Noise investigation of CW and mode-locked harmonic cavity nanolasers.

We theoretically investigate the noise properties of harmonic cavity nanolasers by introducing a model of coupled equations of evolution of the modes, taking spontaneous emission into account. This model is used to predict the noise among the nanolaser Hermite-Gaussian modes, both in continuous wave and mode-locked regimes. In the first case, the laser noise is described in terms of noise modes, thus illustrating the role of the laser dynamics. In the latter case, this leads to the calculation of the fluctuations of the pulse train parameters. The influence of the different laser parameters, including the amount of saturated absorption and the Henry factors, on the noise of the mode-locked regime is discussed in details.

Robustness of mode-locking in harmonic cavity nanolasers subjected to potential distortions.

We theoretically analyze the robustness to potential distortion of mode-locking in a harmonic cavity nanolaser sustaining oscillation of Hermite-Gaussian modes. Different types of imperfections of the harmonic potential that create the Hermite-Gaussian modes are considered: the non-parabolicity of the potential and the possible random errors in the shape of the potential. The influence of the different laser parameters, including the Henry factors of the gain medium and the saturable absorber, on the robustness of the mode-locked regime is discussed in detail.

Efficient type II second harmonic generation in an indium gallium phosphide on insulator wire waveguide aligned with a crystallographic axis.

We theoretically and experimentally investigate type II second harmonic generation in III-V-on-insulator wire waveguides. We show that the propagation direction plays a crucial role and that longitudinal field components can be leveraged for robust and efficient conversion. We predict that the maximum theoretical conversion is larger than that of type I second harmonic generation for similar waveguide dimensions and reach an experimental conversion efficiency of 12%/W, limited by the propagation loss.

High frequency optomechanical disk resonators in III-V ternary semiconductors: erratum.

An erratum is presented to correct for a typo in the appendix of the original article.

Mode Locking of the Hermite-Gaussian Modes of a Nanolaser.

Mode locking is predicted in a nanolaser cavity forming an effective photonic harmonic potential. The cavity is substantially more compact than a Fabry-Perot resonator with a comparable pulsing period, which is here controlled by the potential. In the limit of instantaneous gain and absorption saturation, mode locking corresponds to a stable dissipative soliton, which is very well approximated by the coherent state of a quantum mechanical harmonic oscillator. This property is robust against noninstantaneous material response and nonzero phase-intensity coupling.

Silicon-Phosphorene Nanocavity-Enhanced Optical Emission at Telecommunications Wavelengths.

Generating and amplifying light in silicon (Si) continues to attract significant attention due to the possibility of integrating optical and electronic components in a single material platform. Unfortunately, silicon is an indirect band gap material and therefore an inefficient emitter of light. With the rise of integrated photonics, the search for silicon-based light sources has evolved from a scientific quest to a major technological bottleneck for scalable, CMOS-compatible, light sources. Recently, emerging two-dimensional materials have opened the prospect of tailoring material properties based on atomic layers. Few-layer phosphorene, which is isolated through exfoliation from black phosphorus (BP), is a great candidate to partner with silicon due to its layer-tunable direct band gap in the near-infrared where silicon is transparent. Here we demonstrate a hybrid silicon optical emitter composed of few-layer phosphorene nanomaterial flakes coupled to silicon photonic crystal resonators. We show single-mode emission in the telecommunications band of 1.55 µm ( Eg = 0.8 eV) under continuous wave optical excitation at room temperature. The solution-processed few-layer BP flakes enable tunable emission across a broad range of wavelengths and the simultaneous creation of multiple devices. Our work highlights the versatility of the Si-BP material platform for creating optically active devices in integrated silicon chips.

Fully embedded photonic crystal cavity with Q=0.6 million fabricated within a full-process CMOS multiproject wafer.

A two dimensional photonic crystal (PhC) resonator, based on a recent design concept, entirely embedded in Silica, is fabricated in a CMOS full-process multiproject wafer, including additional steps such as implantation, metalization, Germanium deposition and planarization. A large loaded Q-factor (5.9 × 105) is achieved without removal of the silica cladding. A statistical analysis over 56 devices leads to an average value for the loaded Q of 4 × 105, in close agreement with calculations. An upper boundary for the fabrication disorder is estimated to 1.2 nm.

Nonlinearities in GaAs cavities with high CW input powers enabled by photo-oxidation quenching through ALD encapsulation.

We demonstrate that conformal encapsulation using atomic layer deposition of GaAs nano-cavity resonator made of photonic crystal cavity prevents photo-induced oxidation. This improvement allows injecting a large quantity of energy in the resonator without any degradation of the material, thus enabling spectral stability of the resonance. We prove second harmonic and third harmonic generation over more than one decade of pump power variation, thanks to this encapsulation, with a total efficiency (ηSHG = 8.3 × 10-5 W-1 and ηTHG = 1.2 × 10-3 W-2 ) and a large net output energy for both operations (PSHGout=0.2nW and PTHGout=8pW).

High frequency optomechanical disk resonators in III-V ternary semiconductors.

Optomechanical systems based on nanophotonics are advancing the field of precision motion measurement, quantum control and nanomechanical sensing. In this context III-V semiconductors offer original assets like the heteroepitaxial growth of optimized metamaterials for photon/phonon interactions. GaAs has already demonstrated high performances in optomechanics but suffers from two photon absorption (TPA) at the telecom wavelength, which can limit the cooperativity. Here, we investigate TPA-free III-V semiconductor materials for optomechanics applications: GaAs lattice-matched In0.5Ga0.5P and Al0.4Ga0.6As. We report on the fabrication and optical characterization of high frequency (500-700 MHz) optomechanical disks made out of these two materials, demonstrating high optical and mechanical Q in ambient conditions. Finally we achieve operating these new devices as laser-sustained optomechanical self-oscillators, and draw a first comparative study with existing GaAs systems.

Tuning out disorder-induced localization in nanophotonic cavity arrays.

Weakly coupled high-Q nanophotonic cavities are building blocks of slow-light waveguides and other nanophotonic devices. Their functionality critically depends on tuning as resonance frequencies should stay within the bandwidth of the device. Unavoidable disorder leads to random frequency shifts which cause localization of the light in single cavities. We present a new method to finely tune individual resonances of light in a system of coupled nanocavities. We use holographic laser-induced heating and address thermal crosstalk between nanocavities using a response matrix approach. As a main result we observe a simultaneous anticrossing of 3 nanophotonic resonances, which were initially split by disorder.

GaInP on oxide nonlinear photonic crystal technology.

Heat dissipation is improved in nonlinear III-V photonic crystal waveguides owing to the hybrid III-V/Silicon integration platform, allowing efficient four-wave mixing in the continuous-wave regime. A conversion efficiency of -17.6 dB is demonstrated with a pump power level below 100 mW in a dispersion-engineered waveguide with a flat group index of 28 over a 10 nm bandwidth.

Acceleration of the nonlinear dynamics in p-doped indium phosphide nanoscale resonators.

We demonstrated a twofold acceleration of the fast time constant characterizing the recovery of a p-doped indium-phosphide photonic crystal all-optical gate. Time-resolved spectral analysis is compared to a three-dimensional drift-diffusion model for the carrier dynamics, demonstrating the transition from the ambipolar to the faster minority carrier dominated diffusion regime. This opens the perspective for faster yet efficient nanophotonic all-optical gates.

Measurement of the linear thermo-optical coefficient of Ga0.51In0.49P using photonic crystal nanocavities.

Ga0.51In0.49P is a promising candidate for thermally tunable nanophotonic devices due to its low thermal conductivity. In this work we study its thermo-optical response. We obtain the linear thermo-optical coefficient dn/dT=2.0±0.3·10-4 K-1 by investigating the transmission properties of a single mode-gap photonic crystal nanocavity.

Measurement of the profiles of disorder-induced localized resonances in photonic crystal waveguides by local tuning.

Near the band edge of photonic crystal waveguides, localized modes appear due to disorder. We demonstrate a new method to elucidate spatial profile of the localized modes in such systems using precise local tuning. Using deconvolution with the known thermal profile, the spatial profile of a localized mode with quality factor (Q) > 105 is successfully reconstructed with a resolution of 2.5 µm.

High-performance and power-efficient 2×2 optical switch on Silicon-on-Insulator.

A compact (15µm × 15µm) and highly-optimized 2×2 optical switch is demonstrated on a CMOS-compatible photonic crystal technology. On-chip insertion loss are below 1 dB, static and dynamic contrast are 40 dB and >20 dB respectively. Owing to efficient thermo-optic design, the power consumption is below 3 mW while the switching time is 1 µs.

Nonlinear properties of dispersion engineered InGaP photonic wire waveguides in the telecommunication wavelength range.

We propose high index contrast InGaP photonic wires as a platform for the integration of nonlinear optical functions in the telecom wavelength window. We characterize the linear and nonlinear properties of these waveguide structures. Waveguides with a linear loss of 12 dB/cm and which are coupled to a single mode fiber through gratings with a -7.5 dB coupling loss are realized. From four wave mixing experiments, we extract the real part of the nonlinear parameter γ to be 475 ± 50 W(-1)m(-1) and from nonlinear transmission measurements we infer the absence of two-photon absorption and measure a three-photon absorption coefficient of (2.5 ± 0.5) x 10(-2) cm(3)GW(-2).

Dispersion of coupled mode-gap cavities.

The dispersion of a coupled resonator optical waveguide made of photonic crystal mode-gap cavities is pronouncedly asymmetric. This asymmetry cannot be explained by the standard tight binding model. We show that the fundamental cause of the asymmetric dispersion is the inherent dispersive cavity mode profile; i.e., the mode wave function depends on the driving frequency, not the eigenfrequency. This occurs because the photonic crystal cavity resonances do not form a complete set. We formulate a dispersive mode coupling model that accurately describes the asymmetric dispersion without introducing any new free parameters.

Dispersive-wave-based octave-spanning supercontinuum generation in InGaP membrane waveguides on a silicon substrate.

We demonstrate the generation of an octave-spanning supercontinuum in InGaP membrane waveguides on a silicon substrate pumped by a 1550-nm femtosecond source. The broadband nature of the supercontinuum in these dispersion-engineered high-index-contrast waveguides is enabled by dispersive wave generation on both sides of the pump as well as by the low nonlinear losses inherent to the material. We also measure the coherence properties of the output spectra close to the pump wavelength and find that the supercontinuum is highly coherent at least in this wavelength range.

Schottky MSM junctions for carrier depletion in silicon photonic crystal microcavities.

Collection of free carriers is a key issue in silicon photonics devices. We show that a lateral metal-semiconductor-metal Schottky junction is an efficient and simple way of dealing with that issue in a photonic crystal microcavity. Using a simple electrode design, and taking into account the optical mode profile, the resulting carrier distribution in the structure is calculated. We show that the corresponding effective free carrier lifetime can be reduced by 50 times when the bias is tuned. This allows one to maintain a high cavity quality factor under strong optical injection. In the fabricated structures, carrier depletion is correlated with transmission spectra and directly visualized by Electron Beam Induced Current pictures. These measurements demonstrate the validity of this carrier extraction principle. The design can still be optimized in order to obtain full carrier depletion at a smaller energy cost.

Switching characteristics of an InP photonic crystal nanocavity: experiment and theory.

The dynamical properties of an InP photonic crystal nanocavity are experimentally investigated using pump-probe techniques and compared to simulations based on coupled-mode theory. Excellent agreement between experimental results and simulations is obtained when employing a rate equation model containing three time constants, that we interpret as the effects of fast carrier diffusion from an initially localized carrier distribution and the slower effects of surface recombination and bulk recombination. The variation of the time constants with parameters characterizing the nanocavity structure is investigated. The model is further extended to evaluate the importance of the fast and slow carrier relaxation processes in relation to patterning effects in the device, as exemplified by the case of all-optical wavelength conversion.