Broadband silicon nitride integrated polarization rotators at 780 nm.

Polarization management, and in particular polarization rotation, is becoming increasingly important for photonic integrated circuits (PICs). While fiber-optic networks are generally polarization insensitive, the large aspect ratio of high-index-contrast PIC waveguides leads to a large polarization-dependent response of integrated components such as waveguides, optical cavities, couplers, etc. Although foundry-processed polarization rotators operating at telecom and datacom wavelengths (C- and O-band) have been demonstrated, to date, there have been few reports of devices operating at shorter wavelengths. This work demonstrates silicon nitride (SiN) polarization rotators operating from λ=700-1000 nm (the I/Z-band) that take advantage of optical coupling between two waveguiding layers in a standard foundry process. We demonstrate a broadband white-light polarization measurement setup that enables precise characterization of the polarization-dependent transmission of photonic waveguide devices. Measurements on foundry-processed devices confirm full TE-to-TM rotation exhibiting a maximum polarization extinction ratio (PER) approaching 20 dB (limited by our measurement setup), and an exceptionally large bandwidth of up to 160 nm with an insertion loss less than 0.2 dB. Beam propagation method (3D-BPM) simulations show good agreement with experimental data and enable the device parameters to be adjusted to accommodate different operating wavelengths and geometries with no changes to the existing foundry process. This work opens up opportunities for applications in quantum information and bio-sensing where operation at λ<1000nm is needed.

Foundry-based waveguide-enhanced Raman spectroscopy in the visible.

Waveguide-enhanced Raman spectroscopy (WERS) is an analytical technique frequently employed for chemical and biological sensing. Operation at visible wavelengths to harness the inverse fourth power with excitation wavelength signal scaling of Raman scattering intensity is desirable, to combat the inherent inefficiency of Raman spectroscopy. Until now, WERS demonstrations in the visible have required custom materials and fabrication, resulting in high losses and low yields. In this work, we demonstrate a silicon nitride (SIN) visible WERS platform fabricated in a 300 mm complementary metal-oxide semiconductor (CMOS) foundry. We measure the propagation loss, coupling loss, WERS signal, and background for WERS spirals designed for 532 nm and 633 nm pump wavelengths. We compare these results to the state-of-the-art near-infrared WERS platform at 785 nm. Further, we theoretically validate the relative performance of each of these WERS configurations, and we discuss the optimal WERS configuration at visible wavelengths. We conclude that a configuration optimized for 785 nm pumping provides the greatest signal-to-background ratio in the fingerprint region of the spectrum, and pumping at 633 nm maximizes Stokes signal out to 3000 cm-1.

MEMS-tunable polarization management in photonic integrated circuits.

Optical fibers are generally polarization-insensitive while photonic integrated circuits (PICs) often exhibit a large polarization dependence due to the high-aspect-ratio and high-index-contrast of integrated waveguides. As PICs become more mature there is an increasing need for tunable polarization management on-chip. Although micro-electro-mechanical systems (MEMS) are increasingly finding application in PICs for optical switching and phase shifting, they have so far not found wide application for polarization management. In this work we propose two optical MEMS architectures for polarization management enabling tunable polarization splitting and rotation - key functions so far lacking in PICs. The first structure consists of a directional coupler with a MEMS-tunable gap enabling a continuously-variable polarization splitting ratio. A second architecture consists of a symmetry-breaking MEMS perturber suspended over an air-cladded waveguide enabling tunable polarization rotation. For both architectures we simulate a polarization extinction exceeding 25 dB, and the operating bandwidth can be as large as 100 nm. We conclude with a discussion of actuation schemes and examine fabrication considerations for implementation in PIC foundries.

Micro-electro-mechanically tunable optical phase matching and mode conversion.

Mode-division multiplexing (MDM) enables a large increase in the information-carrying capacity of an optical network. Recently, chip-scale MDM devices that can switch different mode orders to different output waveguides have been demonstrated. However, an important milestone showing dynamically tunable mode-order conversion in a single compact device has so far not been reported. In this work, we demonstrate via simulation and measurement a new, to the best of our knowledge, approach for reconfigurable mode conversion using optical micro-electro-mechanical systems (MEMS) to locally modify the effective index in an asymmetric coupler. Modeling shows that dynamic tuning to increase or decrease the mode order is possible. Measurements on fabricated devices are consistent with simulations of reconfigurable mode conversion based on tunable phase matching. Our experimental results demonstrate reconfigurable TE0-TE2 to TE0-TE1 conversion and validate this new tunable phase-matching approach for mode-division multiplexing.

Optical and geometric parameter extraction for photonic integrated circuits.

We describe an in-situ technique to characterize the material refractive indices and waveguide geometry for photonic integrated circuits over hundreds of nanometers of optical bandwidth. By combining white light spectroscopy with unbalanced Mach-Zehnder interferometers, we can simultaneously and accurately extract the core thickness, core width, core refractive index, and cladding refractive index. This information is important for the technological maturation of photonic integrated circuit foundry fabrication. Capturing the inter-wafer and intra-wafer variation of these parameters is necessary to predict the yield of photonic components and for overall process quality control. Refractive indices are found with a 1-σ error of between 0.1% and 0.5%, and geometric parameters are found with an error of between 3 nm and 7 nm. Our analysis and validation are implemented and verified using the same waveguide layers as are used in the standard photonic wafer build, without any external techniques such as ellipsometry or microscopy.

Germanium-on-silicon waveguides for long-wave integrated photonics: ring resonance and thermo-optics.

Germanium-on-silicon (GOS) represents the leading platform for foundry-based long-wave infrared photonic integrated circuits (LWIR PICs), due to its CMOS compatibility and absence of oxides. We describe ring resonance (Q-factors between 2×103 and 1×104) and thermo-optic tunability in germanium-on-silicon waveguides throughout the long-wave-infrared. The ring resonances are characterized by Q-factors and couplings that agree with measurements of propagation loss (as low as 6 dB/cm) and simulations and are enabled by broadband edge coupling (12dB/facet over a 3 dB bandwidth of over 4 microns). We demonstrate the furthest into the infrared that ring resonators have been measured and show the potential of this platform for photonic integration and waveguide spectroscopy at wavelengths from 7 microns to beyond 11 microns.

Passive photonic integration of lattice filters for waveguide-enhanced Raman spectroscopy.

To perform waveguide-enhanced Raman spectroscopy (WERS) or fluorescence spectroscopy in a compact device, the optical fibers to couple the passive photonic circuit to the laser source and detector require attachment directly to the die. This necessitates the integration of edge couplers and waveguide-based filters to isolate the fiber background emission from the on-chip signal, while efficiently coupling the pump laser and detector to the input and output fibers, respectively. In this work, we experimentally demonstrate the successful integration of four-port lattice filters with sensing spirals and inverse-taper edge couplers in a passive photonic circuit. We further show that the four-port lattice filter enables the collection of backscattered on-chip Stokes signal, improving and simplifying overall system performance.

Loss reduction in electromechanically tunable microring cavities.

Nanophotonic structures coupled with mechanics enable large effective index perturbation. To date, however, the relation between index tuning and induced optical loss has not been considered in detail. In this work we present an in-depth study of optical loss mechanisms in an electromechanically-tunable waveguide filter. Gradient electric forces modify the coupling between a microring optical cavity and a suspended micromechanical (MEMS) perturber resulting in a measured tuning greater than one free-spectral range (FSR) and an effective index tuning of 3×10-2. We examine various loss contributions and find, for certain conditions, a surprising reduction in loss with greater MEMS-induced mode perturbation. Modeling confirms the device behavior and loss mitigation is discussed.

Waveguide-enhanced Raman spectroscopy of trace chemical warfare agent simulants.

We report the measurement of waveguide-enhanced Raman spectra from trace concentrations of four vapor-phase chemical warfare agent simulants: dimethyl methylphosphonate, diethyl methylphosphonate, trimethyl phosphate, and triethyl phosphate. The spectra are obtained using highly evanescent nanophotonic silicon nitride waveguides coated with a naturally reversible hyperbranched carbosilane sorbent polymer and exhibit extrapolated one-σ detection limits as low as 5 ppb. We use a finite-element model to explain the polarization and wavelength properties of the differential spectra. In addition, we assign spectral features to both the analyte and the sorbent, and show evidence of changes to both due to hydrogen bonding.

Broadband near-infrared emission in silicon waveguides.

Silicon photonic integrated circuit foundries enable wafer-level fabrication of entire electro-optic systems-on-a-chip for applications ranging from datacommunication to lidar to chemical sensing. However, silicon's indirect bandgap has so far prevented its use as an on-chip optical source for these systems. Here, we describe a fullyintegrated broadband silicon waveguide light source fabricated in a state-of-the-art 300-mm foundry. A reverse-biased p-i-n diode in a silicon waveguide emits broadband near-infrared optical radiation directly into the waveguide mode, resulting in nanowatts of guided optical power from a few milliamps of electrical current. We develop a one-dimensional Planck radiation model for intraband emission from hot carriers to theoretically describe the emission. The brightness of this radiation is demonstrated by using it for broadband characterization of photonic components including Mach-Zehnder interferometers and lattice filters, and for waveguide infrared absorption spectroscopy of liquid-phase analytes. This broadband silicon-based source can be directly integrated with waveguides and photodetectors with no change to existing foundry processes and is expected to find immediate application in optical systems-on-a-chip for metrology, spectroscopy, and sensing.

Figure-of-Merit Characterization of Hydrogen-Bond Acidic Sorbents for Waveguide-Enhanced Raman Spectroscopy.

The optical properties of several hydrogen-bond acidic sorbent materials are evaluated in situ to assess their suitability for waveguide-enhanced Raman spectroscopy (WERS) of vapor-phase organophosphonates. A number of characteristics critical to WERS are evaluated for each sorbent: infrared absorption, Raman spectral background, and the limit of detection for a test hydrogen-bond-basic analyte (dimethyl methylphosphonate, DMMP). We describe the chemical properties of the sorbents that differentiate their optical properties for sensing. Then, we introduce a sorbent figure-of-merit that quantifies these differences and provides a framework to assess the quality of newly developed sorbent materials.