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A Joule-class room-temperature diode-pumped solid-state laser was developed. The energy scaling of the 100 mJ 1064â nm seed pulse was realized by a series of two diode-pumped amplifiers. The gain medium consists in free combinations of Nd:YAG ceramics bonded to sapphire transparent heat sinks, to relax the thermal load induced by the 34â kW pump power. At low repetition rate, parasitic lasing was the main limitation to energy scaling. By choosing a gain module combination producing a step-like gradual doping concentration profile, mitigation of parasitic oscillations was observed, and the system delivered 2.8 J, 800 ps pulses at 2â Hz.
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Formation dynamics of laser-induced periodic surface structures (LIPSSs) on the SiC substrates were described with varying pulse numbers and pulse duration. As the number of laser pulses increases, two significant transformations become evident in the progression of structural formations. First from surface roughening with nanoparticles to LIPSS with the period that is slightly shorter than the laser wavelength. Second it turns to LIPSS with a period less than half the laser wavelength. It is found that maintaining the crystallinity is the key to changing the structures. In the cases of longer pulse width than sub-nanoseconds, no LIPSS formations are observed or LSFL does not change to HSFL because the irradiated area is poly-crystallized.
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We report the implementation of a singly resonant optical parametric oscillator using a 5%MgO:PPLN partial cylinder pumped by a sub-nanosecond microchip laser emitting 1064â nm at a repetition rate of 1â kHz. It is continuously tunable from 1410â nm up to 4330â nm by rotating the cylinder and a total energy of several microjoules is emitted with a beam quality factor M2 lower than 3.
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Rayos Láser , Óxido de Magnesio , LuzRESUMEN
We demonstrated a flat-convex unstable cavity Nd:YAG/Cr4+:YAG ceramic air-cooled microchip laser (MCL) generating a record 37.6 and 59.2 MW peak power pulses with an energy of 17.0 and 24.1 mJ and a width of 452 and 407 ps at 20 Hz by using a uniform power square and hexagon pump, respectively. For hexagon pump, the near field hexagon donut beam was changed in to a Bessel-like beam in far field, whose beam quality was estimated as 2nd moment M2 of 7.67. The brightness scale of unstable resonator MCL was achieved up to 88.9 TW/(sr·cm2) in contrast with flat-flat cavity MCL. However, the high intense center part of Bessel-like beam increased its brightness effectively more than 8 times, up to 736 TW/(sr·cm2).
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In this work we evaluated the laser-induced damage threshold of the interface between two identical YAG crystals, bonded by an inter-layer assisted surface activated bonding method. The experimental results indicate slight damage threshold degradation for both single- and polycrystalline trivalent rear-earth (RE3+)-ion-doped YAG gain media in the sub-nanosecond pulse regime. Moreover, crystal annealing prior to damage testing could provide additional improvement for the laser damage threshold of the bulk and bonded interface.
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Stress-induced polarity inversion of crystal quartz using a quasi-phase matching (QPM) stamp is proposed for a QPM frequency conversion quartz device. Fabrication of QPM structure in x-cut quartz plate could be realized using the periodically patterned QPM stamp. Also, second-harmonic 532 nm generation with 16.8 kW peak intensity was demonstrated using a QPM quartz device with QPM period of 124 µm (3rd-order QPM) to confirm its polarity-inverted structure.
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In this work, the performance of Ca5(BO3)3F (CBF) single crystals was investigated for the third harmonic generation at 355â nm. A high energy conversion efficiency of 16.9% at 355â nm was reached using a two-conversion-stage setup. First, using a high peak power, passively Q-switched Nd3+:YAG/Cr4+:YAG microlaser based gain aperture in micro-MOPA, the second harmonic at 532â nm was achieved with lithium triborate (LBO) crystal, reaching 1.35 MW peak power. On a second step, laser pulses at 355â nm were generated using a 5â mm-long CBF crystal growth by TSSG method with energy, pulse duration and peak power of 479 µJ, 568 ps and 0.843 MW, respectively. These results are currently the highest reported for CBF material.
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A doughnut mode microchip laser was demonstrated by introducing a monolithic ceramic Nd:YAG/Cr4+:YAG chip in an unstable resonator to deliver laser pulses with an energy of 13.2 mJ and a pulse width of 476 ps, corresponding to a record peak power of 27.7 MW. The laser beam quality was characterized by M2â¼6 at 10 Hz repetition rate. No significant degradation or change of beam pattern, pulse width, and M2 was confirmed during energy scaling in the case of the unstable cavity, promising for further brightness improving. In comparison with a flat-flat cavity, pulse broadening and M2 increase was observed up to â¼1.2 ns and â¼10, respectively, during energy scaling up to 18 mJ due to the beam pattern degradation. The doughnut beam was observed to have an Airy disk at the focal point, which was suitable for laser induced breakdown in air. The measured breakdown threshold of doughnut beam was comparable to a near-Gaussian beam (M2=1.3).
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An Nd:YAG Micro-MOPA, based on a microchip master oscillator and power amplifier system with gain aperture beam cleaning, could generate sub-ns 200 mJ pulses with extremely high brightness of 18 PW/sr·cm2 [Opt. Express268609 (2018)]. However, the system repetition rate was limited to 10 Hz, due to thermal problems occurring in the main amplifier rod under high-power operation. In this work, we achieved 100 Hz operation with pulse brightness of 11 PW/sr·cm2 by optical compensation of thermal lensing, which was evaluated through calculations and an experiment.
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The Distributed Face Cooling (DFC) chip was fabricated from four pieces of 1 mm-length Nd:YAG plate sandwiched in four pieces of sapphire heat spreaders through advanced surface activated bonding (SAB) at room temperature. A sub-nanosecond (665.7ps) pulsed DFC-chip tiny integrated laser was achieved with output energy of 21.5 mJ and peak power of 32.3 MW with saturable absorber Cr4+:YAG. By finite element analysis, we confirmed the advantages of heat dissipation from DFC-chip compared with conventional bulk-chip. The SAB-DFC-chip based ubiquitous high peak power tiny integrated laser was experimentally within reach for laser-armed robot.
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High brightness compact microchip-seeded MOPA system was realized. Implementing a microchip preamplifier stage acting as gain aperture element lead to excellent output beam quality with M2 = 1.4. At maximum amplification level, 235 mJ (0.4 GW) of output energy (power) was measured. Analysis of the effect of the preamplifier showed that this element increases the available beam intensity by two orders of magnitude without significant increase in system footprint. Final beam brightness was 18 PW/sr.cm2.
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The Advanced Solid State Lasers 2017 Conference (ASSL) was held from October 1 to 5, 2017. It was an extraordinary conference at the Nagoya Congress Center in Nagoya, Japan. ASSL 2017 again suggested an impressive platform where miscellaneous perceptions with a variety of approaches to optics, photonics, sensing, laser technology, laser systems, and solid state lasers were presented. This international meeting was highly selective, leading to high level contributions through one plenary conference, 17 invited presentations, 70 regular talks, and 121 posters. The present joint issue of Optics Express and Optical Materials Express features 27 articles written by ASSL 2017 authors and covering the spectrum of solid-state lasers from materials research to sources, and from design innovation to applications.
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Crystal quartz has excellent optical properties as short absorption edge and high laser-damage threshold, which are suitable for intense pulse-laser pumped wavelength conversion by artificial quasi-phase matching structures. We present on initial evaluation of second-harmonic green generation with 14.9 kW peak power using periodic laminar structured quartz, pumped by sub-nanosecond pulse with focused intensity > 100 GW/cm2.
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We first demonstrated a continuously and widely giant-pulse duration tunable laser based on a short monolithic Nd:YAG/Cr:YAG ceramic by cavity-length control in 100 Hz operation. The tuning range of pulse duration τ was from 0.5 to 9 ns as keeping peak powers of over 0.5 MW up to 6 MW. The characteristics of the ceramic laser was discussed in detail such as cavity-length dependent beam pattern and divergence, pulse shape, pulse energy due to the transverse and longitudinal modes, and an elliptical polarization status. Laser induced breakdown in laboratory air was investigated as a function of τ in sub-nanosecond region using the developed laser. Air-breakdown threshold intensity Ith was measured using three different focusing conditions. We confirmed that 1) the measured Ith was almost constant at the longer τ than τCI named as limit-pulse-duration of cascade ionization (CI), 2) Ith had ~τ-2 scaling for τ < τCI, 3) the increase of Ith is not connected to a specific intensity level, and 4) τCI was not constant and depended on focusing conditions. These phenomena were discussed with considering temporal-spatial intensity of laser.
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In this work the performance of two yttrium calcium oxyborate (YCOB) crystals made by Czochralski and Bridgman growth process was measured. By using high peak power, passively Q-switched Nd3+:YAG/Cr4+:YAG microlaser, high conversion second harmonic generation efficiency were obtained. Laser pulses at 532 nm with 1.14 mJ energy and 223 ps duration were obtained with a 15-mm long YCOB crystal that was grown by Bridgman method. The conversion efficiency was 70.2%, comparable with the conversion efficiency of 72.8% that was achieved with 10-mm long lithium triborate (LBO) nonlinear crystal. Also, for the first time, experimental data on temperature tuning in type I YCOB crystal was measured with linear slope in 200°C temperature range equal to -0.057%/°C and -0.064%/°C for the Czochralski and Bridgman grown crystals, respectively. Such YCOB nonlinear crystal can become a serious option for developing laser sources with high-peak power at high repetition rate that can operate in harsh environment.
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The editors introduce the focus issue on "Advanced Solid-State Lasers (ASSL) 2016", which is based on the topics presented at a conference of the same name held in Boston, USA, from October 30 to November 3, 2016. This focus issue, jointly prepared by Optics Express and Optical Materials Express, includes 20 contributed papers (14 for Optics Express and 6 for Optical Materials Express) selected from the voluntary submissions from attendees who presented at the conference and have extended their work into complete research articles. We hope this focus issue provides a useful link to the variety of topical discussions held at the conference and will contribute to the further expansion of the associated research areas.
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We generate narrowband terahertz (THz) radiation in periodically poled lithium niobate (PPLN) crystals using two chirped-and-delayed driver pulses from a high-energy Ti:sapphire laser. The generated frequency is determined by the phase-matching condition in the PPLN and influences the temporal delay of the two pulses for efficient terahertz generation. We achieve internal conversion efficiencies up to 0.13% as well as a record multicycle THz energy of 40 µJ at 0.544 THz in a cryogenically cooled PPLN.
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We present a giant-pulse generation laser realized by the emission cross-section control of a gain medium in a passively Q-switched Nd:YVO4 microchip laser with a Cr4+:YAG saturable absorber. Up to 1.17 MW peak power and 1.03 mJ pulse energy were obtained with a 100 Hz repetition rate. By combining the Nd:YVO4 crystal with a Sapphire plate, lower temperature difference between a pump region in the gain crystal and a crystal holder was obtained which helped to keep the cavity in stability zone at elevated temperatures and allowed the achievement of the high peak power for this laser system.
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High-gain mid-infrared optical-parametric generation was demonstrated by simple single-pass configuration using PPMgLN devices pumped by giant-pulse microchip laser. Effective mid-infrared wavelength conversion with 1 mJ output energy from 2.4 mJ pumping using conventional PPMgLN could be realized. Broadband optical-parametric generation from 1.7 to 2.6 µm could be also measured using chirped PPMgLN.
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Intense pulse pumped microlaser is proposed for high peak power and low timing jitter at high repetition rate. It is based on Intense and Fast Pulse Pump (IFPP) technique, in which fast pulse pumps up the upper-level population and then dumps it rapidly by Q-switching. That could come close to complete pumping efficiency to reduce thermal problems and contribute to suppress the timing jitter of passively Q-switched laser. In this work, linearly polarized 1064 nm beam from [100]-cut YAG/Nd3+:YAG and [110]-cut Cr4+:YAG passively Q-switched microlaser is directly guided into nonlinear crystals to obtain 532 nm and 266 nm output. By implementing IFPP concept, over 1 MW peak power, 215 ps pulse duration, 1 kHz pulses at 266 nm with reduced standard deviation timing jitter of 37 ns were obtained.