High-Performance and Polarization-Sensitive Imaging Photodetector Based on WS2 /Te Tunneling Heterostructure.

Next-generation imaging systems require photodetectors with high sensitivity, polarization sensitivity, miniaturization, and integration. By virtue of their intriguing attributes, emerging 2D materials offer innovative avenues to meet these requirements. However, the current performance of 2D photodetectors is still below the requirements for practical application owing to the severe interfacial recombination, the lack of photoconductive gain, and insufficient photocarrier collection. Here, a tunneling dominant imaging photodetector based on WS2 /Te heterostructure is reported. This device demonstrates competitive performance, including a remarkable responsivity of 402 A W-1 , an outstanding detectivity of 9.28 × 1013 Jones, a fast rise/decay time of 1.7/3.2 ms, and a high photocurrent anisotropic ratio of 2.5. These outstanding performances can be attributed to the type-I band alignment with carrier transmission barriers and photoinduced tunneling mechanism, allowing reduced interfacial trapping effect, effective photoconductive gains, and anisotropic collection of photocarriers. Significantly, the constructed photodetector is successfully integrated into a polarized light imaging system and an ultra-weak light imaging system to illustrate the imaging capability. These results suggest the promising application prospect of the device in future imaging systems.

Reconfigurable ultra-broadband mode converter based on a two-mode fiber with pressure-loaded phase-shifted long-period alloyed waveguide grating.

We present a reconfigurable ultra-broadband mode converter, which consists of a two-mode fiber (TMF) and pressure-loaded phase-shifted long-period alloyed waveguide grating. We design and fabricate the long-period alloyed waveguide gratings (LPAWG) with SU-8, chromium, and titanium via the photo-lithography and electric beam evaporation technique. With the help of the pressure loaded or released from the LPAWG onto the TMF, the device can realize reconfigurable mode conversion between the LP01 mode and the LP11 mode in the TMF, which is weak sensitive to the state of polarization. The mode conversion efficiency larger than 10 dB can be achieved with operation wavelength range of about 105 nm, which ranges from 1501.9 nm to 1606.7 nm. The proposed device can be further used in the large bandwidth mode division multiplexing (MDM) transmission and optical fiber sensing system based on few-mode fibers.

Three-dimensional mode multiplexer based on adiabatic-tapered waveguides forming vertical directional couplers over C + L band and beyond.

We present a mode multiplexer based on vertical directional couplers that are formed by adiabatic-tapered waveguides. We design and fabricate the device via the micro-fabrication processing to (de)multiplex the E11, E21, and E12 modes from the few-mode bus waveguide. Our experimental device shows a coupling ratio higher than 98.6% and 97.0% for the E21 and E12 modes, respectively, over the C + L band and beyond. The modal cross talk of this device can be lower than -17.1 dB, -18.4 dB, and -15.1 dB caused by the unintended E11, E21, and E12 modes, respectively. This mode multiplexer can work over a broader wavelength range with weak polarization sensitivity, which could be used in the mode-division-multiplexing systems where mode (de)multiplexing is required in the expanded communication wavelength window other than the C-band.

Polarization-sensitive UV photodetector based on ReSe2/GaN mixed-dimensional heterojunction.

Polarization-sensitive photodetectors in the ultraviolet (UV) region have been favored for their great meaning in the field of military and civilian. UV photodetectors based on GaN have aroused much attention due to high photocurrent and high sensitivity. However, the dependence on external power sources and the limited sensitivity to polarized UV light significantly impede the practical application of these photodetectors in UV-polarized photodetection. Herein, a polarization-sensitive UV photodetector based on ReSe2/GaN mixed-dimensional van der Waals (vdWs) heterojunction is proposed. Owing to the high-quality junction and type-II band alignment, the responsivity and specific detectivity reach values of 870 mA/W and 6.8 × 1011 Jones, under 325 nm illumination, respectively. Furthermore, thanks to the strong in-plane anisotropy of ReSe2, the device is highly sensitive to polarized UV light with a photocurrent anisotropic ratio up to 6.67. The findings are expected to bring new opportunities for the development of highly sensitive, high-speed and energy-efficient polarization-sensitive photodetectors.

Non-Layered Te/In2 S3 Tunneling Heterojunctions with Ultrahigh Photoresponsivity and Fast Photoresponse.

A photodetector based on 2D non-layered materials can easily utilize the photogating effect to achieve considerable photogain, but at the cost of response speed. Here, a rationally designed tunneling heterojunction fabricated by vertical stacking of non-layered In2 S3 and Te flakes is studied systematically. The Te/In2 S3 heterojunctions possess type-II band alignment and can transfer to type-I or type-III depending on the electric field applied, allowing for tunable tunneling of the photoinduced carriers. The Te/In2 S3 tunneling heterojunction exhibits a reverse rectification ratio exceeding 104 , an ultralow forward current of 10-12 A, and a current on/off ratio over 105 . A photodetector based on the heterojunctions shows an ultrahigh photoresponsivity of 146 A W-1 in the visible range. Furthermore, the devices exhibit a response time of 5 ms, which is two and four orders of magnitude faster than that of its constituent In2 S3 and Te. The simultaneously improved photocurrent and response speed are attributed to the direct tunneling of the photoinduced carriers, as well as a combined mechanism of photoconductive and photogating effects. In addition, the photodetector exhibits a clear photovoltaic effect, which can work in a self-powered mode.

Ultra-broadband LP11 mode converter with high purity based on long-period fiber grating and an integrated Y-junction.

We report an ultra-broadband LP11 mode converter with high purity based on integrated two shunt-wound long-period fiber gratings (LPFGs) and an adiabatic Y-junction, together with a high-order-mode bandpass filter. Two shunt-wound LPFGs are inscribed by CO2 laser in a two-mode fiber to achieve a 10 dB bandwidth of 50 nm and 51 nm at resonance wavelengths of 1530 nm and 1570 nm, respectively. Meanwhile, the Y-junction fabricated by lithography can be operated over S + C+L band to combine the converted LP11 mode. The presented ultra-broadband mode converter is able to achieve a mode conversion efficiency of 95%, together with a wavelength-dependent loss of less than 3 dB over the S + C+L band. This device has low modal crosstalk of 17 dB between the LP01 and LP11 modes, because most of the residual LP01 mode is further filtered by a high-order-mode bandpass filter at the output port of the Y-junction. The insertion loss of mode converter is estimated to be lower than 2.7 dB, due to the use of low loss polymer material during the fabrication. The proposed ultra-broadband LP11 mode converter with high purity is promising for the application of ultra-broadband mode-division-multiplexing transmission systems.

All-optical light manipulation based on graphene-embedded side-polished fiber.

We present a study of all-optical light manipulation arising in a graphene-embedded side-polished fiber (SPF) with a Norland Optical Adhesives (NOA)-coated structure. With the help of the Pauli blocking effect, such an all-fiber device serves to manage the loss of transverse-electric-polarized light when the control light and the signal light are polarized along the direction parallel to the graphene surface. The insertion loss of this device can be effectively reduced with the NOA coating. An enhanced interaction between the graphene and the propagated light can be achieved via the strong evanescent field of the SPF and longer interaction length. This results in effective all-optical manipulation of light with a modulation depth of 10.4 dB (or modulation efficiency of ∼91%) and a modulation slope of ∼1.3, where the required control power is only about 14 dBm. The device has broadband operation wavelength. The insertion loss for both the signal light and the control light are only about 0.6 dB. The experimental results are well-fitting with the simulation study. Such an all-fiber device has the potential for all-optical signal processing.

Enhanced electronic and optical properties of multi-layer arsenic via strain engineering.

Solar cell is a kind of devices for renewable and environmentally friendly energy conversion. One of the important things for solar cells is conversion efficiency. While much attention has been drawn to improving efficiency, the role of strain engineering in two-dimensional materials is not yet well-understood. Here, we propose aPmc21-As monolayer that can be used as a solar cell absorbing material. The bandgap of single-layerPmc21-As can be tuned from 1.83 to 0 eV by applying tensile strain, while keeping the direct bandgap characteristic. Moreover, it has high light absorption efficiency in the visible and near-infrared regions, which demonstrates a great advantage for improving the conversion efficiency of solar cells. Based on the tunable electronic and optical properties, a novel design strategy for solar cells with a wide absorption range and high absorption efficiency is suggested. Our results not only have direct implication in strain effect on two-dimensional materials, but also give a possible concept for improving the solar cell performance.

Re-Stickable Yarn Supercapacitors with Vaper Phase Polymerized Multi-Layered Polypyrrole Electrodes for Smart Garments.

Yarn supercapacitors have attracted significant attention for wearable energy storage due to their ability to be directly integrated with garments. Conducting polymer polypyrrole (PPy) based yarn supercapacitors show limited cycling stability because of the huge volume changes during the charge-discharge processes. In addition, laundering may cause damage to such yarn supercapacitors. Here, the fabrication of PPy-based re-stickable yarn supercapacitors is reported with good cycling stability by employing vapor phase polymerization (VPP) and water-soluble polyethylene oxide (PEO) film as the adhesive layer. VPP duration and cycle are controlled to achieve multi-layered PPy electrodes. The assembled yarn supercapacitors show a good cycling stability with capacitance retention of 79.1% after 5000 charge-discharge cycles. The energy stored in the yarn supercapacitor is sufficient to power a photodetector. After gluing the yarn supercapacitors onto a PEO film, the devices can be stunk on and peeled off the garment to avoid the mechanical stresses during the washing process. Three yarn supercapacitors connected in parallel on PEO film show negative changes in electrochemical performance after 5 sticking-peeling cycles. This work provides a facile way to fabricate PPy-based re-stickable energy storage devices with high cycling stability for smart garments.

Direct-indirect bandgap transition in monolayer MoS2 induced by an individual Si nanoparticle.

MoS2 is promising for the next generation of electronic and optoelectronic devices by virtue of its unique optical, electrical and mechanical properties. Bandgap engineering of it is an interesting topic. However, the reported factors including temperature, defect, strain and external electric field are difficult to handle precisely. Here, we demonstrated direct-indirect bandgap transition in monolayer MoS2 induced by an individual Si nanoparticle. We observed photoluminescence (PL) emission with obvious spectral redshift and broadening in the MoS2/Si heterostructures after depositing Si nanoparticles onto the surface of monolayer MoS2. Raman spectra of heterostructures show measurable shifts in contrast with the bare MoS2. Energy transfer between MoS2 and Si nanoparticles did not happen, which is demonstrated by scattering spectra of MoS2/Si heterostructures. In addition, the natural oxide layer presented on the surface of Si nanoparticles can effectively prevent the carrier transferring from Si nanoparticles to MoS2. Thus, we attribute the direct-indirect bandgap transition of monolayer MoS2 to the strain induced by Si nanoparticles controlled by their sizes. The PL intensity of MoS2/Si heterostructure depends on the size of Si nanoparticles, resulting from the enhanced optical absorption of monolayer MoS2 based on Mie resonances of Si nanoparticles. The MoS2/Si heterostructure is promising for photodetector and circuit integration.

2D In2 S3 Nanoflake Coupled with Graphene toward High-Sensitivity and Fast-Response Bulk-Silicon Schottky Photodetector.

Silicon-based electronic devices, especially graphene/Si photodetectors (Gr/Si PDs), have triggered tremendous attention due to their simple structure and flexible integration of the Schottky junction. However, due to the relatively poor light-matter interaction and mobility of silicon, these Gr/Si PDs typically suffer an inevitable compromise between photoresponsivity and response speed. Herein, a novel strategy for coupling 2D In2 S3 with Gr/Si PDs is demonstrated. The introduction of the double-heterojunction design not only strengthens the light absorption of graphene/Si but also combines the advantages of the photogating effect and photovoltaic effect, which suppresses the dark current, accelerates the separation of photogenerated carriers, and brings photoconductive gain. As a result, In2 S3 /graphene/Si devices present an ultrahigh photoresponsivity of 4.53 × 104 A W-1 and fast response speed less than 40 µs, simultaneously. These parameters are an order of magnitude higher than pristine Gr/Si PDs and among the best values compared with reported 2D materials/Si heterojunction PDs. Furthermore, the In2 S3 /graphene/Si PD expresses outstanding long-term stability, with negligible performance degradation even after 1 month in air or 1000 cycles of operation. These findings highlight a simple and novel strategy for constructing high-sensitivity and ultrafast Gr/Si PDs for further optoelectronic applications.

A flexible, transparent and high-performance gas sensor based on layer-materials for wearable technology.

Gas sensors play a vital role among a wide range of practical applications. Recently, propelled by the development of layered materials, gas sensors have gained much progress. However, the high operation temperature has restricted their further application. Herein, via a facile pulsed laser deposition (PLD) method, we demonstrate a flexible, transparent and high-performance gas sensor made of highly-crystalline indium selenide (In2Se3) film. Under UV-vis-NIR light or even solar energy activation, the constructed gas sensors exhibit superior properties for detecting acetylene (C2H2) gas at room temperature. We attribute these properties to the photo-induced charger transfer mechanism upon C2H2 molecule adsorption. Moreover, no apparent degradation in the device properties is observed even after 100 bending cycles. In addition, we can also fabricate this device on rigid substrates, which is also capable to detect gas molecules at room temperature. These results unambiguously distinguish In2Se3 as a new candidate for future application in monitoring C2H2 gas at room temperature and open up new opportunities for developing next generation full-spectrum activated gas sensors.

Flexible, transparent and ultra-broadband photodetector based on large-area WSe2 film for wearable devices.

Although two-dimensional (2D) materials have attracted considerable research interest for use in the development of innovative wearable optoelectronic systems, the integrated optoelectronic performance of 2D materials photodetectors, including flexibility, transparency, broadband response and stability in air, remains quite low to date. Here, we demonstrate a flexible, transparent, high-stability and ultra-broadband photodetector made using large-area and highly-crystalline WSe2 films that were prepared by pulsed-laser deposition (PLD). Benefiting from the 2D physics of WSe2 films, this device exhibits excellent average transparency of 72% in the visible range and superior photoresponse characteristics, including an ultra-broadband detection spectral range from 370 to 1064 nm, reversible photoresponsivity approaching 0.92 A W(-1), external quantum efficiency of up to 180% and a relatively fast response time of 0.9 s. The fabricated photodetector also demonstrates outstanding mechanical flexibility and durability in air. Also, because of the wide compatibility of the PLD-grown WSe2 film, we can fabricate various photodetectors on multiple flexible or rigid substrates, and all these devices will exhibit distinctive switching behavior and superior responsivity. These indicate a possible new strategy for the design and integration of flexible, transparent and broadband photodetectors based on large-area WSe2 films, with great potential for practical applications in the wearable optoelectronic devices.

Two-Dimensional GeS/SnSe2 Tunneling Photodiode with Bidirectional Photoresponse and High Polarization Sensitivity.

A two-dimensional (2D) broken-gap (type-III) p-n heterojunction has a unique charge transport mechanism because of nonoverlapping energy bands. In light of this, type-III band alignment can be used in tunneling field-effect transistors (TFETs) and Esaki diodes with tunable operation and low consumption by highlighting the advantages of tunneling mechanisms. In recent years, 2D tunneling photodiodes have gradually attracted attention for novel optoelectronic performance with a combination of strong light-matter interaction and tunable band alignment. However, an in-depth understanding of the tunneling mechanisms should be further investigated, especially for developing electronic and optoelectronic applications. Here, we report a type-III tunneling photodiode based on a 2D multilayered p-GeS/n+-SnSe2 heterostructure, which is first fabricated by the mechanical exfoliation and dry transfer method. Through the Simmons approximation, its various tunneling transport mechanisms dependent on bias and light are demonstrated as the origin of excellent bidirectional photoresponse performance. Moreover, compared to the traditional p-n photodiode, the device enables bidirectional photoresponse capability, including maximum responsivity values of 43 and 8.7 A/W at Vds = 1 and -1 V, respectively, with distinctive photoactive regions from the scanning photocurrent mapping. Noticeably, benefiting from the in-plane anisotropic structure of GeS, the device exhibits an enhanced photocurrent anisotropic ratio of 9, driven by the broader depletion region at Vds = -3 V under 635 nm irradiation. Above all, the results suggest that our designed architecture can be potentially applied to CMOS imaging sensors and polarization-sensitive photodetectors.

Sandwiched WS2/MoTe2/WS2 Heterostructure with a Completely Depleted Interlayer for a Photodetector with Outstanding Detectivity.

Photodetectors based on two-dimensional van der Waals (2D vdW) heterostructures with high detectivity and rapid response have emerged as promising candidates for next-generation imaging applications. However, the practical application of currently studied 2D vdW heterostructures faces challenges related to insufficient light absorption and inadequate separation of photocarriers. To address these challenges, we present a sandwiched WS2/MoTe2/WS2 heterostructure with a completely depleted interlayer, integrated on a mirror electrode, for a highly efficient photodetector. This well-designed structure enhances light-matter interactions while facilitating effective separation and rapid collection of photocarriers. The resulting photodetector exhibits a broadband photoresponse spanning from deep ultraviolet to near-infrared wavelengths. When operated in self-powered mode, the device demonstrates an exceptional response speed of 22/34 µs, along with an impressive detectivity of 8.27 × 1010 Jones under 635 nm illumination. Additionally, by applying a bias voltage of -1 V, the detectivity can be further increased to 1.49 × 1012 Jones, while still maintaining a rapid response speed of 180/190 µs. Leveraging these outstanding performance metrics, high-resolution visible-near-infrared light imaging has been successfully demonstrated using this device. Our findings provide valuable insights into the optimization of device architecture for diverse photoelectric applications.

Polarization-Sensitive Self-Powered Schottky Photodetector with High Photovoltaic Performance Induced by Geometry-Asymmetric Contacts.

Polarization-sensitive photodetectors have attracted considerable attention owing to their potential application prospects in navigation, optical switching, and communication. However, it remains challenging to develop a facile and effective strategy to simultaneously meet the demands of low power consumption, high performance, and excellent polarization sensitivity. Herein, a series of low-symmetry two-dimensional (2D) ReSe2 Schottky photodetectors with geometry-asymmetric contacts are constructed. These devices exhibit excellent photoelectrical performance and impressive polarization sensitivity in the self-powered mode owing to the difference in the Schottky barrier height induced by the asymmetric contact areas, interfacial states, and thickness difference. Particularly, an outstanding responsivity of 379 mA/W, a decent specific detectivity of 6.8 × 1011 Jones, and a high light on/off ratio (Ilight/Idark) of over 105 under 635 nm light illumination are achieved. Scanning photocurrent mapping (SPCM) measurements further confirm that the ReSe2/drain overlapped region (corresponding to the smaller contact area side) with a higher Schottky barrier height plays a dominant role in the generation of photocurrent. Furthermore, the proposed device displays impressive polarization ratios (PRs) of 3.1 and 3.6 at zero bias under 635 and 808 nm irradiation, respectively. The high-resolution single-pixel imaging capability is also demonstrated. This work reveals the great potential of the ReSe2 Schottky photodetector with geometry-asymmetric contacts for high-performance, self-powered, and polarization-sensitive photodetection.

Ideal Photodetector Based on WS2/CuInP2S6 Heterostructure by Combining Band Engineering and Ferroelectric Modulation.

Two-dimensional van der Waals (2D vdW) heterostructure photodetectors have garnered significant attention for their potential applications in next-generation optoelectronic systems. However, current 2D vdW photodetectors inevitably encounter compromises between responsivity, detectivity, and response time due to the absence of multilevel regulation for free and photoexcited carriers, thereby restricting their widespread applications. To address this challenge, we propose an efficient 2D WS2/CuInP2S6 vdW heterostructure photodetector by combining band engineering and ferroelectric modulation. In this device, the asymmetric conduction and valence band offsets effectively block the majority carriers (free electrons), while photoexcited holes are efficiently tunneled and rapidly collected by the bottom electrode. Additionally, the ferroelectric CuInP2S6 layer generates polarization states that reconfigure the built-in electric field, reducing dark current and facilitating the separation of photocarriers. Moreover, photoelectrons are trapped during long-distance lateral transport, resulting in a high photoconductivity gain. Consequently, the device achieves an impressive responsivity of 88 A W-1, an outstanding specific detectivity of 3.4 × 1013 Jones, and a fast response time of 37.6/371.3 µs. Moreover, the capability of high-resolution imaging under various wavelengths and fast optical communication has been successfully demonstrated using this device, highlighting its promising application prospects in future optoelectronic systems.

Polarization- and Gate-Tunable Optoelectronic Reverse in 2D Semimetal/Semiconductor Photovoltaic Heterostructure.

Polarimetric photodetector can acquire higher resolution and more surface information of imaging targets in complex environments due to the identification of light polarization. To date, the existing technologies yet sustain the poor polarization sensitivity (<10), far from market application requirement. Here, the photovoltaic detectors with polarization- and gate-tunable optoelectronic reverse phenomenon are developed based on semimetal 1T'-MoTe2 and ambipolar WSe2 . The device exhibits gate-tunable reverse in rectifying and photovoltaic characters due to the directional inversion of energy band, yielding a wide range of current rectification ratio from 10-2 to 103 and a clear object imaging with 100 × 100 pixels. Acting as a polarimetric photodetector, the polarization ratio (PR) value can reach a steady state value of ≈30, which is compelling among the state-of-the-art 2D-based polarized detectors. The sign reversal of polarization-sensitive photocurrent by varying the light polarization angles is also observed, that can enable the PR value with a potential to cover possible numbers (1→+∞/-∞→-1). This work develops a photovoltaic detector with polarization- and gate-tunable optoelectronic reverse phenomenon, making a significant progress in polarimetric imaging and multifunction integration applications.

2D Free-Standing GeS1-xSex with Composition-Tunable Bandgap for Tailored Polarimetric Optoelectronics.

Germanium-based monochalcogenides (i.e., GeS and GeSe) with desirable properties are promising candidates for the development of next-generation optoelectronic devices. However, they are still stuck with challenges, such as relatively fixed electronic band structure, unconfigurable optoelectronic characteristics, and difficulty in achieving free-standing growth. Herein, it is demonstrated that two-dimensional (2D) free-standing GeS1-xSex (0 ≤ x ≤ 1) nanoplates can be grown by low-pressure rapid physical vapor deposition (LPRPVD), fulfilling a continuously composition-tunable optical bandgap and electronic band structure. By leveraging the synergistic effect of composition-dependent modulation and free-standing growth, GeS1-xSex-based optoelectronic devices exhibit significantly configurable hole mobility from 6.22 × 10-4 to 1.24 cm2V-1s⁻1 and tunable responsivity from 8.6 to 311 A W-1 (635 nm), as x varies from 0 to 1. Furthermore, the polarimetric sensitivity can be tailored from 4.3 (GeS0.29Se0.71) to 1.8 (GeSe) benefiting from alloy engineering. Finally, the tailored imaging capability is also demonstrated to show the application potential of GeS1-xSex alloy nanoplates. This work broadens the functionality of conventional binary materials and motivates the development of tailored polarimetric optoelectronic devices.

Activation of the Photosensitive Potential of 2D GaSe by Interfacial Engineering.

Two-dimensional (2D) gallium selenide (GaSe) holds great promise for pioneering advancements in photodetection due to its exceptional electronic and optoelectronic properties. However, in conventional photodetectors, 2D GaSe only functions as a photosensitive layer, failing to fully exploit its inherent photosensitive potential. Herein, we propose an ultrasensitive photodetector based on out-of-plane 2D GaSe/MoSe2 heterostructure. Through interfacial engineering, 2D GaSe serves not only as the photosensitive layer but also as the photoconductive gain and passivation layer, introducing a photogating effect and extending the lifetime of photocarriers. Capitalizing on these features, the device exhibits exceptional photodetection performance, including a responsivity of 28 800 A/W, specific detectivity of 7.1 × 1014 Jones, light on/off ratio of 1.2 × 106, and rise/fall time of 112.4/426.8 µs. Moreover, high-resolution imaging under various wavelengths is successfully demonstrated using this device. Additionally, we showcase the generality of this device design by activating the photosensitive potential of 2D GaSe with other transition metal dichalcogenides (TMDCs) such as WSe2, WS2, and MoS2. This work provides inspiration for future development in high-performance photodetectors, shining a spotlight on the potential of 2D GaSe and its heterostructure.