Insight into the Charge Density Wave Gap from Contrast Inversion in Topographic STM Images.

Charge density waves (CDWs) are understood in great detail in one dimension, but they remain largely enigmatic in two-dimensional systems. In particular, numerous aspects of the associated energy gap and the formation mechanism are not fully understood. Two long-standing riddles are the amplitude and position of the CDW gap with respect to the Fermi level (E_{F}) and the frequent absence of CDW contrast inversion (CI) between opposite bias scanning tunneling microscopy (STM) images. Here, we find compelling evidence that these two issues are intimately related. Combining density functional theory and STM to analyze the CDW pattern and modulation amplitude in 1T-TiSe_{2}, we find that CI takes place at an unexpected negative sample bias because the CDW gap opens away from E_{F}, deep inside the valence band. This bias becomes increasingly negative as the CDW gap shifts to higher binding energy with electron doping. This study shows the importance of CI in STM images to identify periodic modulations with a CDW and to gain valuable insight into the CDW gap, whose measurement is notoriously controversial.

Local Real-Space View of the Achiral 1T-TiSe_{2} 2×2×2 Charge Density Wave.

The transition metal dichalcogenide 1T-TiSe_{2}-two-dimensional layered material undergoing a commensurate 2×2×2 charge density wave (CDW) transition with a weak periodic lattice distortion (PLD) below ≈200 K. Scanning tunneling microscopy (STM) combined with intentionally introduced interstitial Ti atoms allows us to go beyond the usual spatial resolution of STM and to intimately probe the three-dimensional character of the PLD. Furthermore, the inversion-symmetric achiral nature of the CDW in the z direction is revealed, contradicting the claimed existence of helical CDW stacking and associated chiral order. This study paves the way to a simultaneous real-space probing of both charge and structural reconstructions in CDW compounds.

Alane adsorption and dissociation on the Si(0 0 1) surface.

We used DFT to study the energetics of the decomposition of alane, AlH3, on the Si(0 0 1) surface, as the acceptor complement to PH3. Alane forms a dative bond with the raised atoms of silicon surface dimers, via the Si atom lone pair. We calculated the energies of various structures along the pathway of successive dehydrogenation events following adsorption: AlH2, AlH and Al, finding a gradual, significant decrease in energy. For each stage, we analyse the structure and bonding, and present simulated STM images of the lowest energy structures. Finally, we find that the energy of Al atoms incorporated into the surface, ejecting a Si atom, is comparable to Al adatoms. These findings show that Al incorporation is likely to be as precisely controlled as P incorporation, if slightly less easy to achieve.

Stripe and Short Range Order in the Charge Density Wave of 1T-Cu_{x}TiSe_{2}.

We study the impact of Cu intercalation on the charge density wave (CDW) in 1T-Cu_{x}TiSe_{2} by scanning tunneling microscopy and spectroscopy. Cu atoms, identified through density functional theory modeling, are found to intercalate randomly on the octahedral site in the van der Waals gap and to dope delocalized electrons near the Fermi level. While the CDW modulation period does not depend on Cu content, we observe the formation of charge stripe domains at low Cu content (x<0.02) and a breaking up of the commensurate order into 2×2 domains at higher Cu content. The latter shrink with increasing Cu concentration and tend to be phase shifted. These findings invalidate a proposed excitonic pairing as the primary CDW formation mechanism in this material.

Doping nature of native defects in 1T-TiSe2.

The transition-metal dichalcogenide 1T-TiSe2 is a quasi-two-dimensional layered material with a charge density wave (CDW) transition temperature of T(CDW) ≈ 200 K. Self-doping effects for crystals grown at different temperatures introduce structural defects, modify the temperature-dependent resistivity, and strongly perturbate the CDW phase. Here, we study the structural and doping nature of such native defects combining scanning tunneling microscopy or spectroscopy and ab initio calculations. The dominant native single atom dopants we identify in our single crystals are intercalated Ti atoms, Se vacancies, and Se substitutions by residual iodine and oxygen.

DSSC anchoring groups: a surface dependent decision.

Electrodes in dye sensitised solar cells are typically nanocrystalline anatase TiO2 with a majority (1 0 1) surface exposed. Generally the sensitising dye employs a carboxylic anchoring moiety through which it adheres to the TiO2 surface. Recent interest in exploiting the properties of differing TiO2 electrode morphologies, such as rutile nanorods exposing the (1 1 0) surface and anatase electrodes with high percentages of the (0 0 1) surface exposed, begs the question of whether this anchoring strategy is best, irrespective of the majority surface exposed. Here we address this question by presenting density functional theory calculations contrasting the binding properties of two promising anchoring groups, phosphonic acid and boronic acid, to that of carboxylic acid. Anchor-electrode interactions are studied for the prototypical anatase (1 0 1) surface, along with the anatase (0 0 1) and rutile (1 1 0) surfaces. Finally the effect of using these alternative anchoring groups to bind a typical coumarin dye (NKX-2311) to these TiO2 substrates is examined. Significant differences in the binding properties are found depending on both the anchor and surface, illustrating that the choice of anchor is necessarily dependent upon the surface exposed in the electrode. In particular the boronic acid is found to show the potential to be an excellent anchor choice for electrodes exposing the anatase (0 0 1) surface.

Quantum engineering at the silicon surface using dangling bonds.

Individual atoms and ions are now routinely manipulated using scanning tunnelling microscopes or electromagnetic traps for the creation and control of artificial quantum states. For applications such as quantum information processing, the ability to introduce multiple atomic-scale defects deterministically in a semiconductor is highly desirable. Here we use a scanning tunnelling microscope to fabricate interacting chains of dangling bond defects on the hydrogen-passivated silicon (001) surface. We image both the ground-state and the excited-state probability distributions of the resulting artificial molecular orbitals, using the scanning tunnelling microscope tip bias and tip-sample separation as gates to control which states contribute to the image. Our results demonstrate that atomically precise quantum states can be fabricated on silicon, and suggest a general model of quantum-state fabrication using other chemically passivated semiconductor surfaces where single-atom depassivation can be achieved using scanning tunnelling microscopy.

Δ Self-Consistent Field Method for Natural Anthocyanidin Dyes.

We present an application of the Δ self-consistent field (ΔSCF) method, which we have implemented and tested in the DFT code CONQUEST, on the study of excited states of natural anthocyanidin dyes. We show that ΔSCF allows relaxation of the atomic structure for systems in excited states by following gradients on the excited Born-Oppenheimer surface. We compare the vertical excitation energies of some anthocyanidins in gas-phase to results from time-dependent density functional theory (TDDFT) and experiments. To reproduce a typical dye-sensitized solar cell interface, we adsorb cyanidin on TiO2 anatase (101), focusing on the shift of the lowest excitation energy due to the adsorption. We have found that important modifications occur in the excited state geometry of the adsorbed cyanidin.

O(N) methods in electronic structure calculations.

Linear-scaling methods, or O(N) methods, have computational and memory requirements which scale linearly with the number of atoms in the system, N, in contrast to standard approaches which scale with the cube of the number of atoms. These methods, which rely on the short-ranged nature of electronic structure, will allow accurate, ab initio simulations of systems of unprecedented size. The theory behind the locality of electronic structure is described and related to physical properties of systems to be modelled, along with a survey of recent developments in real-space methods which are important for efficient use of high-performance computers. The linear-scaling methods proposed to date can be divided into seven different areas, and the applicability, efficiency and advantages of the methods proposed in these areas are then discussed. The applications of linear-scaling methods, as well as the implementations available as computer programs, are considered. Finally, the prospects for and the challenges facing linear-scaling methods are discussed.

Non-adiabatic simulations of current-related structural transformations in metallic nanodevices.

One of the less explored aspects of molecular electronics is the effect of current on the mechanical stability of the conducting molecule: charge flow can alter both the geometry and electronic properties of the device, modifying the conductance and giving rise to nonlinear conduction characteristics or conductance switching. We performed a fundamental study on the correlation between the geometry and evolving electronic structure of small Au clusters that were embedded in finite Au wires and subjected to periodic transient currents. Both the current-carrying electronic states and the local electronic structure of the model system were described away from the ground state within a time-dependent Ehrenfest formalism. Non-adiabatic molecular dynamics simulations revealed that clusters undergo structural transformations between several representative geometries that coincide with patterns in cluster charging. The shape changes were enabled by the fluctuations in cluster band filling associated with the current and assisted by current-related forces. Metastable configurations of stable clusters were linked to events of charge trapping on the cluster.

Spatially local parallel tempering for thermal-equilibrium sampling.

Parallel tempering (PT) is a set of techniques for accelerating thermal-equilibrium sampling in systems where the exploration of configuration space is hindered by energy barriers. With standard PT algorithms, the computational effort scales unfavorably with system size, so that it is difficult to apply them to large systems. We propose local PT algorithms, for which the computational effort is proportional to the number of degrees of freedom. We demonstrate the effectiveness of the new algorithms on two one-dimensional model systems, showing that results for selected observables are correctly reproduced, and that practical linear scaling is achieved. We show also that the algorithms are readily applied to systems in higher dimensions. We note the prospects for studying large extended systems, including surfaces and interfaces.

Calculations for millions of atoms with density functional theory: linear scaling shows its potential.

An overview of the CONQUEST linear scaling density functional theory (DFT) code is given, focusing particularly on the scaling behaviour on modern high-performance computing platforms. We demonstrate that essentially perfect linear scaling and weak parallel scaling (with fixed number of atoms per processor core) can be achieved, and that DFT calculations on millions of atoms are now possible.

The interaction of Cu with Bi nanolines on H-passivated Si(001): an ab initio analysis.

In spite of the known tendency for Cu to be a fast diffuser inside bulk Si, it was recently shown that it presents a clear preference for migrating towards a hydrogen terminated Si(001) surface along the dimer rows; on a surface with Bi nanolines, this will drive the Cu towards the Bi nanolines. In this paper, we present a density functional theory study of the behaviour of Cu atoms near self-assembled Bi nanolines on the hydrogen-passivated Si(001) surface, predicting that Cu will attack the nanolines and insert in the Bi-Si bonds. The migration routes from subsurface locations and surface deposition are found and the pairing tendency for Cu is examined and compared to that for Ag on Bi nanolines.

Atomic structure of misfit dislocations at InAs/GaAs(110).

Heteroepitaxy of InAs on GaAs(110) leads to the formation of subsurface misfit dislocations to relieve strain. These dislocations have been observed both with transmission electron microscopy (TEM) and scanning tunnelling microscopy (STM), and show regular spacing. Electronic structure calculations of the structure of the core of the dislocations, as well as their location within the epitaxial layer, are presented. The most stable location is found to be at the interface, with the core centred over In. Calculated strain profiles and the thickness at which dislocations should form are in good agreement with available experimental data.

Automatic data distribution and load balancing with space-filling curves: implementation in CONQUEST.

We present an automatic, spatially local data distribution and load balancing scheme applicable to many-body problems running on parallel architectures. The particle distribution is based on spatial decomposition of the simulation cell. A one-dimensional Hilbert curve is mapped onto the three-dimensional real space cell, which reduces the dimensionality of the problem and provides a way to assign different spatially local parts of the cell to each processor. The scheme is independent of the number of processors. It can be used for both ordered and disordered structures and does not depend on the dimensionality or shape of the system. Details of implementation in the linear-scaling density functional code CONQUEST, as well as several case studies of systems of various complexity, containing up to 55 755 particles, are given.

Molecular conduction: do time-dependent simulations tell you more than the Landauer approach?

A dynamical method for simulating steady-state conduction in atomic and molecular wires is presented which is both computationally and conceptually simple. The method is tested by calculating the current-voltage spectrum of a simple diatomic molecular junction, for which the static Landauer approach produces multiple steady-state solutions. The dynamical method quantitatively reproduces the static results and provides information on the stability of the different solutions.

Comment on 'Bi nanolines on Si(001): registry with substrate'.

A recent article (Miwa et al 2005 Nanotechnology 16 2427) casts doubt on the four-dimer-wide Haiku model for the Bi nanoline on Si(001), suggesting instead that the three-dimer-wide Miki model (which had been ruled out) is a better fit in particular to x-ray data. The reasons why the Haiku model provides the best fit to all published data among currently proposed structures are discussed, concentrating on the width and registry of the Bi nanoline, and mentioning new data which shows that under appropriate conditions the two structures coexist in the same surface.

Correlated electron-ion dynamics with open boundaries: formalism.

We extend a new formalism, which allows correlated electron-ion dynamics to be applied to the problem of open boundary conditions. We implement this at the first moment level (allowing heating of ions by electrons) and observe the expected cooling in the classical part of the ionic kinetic energy and current-induced heating in the quantum contribution. The formalism for open boundaries should be easily extended to higher moments of the correlated electron-ion fluctuations.

Atomic force algorithms in density functional theory electronic-structure techniques based on local orbitals.

Electronic structure methods based on density-functional theory, pseudopotentials, and local-orbital basis sets offer a hierarchy of techniques for modeling complex condensed-matter systems with a wide range of precisions and computational speeds. We analyze the relationships between the algorithms for atomic forces in this hierarchy of techniques, going from empirical tight-binding through ab initio tight-binding to full ab initio. The analysis gives a unified overview of the force algorithms as applied within techniques based either on diagonalization or on linear-scaling approaches. The use of these force algorithms is illustrated by practical calculations with the CONQUEST code, in which different techniques in the hierarchy are applied in a concerted manner.