Chirality-Induced Spin-Polarized State of a Chiral Crystal CrNb_{3}S_{6}.

Chirality-induced spin transport phenomena are investigated at room temperature without magnetic fields in a monoaxial chiral dichalcogenide CrNb_{3}S_{6}. We found that spin polarization occurs in these chiral bulk crystals under a charge current flowing along the principal c axis. Such phenomena are detected as an inverse spin Hall signal which is induced on the detection electrode that absorbs polarized spin from the chiral crystal. The inverse response is observed when applying the charge current into the detection electrode. The signal sign reverses in the device with the opposite chirality. Furthermore, the spin signals are found over micrometer length scales in a nonlocal configuration. Such a robust generation and protection of the spin-polarized state is discussed based on a one-dimensional model with an antisymmetric spin-orbit coupling.

Anomalous Nonreciprocal Electrical Transport on Chiral Magnetic Order.

Nonreciprocal flow of conduction electrons is systematically investigated in a monoaxial chiral helimagnet CrNb_{3}S_{6}. We found that such directional dichroism of the electrical transport phenomena, called the electrical magnetochiral (EMC) effect, occurs in a wide range of magnetic fields and temperatures. The EMC signal turns out to be considerably enhanced below the magnetic ordering temperature, suggesting a strong influence of the chiral magnetic order on this anomalous EMC transport property. The EMC coefficients are separately evaluated in terms of crystalline and magnetic contributions in the magnetic phase diagram.

Metallic Transport in Monolayer and Multilayer Molybdenum Disulfides by Molecular Surface Charge Transfer Doping.

Carrier modulation in transition-metal dichalcogenides (TMDCs) is of importance for applying electronic devices to tune their transport properties and controlling phases, including metallic to superconductivity. Although the surface charge transfer doping method has shown a strong modulation ability of the electronic structures in TMDCs and a degenerately doped state has been proposed, the details of the electronic states have not been elucidated, and this transport behavior should show a considerable thickness dependence in TMDCs. In this study, we characterize the metallic transport behavior in the monolayer and multilayer MoS2 under surface charge transfer doping with a strong electron dopant, benzyl viologen (BV) molecules. The metallic behavior transforms to an insulative state under a negative gate voltage. Consequently, metal-insulator transition (MIT) was observed in both monolayer and multilayer MoS2 correlating with the critical conductivity of order e2/h. In the multilayer case, the BV molecules strongly modulated the topmost surface layer in the bulk MoS2; the transfer characteristics suggested a crossover from a heterogeneously doped state with a doped topmost layer to doping in the deep layers caused by the variation in the gate voltage. The findings of this work will be useful for understanding the device characteristics of thin-layered materials and for applying them to the controlling phases via carrier modulation.