials (Basel)
; 14(11)2024 May 22.
Artigo
em Inglês
| MEDLINE | ID: mdl-38869534
13.
Study of all-group-IV SiGeSn mid-IR lasers with dual wavelength emission.
Sci Rep
; 13(1): 18515, 2023 Oct 28.
Artigo
em Inglês
| MEDLINE | ID: mdl-37898710
14.
Development of LTCC-packaged optocouplers as optical galvanic isolation for high-temperature applications.
Sci Rep
; 12(1): 11685, 2022 07 08.
Artigo
em Inglês
| MEDLINE | ID: mdl-35804033
15.
High-temperature analysis of optical coupling using AlGaAs/GaAs LEDs for high-density integrated power modules.
Sci Rep
; 12(1): 3168, 2022 Feb 24.
Artigo
em Inglês
| MEDLINE | ID: mdl-35210464
16.
Design and optimization of high temperature optocouplers as galvanic isolation.
Sci Rep
; 12(1): 2228, 2022 Feb 09.
Artigo
em Inglês
| MEDLINE | ID: mdl-35140272
17.
3D Nanoscale Mapping of Short-Range Order in GeSn Alloys.
Small Methods
; 6(5): e2200029, 2022 May.
Artigo
em Inglês
| MEDLINE | ID: mdl-35373530
18.
Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7.
Materials (Basel)
; 14(24)2021 Dec 11.
Artigo
em Inglês
| MEDLINE | ID: mdl-34947234
19.
Ge1-xSnx alloys: Consequences of band mixing effects for the evolution of the band gap Γ-character with Sn concentration.
Sci Rep
; 9(1): 14077, 2019 Oct 01.
Artigo
em Inglês
| MEDLINE | ID: mdl-31575881
20.
High Temperature and Power Dependent Photoluminescence Analysis on Commercial Lighting and Display LED Materials for Future Power Electronic Modules.
Sci Rep
; 9(1): 16758, 2019 Nov 14.
Artigo
em Inglês
| MEDLINE | ID: mdl-31728031