Spectrum adapted the expectation-maximization algorithm for high-throughput peak shift analysis.

We introduce a spectrum-adapted expectation-maximization (EM) algorithm for high-throughput analysis of a large number of spectral datasets by considering the weight of the intensity corresponding to the measurement energy steps. Proposed method was applied to synthetic data in order to evaluate the performance of the analysis accuracy and calculation time. Moreover, the proposed method was performed to the spectral data collected from graphene and MoS2 field-effect transistors devices. The calculation completed in less than 13.4 s per set and successfully detected systematic peak shifts of the C 1s in graphene and S 2p in MoS2 peaks. This result suggests that the proposed method can support the investigation of peak shift with two advantages: (1) a large amount of data can be processed at high speed; and (2) stable and automatic calculation can be easily performed.

All 2D Heterostructure Tunnel Field-Effect Transistors: Impact of Band Alignment and Heterointerface Quality.

Van der Waals heterostructures are the ideal material platform for tunnel field-effect transistors (TFETs) because a band-to-band tunneling (BTBT) dominant current is feasible at room temperature (RT) because of ideal, dangling bond-free heterointerfaces. However, achieving subthreshold swing (SS) values lower than 60 mV dec-1 of the Boltzmann limit is still challenging. In this work, we systematically studied the band alignment and heterointerface quality in n-MoS2 channel heterostructure TFETs. By selecting a p+-MoS2 source with a sufficiently high doping level, stable gate modulation to a type III band alignment was achieved regardless of the number of MoS2 channel layers. For the gate stack formation, it was found that the deposition of Al2O3 as the top gate introduces defect states for the generation current under reverse bias, while the integration of a hexagonal boron nitride (h-BN) top gate provides a defect-free, clean interface, resulting in the BTBT dominant current even at RT. All 2D heterostructure TFETs produced by combining the type III n-MoS2/p+-MoS2 heterostructure with the h-BN top-gate insulator resulted in low SS values at RT.

Microscopic photoelectron analysis of single crystalline LiCoO2 particles during the charge-discharge in an all solid-state lithium ion battery.

We report synchrotron-based operando soft X-ray microscopic photoelectron spectroscopy under charge-discharge control of single crystalline LiCoO2 (LCO) particles as an active electrode material for an all solid-state lithium-ion battery (LIB). Photoelectron mapping and the photoelectron spectrum of a selected microscopic region are obtained by a customized operando cell for LIBs. During the charge process, a more effective Li extraction from a side facet of the single crystalline LCO particle than from the central part is observed, which ensures the reliability of the system as an operando microscopic photoelectron analyzer that can track changes in the electronic structure of a selected part of the active particle. Based on these assessments, the no drastic change in the Co 2p XPS spectra during charge-discharge of LCO supports that the charge-polarization may occur at the oxygen side by strong hybridization between Co 3d and O 2p orbitals. The success of tracking the electronic-structure change at each facet of a single crystalline electrode material during charge-discharge is a major step toward the fabrication of innovative active electrode materials for LIBs.

Operation Mechanism of GaN-based Transistors Elucidated by Element-Specific X-ray Nanospectroscopy.

With the rapid depletion of communication-frequency resources, mainly due to the explosive spread of information communication devices for the internet of things, GaN-based high-frequency high-power transistors (GaN-HEMTs) have attracted considerable interest as one of the key devices that can operate in the high-frequency millimeter-wave band. However, GaN-HEMT operation is destabilized by current collapse phenomena arising from surface electron trapping (SET), which has not been fully understood thus far. Here, we conduct quantitative mechanistic studies on SET in GaN-HEMTs by applying element- and site-specific photoelectron nanospectroscopy to a GaN-HEMT device under operation. Our study reveals that SET is induced by a large local electric field. Furthermore, surface passivation using a SiN thin film is demonstrated to play a dual role: electric-field weakening and giving rise to chemical interactions that suppress SET. Our findings can contribute to the realization of high-capacity wireless communication systems based on GaN-HEMTs.

Variable-temperature independently driven four-tip scanning tunneling microscope.

The authors have developed an ultrahigh vacuum (UHV) variable-temperature four-tip scanning tunneling microscope (STM), operating from room temperature down to 7 K, combined with a scanning electron microscope (SEM). Four STM tips are mechanically and electrically independent and capable of positioning in arbitrary configurations in nanometer precision. An integrated controller system for both of the multitip STM and SEM with a single computer has also been developed, which enables the four tips to operate either for STM imaging independently and for four-point probe (4PP) conductivity measurements cooperatively. Atomic-resolution STM images of graphite were obtained simultaneously by the four tips. Conductivity measurements by 4PP method were also performed at various temperatures with the four tips in square arrangement with direct contact to the sample surface.

Investigation of the enhanced photocathodic activity of La5Ti2CuS5O7 photocathodes in H2 evolution by synchrotron radiation nanospectroscopy.

The local electronic structures of La5Ti2MS5O7 (M = Cu, Ag) particulate photoelectrodes with and without Ga doping were investigated, using a photoemission spectroscopy system with a lateral resolution of approximately 100 nm. The band alignments for La5Ti2MS5O7 were determined on the basis of pinpoint photoemission spectra acquired at optimal positions on the sample surfaces. A clear upward chemical potential shift of approximately 0.35 eV was observed in the case of Ga-doped La5Ti2CuS5O7. On the other hand, the electronic structure of La5Ti2AgS5O7 remained almost unaffected by Ga doping. These results explain the enhanced photocathodic response of La5Ti2CuS5O7 upon Ga doping.

Microscopically-tuned band structure of epitaxial graphene through interface and stacking variations using Si substrate microfabrication.

Graphene exhibits unusual electronic properties, caused by a linear band structure near the Dirac point. This band structure is determined by the stacking sequence in graphene multilayers. Here we present a novel method of microscopically controlling the band structure. This is achieved by epitaxy of graphene on 3C-SiC(111) and 3C-SiC(100) thin films grown on a 3D microfabricated Si(100) substrate (3D-GOS (graphene on silicon)) by anisotropic etching, which produces Si(111) microfacets as well as major Si(100) microterraces. We show that tuning of the interface between the graphene and the 3C-SiC microfacets enables microscopic control of stacking and ultimately of the band structure of 3D-GOS, which is typified by the selective emergence of semiconducting and metallic behaviours on the (111) and (100) portions, respectively. The use of 3D-GOS is thus effective in microscopically unlocking various potentials of graphene depending on the application target, such as electronic or photonic devices.

Quasi-one-dimensional quantized states in an epitaxial Ag film on a one-dimensional surface superstructure.

The in-plane energy dispersion of quantized states in an ultrathin Ag film formed on the one-dimensional (1D) surface superstructure Si(111)-(4 x 1)-In shows clear 1D anisotropy instead of the isotropic two-dimensional free-electron-like behavior expected for an isolated metal film. The present photoemission results demonstrate that an atomic layer at the film-substrate interface can regulate the dimensionality of electron motion in quantum films.