Heusler alloys for spintronic devices: review on recent development and future perspectives.

Heusler alloys are theoretically predicted to become half-metals at room temperature (RT). The advantages of using these alloys are good lattice matching with major substrates, high Curie temperature above RT and intermetallic controllability for spin density of states at the Fermi energy level. The alloys are categorised into half- and full-Heusler alloys depending upon the crystalline structures, each being discussed both experimentally and theoretically. Fundamental properties of ferromagnetic Heusler alloys are described. Both structural and magnetic characterisations on an atomic scale are typically carried out in order to prove the half-metallicity at RT. Atomic ordering in the films is directly observed by X-ray diffraction and is also indirectly probed via the temperature dependence of electrical resistivity. Element specific magnetic moments and spin polarisation of the Heusler alloy films are directly measured using X-ray magnetic circular dichroism and Andreev reflection, respectively. By employing these ferromagnetic alloy films in a spintronic device, efficient spin injection into a non-magnetic material and large magnetoresistance are also discussed. Fundamental properties of antiferromagnetic Heusler alloys are then described. Both structural and magnetic characterisations on an atomic scale are shown. Atomic ordering in the Heusler alloy films is indirectly measured by the temperature dependence of electrical resistivity. Antiferromagnetic configurations are directly imaged by X-ray magnetic linear dichroism and polarised neutron reflection. The applications of the antiferromagnetic Heusler alloy films are also explained. The other non-magnetic Heusler alloys are listed. A brief summary is provided at the end of this review.

Global snapshot of the effects of the COVID-19 pandemic on the research activities of materials scientists between Spring and Autumn 2020.

We conducted a global survey on the effects of the COVID-19 pandemic on the research activities of materials scientists by distributing a questionnaire on 9 October 2020 with a response deadline of 23 October 2020. The questions covered issues such as access to labs, effectiveness of online conferences, and effects on doctoral students for the period covering the first lockdowns until the relaxation of restrictions in late September 2020 in many countries. The survey also included online interviews with eminent materials scientists who shared their local experiences during this period. The interviews were compiled as a series of audio conversations for The STAM Podcast that is freely available worldwide. Our findings included that the majority of institutes were not prepared for such a crisis; researchers in China, Japan, and Singapore were able to resume research much quicker - for example after approximately one month in Japan - than their counterparts in the US and Europe after the first lockdowns; researchers adapted to using virtual teleconferencing to maintain contact with colleagues; and doctoral students were the hardest hit by the pandemic with deep concerns about completing their research and career prospects. We hope that the analysis from this survey will enable the global materials science community to learn from each other's experiences and move forward from the unprecedented circumstances created by the pandemic.

Controllability of cupric particle synthesis by linear alcohol chain number as additive and pH control in cupric acetate solution using X-ray radiolysis.

Synthesis and immobilization of caltrop cupric particles onto a Si substrate using X-ray radiolysis directly from a liquid solution of Cu(COOCH3)2 is demonstrated. Caltrop cupric oxide particles are formed in the X-ray radiolysis of aqueous solutions of Cu(COOCH3)2, which also contain methanol, ethanol, 2-propanol or 1-propanol as ^\bulletOH scavenger. The blade lengths of the caltrop particles are dependent on the alcohol chain length. In particular, it was found that an alkyl alcohol whose chain length is longer than four is unable to synthesize any particles in aqueous solutions of Cu(COOCH3)2 in X-ray radiolysis. These results are attributed to the alkyl alcohol chain length influencing the rate of reaction of radicals and determines the solvable ratio of its alcohol into water. In addition, it was found that the synthesized particle geometric structure and composition can also be controlled by the pH of the aqueous solution in the X-ray radiolysis. This study may open a door to understanding and investigating a novel photochemical reaction route induced under X-ray irradiation. The development of the X-ray radiolysis process enables us to achieve the rapid and easy process of synthesis and immobilization of higher-order nano/microstructure consisting of various materials.

Current-induced crystallisation in Heusler alloy films for memory potentiation in neuromorphic computation.

The current information technology has been developed based on von Neumann type computation. In order to sustain the rate of development, it is essential to investigate alternative technologies. In a next-generation computation, an important feature is memory potentiation, which has been overlooked to date. In this study, potentiation functionality is demonstrated in a giant magnetoresistive (GMR) junction consisting of a half-metallic Heusler alloy which can be a candidate of an artificial synapse while still achieving a low resistance-area product for low power consumption. Here the Heusler alloy films are grown on a (110) surface to promote layer-by-layer growth to reduce their crystallisation energy, which is comparable with Joule heating induced by a controlled current introduction. The current-induced crystallisation leads to the reduction in the corresponding resistivity, which acts as memory potentiation for an artificial GMR synaptic junction.

Discrimination of skyrmion chirality via spin-orbit and -transfer torques for logic operation.

Recently many works on magnetic memories and logic circuits, which use a magnetic skyrmion have been reported. Previously we micromagnetically simulated a method to switch a chirality of a magnetic skyrmion formed in a magnetic thin film by introducing a pulsed heat spot. In this paper, we propose a method to discriminate the chirality of a skyrmion in a branched nanowire by using spin-orbit torque (SOT) and spin-transfer torque (STT), and confirm the validity of the method by using simulation. The simulated results show that the motion changes depending on the chirality when additional SOT is applied on a skyrmion moving in a branch by STT. This method can be used as a fundamental building block for electrical detection in memory and logic devices using the chirality of skyrmions as a data bit in addition to the presence (and polarity) of the skyrmions as conventionally used, which can be lead to multiple-valued operation.

Resolution of non-destructive imaging by controlled acceleration voltage in scanning electron microscopy.

A new method of non-destructive sub-surface interfacial characterisation has been developed recently, which can be useful for quality assurance of a buried interface in nanoelectronic devices, such as magnetic random access memory. Since the cell size of these devices have been reducing their sizes, it is important to evaluate the resolution of the non-destructive imaging. A sub nanometric layer of different materials such as W and Pt was grown underneath a capping layer with controlled thickness for the evaluation of their sizes in this study. This provides systematic experimental data to show that the technique is capable to resolve down to approximately 2 nm in the plane, which is sufficient for the device imaging.

Non-Destructive Imaging on Synthesised Nanoparticles.

Our recently developed non-destructive imaging technique was applied for the characterisation of nanoparticles synthesised by X-ray radiolysis and the sol-gel method. The interfacial conditions between the nanoparticles and the substrates were observed by subtracting images taken by scanning electron microscopy at controlled electron acceleration voltages to allow backscattered electrons to be generated predominantly below and above the interfaces. The interfacial adhesion was found to be dependent on the solution pH used for the particle synthesis or particle suspension preparation, proving the change in the particle formation/deposition processes with pH as anticipated and agreed with the prediction based on the Derjaguin-Landau-Verwey-Overbeek (DLVO) theory. We found that our imaging technique was useful for the characterisation of interfaces hidden by nanoparticles to reveal the formation/deposition mechanism and can be extended to the other types of interfaces.

Switching of Skyrmion chirality by local heating.

Magnetic Skyrmions are energetically stable entities formed in a ferromagnet with a diameter of typically below 100 nm and are easily displaceable using an electrical current of 102 A/cm2, resulting the Skyrmions to be more advantageous than domain walls for spintronic memory applications. Here, we demonstrated switching of a chirality of magnetic Skyrmions formed in magnetic thin films by introducing a pulsed heat spot using micromagnetic simulation. Skyrmions are found to expand with a pulsed heat spot, which induces the magnetic moments surrounding the Skyrmion to rotate by this expansion, followed by the chirality switching of the Skyrmion. Such simple controllability can be used as a fundamental building block for memory and logic devices using the chirality of Skyrmions as a data bit.

Perpendicular Magnetic Anisotropy in Heusler Alloy Films and Their Magnetoresistive Junctions.

For the sustainable development of spintronic devices, a half-metallic ferromagnetic film needs to be developed as a spin source with exhibiting 100% spin polarisation at its Fermi level at room temperature. One of the most promising candidates for such a film is a Heusler-alloy film, which has already been proven to achieve the half-metallicity in the bulk region of the film. The Heusler alloys have predominantly cubic crystalline structures with small magnetocrystalline anisotropy. In order to use these alloys in perpendicularly magnetised devices, which are advantageous over in-plane devices due to their scalability, lattice distortion is required by introducing atomic substitution and interfacial lattice mismatch. In this review, recent development in perpendicularly-magnetised Heusler-alloy films is overviewed and their magnetoresistive junctions are discussed. Especially, focus is given to binary Heusler alloys by replacing the second element in the ternary Heusler alloys with the third one, e.g., MnGa and MnGe, and to interfacially-induced anisotropy by attaching oxides and metals with different lattice constants to the Heusler alloys. These alloys can improve the performance of spintronic devices with higher recording capacity.

Chemical and structural analysis on magnetic tunnel junctions using a decelerated scanning electron beam.

Current information technology relies on the advancement of nanofabrication techniques. For instance, the latest computer memories and hard disk drive read heads are designed with a 12 nm node and 20 nm wide architectures, respectively. With matured nanofabrication processes, a yield of such nanoelectronic devices is typically up to about 90%. To date the yield has been compensated with redundant hardware and software error corrections. In the latest memories, approximately 5% redundancy and parity bits for error corrections are used, which increase the total production cost of the devices. This means the yield directly affects the device costs. It is hence critical to increase the yield in nanofabrication. In this paper, we have applied our recently developed method to image buried interfaces in combination with chemical analysis to evaluate magnetic tunnel junctions and have revealed their different magnetoresistance ratios caused by the presence of materials formed at the junction edges. The formation of these materials can be avoided by optimising the junction patterning process to remove residual carbon introduced from resist. Our imaging method with chemical analysis have demonstrated a significant potential for the improvement of junction performance, resulting in higher yields. This can be used as a quality assurance tool in a nanoelectronic device production line.

Magneto-optical detection of spin accumulation under the influence of mechanical rotation.

The generation of spin-polarised carriers in a non-magnetic material holds the key to realise highly efficient spintronic devices. Recently, it has been shown that the large spin-orbit coupling can generate spin-polarised currents in noble metals such as tungsten and platinum. Especially, if small samples of such metals are rotated on a plane disc in the presence of a perpendicular magnetic field, the orbital angular momentum is altered leading to a segregation of spin up and spin down electrons, i.e., a spin current in the samples. This is manifested via an induced magnetic moment on the metal. In this letter, magneto-optical Kerr effect (MOKE) is used to detect induced magnetic moments which allows remote measurements on metal samples rotating at 100~210 Hz. Our results confirm the mechanical generation of spin-polarised currents via optical detection of spin accumulation.

Fabrication of Epitaxial Fe3O4 Film on a Si(111) Substrate.

The application of magnetic oxides in spintronics has recently attracted much attention. The epitaxial growth of magnetic oxide on Si could be the first step of new functional spintronics devices with semiconductors. However, epitaxial spinel ferrite films are generally grown on oxide substrates, not on semiconductors. To combine oxide spintronics and semiconductor technology, we fabricated Fe3O4 films through epitaxial growth on a Si(111) substrate by inserting a γ-Al2O3 buffer layer. Both of γ-Al2O3 and Fe3O4 layer grew epitaxially on Si and the films exhibited the magnetic and electronic properties as same as bulk. Furthermore, we also found the buffer layer dependence of crystal structure of Fe3O4 by X-ray diffraction and high-resolution transmission electron microscope. The Fe3O4 films on an amorphous-Al2O3 buffer layer grown at room temperature grew uniaxially in the (111) orientation and had a textured structure in the plane. When Fe3O4 was deposited on Si(111) directly, the poly-crystal Fe3O4 films were obtained due to SiOx on Si substrate. The epitaxial Fe3O4 layer on Si substrates enable us the integration of highly functional spintoronic devices with Si technology.

Highly Efficient Spin-Current Operation in a Cu Nano-Ring.

An all-metal lateral spin-valve structure has been fabricated with a medial Copper nano-ring to split the diffusive spin-current path. We have demonstrated significant modulation of the non-local signal by the application of a magnetic field gradient across the nano-ring, which is up to 30% more efficient than the conventional Hanle configuration at room temperature. This was achieved by passing a dc current through a current-carrying bar to provide a locally induced Ampère field. We have shown that in this manner a lateral spin-valve gains an additional functionality in the form of three-terminal gate operation for future spintronic logic.

Non-destructive imaging of buried electronic interfaces using a decelerated scanning electron beam.

Recent progress in nanotechnology enables the production of atomically abrupt interfaces in multilayered junctions, allowing for an increase in the number of transistors in a processor. However, uniform electron transport has not yet been achieved across the entire interfacial area in junctions due to the existence of local defects, causing local heating and reduction in transport efficiency. To date, junction uniformity has been predominantly assessed by cross-sectional transmission electron microscopy, which requires slicing and milling processes that can potentially introduce additional damage and deformation. It is therefore essential to develop an alternative non-destructive method. Here we show a non-destructive technique using scanning electron microscopy to map buried junction properties. By controlling the electron-beam energy, we demonstrate the contrast imaging of local junction resistances at a controlled depth. This technique can be applied to any buried junctions, from conventional semiconductor and metal devices to organic devices.

Controlling the half-metallicity of Heusler/Si(1 1 1) interfaces by a monolayer of Si-Co-Si.

By using first-principles calculations we show that the spin-polarization reverses its sign at atomically abrupt interfaces between the half-metallic Co2(Fe,Mn)(Al,Si) and Si(1 1 1). This unfavourable spin-electronic configuration at the Fermi-level can be completely removed by introducing a Si-Co-Si monolayer at the interface. In addition, this interfacial monolayer shifts the Fermi-level from the valence band edge close to the conduction band edge of Si. We show that such a layer is energetically favourable to exist at the interface. This was further confirmed by direct observations of CoSi2 nano-islands at the interface, by employing atomic resolution scanning transmission electron microscopy.

Realisation of magnetically and atomically abrupt half-metal/semiconductor interface: Co2FeSi0.5Al0.5/Ge(111).

Halfmetal-semiconductor interfaces are crucial for hybrid spintronic devices. Atomically sharp interfaces with high spin polarisation are required for efficient spin injection. In this work we show that thin film of half-metallic full Heusler alloy Co2FeSi0.5Al0.5 with uniform thickness and B2 ordering can form structurally abrupt interface with Ge(111). Atomic resolution energy dispersive X-ray spectroscopy reveals that there is a small outdiffusion of Ge into specific atomic planes of the Co2FeSi0.5Al0.5 film, limited to a very narrow 1 nm interface region. First-principles calculations show that this selective outdiffusion along the Fe-Si/Al atomic planes does not change the magnetic moment of the film up to the very interface. Polarized neutron reflectivity, x-ray reflectivity and aberration-corrected electron microscopy confirm that this interface is both magnetically and structurally abrupt. Finally, using first-principles calculations we show that this experimentally realised interface structure, terminated by Co-Ge bonds, preserves the high spin polarization at the Co2FeSi0.5Al0.5/Ge interface, hence can be used as a model to study spin injection from half-metals into semiconductors.

The Effect of Cobalt-Sublattice Disorder on Spin Polarisation in Co2FexMn1-xSi Heusler Alloys.

In this work we present a theoretical study of the effect of disorder on spin polarisation at the Fermi level, and the disorder formation energies for Co2FexMn1-xSi (CFMS) alloys. The electronic calculations are based on density functional theory with a Hubbard U term. Chemical disorders studied consist of swapping Co with Fe/Mn and Co with Si; in all cases we found these are detrimental for spin polarisation, i.e., the spin polarisation not only decreases in magnitude, but also can change sign depending on the particular disorder. Formation energy calculation shows that Co-Si disorder has higher energies of formation in CFMS compared to Co2MnSi and Co2FeSi, with maximum values occurring for x in the range 0.5-0.75. Cross-sectional structural studies of reference Co2MnSi, Co2Fe0.5Mn0.5Si, and Co2FeSi by Z-contrast scanning transmission electron microscopy are in qualitative agreement with total energy calculations of the disordered structures.

Growth and characterization of thin Cu-phthalocyanine films on MgO(001) layer for organic light-emitting diodes.

Surface morphology and thermal stability of Cu-phthalocyanine (CuPc) films grown on an epitaxially grown MgO(001) layer were investigated by using atomic force microscope and X-ray diffractometer. The (002) textured ß phase of CuPc films were prepared at room temperature beyond the epitaxial MgO/Fe/MgO(001) buffer layer by the vacuum deposition technique. The CuPc structure remained stable even after post-annealing at 350°C for 1 h under vacuum, which is an important advantage of device fabrication. In order to improve the device performance, we investigated also current-voltage-luminescence characteristics for the new top-emitting organic light-emitting diodes with different thicknesses of CuPc layer.

A silicon metal-oxide-semiconductor field-effect transistor Hall bar for scanning Hall probe microscopy.

We demonstrate successful operation of a scanning Hall probe microscope with a few micron-size resolution by using a silicon metal-oxide semiconductor field-effect transistor (Si-MOSFET) Hall bar, which is designed to improve not only the mechanical strength but also the temperature stability. The Si-MOSFET micro-Hall probe is cheaper than the current micro-Hall probes and is found to be as sensitive as a micro-Hall probe with GaAs/AlGaAs heterostructure or an epitaxial InSb two-dimensional electron gas. This was used to magnetically image the surface of a Sm(2)Co(17) permanent magnet during the magnetization reversal process as a function of an external magnetic field below 1.5 T. This revealed firm evidence of the presence of the inverse magnetic seed as theoretically predicted earlier. Magnetically pinned centers, with a typical size 80 mum, are observed to persist even under a high magnetic field, clearly indicating the robustness of the Si Hall probe against the field application as well as the repetition of the measurement.