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J Nanosci Nanotechnol ; 14(12): 9599-605, 2014 Dec.
Artículo en Inglés | MEDLINE | ID: mdl-25971105

RESUMEN

Electroless-plating Ni-B films have been evaluated for the application as the diffusion barrier and metal cap for copper integration. The effect of post plasma treatment in a hydrogen environment on the characteristics of Ni-B films such as chemical composition, surface roughness, crystallinity, and resistivity was investigated. By treating electroless-plating Ni-B films with H2 plasma, the resistance and the roughness of the films decreased. The leakage current of Ni-B bottom electrode/30-nm-thick Al2O3/Al top electrode structures improved after the H2 plasma treatment on the Ni-B films. 40 nm-thick electroless-plating Ni-B film was able to block Cu diffusion up to 350 degrees C.


Asunto(s)
Cobre/química , Electroquímica , Níquel/química , Gases em Plasma , Microscopía de Fuerza Atómica , Microscopía Electrónica de Rastreo , Microscopía Electrónica de Transmisión
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