Heat-Assisted Magnetization Switching in Flexible Spin-Orbit Torque Devices.

Heat-assisted magnetic anisotropy engineering has been successfully used in selective magnetic writing and microwave amplification due to a large interfacial thermal resistance between the MgO barrier and the adjacent ferromagnetic layers. However, in spin-orbit torque devices, the writing current does not flow through the tunnel barrier, resulting in a negligible heating effect due to efficient heat dissipation. Here, we report a dramatically reduced switching current density of ∼2.59 MA/cm2 in flexible spin-orbit torque heterostructures, indicating a 98% decrease in writing energy consumption compared with that on a silicon substrate. The reduced driving current density is enabled by the dramatically decreased magnetic anisotropy due to Joule dissipation and the lower thermal conductivity of the flexible substrate. The large magnetic anisotropy could be fully recovered after the impulse, indicating retained high stability. These results pave the way for flexible spintronics with the otherwise incompatible advantages of low power consumption and high stability.

Magnetoelectric Sensor Operating in d15 Thickness-Shear Mode for High-Frequency Current Detection.

For the application of high-frequency current detection in power systems, such as very fast transient current, lightning current, partial discharge pulse current, etc., current sensors with a quick response are indispensable. Here, we propose a high-frequency magnetoelectric current sensor, which consists of a PZT piezoelectric ceramic and Metglas amorphous alloy. The proposed sensor is designed to work under d15 thickness-shear mode, with the resonant frequency around 1.029 MHz. Furthermore, the proposed sensor is fabricated as a high-frequency magnetoelectric current sensor. A comparative experiment is carried out between the tunnel magnetoresistance sensor and the magnetoelectric sensor, in the aspect of high-frequency current detection up to 3 MHz. Our experimental results demonstrate that the d15 thickness-shear mode magnetoelectric sensor has great potential for high-frequency current detection in smart grids.

Synergy of surface adsorption and intracellular accumulation for removal of uranium with Stenotrophomonas sp: Performance and mechanisms.

Uranium is well-known to have serious adverse effects on the ecological environment and human health. Bioremediation stands out among many remediation methods owing to its being economically feasible and environmentally friendly. This study reported a great promising strategy for eliminating uranium by Stenotrophomonas sp. CICC 23833 in the aquatic environment. The bacterium demonstrated excellent uranium adsorption capacity (qmax = 392.9 mg/g) because of the synergistic effect of surface adsorption and intracellular accumulation. Further analysis revealed that hydroxyl, carboxyl, phosphate groups and proteins of microorganisms were essential in uranium adsorption. Intracellular accumulation was closely related to cellular activity, and the efficiency of uranium processing by the permeabilized bacterial cells was significantly improved. In response to uranium stress, the bacterium was found to release multiple ions in conjunction with uranium adsorption, which facilitates the maintenance of bacterial life activities and the conversion of uranyl to precipitates. These above results indicated that Stenotrophomonas sp. Had great potential application value for the remediation of uranium.

Tunable Magnonic Chern Bands and Chiral Spin Currents in Magnetic Multilayers.

Realization of novel topological phases in magnonic band structures represents a new opportunity for the development of spintronics and magnonics with low power consumption. In this work, we show that in antiparallelly aligned magnetic multilayers, the long-range, chiral dipolar interaction between propagating magnons generates bulk bands with nonzero Chern integers and magnonic surface states carrying chiral spin currents. The surface states are highly localized and can be easily toggled between nontrivial and trivial phases through an external magnetic field. The realization of chiral surface spin currents in this dipolarly coupled heterostructure represents a magnonic implementation of the coupled wire model that has been extensively explored in electronic systems. Our work presents an easy-to-implement system for realizing topological magnonic surface states and low-dissipation spin current transport in a tunable manner.

Parasitic Ferromagnetism in Few-Layered Transition-Metal Chalcogenophosphate.

Since the rise of two-dimensional (2D) semiconductors, it seems that electronic devices will soon be upgraded with spintronics, in which the manipulation of spin degree of freedom endows it obvious advantages over conventional charge-based electronics. However, as the most crucial prerequisite for the above-mentioned expectation, 2D semiconductors with adjustable magnetic interaction are still rare, which has greatly hampered the promotion of spintronics. Recently, transition metal phosphates have attracted tremendous interest due to their intrinsic antiferromagnetism and potential applications in spintronics. In the work described herein, parasitic ferromagnetism is achieved for the first time by exfoliating an antiferromagnetic chalcogenophosphate to a few layers. Taking the transition metal chalcogenophosphate Mn2P2S6 as an example, the antiferromagnetic transition at the Néel temperature is completely suppressed, and the magnetic behaviors of the as-obtained few-layered Mn2P2S6 are dominated by parasitic ferromagnetism. We experimentally verify an electron redistribution by which part of the Mn 3d electrons migrate and redistribute on P atoms in few-layered Mn2P2S6 due to the introduced Mn vacancies. The results demonstrated here broaden the tunability of the material's magnetic properties and open up a new strategy to rationally design the magnetic behaviors of 2D semiconductors, which could accelerate the applications of spintronics.

Variational first hyperpolarizabilities of 2,3-naphtho-15-crown-5 ether derivatives with cation-complexing: a potential and selective cation detector.

Crown ethers, as a kind of heterocycle, have been the subject of great interest over recent decades due to their selective capability to bind to metal cations. The use of a constant crown ether, such as naphtho-15-crown-5 (N15C5), and varied metal cations (Li+, Na+, K+, Be2+, Mg2+, Ca2+, Co2+, Ni2+, Cu2+) makes it possible to determine the contributions of the metal cations to nonlinear optical (NLO) responses and to design an appropriate NLO-based cation detector. N15C5 and its metal cation derivatives have been systematically investigated by density functional theory. It is found that the dependency of the first hyperpolarizability relies on the metal cation, especially for transition metals. The decrease of the first hyperpolarizabilities for alkali metal cation derivatives is due to their relatively low oscillator strengths, whereas the significant increase of the first hyperpolarizabilities for transition metal cation derivatives can be further illustrated by their low transition energies, large amplitudes and separate distributions of first hyperpolarizability density. Thus, the alkali metal and transition metal cations are distinguishable and the transition metal cations are easier to detect by utilizing the variations in NLO responses.

Spontaneous Cooling Enables High-Quality Perovskite Wafers for High-Sensitivity X-Ray Detectors with a Low-Detection Limit.

Developing high-quality perovskite wafers is essential for integrating perovskite technology throughout the chip industry chain. In this article, a spontaneous cooling strategy with a hot-pressing technique is presented to develop high-purity, wafer-scale, pinhole-free perovskite wafers with a reflective surface. This method can be extended to a variety of perovskite wafers, including organic-inorganic, 2D, and lead-free perovskites. Besides, the size of the wafer with diameters of 10, 15, and 20 mm can be tailored by changing the mold. Furthermore, the mechanism of spontaneous cooling for improving the quality of perovskite wafers is revealed. Finally, the high-quality lead-free Cs3Cu2I5 perovskite wafers demonstrate excellent X-ray detection performances with a high sensitivity of 3433.6 µC Gyair -1 cm-2 and a low detection limit of 33.17 nGyair s-1. Moreover, the Cs3Cu2I5 wafers exhibit outstanding environmental and operational stability even without encapsulation. These research presents a spontaneous cooling strategy to achieve wafer-scale, high-quality perovskites with mirror-like surfaces for X-ray detection, paving the way for integrating perovskites into electronic and optoelectronic devices and promoting the practical application of perovskite X-ray detectors.

Ultralow Electric Current-Assisted Magnetization Switching due to Thermally Engineered Magnetic Anisotropy.

Control of magnetic anisotropy in thin films with perpendicular magnetic anisotropy is of paramount importance for the development of spintronics with ultralow-energy consumption and high density. Traditional magnetoelectric heterostructures utilized the synergistic effect of piezoelectricity and magnetostriction to realize the electric field control of magnetic anisotropy, resulting in additional fabrication and modulation processes and a complicated device architecture. Here, we have systematically investigated the electric current tuning of the magnetic properties of the metallic NiCo2O4 film with intrinsic perpendicular magnetic anisotropy. Ferrimagnetic-to-paramagnetic phase transition has been induced through Joule heating, resulting in a rapid decrease of both magnetic coercivity and moment. An ultralow current density of 2.5 × 104 A/cm2, which is 2 to 3 orders magnitude lower than that of conventional spin transfer torque devices, has been verified to be effective for the control of the magnetic anisotropy of NiCo2O4. Successful triggering of magnetic switching has been realized through the application of a current pulse. These findings provide new perspectives toward the electric control of magnetic anisotropy and design of spintronics with an ultralow driving current density.

Field-free Spin-Orbit Torque Perpendicular Magnetization Switching Induced by Metallic Multilayers.

The realization of the all-electrical manipulation of perpendicular magnetization switching is essential for next-generation information storage technologies and spintronic devices. Current-induced spin-orbit torque (SOT) has attracted tremendous research interest. However, this approach usually relies on external magnetic field to achieve deterministic switching, which greatly limits SOT devices moving toward practical applications. Here, we report the measurement of SOT from the [Pt/Au] multilayer with composition gradient along the thickness direction. The multilayer exhibits a much larger SOT efficiency than pure Pt, and current-induced field-free magnetization switching has been realized in Co/[Pt/Au] heterostructures. Anomalous Hall resistance loop shift measurements indicate that the [Pt/Au] multilayer can produce spin current with z-direction polarization. Moreover, the results of the control experiments show that the Pt/Au interface is the primary cause of the z-direction polarized spin current for triggering field-free switching, whereas the compositional gradient effect is peripheral. We speculate that the field-free switching originates from the synergetic interface effect and Dzyaloshinskii-Moriya interaction. Our work not only paves the way for SOT devices toward practical application but also provides novel insights into the mechanisms governing current-induced deterministic perpendicular magnetization switching.

Spontaneous crystallization of strongly confined CsSnxPb1-xI3 perovskite colloidal quantum dots at room temperature.

The scalable and low-cost room temperature (RT) synthesis for pure-iodine all-inorganic perovskite colloidal quantum dots (QDs) is a challenge due to the phase transition induced by thermal unequilibrium. Here, we introduce a direct RT strongly confined spontaneous crystallization strategy in a Cs-deficient reaction system without polar solvents for synthesizing stable pure-iodine all-inorganic tin-lead (Sn-Pb) alloyed perovskite colloidal QDs, which exhibit bright yellow luminescence. By tuning the ratio of Cs/Pb precursors, the size confinement effect and optical band gap of the resultant CsSnxPb1-xI3 perovskite QDs can be well controlled. This strongly confined RT approach is universal for wider bandgap bromine- and chlorine-based all-inorganic and iodine-based hybrid perovskite QDs. The alloyed CsSn0.09Pb0.91I3 QDs show superior yellow emission properties with prolonged carrier lifetime and significantly increased colloidal stability compared to the pristine CsPbI3 QDs, which is enabled by strong size confinement, Sn2+ passivation and enhanced formation energy. These findings provide a RT size-stabilized synthesis pathway to achieve high-performance pure-iodine all-inorganic Sn-Pb mixed perovskite colloidal QDs for optoelectronic applications.

Greatly Improved the Tunable Amplitude of Ferromagnetism Based on Interface Effect of Flexible Pt/YIG Heterojunctions.

Flexible quantum spin electronic devices based on ferromagnetic insulators have attracted wide attention due to their outstanding advantages of low-power dissipation and noncontact sensing. However, ferromagnetic insulators, such as monocrystalline yttrium iron garnet (Y3Fe5O12, YIG), hve weak stress effects with a small magnetostrictive coefficient (λ110, 10 ppm), making it difficult to achieve a large magnetic tunable amplitude. In this paper, large-scale (with a diameter of 40 mm), flexible Pt/YIG heterojunctions were obtained by double-cavity magnetron sputtering technology, indicating typical soft magnetism and good bending fatigue characteristics. Here, the 3 nm thickness of the Pt layer triggers an obvious magnetic proximity effect, in which the in-plane ferromagnetic resonance field is decreased by 70 Oe compared to flexible Cu/YIG heterojunctions. Meanwhile, it shows a wide tunable amplitude of 110 Oe under the flexible bending stresses, which is induced by the sensitive interface effect of Pt (3 nm)/YIG heterojunctions. The saturation magnetization of Pt/YIG heterojunctions is negatively correlated with Pt thickness rather than the relative stability of Cu/YIG heterojunctions, depending on the magnetic proximity effect. It brings greater application possibilities for flexible stress-sensitive magnetic oxides in spin logic electronic devices.

Twisted Integration of Complex Oxide Magnetoelectric Heterostructures via Water-Etching and Transfer Process.

HIGHLIGHTS: The (001)-oriented ferromagnetic La0.67Sr0.33MnO3 films are stuck onto the (011)-oriented ferroelectric single-crystal 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 substrate with 0° and 45° twist angle. By applying a 7.2 kV cm-1 electric field, the coexistence of uniaxial and fourfold in-plane magnetic anisotropy is observed in 45° Sample, while a typical uniaxial anisotropy is found in 0° Sample. Manipulating strain mode and degree that can be applied to epitaxial complex oxide thin films have been a cornerstone of strain engineering. In recent years, lift-off and transfer technology of the epitaxial oxide thin films have been developed that enabled the integration of heterostructures without the limitation of material types and crystal orientations. Moreover, twisted integration would provide a more interesting strategy in artificial magnetoelectric heterostructures. A specific twist angle between the ferroelectric and ferromagnetic oxide layers corresponds to the distinct strain regulation modes in the magnetoelectric coupling process, which could provide some insight in to the physical phenomena. In this work, the La0.67Sr0.33MnO3 (001)/0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 (011) (LSMO/PMN-PT) heterostructures with 45º and 0º twist angles were assembled via water-etching and transfer process. The transferred LSMO films exhibit a fourfold magnetic anisotropy with easy axis along LSMO < 110 >. A coexistence of uniaxial and fourfold magnetic anisotropy with LSMO [110] easy axis is observed for the 45° Sample by applying a 7.2 kV cm-1 electrical field, significantly different from a uniaxial anisotropy with LSMO [100] easy axis for the 0° Sample. The fitting of the ferromagnetic resonance field reveals that the strain coupling generated by the 45° twist angle causes different lattice distortion of LSMO, thereby enhancing both the fourfold and uniaxial anisotropy. This work confirms the twisting degrees of freedom for magnetoelectric coupling and opens opportunities for fabricating artificial magnetoelectric heterostructures.

Surface Engineering Design of Nano FeS@Stenotrophomonas sp. by Ultrasonic Chemical Method for Efficient U(VI) and Th(IV) Extraction.

Nano-FeS has great potential for use in the management of radioactive contaminants. In this paper, we prepared a FeS@Stenotrophomonas sp. composite material by ultrasonic chemistry, and it showed excellent removal of uranium and thorium from the solution. Through optimization of the experimental conditions, it was found that the maximum adsorption capacities for uranium and thorium reached 481.9 and 407.5 mg/g for a composite made with a synthetic ratio of 1:1, pH 5 and 3.5, respectively, for U and Th, and sonication for 20 min. Compared with those of FeS or Stenotrophomonas alone, the removal capacity was greatly improved. The results of a mechanistic study indicated that efficient removal of the uranium and thorium was due to ion exchange, reduction, and microbial surface adsorption. FeS@Stenotrophomonas sp. could be applied to U(VI) and Th(IV) extraction for radioactive water.

Highly flexible anisotropic magnetoresistance sensor for wearable electronics.

The emerging market of wearable devices for tracking and positioning requires the development of highly flexible magnetic sensors. Due to the stable magnetoresistance ratio and simple fabrication process, sensors based on the anisotropic magnetoresistance (AMR) effect have been proposed as promising candidates. However, the stability of AMR sensors under different bending situations has rarely been investigated. In this work, we proposed a flexible AMR magnetic sensor deposited on an ultra-thin Kapton substrate, which exhibits excellent anti-fatigue behavior at different bending curvatures ranging from 1/3 to 1/10 mm-1. Experimental results show that the sensitivity of our proposed flexible AMR sensor remains as high as 0.25 Oe-1 after being bent 500 times, showing promising potential for application in wearable electronic devices.

Strong Electron-Phonon Coupling Mediates Carrier Transport in BiFeO3.

The electron-phonon interaction is known as one of the major mechanisms determining electrical and thermal properties. In particular, it alters the carrier transport behaviors and sets fundamental limits to carrier mobility. Establishing how electrons interact with phonons and the resulting impact on the carrier transport property is significant for the development of high-efficiency electronic devices. Here, carrier transport behavior mediated by the electron-phonon coupling in BiFeO3 epitaxial thin films is directly observed. Acoustic phonons are generated by the inverse piezoelectric effect and coupled with photocarriers. Via the electron-phonon coupling, doughnut shape carrier distribution has been observed due to the coupling between hot carriers and phonons. The hot carrier quasi-ballistic transport length can reach 340 nm within 1 ps. The results suggest an effective approach to investigating the effects of electron-phonon interactions with temporal and spatial resolutions, which is of great importance for designing and improving electronic devices.

Strain-Induced Magnetoelectric Coupling in Fe3O4/BaTiO3 Nanopillar Composites.

Magnetoelectric coupling properties are limited to the substrate clamping effect in traditional ferroelectric/ferromagnetic heterostructures. Here, Fe3O4/BaTiO3 nanopillar composites are successfully constructed. The well-ordered BaTiO3 nanopillar arrays are prepared through template-assisted pulsed laser deposition. The Fe3O4 layer is coated on BaTiO3 nanopillar arrays by atomic layer deposition. The nanopillar arrays and heterostructure are confirmed by scanning electron microscopy and transmission electron microscopy. A large thermally driven magnetoelectric coupling coefficient of 395 Oe °C-1 near the phase transition of BaTiO3 (orthorhombic to rhombohedral) is obtained, indicating a strong strain-induced magnetoelectric coupling effect. The enhanced magnetoelectric coupling effect originated from the reduced substrate clamping effect and increased the interface area in nanopillar structures. This work opens a door toward cutting-edge potential applications in spintronic devices.

Self-Assembled Epitaxial Ferroelectric Oxide Nanospring with Super-Scalability.

Oxide nanosprings have attracted many research interests because of their anticorrosion, high-temperature tolerance, oxidation resistance, and enhanced-mechanic-response from unique helix structures, enabling various applications like nanomanipulators, nanomotors, nanoswitches, sensors, and energy harvesters. However, preparing oxide nanosprings is a challenge for their intrinsic lack of elasticity. Here, an approach for preparing self-assembled, epitaxial, ferroelectric nanosprings with built-in strain due to the lattice mismatch in freestanding La0.7 Sr0.3 MnO3 /BaTiO3 (LSMO/BTO) bilayer heterostructures is developed. It is found that these LSMO/BTO nanosprings can be extensively pulled or pushed up to their geometrical limits back and forth without breaking, exhibiting super-scalability with full recovery capability. The phase-field simulations reveal that the excellent scalability originates from the continuous ferroelastic domain structures, resulting from twisting under co-existing axial and shear strains. In addition, the oxide heterostructural springs exhibit strong resilience due to the limited plastic deformation nature and the built-in strain between the bilayers. This discovery provides an alternative way for preparing and operating functional oxide nanosprings that can be applied to various technologies.

Electro-opto-mechano driven reversible multi-state memory devices based on photocurrent in Bi0.9Eu0.1FeO3/La0.67Sr0.33MnO3/PMN-PT heterostructures.

A single device with extensive new functionality is highly attractive for the increasing demands for complex and multifunctional optoelectronics. Multi-field coupling has been drawing considerable attention because it leads to materials that can be simultaneously operated under several external stimuli (e.g. magnetic field, electric field, electric current, light, strain, etc.), which allows each unit to store multiple bits of information and thus enhance the memory density. In this work, we report an electro-opto-mechano-driven reversible multi-state memory device based on photocurrent in Bi0.9Eu0.1FeO3 (BEFO)/La0.67Sr0.33MnO3 (LSMO)/0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 (PMN-PT) heterostructures. It is found that the short-circuit current density (J sc) can be switched by the variation of the potential barrier height and depletion region width at the Pt/BEFO interface modulated by light illumination, external strain, and ferroelectric polarization reversal. This work opens up pathways toward the emergence of novel device design features with dynamic control for developing high-performance electric-optical-mechanism integrated devices based on the BiFeO3-based heterostructures.

Electric-field control of spin dynamics during magnetic phase transitions.

Controlling magnetization dynamics is imperative for developing ultrafast spintronics and tunable microwave devices. However, the previous research has demonstrated limited electric-field modulation of the effective magnetic damping, a parameter that governs the magnetization dynamics. Here, we propose an approach to manipulate the damping by using the large damping enhancement induced by the two-magnon scattering and a nonlocal spin relaxation process in which spin currents are resonantly transported from antiferromagnetic domains to ferromagnetic matrix in a mixed-phased metallic alloy FeRh. This damping enhancement in FeRh is sensitive to its fraction of antiferromagnetic and ferromagnetic phases, which can be dynamically tuned by electric fields through a strain-mediated magnetoelectric coupling. In a heterostructure of FeRh and piezoelectric PMN-PT, we demonstrated a more than 120% modulation of the effective damping by electric fields during the antiferromagnetic-to-ferromagnetic phase transition. Our results demonstrate an efficient approach to controlling the magnetization dynamics, thus enabling low-power tunable electronics.

Electric Field-Tunable Giant Magnetoresistance (GMR) Sensor with Enhanced Linear Range.

The operation mechanism of giant magnetoresistance (GMR) sensors relies on the linear response of the magnetization direction to an external magnetic field. Since the magnetic anisotropy of ferromagnetic layers can be manipulated by a strain-mediated magnetoelectric coupling effect, we propose a tunable GMR magnetic field sensor design that allows for voltage tuning of the linear range and sensitivity. A spin valve structure Ru/CoFe/Cu/CoFe/IrMn/Ru is grown on a PMN-PT (011) substrate, and the magnetization directions of ferromagnetic layers can be controlled by an electric field. An adjustable linear magnetoresistance is therefore induced. Based on the magnetoelectric coupling effect and spin valve, we prepared tunable GMR magnetic field sensors with bridge structures. The linear sensing range of a DC magnetic field is enhanced 6 times by applying an electric field of 14 kV/cm. The electrically tunable GMR sensor fulfills the requirements to work at different magnetic field ranges in the same configuration, therefore exhibiting great potential for applications in the Internet of things.