Ultralow-Energy-Consumption Photosynaptic Transistor Utilizing Conjugated Polymers/Perovskite Quantum Dots Nanocomposites With Ligand Density Optimization.

The photosynaptic transistor stands as a promising contender for overcoming the von Neumann bottleneck in the realm of photo-communication. In this context, photonic synaptic transistors is developed through a straightforward solution process, employing an organic semiconducting polymer with pendant-naphthalene-containing side chains (PDPPNA) in combination with ligand-density-engineered CsPbBr3 perovskite quantum dots (PQDs). This fabrication approach allows the devices to emulate fundamental synaptic behaviors, encompassing excitatory postsynaptic current, paired-pulse facilitation, the transition from short-to-long-term memory, and the concept of "learning experience." Notably, the phototransistor, incorporating the blend of the PDPPNA and CsPbBr3 PQDs washed with ethyl acetate, achieved an exceptional memory ratio of 104. Simultaneously, the same device exhibited an impressive paired-pulse facilitation ratio of 223% at a moderate operating voltage of -4 V and an extraordinarily low energy consumption of 0.215 aJ at an ultralow operating voltage of -0.1 mV. Consequently, these low-voltage synaptic devices, constructed with a pendant side-chain engineering of organic semiconductors and a ligand density engineering of PQDs through a simple fabrication process, exhibit substantial potential for replicating the visual memory capabilities of the human brain.

2D Dual Gate Field-Effect Transistor Enabled Versatile Functions.

Advanced computing technologies such as distributed computing and the Internet of Things require highly integrated and multifunctional electronic devices. Beyond the Si technology, 2D-materials-based dual-gate transistors are expected to meet these demands due to the ultra-thin body and the dangling-bond-free surface. In this work, a molybdenum disulfide (MoS2 ) asymmetric-dual-gate field-effect transistor (ADGFET) with an In2 Se3 top gate and a global bottom gate is designed. The independently controlled double gates enable the device to achieve an on/off ratio of 106 with a low subthreshold swing of 94.3 mV dec-1 while presenting a logic function. The coupling effect between the double gates allows the top gate to work as a charge-trapping layer, realizing nonvolatile memory (105 on/off ratio with retention time over 104 s) and six-level memory states. Additionally, ADGFET displays a tunable photodetection with the responsivity reaching the highest value of 857 A W-1 , benefiting from the interface coupling between the double gates. Meanwhile, the photo-memory property of ADGFET is also verified by using the varying exposure dosages-dependent illumination. The multifunctional applications demonstrate that the ADGFET provides an alternative way to integrate logic, memory, and sensing into one device architecture.

Spacer Engineering Enables Fine-Tuned Thin Film Microstructure and Efficient Charge Transport for Ultrasensitive 2D Perovskite-Based Heterojunction Phototransistors and Optoelectronic Synapses.

2D Ruddlesden-Popper phase layered perovskites (RPLPs) hold great promise for optoelectronic applications. In this study, a series of high-performance heterojunction phototransistors (HPTs) based on RPLPs with different organic spacer cations (namely butylammonium (BA+), cyclohexylammonium (CyHA+), phenethylammonium (PEA+), p-fluorophenylethylammonium (p-F-PEA+), and 2-thiophenethylammonium (2-ThEA+)) are fabricated successfully, in which high-mobility organic semiconductor 2,7-dioctyl[1]benzothieno[3,2-b]benzothiophene is adopted to form type II heterojunction channels with RPLPs. The 2-ThEA+-RPLP-based HPTs show the highest photosensitivity of 3.18 × 107 and the best detectivity of 9.00 × 1018 Jones, while the p-F-PEA+-RPLP-based ones exhibit the highest photoresponsivity of 5.51 × 106 A W-1 and external quantum efficiency of 1.32 × 109%, all of which are among the highest reported values to date. These heterojunction systems also mimicked several optically controllable fundamental characteristics of biological synapses, including excitatory postsynaptic current, paired-pulse facilitation, and the transition from short-term memory to long-term memory states. The device based on 2-ThEA+-RPLP film shows an ultra-high PPF index of 234%. Moreover, spacer engineering brought fine-tuned thin film microstructures and efficient charge transport/transfer, which contributes to the superior photodetection performance and synaptic functions of these RPLP-based HPTs. In-depth structure-property correlations between the organic spacer cations/RPLPs and thin film microstructure/device performance are systematically investigated.

High-performance MoS2phototransistors with Hf1-xAlxO back-gate dielectric layer grown by plasma enhanced atomic layer deposition.

Molybdenum sulfide (MoS2) as an emerging optoelectronic material, shows great potential for phototransistors owing to its atomic thickness, adjustable band gap, and low cost. However, the phototransistors based on MoS2have been shown to have some issues such as large gate leakage current, and interfacial scattering, resulting in suboptimal optoelectronic performance. Thus, Al-doped hafnium oxide (Hf1-xAlx) is proposed to be a dielectric layer of the MoS2-based phototransistor to solve this problem because of the relatively higher crystallization temperature and dielectric constant. Here, a high-performance MoS2phototransistor with Hf1-xAlxO gate dielectric layer grown by plasma-enhanced atomic layer deposition has been fabricated and studied. The results show that the phototransistor exhibits a high responsivity of 2.2 × 104A W-1, a large detectivity of 1.7 × 1017Jones, a great photo-to-dark current ratio of 2.2 × 106%, and a high external quantum efficiency of 4.4 × 106%. The energy band alignment and operating mechanism were further used to clarify the reason for the enhanced MoS2phototransistor. The suggested MoS2phototransistors could provide promising strategies in further optoelectronic applications.

Polarity-Tunable Field Effect Phototransistors.

Field-effect phototransistors feature gate voltage modulation, allowing dynamic performance control and significant signal amplification. A field-effect phototransistor can be designed to be inherently either unipolar or ambipolar in its response. However, conventionally, once a field-effect phototransistor has been fabricated, its polarity cannot be changed. Herein, a polarity-tunable field-effect phototransistor based on a graphene/ultrathin Al2O3/Si structure is demonstrated. Light can modulate the gating effect of the device and change the transfer characteristic curve from unipolar to ambipolar. This photoswitching in turn produces a significantly improved photocurrent signal. The introduction of an ultrathin Al2O3 interlayer also enables the phototransistor to achieve a responsivity in excess of 105 A/W, a 3 dB bandwidth of 100 kHz, a gain-bandwidth product of 9.14 × 1010 s-1, and a specific detectivity of 1.91 × 1013 Jones. This device architecture enables the gain-bandwidth trade-off in current field-effect phototransistors to be overcome, demonstrating the feasibility of simultaneous high-gain and fast-response photodetection.

Dual Optoelectronic Organic Field-Effect Device: Combination of Electroluminescence and Photosensitivity.

Merging the functionality of an organic field-effect transistor (OFET) with either a light emission or a photoelectric effect can increase the efficiency of displays or photosensing devices. In this work, we show that an organic semiconductor enables a multifunctional OFET combining electroluminescence (EL) and a photoelectric effect. Specifically, our computational and experimental investigations of a six-ring thiophene-phenylene co-oligomer (TPCO) revealed that this material is promising for OFETs, light-emitting, and photoelectric devices because of the large oscillator strength of the lowest-energy singlet transition, efficient luminescence, pronounced delocalization of the excited state, and balanced charge transport. The fabricated OFETs showed a photoelectric response for wavelengths shorter than 530 nm and simultaneously EL in the transistor channel, with a maximum at ~570 nm. The devices demonstrated an EL external quantum efficiency (EQE) of ~1.4% and a photoelectric responsivity of ~0.7 A W-1, which are among the best values reported for state-of-the-art organic light-emitting transistors and phototransistors, respectively. We anticipate that our results will stimulate the design of efficient materials for multifunctional organic optoelectronic devices and expand the potential applications of organic (opto)electronics.

Highly Sensitive Broadband Phototransistors Based on Gradient Tin/Lead Mixed Perovskites.

Highly sensitive broadband photodetectors are critical to numerous cutting-edge technologies such as biomedical imaging, environment monitoring, and night vision. Here, phototransistors based on mixed Sn/Pb perovskites are reported, which demonstrate ultrahigh responsivity, gain and specific detectivity in a broadband from ultraviolet to near-infrared region. The interface properties of the perovskite phototransistors are optimized by a special three-step cleaning-healing-cleaning treatment, leading to a high hole mobility in the channel. The highly sensitive performance of the mixed Sn/Pb perovskite phototransistors can be attributed to the vertical compositional heterojunction automatically formed during the film deposition, which is helpful for the separation of photocarriers thereby enhancing a photogating effect in the perovskite channel. This work demonstrates a convenient approach to achieving high-performance phototransistors through tuning compositional gradient in mixed-metal perovskite channels.

Performance Enhancement of Lead-Free 2D Tin Halide Perovskite Transistors by Surface Passivation and Its Impact on Non-Volatile Photomemory Characteristics.

Two-dimensional (2D) tin (Sn)-based perovskites have recently received increasing research attention for perovskite transistor application. Although some progress is made, Sn-based perovskites have long suffered from easy oxidation from Sn2+ to Sn4+ , leading to undesirable p-doping and instability. In this study, it is demonstrated that surface passivation by phenethylammonium iodide (PEAI) and 4-fluorophenethylammonium iodide (FPEAI) effectively passivates surface defects in 2D phenethylammonium tin iodide (PEA2 SnI4 ) films, increases the grain size by surface recrystallization, and p-dopes the PEA2 SnI4 film to form a better energy-level alignment with the electrodes and promote charge transport properties. As a result, the passivated devices exhibit better ambient and gate bias stability, improved photo-response, and higher mobility, for example, 2.96 cm2 V-1 s-1 for the FPEAI-passivated films-four times higher than the control film (0.76 cm2 V-1 s-1 ). In addition, these perovskite transistors display non-volatile photomemory characteristics and are used as perovskite-transistor-based memories. Although the reduction of surface defects in perovskite films results in reduced charge retention time due to lower trap density, these passivated devices with better photoresponse and air stability show promise for future photomemory applications.

Isotope Engineered Fluorinated Single and Bilayer Graphene: Insights into Fluorination Selectivity, Stability, and Defect Passivation.

Tailoring the physicochemical properties of graphene through functionalization remains a major interest for next-generation technological applications. However, defect formation due to functionalization greatly endangers the intrinsic properties of graphene, which remains a serious concern. Despite numerous attempts to address this issue, a comprehensive analysis has not been conducted. This work reports a two-step fluorination process to stabilize the fluorinated graphene and obtain control over the fluorination-induced defects in graphene layers. The structural, electronic and isotope-mass-sensitive spectroscopic characterization unveils several not-yet-resolved facts, such as fluorination sites and CF bond stability in partially-fluorinated graphene (F-SLG). The stability of fluorine has been correlated to fluorine co-shared between two graphene layers in fluorinated-bilayer-graphene (F-BLG). The desorption energy of co-shared fluorine is an order of magnitude higher than the CF bond energy in F-SLG due to the electrostatic interaction and the inhibition of defluorination in the F-BLG. Additionally, F-BLG exhibits enhanced light-matter interaction, which has been utilized to design a proof-of-concept field-effect phototransistor that produces high photocurrent response at a time <200 µs. Thus, the study paves a new avenue for the in-depth understanding and practical utilization of fluorinated graphenic carbon.

Inorganic-Organic Hybrid Phototransistor Array with Enhanced Photogating Effect for Dynamic Near-Infrared Light Sensing and Image Preprocessing.

Narrow-band-gap organic semiconductors have emerged as appealing near-infrared (NIR) sensing materials by virtue of their unique optoelectronic properties. However, their limited carrier mobility impedes the implementation of large-area, dynamic NIR sensor arrays. In this work, high-performance inorganic-organic hybrid phototransistor arrays are achieved for NIR sensing, by taking advantage of the high electron mobility of In2O3 and the strong NIR absorption of a BTPV-4F:PTB7-Th bulk heterojunction (BHJ) with an enhanced photogating effect. As a result, the hybrid phototransistors reach a high responsivity of 1393.0 A W-1, a high specific detectivity of 4.8 × 1012 jones, and a fast response of 0.72 ms to NIR light (900 nm). Meanwhile, an integrated 16 × 16 phototransistor array with a one-transistor-one-phototransistor (1T1PT) architecture is achieved. On the basis of the enhanced photogating effect, the phototransistor array can not only achieve real-time, dynamic NIR light mapping but also implement image preprocessing, which is promising for advanced NIR image sensors.

Organic Single-Crystalline Microwire Arrays toward High-Performance Flexible Near-Infrared Phototransistors.

Flexible organic near-infrared (NIR) phototransistors hold promising prospects for potential applications such as noninvasive bioimaging, health monitoring, and biometric authentication. For integrated circuits of high-performance devices, organic single-crystalline micro-/nanostructures with precise positioning are prominently anticipated. However, the manufacturing of organic single-crystalline arrays remains a conundrum due to difficulties encountered in patterning arrays of dewetting processes at micron-scale confined space and modulating the dewetting dynamics. Herein, we utilize a capillary-bridge lithography strategy to fabricate organic 1D arrays with high quality, homogeneous size, and deterministic location toward high-performance flexible organic NIR phototransistors. Regular micro-liquid stripes and unidirectional dewetting are synchronously achieved by adapting micropillar templates with asymmetric wettability. As a result, high-throughput 1D arrays based organic field-effect transistors exhibit high electron mobility up to 9.82 cm2  V-1  s-1 . Impressively, flexible NIR phototransistors also show outstanding photoelectronic performances with a photosensitivity of 9.87 × 105 , a responsivity of 1.79 × 104  A W-1 , and a specific detectivity of 3.92 × 1014 Jones. This work paves a novel way to pattern high-throughput organic single-crystalline microarrays toward flexible NIR organic optoelectronics.

Bio-Inspired In-Sensor Compression and Computing Based on Phototransistors.

The biological nervous system possesses a powerful information processing capability, and only needs a partial signal stimulation to perceive the entire signal. Likewise, the hardware implementation of an information processing system with similar capabilities is of great significance, for reducing the dimensions of data from sensors and improving the processing efficiency. Here, it is reported that indium-gallium-zinc-oxide thin film phototransistors exhibit the optoelectronic switching and light-tunable synaptic characteristics for in-sensor compression and computing. Phototransistor arrays can compress the signal while sensing, to realize in-sensor compression. Additionally, a reservoir computing network can also be implemented via phototransistors for in-sensor computing. By integrating these two systems, a neuromorphic system for high-efficiency in-sensor compression and computing is demonstrated. The results reveal that even for cases where the signal is compressed by 50%, the recognition accuracy of reconstructed signal still reaches ≈96%. The work paves the way for efficient information processing of human-computer interactions and the Internet of Things.

Gate-Tunable Plasmon-Enhanced Photodetection in a Monolayer MoS2 Phototransistor with Ultrahigh Photoresponsivity.

Monolayer transition metal dichalcogenides (TMDs), direct bandgap materials with an atomically thin nature, are promising materials for electronics and photonics, especially at highly scaled lateral dimensions. However, the characteristically low total absorption of photons in the monolayer TMD has become a challenge in the access to and realization of monolayer TMD-based high-performance optoelectronic functionalities and devices. Here, we demonstrate gate-tunable plasmonic phototransistors (photoFETs) that consist of monolayer molybdenum disulfide (MoS2) photoFETs integrated with the two-dimensional plasmonic crystals. The plasmonic photoFET has an ultrahigh photoresponsivity of 2.7 × 104 AW-1, achieving a 7.2-fold enhancement in the photocurrent compared to pristine photoFETs. This benefits predominately from the combination of the enhancement of the photon-absorption-rate via the strongly localized-electromagnetic-field and the gate-tunable plasmon-induced photocarrier-generation-rate in the monolayer MoS2. These results demonstrate a systematic methodology for designing ultrathin plasmon-enhanced photodetectors based on monolayer TMDs for next-generation ultracompact optoelectronic devices in the trans-Moore era.

Dual-Mode Learning of Ambipolar Synaptic Phototransistor Based on 2D Perovskite/Organic Heterojunction for Flexible Color Recognizable Visual System.

Artificial intelligence vision systems (AIVSs) with information sensing, processing, and storage functions are increasingly gaining attention in the science and technology community. Although synapse phototransistor (SPT) is one of the essential components in AIVSs, solution-processed large-area photonic synapses that can detect and recognize multi-wavelength light are highly desirable. One of the major challenges in this area is the inability of the available materials to distinguish colors from the visible light to the near-infrared (NIR) light for single carrier (hole-only or electron-only) SPTs owing to lack of cognitive elements. Herein, 2D perovskite/organic heterojunction (PEA2 SnI4 /Y6) ambipolar SPTs (POASPTs) are developed via solution process. The POASPTs can display dual-mode learning process, which can convert light signals into postsynaptic currents with excitement/inhibition modes (hole-transporting region) or inhibition/excitement (electron-transporting region). The POASPTs exhibit high responsivity to visible light (104 A W-1 ) and NIR light (200 A W-1 ), and effectively perform learning and memory simultaneously. The flexible POASPT arrays can successfully recognize the images of different colors of light. This study reveals that the fabricated POASPTs have great potentials in the development of large-area, high-efficiency, and low-cost AIVSs.

Base-width modulation effects on the optoelectronic characteristics of n-ITO/p-NiO/n-ZnO heterojunction bipolar phototransistors.

ITO/NiO/ZnO npn heterojunction bipolar phototransistors (HBPTs) with various base widths are fabricated using a radio-frequency sputtering system. The effects of base-width modulation on the optoelectronic characteristics of the prepared HBPTs are studied. The dark current of HBPTs decreases with increasing base width because the injected electrons from the emitter are recombined in the wide base region. The photocurrent increases with decreasing base width, which is attributed to higher emitter-base injection efficiency. The responsivity increases with the collector-emitter voltage (VCE) in the HBPTs with a 100 nm base width, whereas the responsivity sharply decreases atVCE> 4 V for the HBPTs with a thinner base width (80 nm) due to the punch-through effect. In contrast, the responsivity approaches saturation at largeVCEfor HBPTs with a thicker base width (120 nm). The responsivity and detectivity decrease with increasing incident light intensity, which is caused by an increase in the base recombination loss. The HBPTs with a base width of 100 nm exhibits the largest responsivity and detectivity; their detectivity is higher than that of HBPTs with base widths of 80 and 120 nm by approximately two and three orders, respectively.

Multifunctional Deformable Organic Semiconductor Single Crystals.

We report the first organic semiconductor crystal with a unique combination of properties that can be used as a multifunctional optoelectronic device. Mechanically flexible single crystals of 9,10-bis(phenylethynyl)anthracene (BPEA) can function as a phototransistor, photoswitch, and an optical waveguide. The material can exist as two structurally different solid phases, with single crystals of one of the phases being elastic at room temperature while those of the other are brittle and become plastic at higher temperature. The output and transfer characteristics of the devices were characterized by measuring the generation and temporal response of the switching of the photogenerated current. The current-voltage characteristics of both phases exhibit linearity and symmetry about the positive and negative voltages. The crystals transmit light in the telecommunications range with significantly low optical loss for an organic crystalline material.

A Dual-Gate MoS2 Photodetector Based on Interface Coupling Effect.

2D transition metal dichalcogenides (TMDs) based photodetectors have shown great potential for the next generation optoelectronics. However, most of the reported MoS2 photodetectors function under the photogating effect originated from the charge-trap mechanism, which is difficult for quantitative control. Such devices generally suffer from a poor compromise between response speed and responsivity (R) and large dark current. Here, a dual-gated (DG) MoS2 phototransistor operating based on the interface coupling effect (ICE) is demonstrated. By simultaneously applying a negative top-gate voltage (VTG ) and positive back-gate voltage (VBG ) to the MoS2 channel, the photogenerated holes can be effectively trapped in the depleted region under TG. An ultrahigh R of ≈105 A W-1 and detectivity (D*) of ≈1014 Jones are achieved in several devices with different thickness under Pin of 53 µW cm-2 at VTG = -5 V. Moreover, the response time of the DG phototransistor can also be modulated based on the ICE. Based on these systematic measurements of MoS2 DG phototransistors, the results show that the ICE plays an important role in the modulation of photoelectric performances. The results also pave the way for the future optoelectrical application of 2D TMDs materials and prompt for further investigation in the DG structured phototransistors.

Substantially Improving Device Performance of All-Inorganic Perovskite-Based Phototransistors via Indium Tin Oxide Nanowire Incorporation.

All-inorganic halide perovskites (IHPs) have attracted enormous attention due to their intrinsically high optical absorption coefficient and superior ambient stabilities. However, the photosensitivity of IHP-based photodetectors is still restricted by their poor conductivities. Here, a facile design of hybrid phototransistors based on the CsPbBr3 thin film and indium tin oxide (ITO) nanowires (NWs) integrated into a InGaZnO channel in order to achieve both high photoresponsivity and fast response is reported. The metallic ITO NWs are employed as electron pumps and expressways to efficiently extract photocarriers from CsPbBr3 and inject electrons into InGaZnO. The obtained device exhibits the outstanding responsivity of 4.9 × 106 A W-1 , which is about 100-fold better than the previous best results of CsPbBr3 -based photodetectors, together with the fast response (0.45/0.55 s), long-term stability (200 h in ambient), and excellent mechanical flexibility. By operating the phototransistor in the depletion regime, an ultrahigh specific detectivity up to 7.6 × 1013 Jones is achieved. More importantly, the optimized spin-coating manufacturing process is highly beneficial for achieving uniform InGaZnO-ITO/perovskite hybrid films for high-performance flexible detector arrays. All these results can not only indicate the potential of these hybrid phototransistors but also provide a valuable insight into the design of hybrid material systems for high-performance photodetection.

Vertical 0D-Perovskite/2D-MoS2 van der Waals Heterojunction Phototransistor for Emulating Photoelectric-Synergistically Classical Pavlovian Conditioning and Neural Coding Dynamics.

Optoelectronic-neuromorphic transistors are vital for next-generation nanoscale brain-like computational systems. However, the hardware implementation of optoelectronic-neuromorphic devices, which are based on conventional transistor architecture, faces serious challenges with respect to the synchronous processing of photoelectric information. This is because mono-semiconductor material cannot absorb adequate light to ensure efficient light-matter interactions. In this work, a novel neuromorphic-photoelectric device of vertical van der Waals heterojunction phototransistors based on a colloidal 0D-CsPbBr3 -quantum-dots/2D-MoS2 heterojunction channel is proposed using a polymer ion gel electrolyte as the gate dielectric. A highly efficient photocarrier transport interface is established by introducing colloidal perovskite quantum dots with excellent light absorption capabilities on the 2D-layered MoS2 semiconductor with strong carrier transport abilities. The device exhibits not only high photoresponsivity but also fundamental synaptic characteristics, such as excitatory postsynaptic current, paired-pulse facilitation, dynamic temporal filter, and light-tunable synaptic plasticity. More importantly, efficiency-adjustable photoelectronic Pavlovian conditioning and photoelectronic hybrid neuronal coding behaviors can be successfully implemented using the optical and electrical synergy approach. The results suggest that the proposed device has potential for applications associated with next-generation brain-like photoelectronic human-computer interactions and cognitive systems.

Atomic-Thin ZnO Sheet for Visible-Blind Ultraviolet Photodetection.

The atomic-thin 2D semiconductors have emerged as plausible candidates for future optoelectronics with higher performance in terms of the scaling process. However, currently reported 2D photodetectors still have huge shortcomings in ultraviolet and especially visible-blind wavelengths. Here, a simple and nontoxic surfactant-assisted synthesis strategy is reported for the controllable growth of atomically thin (1.5 to 4 nm) ZnO nanosheets with size ranging from 3 to 30 µm. Benefit from the short carbon chains and the water-soluble ability of sodium dodecyl sulfate (SDS), the synthesized ZnO nanosheets possess high crystal quality and clean surface, leading to good compatibility with traditional micromanufacturing technology and high sensitivity to UV light. The photodetectors constructed with ZnO demonstrate the highest responsivity (up to 2.0 × 104 A W-1 ) and detectivity (D* = 6.83 × 1014 Jones) at a visible-blind wavelength of 254 nm, and the photoresponse speed is optimized by the 400 °C annealing treatment (τR  = 3.97 s, τD  = 5.32 s), thus the 2D ZnO can serve as a promising material to fill in the gap for deep-UV photodetection. The method developed here opens a new avenue to controllably synthesize 2D nonlayered materials and accelerates their applications in high-performance optoelectronic devices.