Group-III nitride heteroepitaxial films approaching bulk-class quality.

III-nitride wide bandgap semiconductors are promising materials for modern optoelectronics and electronics. Their application has progressed greatly thanks to the continuous quality improvements of heteroepitaxial films grown on large-lattice-mismatched foreign substrates. But compared with bulk single crystals, there is still tremendous room for the further improvement of the material quality. Here we show a paradigm to achieve high-quality III-nitride heteroepitaxial films by the controllable discretization and coalescence of columns. By adopting nano-patterned AlN/sapphire templates with regular hexagonal holes, discrete AlN columns coalesce with uniform out-of-plane and in-plane orientations guaranteed by sapphire nitridation pretreatment and the ordered lateral growth of cleavage facets, which efficiently suppresses the regeneration of threading dislocations during coalescence. The density of dislocation etch pits in the AlN heteroepitaxial film reaches 3.3 × 104 cm-2, close to the present available AlN bulk single crystals. This study facilitates the growth of bulk-class quality III-nitride films featuring low cost and scalability.

Highly Responsive Soft Electrothermal Actuator with High-Output Force Based on Polydimethylsiloxane (PDMS)-Coated Carbon Nanotube (CNT) Sponge.

Recently, soft actuators have been found to have great potential for various applications due to their ability to be mechanically reconfigured in response to external stimuli. However, the balance between output force and considerable strain constrains their potential for further application. In this work, a novel soft electrothermal actuator was fabricated by a polydimethylsiloxane (PDMS)-coated carbon nanotube sponge (CNTS). The results showed that CNTS was heated to 365 °C in ∼1 s when triggered by a voltage of 3.5 V. Consequently, due to the large amount of air inside, the actuator expanded in 2.9 s, lifting up to ∼50 times its weight, indicating an ultrafast response and powerful output force. In addition, even in water, the soft actuator showed quick response at a voltage of 6 V. This air-expand strategy and soft actuator design is believed to open a new horizon in the development of electronic textiles, smart soft robots, and so on.

Enhanced Hydrogen Detection Based on Mg-Doped InN Epilayer.

It is a fact that surface electron accumulation layer with sheet electron density in the magnitude of ~1013 cm−2 on InN, either as-grown or Mg-doped, makes InN an excellent candidate for sensing application. In this paper, the response of hydrogen sensors based on Mg-doped InN films (InN:Mg) grown by molecular beam epitaxy has been investigated. The sensor exhibits a resistance variation ratio of 16.8% with response/recovery times of less than 2 min under exposure to 2000 ppm H2/air at 125 °C, which is 60% higher in the magnitude of response than the one based on the as-grown InN film. Hall-effect measurement shows that the InN:Mg with suitable Mg doping level exhibits larger sheet resistance, which accords with buried p-type conduction in the InN bulk. This work shows the advantage of InN:Mg and signifies its potential for sensing application.

On the electric-field reservoir for III-nitride based deep ultraviolet light-emitting diodes.

The drift velocity for holes is strongly influenced by the electric field in the p-type hole injection layer for III-nitride based deep ultraviolet light-emitting diodes (DUV LEDs). In this work, we propose an electric-field reservoir (EFR) consisting of a p-AlxGa1-xN/p-GaN architecture to facilitate the hole injection and improve the internal quantum efficiency (IQE). The p-AlxGa1-xN layer in the EFR can well reserve the electric field that can moderately adjust the drift velocity and the kinetic energy for holes. As a result, we are able to enhance the thermionic emission for holes to cross over the p-EBL with a high Al composition provided that the composition in the p-AlxGa1-xN layer is properly optimized to avoid a complete hole depletion therein.

Direct evidence of recombination between electrons in InGaN quantum discs and holes in p-type GaN.

Intense emission from an InGaN quantum disc (QDisc) embedded in a GaN nanowire p-n junction is directly resolved by performing cathodoluminescence spectroscopy. The luminescence observed from the p-type GaN region is exclusively dominated by the emission at 380 nm, which has been usually reported as the emission from Mg induced impurity bands. Here, we confirm that the robust emission from 380 nm is actually not due to the Mg induced impurity bands, but rather due to being the recombination between electrons in the QDisc and holes in the p-type GaN. This identification helps to get a better understanding of the confused luminescence from nanowires with thin QDiscs embedded for fabricating electrically driven single photon emitters.

Lattice-Polarity-Driven Epitaxy of Hexagonal Semiconductor Nanowires.

Lattice-polarity-driven epitaxy of hexagonal semiconductor nanowires (NWs) is demonstrated on InN NWs. In-polarity InN NWs form typical hexagonal structure with pyramidal growth front, whereas N-polarity InN NWs slowly turn to the shape of hexagonal pyramid and then convert to an inverted pyramid growth, forming diagonal pyramids with flat surfaces and finally coalescence with each other. This contrary growth behavior driven by lattice-polarity is most likely due to the relatively lower growth rate of the (0001̅) plane, which results from the fact that the diffusion barriers of In and N adatoms on the (0001) plane (0.18 and 1.0 eV, respectively) are about 2-fold larger in magnitude than those on the (0001̅) plane (0.07 and 0.52 eV), as calculated by first-principles density functional theory (DFT). The formation of diagonal pyramids for the N-polarity hexagonal NWs affords a novel way to locate quantum dot in the kink position, suggesting a new recipe for the fabrication of dot-based devices.

Enhancement of optical polarization degree of AlGaN quantum wells by using staggered structure.

Staggered AlGaN quantum wells (QWs) are designed to enhance the transverse-electric (TE) polarized optical emission in deep ultraviolet (DUV) light- emitting diodes (LED). The optical polarization properties of the conventional and staggered AlGaN QWs are investigated by a theoretical model based on the k·p method as well as polarized photoluminescence (PL) measurements. Based on an analysis of the valence subbands and momentum matrix elements, it is found that AlGaN QWs with step-function-like Al content in QWs offers much stronger TE polarized emission in comparison to that from conventional AlGaN QWs. Experimental results show that the degree of the PL polarization at room temperature can be enhanced from 20.8% of conventional AlGaN QWs to 40.2% of staggered AlGaN QWs grown by MOCVD, which is in good agreement with the theoretical simulation. It suggests that polarization band engineering via staggered AlGaN QWs can be well applied in high efficiency AlGaN-based DUV LEDs.

Enhanced anisotropic effective g factors of an Al0.25Ga0.75N/GaN heterostructure based quantum point contact.

Gate-defined quantum point contacts (QPCs) were fabricated with Al0.25Ga0.75N/GaN heterostructures grown by metal-organic chemical vapor deposition (MOCVD). In the transport study of the Zeeman effect, greatly enhanced effective g factors (g*) were obtained. The in-plane g* is found to be 5.5 ± 0.6, 4.8 ± 0.4, and 4.2 ± 0.4 for the first to the third subband, respectively. Similarly, the out-of-plane g* is 8.3 ± 0.6, 6.7 ± 0.7, and 5.1 ± 0.7. Increasing g* with the population of odd-numbered spin-splitted subbands are obtained at 14 T. This portion of increase is assumed to arise from the exchange interaction in one-dimensional systems. A careful analysis shows that not only the exchange interaction but the spin-orbit interaction (SOI) in the strongly confined QPC contributes to the enhancement and anisotropy of g* in different subbands. An approach to distinguish the respective contributions from the SOI and exchange interaction is therefore proposed.

Tunable surface electron spin splitting with electric double-layer transistors based on InN.

Electrically manipulating electron spins based on Rashba spin-orbit coupling (SOC) is a key pathway for applications of spintronics and spin-based quantum computation. Two-dimensional electron systems (2DESs) offer a particularly important SOC platform, where spin polarization can be tuned with an electric field perpendicular to the 2DES. Here, by measuring the tunable circular photogalvanic effect (CPGE), we present a room-temperature electric-field-modulated spin splitting of surface electrons on InN epitaxial thin films that is a good candidate to realize spin injection. The surface band bending and resulting CPGE current are successfully modulated by ionic liquid gating within an electric double-layer transistor configuration. The clear gate voltage dependence of CPGE current indicates that the spin splitting of the surface electron accumulation layer is effectively tuned, providing a way to modulate the injected spin polarization in potential spintronic devices.

Dual-functional thermal management textiles for dynamic temperature regulation based on ultra-stretchable spiral conductive composite yarn with 500%-strain thermal stability and durability.

Next-generation personal thermal management (PTM) textiles for daily routine environments are attracting extensive attention. However, challenges remain in developing multifunctional PTM textiles that are comfortable to wear, have motion stability and environmental adaptability. Herein, a novel design for fabricating a sandwich-structure PTM textile based on an ultra-stretchable spiral conductive composite yarn (SCCY) with strain-electric stability is proposed. An SCCY composed of carbon nanotubes (CNTs)/polyvinyl pyrrolidone (PVP)/waterborne polyurethane (WPU) and a drawn textured yarn (DTY) is fabricated through a dip-twisting and shaping process. The PVP not only facilitates the interfacial bonding between CNTs and yarn, but also constructs strong hydrogen bond interactions with WPU, resulting in improved structure stability and robust electrical performance. Benefitting from the optimized spiral and composite structure, the SCCY exhibits a fast thermal response (130 °C within 8 s), long-term durability (1500 cycles), and superior thermal stability under large deformation (ΔT/T0 ≈ 8.4%, under 500%). By assembling a stretchable electrothermal fabric based on SCCYs with an elastic fabric and thermochromic layer, temperature visualization and dynamic temperature regulation are integrated into the textile. This multifunctional PTM textile not only features dual thermal regulation modes of radiant cooling and Joule heating, but also maintains flexibility, breathability, and excellent stretchability, which provides broad application prospects in next-generation wearable devices.

Super-strong CNT composite yarn with tight CNT packing via a compress-stretch process.

Carbon nanotube yarn (CNTY) with a large size and excellent mechanical properties could have wide technological influence in fields ranging from electrical devices to wearable textiles; however, inventing such CNTY has remained excessively challenging. Herein, we introduce an interesting approach to produce highly densified, robust CNT/polyvinyl alcohol composite yarn (CNT/PVA-P CY) with a large diameter and excellent comprehensive properties via a compressing and stretching method. Our method allows the PVA polymer chains to be well-dispersed into CNT intra- and inner-bundles with a controllable diameter and desirable mechanical properties. The resulting CNT/PVA-P CY exhibits an ultra-large diameter (∼140 µm), admirable mechanical properties (tensile strength of up to 1475 MPa and Young's modulus of up to 24.98 GPa), light weight (1.28 g cm-3), high electrical conductivity (792 S cm-1), outstanding flexibility, and anti-abrasive abilities. The successful obtainment of such attractive properties in yarns may provide new insights for the construction and exploitation of CNTY as a potential candidate to replace traditional carbon fibers for various applications.

Bio-Inspired Hierarchical Carbon Nanotube Yarn with Ester Bond Cross-Linkages towards High Conductivity for Multifunctional Applications.

The cross-linked hierarchical structure in biological systems provides insight into the development of innovative material structures. Specifically, the sarcoplasmic reticulum muscle is able to transmit electrical impulses in skeletal muscle due to its cross-linked hierarchical tubular cell structure. Inspired by the cross-linked tubular cell structure, we designed and built chemical cross-links between the carbon nanotubes within the carbon nanotube yarn (CNT yarn) structure by an esterification reaction. Consequently, compared with the pristine CNT yarn, its electrical conductivity dramatically enhanced 348%, from 557 S/cm to 1950 S/cm. Furthermore, when applied with three voltages, the electro-thermal temperature of esterified CNT yarn reached 261 °C, much higher than that of pristine CNT yarn (175 °C). In addition, the esterified CNT yarn exhibits a linear and stable piezo-resistive response, with a 158% enhanced gauge factor (the ratio of electrical resistance changing to strain change ~1.9). The superconductivity, flexibility, and stable sensitivity of the esterified flexible CNT yarn demonstrate its great potential in the applications of intelligent devices, smart clothing, or other advanced composites.

Sub-nanometer ultrathin epitaxy of AlGaN and its application in efficient doping.

Solving the doping asymmetry issue in wide-gap semiconductors is a key difficulty and long-standing challenge for device applications. Here, a desorption-tailoring strategy is proposed to juggle the carrier concentration and transport. Specific to the p-doping issue in Al-rich AlGaN, self-assembled p-AlGaN superlattices with an average Al composition of over 50% are prepared by adopting this approach. The hole concentration as high as 8.1 × 1018 cm-3 is thus realized at room temperature, which is attributed to the significant reduction of effective Mg activation energy to 17.5 meV through modulating the activating path, as well as the highlighted Mg surface-incorporation by an intentional interruption for desorption. More importantly, benefiting from the constant ultrathin barrier thickness of only three monolayers via this approach, vertical miniband transport of holes is verified in the p-AlGaN superlattices, greatly satisfying the demand of hole injection in device application. 280 nm deep-ultraviolet light-emitting diodes are then fabricated as a demo with the desorption-tailored Al-rich p-AlGaN superlattices, which exhibit a great improvement of the carrier injection efficiency and light extraction efficiency, thus leading to a 55.7% increase of the light output power. This study provides a solution for p-type doping of Al-rich AlGaN, and also sheds light on solving the doping asymmetry issue in general for wide-gap semiconductors.

Infrared stimulated emission with an ultralow threshold from low-dislocation-density InN films grown on a vicinal GaN substrate.

Near-infrared stimulated emission from a high-quality InN layer under optical pumping was observed with a threshold excitation power density of 0.3 and 4 kW cm-2 at T = 8 and 77 K, respectively. To achieve such a low threshold power density, vicinal GaN substrates were used to reduce the edge-component threading dislocation (ETD) density of the InN film. Cross-sectional transmission electron microscopy images reveal that the annihilation of ETDs can be divided into two steps, and the ETD density can be reduced to approximately 5 × 108 cm-2 near the surface of the 5-µm-thick film. The well-resolved phonon replica of the band-to-band emission in the photoluminescence spectra at 9 K confirm the high quality of the InN film. As a result, the feasibility of InN-based photonic structures and the underlying physics of their growth and emission properties are demonstrated.

Unidirectional Elimination of Hydrogen by a Giant Local Field Saves First- and Last-Mile Performances of Semiconductor Devices.

Hydrogen, the smallest element, easily forms bonds to host/dopant atoms in semiconductors, which strongly passivates the original electronic characteristics and deteriorates the final reliability. Here, we demonstrate a concept of unidirectional elimination of hydrogen from semiconductor wafers as well as electronic chips through a giant local electric field induced by compact chloridions. We reveal an interactive behavior of chloridions, which can rapidly approach and take hydrogen atoms away from the device surface. A universal and simple technique based on a solution-mediated three-electrode system achieves efficient hydrogen elimination from various semiconductor wafers (p-GaN, p-AlGaN, SiC, and AlInP) and also complete light emitting diodes (LEDs). The p-type conductivity and light output efficiency of H-eliminated UVC LEDs have been significantly enhanced, and the lifetime is almost doubled. Moreover, we confirm that under a one-second irradiation of UVC LEDs, bacteria and COVID-19 coronavirus can be completely killed (>99.93%). This technology will accelerate the further development of the semiconductor-based electronic industry.

Lattice Polarity Manipulation of Quasi-vdW Epitaxial GaN Films on Graphene Through Interface Atomic Configuration.

Quasi van der Waals epitaxy, a pioneering epitaxy of sp3 -hybridized semiconductor films on sp2 -hybridized 2D materials, provides a way, in principle, to achieve single-crystal epilayers with preferred atom configurations that are free of substrate. Unfortunately, this has not been experimentally confirmed in the case of the hexagonal semiconductor III-nitride epilayer until now. Here, it is reported that the epitaxy of gallium nitride (GaN) on graphene can tune the atom arrangement (lattice polarity) through manipulation of the interface atomic configuration, where GaN films with gallium and nitrogen polarity are achieved by forming CONGa(3) or COGaN(3) configurations, respectively, on artificial CO surface dangling bonds by atomic oxygen pre-irradiation on trilayer graphene. Furthermore, an aluminum nitride buffer/interlayer leads to unique metal polarity due to the formation of an AlON thin layer in a growth environment containing trace amounts of oxygen, which explains the open question of why those reported wurtzite III-nitride films on 2D materials always exhibit metal polarity. The reported atomic modulation through interface manipulation provides an effective model for hexagonal nitride semiconductor layers grown on graphene, which definitely promotes the development of novel semiconductor devices.

Enhanced wet etching of patterned GaN with ion implantation.

We present the enhanced wet etching of GaN epilayer implanted with Au+ ion. Patterned GaN with 2 microm-wide sink-like strips was achieved by using 500 keV Au+ ion implantation and KOH etching. The Dependence of etching depth on etching time for the implantation at different ion fluences was investigated. The experiment showed that the damaged GaN area could be almost etched out at high ion fluence, and the etching depth could exceed the project range of incident 500 keV Au+ ion. The etch pits could be observed at the bottom of the etched area. The -400 nm depth etching could be achieved with high fluence implantation after a long etching time, and the edge of etched area could remain clear until the etching process had passed 40 min. As-deposited SiO2 spheres were used to mask the GaN sample in implantation process to investigate the etching effect. -70 nm wave of the GaN surface was observed. The results of our experiments may suggest an approach to the fabricating of GaN devices.

Rapid Nanowelding of Carbon Coatings onto Glass Fibers by Electrothermal Shock.

With the rapid development of nanomanufacturing, scaling up of nanomaterials requires advanced manufacturing technology to composite nanomaterials with disparate materials (ceramics, metals, and polymers) to achieve hybrid properties and coupling performances for practical applications. Attempts to assemble nanomaterials onto macroscopic materials are often accompanied by the loss of exceptional nanoscale properties during the fabrication process, which is mainly due to the poor contacts between carbon nanomaterials and macroscopic bulk materials. In this work, we proposed a novel cross-scale manufacturing concept to process disparate materials in different length scales and successfully demonstrated an electrothermal shock approach to process the nanoscale material (e.g., carbon nanotubes) and macroscale (e.g., glass fiber) with good bonding and excellent mechanical property for emerging applications. The excellent performance and potentially lower cost of the electrothermal shock technology offers a continuous, ultrafast, energy-efficient, and roll-to-roll process as a promising heating solution for cross-scale manufacturing.

Single-Photon Emission from Point Defects in Aluminum Nitride Films.

Quantum technologies require robust and photostable single-photon emitters. Here, room temperature operated single-photon emissions from isolated defects in aluminum nitride (AlN) films are reported. AlN films were grown on nanopatterned sapphire substrates by metal organic chemical vapor deposition. The observed emission lines range from visible to near-infrared, with highly linear polarization characteristics. The temperature-dependent line width increase shows T3 or single-exponential behavior. First-principle calculations based on density functional theory show that point defect species, such as antisite nitrogen vacancy complex (NAlVN) and divacancy (VAlVN) complexes, are considered to be an important physical origin of observed emission lines ranging from approximately 550 to 1000 nm. The results provide a new platform for on-chip quantum sources.

Hexagonal BN-Assisted Epitaxy of Strain Released GaN Films for True Green Light-Emitting Diodes.

Epitaxial growth of III-nitrides on 2D materials enables the realization of flexible optoelectronic devices for next-generation wearable applications. Unfortunately, it is difficult to obtain high-quality III-nitride epilayers on 2D materials such as hexagonal BN (h-BN) due to different atom hybridizations. Here, the epitaxy of single-crystalline GaN films on the chemically activated h-BN/Al2O3 substrates is reported, paying attention to interface atomic configuration. It is found that chemical-activated h-BN provides B-O-N and N-O bonds, where the latter ones act as effective artificial dangling bonds for following GaN nucleation, leading to Ga-polar GaN films with a flat surface. The h-BN is also found to be effective in modifying the compressive strain in GaN film and thus improves indium incorporation during the growth of InGaN quantum wells, resulting in the achievement of pure green light-emitting diodes. This work provides an effective way for III-nitrides epitaxy on h-BN and a possible route to overcome the epitaxial bottleneck of high indium content III-nitride light-emitting devices.