Graphene FETs with Low-Resistance Hybrid Contacts for Improved High Frequency Performance.

This work proposes a novel geometry field effect transistor with graphene as a channel-graphene field-effect transistor (GFET), having a hybrid contact that consists of an ohmic source/drain and its extended part towards the gate, which is capacitively coupled to the channel. The ohmic contacts are used for direct current (DC) biasing, whereas their capacitive extension reduces access region length and provides the radio frequency (RF) signal a low impedance path. Minimization of the access region length, along with the paralleling of ohmic contact's resistance and resistive part of capacitively coupled contact's impedance, lower the overall source/drain resistance, which results in an increase in current gain cut-off frequency, fT. The DC and high-frequency characteristics of the two chosen conventional baseline GFETs, and their modified versions with proposed hybrid contacts, have been extensively studied, compared, and analyzed using numerical and analytical techniques.

Tunable room temperature THz sources based on nonlinear mixing in a hybrid optical and THz micro-ring resonator.

We propose and systematically investigate a novel tunable, compact room temperature terahertz (THz) source based on difference frequency generation in a hybrid optical and THz micro-ring resonator. We describe detailed design steps of the source capable of generating THz wave in 0.5-10 THz with a tunability resolution of 0.05 THz by using high second order optical susceptibility (χ((2))) in crystals and polymers. In order to enhance THz generation compared to bulk nonlinear material, we employ a nonlinear optical micro-ring resonator with high-Q resonant modes for infrared input waves. Another ring oscillator with the same outer radius underneath the nonlinear ring with an insulation of SiO2 layer supports the generated THz with resonant modes and out-couples them into a THz waveguide. The phase matching condition is satisfied by engineering both the optical and THz resonators with appropriate effective indices. We analytically estimate THz output power of the device by using practical values of susceptibility in available crystals and polymers. The proposed source can enable tunable, compact THz emitters, on-chip integrated spectrometers, inspire a broader use of THz sources and motivate many important potential THz applications in different fields.