A 4H-SiC CMOS Oscillator-Based Temperature Sensor Operating from 298 K up to 573 K.

In this paper, we propose a temperature sensor based on a 4H-SiC CMOS oscillator circuit and that is able to operate in the temperature range between 298 K and 573 K. The circuit is developed on Fraunhofer IISB's 2 µm 4H-SiC CMOS technology and is designed for a bias voltage of 20 V and an oscillation frequency of 90 kHz at room temperature. The possibility to relate the absolute temperature with the oscillation frequency is due to the temperature dependency of the threshold voltage and of the channel mobility of the transistors. An analytical model of the frequency-temperature dependency has been developed and is used as a starting point for the design of the circuit. Once the circuit has been designed, numerical simulations are performed with the Verilog-A BSIM4SiC model, which has been opportunely tuned on Fraunhofer IISB's 2 µm 4H-SiC CMOS technology, and their results showed almost linear frequency-temperature characteristics with a coefficient of determination that was higher than 0.9681 for all of the bias conditions, whose maximum is 0.9992 at a VDD = 12.5 V. Moreover, we considered the effects of the fabrication process through a Monte Carlo analysis, where we varied the threshold voltage and the channel mobility with different values of the Gaussian distribution variance. For example, at VDD = 20 V, a deviation of 17.4% from the nominal characteristic is obtained for a Gaussian distribution variance of 20%. Finally, we applied the one-point calibration procedure, and temperature errors of +8.8 K and -5.8 K were observed at VDD = 15 V.

Advancing the sensitivity of integrated epoxy-based Bragg grating refractometry by high-index nanolayers.

In this Letter, we report on significantly improved surrounding RI sensitivity of epoxy polymer waveguide Bragg grating sensors. Uniform Bragg gratings were generated inside flat rectangular epoxy waveguides near the cutoff regime using standard phase mask excimer laser writing. Thickness controlled nanolayers of high-index titanium dioxide were deposited homogeneously on the waveguide sensor's surface area by repeated reactive sputter processing. Maximum Bragg wavelength shifts as high as 74.22 nm, as well as maximum sensitivities around 523 nm/RI unit corresponding to a minimum RI resolution of 1.9⋅10-6, could be obtained by employing a ∼75nm thick titanium dioxide coating.

Waveguide Bragg Gratings in Ormocer®s for Temperature Sensing.

Embedded channel waveguide Bragg gratings are fabricated in the Ormocer® hybrid polymers OrmoComp®, OrmoCore, and OrmoClad by employing a single writing step technique based on phase mask technology and KrF excimer laser irradiation. All waveguide Bragg gratings exhibit well-defined reflection peaks within the telecom wavelengths range with peak heights of up to 35 dB and -3 dB-bandwidths of down to 95 pm. Furthermore, the dependency of the fabricated embedded channel waveguide Bragg gratings on changes of the temperature and relative humidity are investigated. Here, we found that the Bragg grating in OrmoComp® is significantly influenced by humidity variations, while the Bragg gratings in OrmoCore and OrmoClad exhibit linear and considerably high temperature sensitivities of up to -250 pm/ ∘ C and a linear dependency on the relative humidity in the range of -9 pm/%.

Waveguide Bragg gratings in Ormocer hybrid polymers.

We report on the fabrication of Bragg gratings within rib-type waveguides of previously UV-cured inorganic-organic Ormocer hybrid polymers by applying the interferometric phase mask technique in conjunction with deep-UV laser radiation. The fabrication process as well as the influence of the applied laser fluence and the length of the Bragg grating on the characteristics of the Bragg grating's transmission and reflection spectra are discussed and compared to numerical simulations and calculations. Depending on the applied laser fluence and the chosen grating length, waveguide Bragg gratings with strong reflectivities of up to 98 % and narrow bandwidths of down to 120 pm have been achieved.

Seasonal Solar Thermal Absorption Energy Storage Development.

This article describes a thermochemical seasonal storage with emphasis on the development of a reaction zone for an absorption/desorption unit. The heat and mass exchanges are modelled and the design of a suitable reaction zone is explained. A tube bundle concept is retained for the heat and mass exchangers and the units are manufactured and commissioned. Furthermore, experimental results of both absorption and desorption processes are presented and the exchanged power is compared to the results of the simulations.

Correlating Optical Microspectroscopy with 4×4 Transfer Matrix Modeling for Characterizing Birefringent Van der Waals Materials.

Van der Waals materials exhibit intriguing properties for future electronic and optoelectronic devices. As those unique features strongly depend on the materials' thickness, it has to be accessed precisely for tailoring the performance of a specific device. In this study, a nondestructive and technologically easily implementable approach for accurate thickness determination of birefringent layered materials is introduced by combining optical reflectance measurements with a modular model comprising a 4×4 transfer matrix method and the optical components relevant to light microspectroscopy. This approach is demonstrated being reliable and precise for thickness determination of anisotropic materials like highly oriented pyrolytic graphite and black phosphorus in a range from atomic layers up to more than 100 nm. As a key feature, the method is well-suited even for encapsulated layers outperforming state of-the-art techniques like atomic force microscopy.

Mechanisms of Ohmic Contact Formation of Ti/Al-Based Metal Stacks on p-Doped 4H-SiC.

Ohmic contacts on p-doped 4H-SiC are essential for the fabrication of a wide range of power electron devices. Despite the fact that Ti/Al based ohmic contacts are routinely used for ohmic contacts on p-doped 4H-SiC, the underlying contact formation mechanisms are still not fully understood. TLM structures were fabricated, measured and analyzed to get a better understanding of the formation mechanism. SIMS analyses at the Ti3SiC2-SiC interface have shown a significant increase of the surface near Al concentration. By using numerical simulation it is shown that this additional surface near Al concentration is essential for the ohmic contact formation.

Highly accurate determination of heterogeneously stacked Van-der-Waals materials by optical microspectroscopy.

The composition of Van-der-Waals heterostructures is conclusively determined using a hybrid evaluation scheme of data acquired by optical microspectroscopy. This scheme deploys a parameter set comprising both change in reflectance and wavelength shift of distinct extreme values in reflectance spectra. Furthermore, the method is supported by an accurate analytical model describing reflectance of multilayer systems acquired by optical microspectroscopy. This approach allows uniquely for discrimination of 2D materials like graphene and hexagonal boron nitride (hBN) and, thus, quantitative analysis of Van-der-Waals heterostructures containing structurally very similar materials. The physical model features a transfer-matrix method which allows for flexible, modular description of complex optical systems and may easily be extended to individual setups. It accounts for numerical apertures of applied objective lenses and a glass fiber which guides the light into the spectrometer by two individual weighting functions. The scheme is proven by highly accurate quantification of the number of layers of graphene and hBN in Van-der-Waals heterostructures. In this exemplary case, the fingerprint of graphene involves distinct deviations of reflectance accompanied by additional wavelength shifts of extreme values. In contrast to graphene, the fingerprint of hBN reveals a negligible deviation in absolute reflectance causing this material being only detectable by spectral shifts of extreme values.

Laser Surface Microstructuring of a Bio-Resorbable Polymer to Anchor Stem Cells, Control Adipocyte Morphology, and Promote Osteogenesis.

New strategies in regenerative medicine include the implantation of stem cells cultured in bio-resorbable polymeric scaffolds to restore the tissue function and be absorbed by the body after wound healing. This requires the development of appropriate micro-technologies for manufacturing of functional scaffolds with controlled surface properties to induce a specific cell behavior. The present report focuses on the effect of substrate topography on the behavior of human mesenchymal stem cells (MSCs) before and after co-differentiation into adipocytes and osteoblasts. Picosecond laser micromachining technology (PLM) was applied on poly (L-lactide) (PLLA), to generate different microstructures (microgrooves and microcavities) for investigating cell shape, orientation, and MSCs co-differentiation. Under certain surface topographical conditions, MSCs modify their shape to anchor at specific groove locations. Upon MSCs differentiation, adipocytes respond to changes in substrate height and depth by adapting the intracellular distribution of their lipid vacuoles to the imposed physical constraints. In addition, topography alone seems to produce a modest, but significant, increase of stem cell differentiation to osteoblasts. These findings show that PLM can be applied as a high-efficient technology to directly and precisely manufacture 3D microstructures that guide cell shape, control adipocyte morphology, and induce osteogenesis without the need of specific biochemical functionalization.

Topic Review: Application of Raman Spectroscopy Characterization in Micro/Nano-Machining.

The defects and subsurface damages induced by crystal growth and micro/nano-machining have a significant impact on the functional performance of machined products. Raman spectroscopy is an efficient, powerful, and non-destructive testing method to characterize these defects and subsurface damages. This paper aims to review the fundamentals and applications of Raman spectroscopy on the characterization of defects and subsurface damages in micro/nano-machining. Firstly, the principle and several critical parameters (such as penetration depth, laser spot size, and so on) involved in the Raman characterization are introduced. Then, the mechanism of Raman spectroscopy for detection of defects and subsurface damages is discussed. The Raman spectroscopy characterization of semiconductor materials' stacking faults, phase transformation, and residual stress in micro/nano-machining is discussed in detail. Identification and characterization of phase transformation and stacking faults for Si and SiC is feasible using the information of new Raman bands. Based on the Raman band position shift and Raman intensity ratio, Raman spectroscopy can be used to quantitatively calculate the residual stress and the thickness of the subsurface damage layer of semiconductor materials. The Tip-Enhanced Raman Spectroscopy (TERS) technique is helpful to dramatically enhance the Raman scattering signal at weak damages and it is considered as a promising research field.

Nano- and Micro-Patterned S-, H-, and X-PDMS for Cell-Based Applications: Comparison of Wettability, Roughness, and Cell-Derived Parameters.

Polydimethylsiloxane (PDMS) is a promising biomaterial for generating artificial extracellular matrix (ECM) like patterned topographies, yet its hydrophobic nature limits its applicability to cell-based approaches. Although plasma treatment can enhance the wettability of PDMS, the surface is known to recover its hydrophobicity within a few hours after exposure to air. To investigate the capability of a novel PDMS-type (X-PDMS) for in vitro based assessment of physiological cell properties, we designed and fabricated plane as well as nano- and micrometer-scaled pillar-patterned growth substrates using the elastomer types S-, H- and X-PDMS, which were fabricated from commercially available components. Most importantly, we compared X-PDMS based growth substrates which have not yet been investigated in this context with H- as well as well-known S-PDMS based substrates. Due to its applicability to fabricating nanometer-sized topographic features with high accuracy and pattern fidelity, this material may be of high relevance for specific biomedical applications. To assess their applicability to cell-based approaches, we characterized the generated surfaces using water contact angle (WCA) measurement and atomic force microscopy (AFM) as indicators of wettability and roughness, respectively. We further assessed cell number, cell area and cellular elongation as indirect measures of cellular viability and adhesion by image cytometry and phenotypic profiling, respectively, using Calcein and Hoechst 33342 stained human foreskin fibroblasts as a model system. We show for the first time that different PDMS types are differently sensitive to plasma treatment. We further demonstrate that surface hydrophobicity changes along with changing height of the pillar-structures. Our data indicate that plane and structured X-PDMS shows cytocompatibility and adhesive properties comparable to the previously described elastomer types S- and H-PDMS. We conclude that nanometer-sized structuring of X-PDMS may serve as a powerful method for altering surface properties toward production of biomedical devices for cell-based applications.

Tailoring the Electrical Properties of HfO2 MOS-Devices by Aluminum Doping.

In this work dielectric and electrical properties of Al-doped HfO2 layers deposited by plasma-enhanced atomic layer deposition in dependence on the thickness and the added Al amount in the films have been investigated. Special attention is dedicated to C-V and I-V hysteresis analysis as a measure for trapping phenomena in the films. A detailed study of conduction mechanisms in dependence on the composition of the layers has also been performed. The densities and spatial and energy positions of traps have been examined. It is found that only a small amount of Al-doping decreases the trapping which is assigned to a reduction of oxygen vacancy-related traps in HfO2. On the contrary, higher amounts of Al introduced in HfO2 films increase the trapping ability of the stacks which is due to the introduction of deeper Al2O3-related traps. The results imply that by adding a proper amount of Al into HfO2 it is possible to tailor dielectric and electrical properties of high-k layers toward meeting the criteria for particular applications.

Junction formation and current transport mechanisms in hybrid n-Si/PEDOT:PSS solar cells.

We investigated hybrid inorganic-organic solar cells combining monocrystalline n-type silicon (n-Si) and a highly conductive polymer poly(3,4-ethylenedioxythiophene)-poly(styrene sulfonate) ( PEDOT: PSS). The build-in potential, photo- and dark saturation current at this hybrid interface are monitored for varying n-Si doping concentrations. We corroborate that a high build-in potential forms at the hybrid junction leading to strong inversion of the n-Si surface. By extracting work function and valence band edge of the polymer from ultraviolet photoelectron spectroscopy, a band diagram of the hybrid n-Si/ PEDOT: PSS heterojunction is presented. The current-voltage characteristics were analyzed using Schottky and abrupt pn-junction models. The magnitude as well as the dependence of dark saturation current on n-Si doping concentration proves that the transport is governed by diffusion of minority charge carriers in the n-Si and not by thermionic emission of majorities over a Schottky barrier. This leads to a comprehensive explanation of the high observed open-circuit voltages of up to 634 mV connected to high conversion efficiency of almost 14%, even for simple planar device structures without antireflection coating or optimized contacts. The presented work clearly shows that PEDOT: PSS forms a hybrid heterojunction with n-Si behaving similar to a conventional pn-junction and not, like commonly assumed, a Schottky junction.

Nanoscale characterization of TiO(2) films grown by atomic layer deposition on RuO(2) electrodes.

Topography and leakage current maps of TiO2 films grown by atomic layer deposition on RuO2 electrodes using either a TiCl4 or a Ti(O-i-C3H7)4 precursor were characterized at nanoscale by conductive atomic force microscopy (CAFM). For both films, the leakage current flows mainly through elevated grains and not along grain boundaries. The overall CAFM leakage current is larger and more localized for the TiCl4-based films (0.63 nm capacitance equivalent oxide thickness, CET) compared to the Ti(O-i-C3H7)4-based films (0.68 nm CET). Both films have a physical thickness of ∼20 nm. The nanoscale leakage currents are consistent with macroscopic leakage currents from capacitor structures and are correlated with grain characteristics observed by topography maps and transmission electron microscopy as well as with X-ray diffraction.