A silicon diode-based optoelectronic interface for bidirectional neural modulation.

The development of advanced neural modulation techniques is crucial to neuroscience research and neuroengineering applications. Recently, optical-based, nongenetic modulation approaches have been actively investigated to remotely interrogate the nervous system with high precision. Here, we show that a thin-film, silicon (Si)-based diode device is capable to bidirectionally regulate in vitro and in vivo neural activities upon adjusted illumination. When exposed to high-power and short-pulsed light, the Si diode generates photothermal effects, evoking neuron depolarization and enhancing intracellular calcium dynamics. Conversely, low-power and long-pulsed light on the Si diode hyperpolarizes neurons and reduces calcium activities. Furthermore, the Si diode film mounted on the brain of living mice can activate or suppress cortical activities under varied irradiation conditions. The presented material and device strategies reveal an innovated optoelectronic interface for precise neural modulations.

On the evaluation of edgeless diode detectors for patient-specific QA in high-dose stereotactic radiosurgery.

PURPOSE: In this work, the potential of an innovative "edgeless" silicon diode was evaluated as a response to the still unmet need of a reliable tool for plan dosimetry verification of very high dose, non-coplanar, patient-specific radiosurgery treatments. In order to prove the effectiveness of the proposed technology, we focused on radiosurgical treatments for functional disease like tremor or pain. METHODS: The edgeless diodes response has been validated with respect to clinical practice standard detectors by reproducing the reference dosimetry data adopted for the Treatment Planning System. In order to evaluate the potential for radiosurgery patient-specific treatment plan verification, the anthropomorphic phantom Alderson RANDO has been adopted along with three edgeless sensors, one placed in the centre of the Planning Target Volume, one superiorly and one inferiorly. RESULTS: The reference dosimetry data obtained from the edgeless detectors are within 2.6% for output factor, off-axis ratio and well within 2% for tissue phantom ratio when compared to PTW 60,018 diode. The edgeless detectors measure a dose discrepancy of approximately 3.6% from the mean value calculated by the TPS. Larger discrepancies are obtained in very steep gradient dose regions when the sensors are placed outside the PTV. CONCLUSIONS: The angular independent edgeless diode is proposed as an innovative dosimeter for patient quality assurance of brain functional disorders and other radiosurgery treatments. The comparison of the diode measurements with TPS calculations confirms that edgeless diodes are suitable candidates for patient-specific dosimetric verification in very high dose ranges delivered by non-isocentric stereotactic radiosurgery modalities.

Development of a real-time neutron beam detector for boron neutron capture therapy using a thin silicon sensor.

We have developed a new real-time neutron detector, which is able to measure a direct neutron beam of boron neutron capture therapy. The detector consists of both a 40-µm-thick pn diode and around 0.09-µm-thick LiF neutron converter. Experimental results indicate that this neutron detector can measure neutron flux up to 1 × 109 (cm-2 s-1), separately from gamma rays around 500 mGy/h. The measured depth distribution of neutron flux in an acrylic block is in agreement with the activation results of gold.

Multi-site evaluation of the Razor stereotactic diode for CyberKnife small field relative dosimetry.

PURPOSE: The aims of this study were: (i) to validate in a multi-site context the suitability of the IBA Razor silicon diode detector for CyberKnife relative dosimetry. (ii) to fit the multi-center experimental data into a function relating the field output factors to the effective field size (EFS). METHODS AND MATERIALS: Ratio of detector readings in clinical and reference field (OFdet) and beam profiles were acquired on five CyberKnife units for fixed collimator diameters (range 5-60 mm), using both Razor and PTW 60017 diodes. Measured OFdet were corrected using published MonteCarlo correction factors to get field output factors ΩQclin,Qmsrfclin,fmsr. Profiles were analyzed in terms of penumbra and EFS. ΩQclin,Qmsrfclin,fmsr obtained in four centers were fitted as a function of EFS, while the data of the 5th center were used to validate the fitting curve. RESULTS: Differences between Razor and PTW60017 ΩQclin,Qmsrfclin,fmsr were within 1.5% over all centers down to 7.5 mm aperture and within 3.5% for the 5 mm diameter. The fit showed a coefficient of determination R2 = 0.997. The mean deviation of measured points from the predictive curve was within 0.5%. Data of the 5th center showed a mean deviation of 0.4% from the curve, with maximum differences within 2.5% for the 7.5 mm aperture. CONCLUSIONS: The results confirmed the suitability of Razor detector for CyberKnife dosimetry by comparison to the PTW 60017 diode which has been well characterized and is in widespread use. The proposed mathematical relation between ΩQclin,Qmsrfclin,fmsr and EFS is a robust predictive model applicable to different CyberKnife systems and detectors.

Technical Note: Characterization of the new microSilicon diode detector.

PURPOSE: Dosimetric properties of the new microSilicon diode detector (60023) have been studied with focus on application in small-field dosimetry. The influences of the dimensions of the sensitive volume and the density of the epoxy layer surrounding the silicon chip of microSilicon have been quantified and compared to its predecessor (Diode E 60017) and the microDiamond (60019, all PTW-Freiburg, Germany). METHODS: Dose linearity has been studied in the range from 0.01 to 8.55 Gy and dose-per-pulse dependence from 0.13 to 0.86 mGy/pulse. The effective point of measurement (EPOM) was determined by comparing measured percentage depth dose curves with a reference curve (Roos chamber). Output ratios were measured for nominal field sizes from 0.5 × 0.5  cm2 to 4 × 4 cm2 . The corresponding small-field output correction factors, k, were derived with a plastic scintillation detector as reference. The lateral dose-response function, K(x), was determined using a slit beam geometry. RESULTS: MicroSilicon shows linear dose response (R2  = 1.000) in both low and high dose range up to 8.55 Gy with deviations of only up to 1% within the dose-per-pulse values investigated. The EPOM was found to lie (0.7 ± 0.2) mm below the front detector's surface. The derived k for microSilicon (0.960 at seff  = 0.55 cm) is similar to that of microDiamond (0.956), while Diode E requires larger corrections (0.929). This improved behavior of microSilicon in small-fields is reflected in the slightly wider K(x) compared to Diode E. Furthermore, the amplitude of the negative values in K(x) at the borders of the sensitive volume has been reduced. CONCLUSIONS: Compared to its predecessor, microSilicon shows improved dosimetric behavior with higher sensitivity and smaller dose-per-pulse dependence. Profile measurements demonstrated that microSilicon causes less perturbation in off-axis measurements. It is especially suitable for the applications in small-field output factors and profile measurements.

2D monolithic silicon-diode array detectors in megavoltage photon beams: does the fabrication technology matter? A medical physicist's perspective.

A family of prototype 2D monolithic silicon-diode array detectors (MP512, Duo, Octa) has been proposed by the Centre for Medical Radiation Physics, University of Wollongong (Australia) for relative dosimetry in small megavoltage photon beams. These detectors, which differ in the topology of their 512 sensitive volumes, were originally fabricated on bulk p-type substrates. More recently, they have also been fabricated on epitaxial p-type substrates. In the literature, their performance has been individually characterized for quality assurance (QA) applications. The present study directly assessed and compared that of a MP512-bulk and that of a MP512-epitaxial in terms of radiation hardness, long-term stability, response linearity with dose, dose per pulse and angular dependence. Their measurements of output factors, off-axis ratios and percentage depth doses in square radiation fields collimated by the jaws and produced by 6 MV and 10 MV flattened photon beams were then benchmarked against those by commercially available detectors. The present investigation was aimed at establishing, from a medical physicist's perspective, how the bulk and epitaxial fabrication technologies would affect the implementation of the MP512s into a QA protocol. Based on results, the MP512-epitaxial would offer superior radiation hardness, long-term stability and achievable uniformity and reproducibility of the response across the 2D active area.

Community approach for reducing small field measurement errors: Experience over 24 centres.

PURPOSE: The complexity of the modern Stereotactic Body Radiation Therapy (SBRT) techniques requires comprehensive quality assurance programs, to ensure the right treatment to the patient. Dosimetry of small radiation fields is a challenge especially for radiotherapy centres starting to work on this issue. The matter to be discussed here concerns the need of detailed measurement procedures and cross checks to be paired to the usual recommendations on detectors and correction factors. MATERIALS AND METHODS: The presented work involved 24 Italian radiotherapy centres, with the specific purpose to minimize systematic errors in output factor measurements over different radiotherapy centres. Using the unshielded silicon diode IBA Razor, reference curves for the relative signal ratio (RSR) as a function of beam size were created for each Linac family. RESULTS: With this study we have demonstrated consistency of small field dosimetry on all the centres involved, moreover all radiotherapy centres using Razor are allowed to compare measurements amongst each other and centres with values deviating more than 5% from the reference curve are advised to repeat their measurements. With this procedure, some critical issues were detected from two centres in RSR measurements, that, if implemented into the own treatment planning system, would induce an unwanted overdosage larger than 5%. CONCLUSIONS: The proposed approach could allow one to envision high-skilled therapy centres providing support to those featuring minor experience and could represent an important strategy for the clinical implementation of emerging technologies at high quality levels. The methodology adopted exploits crowd knowledge methods which could be applied in others areas of radiation dosimetry.

[Measured X-ray Spectra and Absorbed Dose Conversion Factors in a Water Equivalent Phantom Irradiated with Diagnostic X-rays].

The diagnostic X-ray spectra in a water equivalent phantom have been measured. From these measured spectra, the absorbed dose conversion factors of water were derived. The primary X-ray spectra were also measured and the scattered X-ray spectra were calculated by subtraction. The measurements were made at the depths of 0, 5, 10, 15, and 20 cm in a 20 cm-thick phantom and at the X-ray tube voltages 60, 90, and 120 kV by using a small silicon diode detector. The radiation field size was 30×30 cm2 at the phantom surface. In the obtained spectra, the fraction of the scattered photon number is increased with the depth. The X-ray qualities of the spectra in the phantom were near the qualities of primary X-rays when the depth is 0 cm, and became near the qualities of scattered X-rays as the depth increases. The changes of the X-ray qualities due to the depth change were small; photon mean-energy changes were within 4.6 keV. The changes in the absorbed dose conversion factors were also small (within 0.68%). These conversion factors were 0.4-2.3% larger than those obtained from the effective energy of incident X-rays and only -0.3 to 0.5% larger than those obtained from the X-ray spectra calculated from the aluminum half value layer and the tube voltage of incident X-rays. This study shows experimentally that the absorbed dose in a water-like phantom can be calculated with good accuracy by using the absorbed dose conversion factor obtained from the incident X-rays.

Three-Dimensional Silicon Electronic Systems Fabricated by Compressive Buckling Process.

Recently developed approaches in deterministic assembly allow for controlled, geometric transformation of two-dimensional structures into complex, engineered three-dimensional layouts. Attractive features include applicability to wide ranging layout designs and dimensions along with the capacity to integrate planar thin film materials and device layouts. The work reported here establishes further capabilities for directly embedding high-performance electronic devices into the resultant 3D constructs based on silicon nanomembranes (Si NMs) as the active materials in custom devices or microscale components released from commercial wafer sources. Systematic experimental studies and theoretical analysis illustrate the key ideas through varied 3D architectures, from interconnected bridges and coils to extended chiral structures, each of which embed n-channel Si NM MOSFETs (nMOS), Si NM diodes, and p-channel silicon MOSFETs (pMOS). Examples in stretchable/deformable systems highlight additional features of these platforms. These strategies are immediately applicable to other wide-ranging classes of materials and device technologies that can be rendered in two-dimensional layouts, from systems for energy storage, to photovoltaics, optoelectronics, and others.

Effect of charge on the current-voltage characteristics of silicon pin structures with and without getter annealing under beta irradiation of Ni-63.

The charge model for efficiency of betavoltaics effect is proposed. It allows calculating the charge value for pin structures under irradiation of Ni-63. We approximated the current-voltage characteristics of the structures using an equivalent diode circuit with a charge on the barrier capacitance. We calculated the charge function from current-voltage characteristics for two types of silicon pin structures - with and without getter annealing. The charging on the surface of pin structure decreases the efficiency of betavoltaics effect. Value of charge for our structures is changed in the range from -50 to +15mC/cm2 and depends on the applied potential. The getter annealing allows getting the structures with a higher efficiency of betavoltaic effect, but it does not exclude the surface charging under beta irradiation from Ni-63.

Initial testing of a pixelated silicon detector prototype in proton therapy.

As technology continues to develop, external beam radiation therapy is being employed, with increased conformity, to treat smaller targets. As this occurs, the dosimetry methods and tools employed to quantify these fields for treatment also have to evolve to provide increased spatial resolution. The team at the University of Wollongong has developed a pixelated silicon detector prototype known as the dose magnifying glass (DMG) for real-time small-field metrology. This device has been tested in photon fields and IMRT. The purpose of this work was to conduct the initial performance tests with proton radiation, using beam energies and modulations typically associated with proton radiosurgery. Depth dose and lateral beam profiles were measured and compared with those collected using a PTW parallel-plate ionization chamber, a PTW proton-specific dosimetry diode, EBT3 Gafchromic film, and Monte Carlo simulations. Measurements of the depth dose profile yielded good agreement when compared with Monte Carlo, diode and ionization chamber. Bragg peak location was measured accurately by the DMG by scanning along the depth dose profile, and the relative response of the DMG at the center of modulation was within 2.5% of that for the PTW dosimetry diode for all energy and modulation combinations tested. Real-time beam profile measurements of a 5 mm 127 MeV proton beam also yielded FWHM and FW90 within ±1 channel (0.1 mm) of the Monte Carlo and EBT3 film data across all depths tested. The DMG tested here proved to be a useful device at measuring depth dose profiles in proton therapy with a stable response across the entire proton spread-out Bragg peak. In addition, the linear array of small sensitive volumes allowed for accurate point and high spatial resolution one-dimensional profile measurements of small radiation fields in real time to be completed with minimal impact from partial volume averaging.

Technical Note: Angular dependence of a 2D monolithic silicon diode array for small field dosimetry.

PURPOSE: This study aims to investigate the 2D monolithic silicon diode array size of 52 × 52 mm2 (MP512) angular response. An angular correction method has been developed that improves the accuracy of dose measurement in a small field. METHODS: The MP512 was placed at the center of a cylindrical phantom, irradiated using 6 MV and 10 MV photons and incrementing the incidence of the beam angle in 15° steps from 0° to 180°, and then in 1° steps between 85° and 95°. The MP512 response was characterized for square field sizes varying between 1 × 1 cm2 and 10 × 10 cm2 . The angular correction factor was obtained as the ratio of MP512 response to EBT3 film measured doses as a function of the incidence angle (Ɵ) and was normalized at 0° incidence angle. Beam profiles of the corrected MP512 responses were compared with the EBT3 responses to verify the effectiveness of the method adopted. RESULTS: The intrinsic angular dependence of the MP512 shows maximum relative deviation from the response normalized to 0° of 18.5 ± 0.5% and 15.5 ± 0.5% for 6 MV and 10 MV, respectively, demonstrating that the angular response is sensitive to the energy. In contrast, the variation of angular response is less affected by field size. Comparison of cross-plane profiles measured by the corrected MP512 and EBT3 shows an agreement within ±2% for all field sizes when the beams irradiated the array at 0°, 45°, 135°, and 180° angles of incidence from the normal to the detector plane. At 90° incidence, corresponding to a depth dose measurement, up to a 6% discrepancy was observed for a 1 × 1 cm2 field of 6 MV. CONCLUSION: An angular correction factor can be adopted for small field sizes. Measurements discrepancies could be encountered when irradiating with very small fields parallel to the detector plane. Using this approach, the MP512 is shown to be a suitable detector for 2D dose mapping of small field size photon beams.

On-Chip Sensing of Thermoelectric Thin Film's Merit.

Thermoelectric thin films have been widely explored for thermal-to-electrical energy conversion or solid-state cooling, because they can remove heat from integrated circuit (IC) chips or micro-electromechanical systems (MEMS) devices without involving any moving mechanical parts. In this paper, we report using silicon diode-based temperature sensors and specific thermoelectric devices to characterize the merit of thermoelectric thin films. The silicon diode temperature sensors and thermoelectric devices were fabricated using microfabrication techniques. Specifically, e-beam evaporation was used to grow the thermoelectric thin film of Sb2Te3 (100 nm thick). The Seebeck coefficient and the merit of the Sb2Te3 thin film were measured or determined. The fabrication of silicon diode temperature sensors and thermoelectric devices are compatible with the integrated circuit fabrication.

Correction of measured Gamma-Knife output factors for angular dependence of diode detectors and PinPoint ionization chamber.

Dosimetry for Gamma-Knife requires detectors with high spatial resolution and minimal angular dependence of response. Angular dependence and end effect time for p-type silicon detectors (PTW Diode P and Diode E) and PTW PinPoint ionization chamber were measured with Gamma-Knife beams. Weighted angular dependence correction factors were calculated for each detector. The Gamma-Knife output factors were corrected for angular dependence and end effect time. For Gamma-Knife beams angle range of 84°-54°. Diode P shows considerable angular dependence of 9% and 8% for the 18 mm and 14, 8, 4 mm collimator, respectively. For Diode E this dependence is about 4% for all collimators. PinPoint ionization chamber shows angular dependence of less than 3% for 18, 14 and 8 mm helmet and 10% for 4 mm collimator due to volumetric averaging effect in a small photon beam. Corrected output factors for 14 mm helmet are in very good agreement (within ±0.3%) with published data and values recommended by vendor (Elekta AB, Stockholm, Sweden). For the 8 mm collimator diodes are still in good agreement with recommended values (within ±0.6%), while PinPoint gives 3% less value. For the 4 mm helmet Diodes P and E show over-response of 2.8% and 1.8%, respectively. For PinPoint chamber output factor of 4 mm collimator is 25% lower than Elekta value which is generally not consequence of angular dependence, but of volumetric averaging effect and lack of lateral electronic equilibrium. Diodes P and E represent good choice for Gamma-Knife dosimetry.