Reduction-Assisted Calcination Enhances the Photocatalytic Activity of ZnO and WO3 Nanoparticles in Biomass Conversion.

Rising energy needs and environmental issues have prompted the creation of effective and affordable photocatalysts for converting biomass. Utilizing abundant biomass, oxidation of 5-hydroxymethylfurfural (HMF) emerges as a method for generating high-value chemicals from biomass, offering an alternative to fossil fuels. We synthesized defect-engineered metal oxides (ZnO and WO3) by calcination with NaBH4 as a reducing agent. Atomic-level analyses identified oxygen vacancy defects induced by the reduction of metal ions within the metal oxide nanoparticles. Further analysis showed an unchanged band gap but an up to 4-fold increase in current density. This enhancement is attributed to the trapping of electrons in defect sites created during the calcination process. The formation of new electron donor states hindered photogenerated electron-hole recombination, enhancing the photocatalytic efficiency of the metal oxide. The photocatalytic degradation yield of HMF was over 95%, and the selective organic products 2,5-diformylfuran (DFF) and 2,5-furandicarboxylic acid (FDCA) were obtained without byproducts. Kinetic studies demonstrated that the photocatalytic conversion reaction rates were accelerated by up to 3.5-fold. Improved photocatalytic activity for HMF oxidation was achieved by introducing oxygen vacancy defects upon the reduction of metal ions within the metal oxides. Our results provide a promising approach for designing efficient photocatalysts.

Enhanced Photocatalytic Activities of Sodium Borohydride-Calcined Magnetic Manganese Ferrite Nanoparticles.

The synthesis, enhancement, and maintenance of magnetite-based catalyst nanoparticles (NPs) are important for photocatalytic activity and recovery rates. We used a sodium borohydride (NaBH4) calcination method to modify MnFe2O4 nanoparticles to optimize their performance in the photocatalytic oxidation of 2,5-hydroxymethylfurfural. The results indicated a 94% increase in photocatalytic efficiency, while magnetic assessments performed using a vibrating sample magnetometer showed an 8.9% improvement in magnetic properties without degradation. These findings show the dual benefits of increased photocatalytic performance with strong magnetic properties, which are important for the application and reusability of photocatalysts. The recycling of these photocatalysts reduces secondary pollution and increases the process cost-effectiveness. These results contribute to the solution of problems with the use of photocatalytic materials.

Enhancement of Sulfur Source-Dependent Zn Vacancies in Different Photocatalytic Performances of ZnIn2S4 Nanoparticles.

This study focuses on the synthesis and investigation of ZnIn2S4 nanoparticle (NP) photocatalysts treated with different sulfur sources, thioacetamide (TAA), or thiourea (TU), to explore their wavelength-dependent photocatalytic activity. The research aims to understand the impact of Zn vacancies present on the surface of ZnIn2S4 NPs. The investigation involves electron spin resonance and in situ X-ray photoelectron spectroscopy to study the photocatalytic activity of ZnIn2S4-TU and ZnIn2S4-TAA NPs, following the characterization of surface morphology and electronic properties using high-resolution transmission electron microscopy and X-ray diffraction. Additionally, the study delves into the wavelength-dependent photocatalytic degradation (PCD) activity of the ZnIn2S4 NPs using 2,5-hydroxymethylfurfural (HMF) across a wide range. Notably, the selective oxidation of HMF using ZnIn2S4-TU NPs resulted in the formation of 2,5-furandicarboxylic acid (FDCA) via 2,5-diformylfuran, with an efficiency exceeding 40% over the broad wavelength range. The research demonstrates that the irradiation wavelength for PCD is influenced by the number of defect structures introduced into the ZnIn2S4 NPs through the sulfur source.

AP-XPS beamline, a platform for operando science at Pohang Accelerator Laboratory.

Beamline 8A (BL 8A) is an undulator-based soft X-ray beamline at Pohang Accelerator Laboratory. This beamline is aimed at high-resolution ambient-pressure X-ray photoelectron spectroscopy (AP-XPS), soft X-ray absorption spectroscopy (soft-XAS) and scanning photoemission microscopy (SPEM) experiments. BL 8A has two branches, 8A1 SPEM and 8A2 AP-XPS, that share a plane undulator, the first mirror (M1) and the monochromator. The photon beam is switched between the two branches by changing the refocusing mirrors after the monochromator. The acceptance angle of M1 is kept glancing at 1.2°, and Pt is coated onto the mirrors to achieve high reflectance, which ensures a wide photon energy range (100-2000 eV) with high resolution at a photon flux of ∼1013 photons s-1. In this article, the main properties and performance of the beamline are reported, together with selected experiments performed on the new beamline and experimental system.

Long-Term Chemical Aging of Hybrid Halide Perovskites.

Because the power conversion efficiency (PCE) of hybrid halide perovskite solar cells (PSCs) could exceed 24%, extensive research has been focused on improving their long-term stability for commercialization in the near future. In a previous study, we reported that the addition of a number of ionized iodide (triiodide: I3-) ions during perovskite film formation significantly improved the efficiency of PSCs by reducing deep-level defects in the perovskite layer. Understanding the relationship between the concentration of these defects and the long-term chemical aging of PSCs is important not only for obtaining fundamental insight into the perovskite materials but also for studying the long-term chemical stability of PSCs. Herein we aim to identify the origin of the natural decay in PCE during long-term chemical aging of PSCs in the dark based on formamidinium lead triiodide by comparing the performance of control and low-defect (LD) devices. After aging for 200 days, the change in the PCE of the LD devices (1.3%) was found to be half that of the control devices (2.6%). We investigated this difference using grazing incidence wide-angle X-ray scattering, deep-level transient spectroscopy, scanning photoelectron microscopy, and high-resolution photoemission spectroscopy. The addition of I3- was found to reduce the amounts of hydroxide and Ox in the halide perovskites (HPs), affecting the migration of defects and the structural transformation of the HPs.

Long-Range Lattice Engineering of MoTe2 by a 2D Electride.

Doping two-dimensional (2D) semiconductors beyond their degenerate levels provides the opportunity to investigate extreme carrier density-driven superconductivity and phase transition in 2D systems. Chemical functionalization and the ionic gating have achieved the high doping density, but their effective ranges have been limited to ∼1 nm, which restricts the use of highly doped 2D semiconductors. Here, we report on electron diffusion from the 2D electride [Ca2N]+·e- to MoTe2 over a distance of 100 nm from the contact interface, generating an electron doping density higher than 1.6 × 1014 cm-2 and a lattice symmetry change of MoTe2 as a consequence of the extreme doping. The long-range lattice symmetry change, suggesting a length scale surpassing the depletion width of conventional metal-semiconductor junctions, was a consequence of the low work function (2.6 eV) with highly mobile anionic electron layers of [Ca2N]+·e-. The combination of 2D electrides and layered materials yields a novel material design in terms of doping and lattice engineering.

Patternable large-scale molybdenium disulfide atomic layers grown by gold-assisted chemical vapor deposition.

A novel way to grow MoS2 on a large scale with uniformity and in desired patterns is developed. We use Au film as a catalyst on which [Mo(CO)6 ] vapor decomposes to form a Mo-Au surface alloy that is an ideal Mo reservoir for the growth of atomic layers of MoS2 . Upon exposure to H2 S, this surface alloy transforms into a few layers of MoS2 , which can be isolated and transferred on an arbitrary substrate. By simply patterning Au catalyst film by conventional lithographic techniques, MoS2 atomic layers in desired patterns can be fabricated.

Growth of Monolayer and Multilayer MoS2 Films by Selection of Growth Mode: Two Pathways via Chemisorption and Physisorption of an Inorganic Molecular Precursor.

We report facile growth methods for high-quality monolayer and multilayer MoS2 films using MoOCl4 as the vapor-phase molecular Mo precursor. Compared to the conventional covalent solid-type Mo precursors, the growth pressure of MoOCl4 can be precisely controlled. This enables the selection of growth mode by adjusting growth pressure, which facilitates the control of the growth behavior as the growth termination at a monolayer or as the continuous growth to a multilayer. In addition, the use of carbon-free precursors eliminates concerns about carbon contamination in the produced MoS2 films. Systematic studies for unveiling the growth mechanism proved two growth modes, which are predominantly the physisorption and chemisorption of MoOCl4. Consequently, the thickness of MoS2 can be controlled by our method as the application demands.

Tunable Optical Transition in 2H-MoS2 via Direct Electrochemical Engineering of Vacancy Defects and Surface S-C Bonds.

Although surface engineering has been regarded to be a great approach to modulate the optical and electrical properties of nanomaterials, the spontaneous covalent functionalization on semiconducting 2H-MoS2 is a notoriously difficult process, while several reactions have been performed on metallic 1T-MoS2. This limitation in functionalization is attributed to the difficulty of electron transfer from 2H-TMD to the reacting molecules due to its semiconducting property and neutral charge state. Unfortunately, this is an all too important prerequisite step toward creating chemically reactive radical species for surface functionalization reactions. Herein, an electrochemical approach was developed for facilitating direct surface functionalization of 2H-MoS2 with 4-bromobenzene diazonium tetraborate (4-BBDT). Successful functionalization was characterized using various microscopic and spectroscopic analyses. During the course of investigating the change of optical transition seen for modified 2H-MoS2 using photoluminescence measurement combined with theoretical calculations, our study uncovered that the controlling S-C bond and sulfur vacancy generation could tune the electronic structure of functionalized 2H-MoS2.

Comparative study of catalytic activities among transition metal-doped IrO2 nanoparticles.

Catalytic activities of transition metal-doped IrO2 nanoparticles (TM-IrO2 NPs; TM = Cr, Mn, Fe, Co, or Ni) are compared for various oxidation reactions such as electrochemical oxygen evolution reaction (OER), gas-phase photo-oxidation of thiol function group, and CO oxidative conversion. Here, we discovered a series of TM-IrO2 catalysts have a common activity trend for these oxidation reactions, and their activities are closely related with modified electronic states of IrO2, strongly affected by the types of the transition metal across the periodic table. For all oxidation reactions, Cr- and Mn-IrO2 achieved the highest oxidation catalytic activity, and sequentially decreased activities were obtained with Fe, Co, and Ni doped IrO2. For instance, the highest OER activity was achieved by Cr or Mn doping exhibiting the smallest overpotential η = 275~230 mV at 10 mA/cm2, while Ni-IrO2 showed rather larger overpotential (η = 347 mV) even compared with non-doped IrO2 (η = 314 mV). Scanning transmission X-ray microscopy and high-resolution photoemission spectra of TM-IrO2 indicated dopant metals modified the Ir-O interaction and thus increasing oxygen vacancy defects in IrO2. Strongly positive correlation was observed between the catalytic activities and vacancy states. The amount of defect related signals was observed the most for Cr- or Mn-IrO2, less so for Fe- or Co-IrO2, and unnoted for Ni-IrO2 compared with bare IrO2. Based on these catalytic activities and surface spectroscopic analysis results, vacancy defects induced by doping in TM-IrO2 NPs are proposed to contribute to enhance the oxidation activities.

Enhanced Performance of Field-Effect Transistors Based on Black Phosphorus Channels Reduced by Galvanic Corrosion of Al Overlayers.

Two-dimensional (2D)-layered semiconducting materials with considerable band gaps are emerging as a new class of materials applicable to next-generation devices. Particularly, black phosphorus (BP) is considered to be very promising for next-generation 2D electrical and optical devices because of its high carrier mobility of 200-1000 cm2 V-1 s-1 and large on/off ratio of 104 to 105 in field-effect transistors (FETs). However, its environmental instability in air requires fabrication processes in a glovebox filled with nitrogen or argon gas followed by encapsulation, passivation, and chemical functionalization of BP. Here, we report a new method for reduction of BP-channel devices fabricated without the use of a glovebox by galvanic corrosion of an Al overlayer. The reduction of BP induced by an anodic oxidation of Al overlayer is demonstrated through surface characterization of BP using atomic force microscopy, Raman spectroscopy, and X-ray photoemission spectroscopy along with electrical measurement of a BP-channel FET. After the deposition of an Al overlayer, the FET device shows a significantly enhanced performance, including restoration of ambipolar transport, high carrier mobility of 220 cm2 V-1 s-1, low subthreshold swing of 0.73 V/decade, and low interface trap density of 7.8 × 1011 cm-2 eV-1. These improvements are attributed to both the reduction of the BP channel and the formation of an Al2O3 interfacial layer resulting in a high- k screening effect. Moreover, ambipolar behavior of our BP-channel FET device combined with charge-trap behavior can be utilized for implementing reconfigurable memory and neuromorphic computing applications. Our study offers a simple device fabrication process for BP-channel FETs with high performance using galvanic oxidation of Al overlayers.

Heterogeneous Defect Domains in Single-Crystalline Hexagonal WS2.

Single-crystalline monolayer hexagonal WS2 is segmented into alternating triangular domains: sulfur-vacancy (SV)-rich and tungsten-vacancy (WV)-rich domains. The WV-rich domain with deep-trap states reveals an electron-dedoping effect, and the electron mobility and photoluminescence are lower than those of the SV-rich domain with shallow-donor states by one order of magnitude. The vacancy-induced strain and doping effects are investigated via Raman and scanning photoelectron microscopy.

Carbon-Heteroatom Bond Formation by an Ultrasonic Chemical Reaction for Energy Storage Systems.

The direct formation of CN and CO bonds from inert gases is essential for chemical/biological processes and energy storage systems. However, its application to carbon nanomaterials for improved energy storage remains technologically challenging. A simple and very fast method to form CN and CO bonds in reduced graphene oxide (RGO) and carbon nanotubes (CNTs) by an ultrasonic chemical reaction is described. Electrodes of nitrogen- or oxygen-doped RGO (N-RGO or O-RGO, respectively) are fabricated via the fixation between N2 or O2 carrier gas molecules and ultrasonically activated RGO. The materials exhibit much higher capacitance after doping (133, 284, and 74 F g-1 for O-RGO, N-RGO, and RGO, respectively). Furthermore, the doped 2D RGO and 1D CNT materials are prepared by layer-by-layer deposition using ultrasonic spray to form 3D porous electrodes. These electrodes demonstrate very high specific capacitances (62.8 mF cm-2 and 621 F g-1 at 10 mV s-1 for N-RGO/N-CNT at 1:1, v/v), high cycling stability, and structural flexibility.

Efficient CO Oxidation by 50-Facet Cu2O Nanocrystals Coated with CuO Nanoparticles.

As carbon monoxide oxidation is widely used for various chemical processes (such as methanol synthesis and water-gas shift reactions H2O + CO ⇄ CO2 + H2) as well as in industry, it is essential to develop highly energy efficient, inexpensive, and eco-friendly catalysts for CO oxidation. Here we report green synthesis of ∼10 nm sized CuO nanoparticles (NPs) aggregated on ∼400 nm sized 50-facet Cu2O polyhedral nanocrystals. This CuO-NPs/50-facet Cu2O shows remarkable CO oxidation reactivity with very high specific CO oxidation activity (4.5 µmolCO m-2 s-1 at 130 °C) and near-complete 99.5% CO conversion efficiency at ∼175 °C. This outstanding catalytic performance by CuO NPs over the pristine multifaceted Cu2O nanocrystals is attributed to the surface oxygen defects present in CuO NPs which facilitate binding of CO and O2 on their surfaces. This new material opens up new possibilities of replacing the usage of expensive CO oxidation materials.

Enhancement of Photo-Oxidation Activities Depending on Structural Distortion of Fe-Doped TiO2 Nanoparticles.

To design a high-performance photocatalytic system with TiO2, it is necessary to reduce the bandgap and enhance the absorption efficiency. The reduction of the bandgap to the visible range was investigated with reference to the surface distortion of anatase TiO2 nanoparticles induced by varying Fe doping concentrations. Fe-doped TiO2 nanoparticles (Fe@TiO2) were synthesized by a hydrothermal method and analyzed by various surface analysis techniques such as transmission electron microscopy, Raman spectroscopy, X-ray diffraction, scanning transmission X-ray microscopy, and high-resolution photoemission spectroscopy. We observed that Fe doping over 5 wt.% gave rise to a distorted structure, i.e., Fe2Ti3O9, indicating numerous Ti(3+) and oxygen-vacancy sites. The Ti(3+) sites act as electron trap sites to deliver the electron to O2 as well as introduce the dopant level inside the bandgap, resulting in a significant increase in the photocatalytic oxidation reaction of thiol (-SH) of 2-aminothiophenol to sulfonic acid (-SO3H) under ultraviolet and visible light illumination.

Charge transport-driven selective oxidation of graphene.

Due to the tunability of the physical, electrical, and optical characteristics of graphene, precisely controlling graphene oxidation is of great importance for potential applications of graphene-based electronics. Here, we demonstrate a facile and precise way for graphene oxidation controlled by photoexcited charge transfer depending on the substrate and bias voltage. It is observed that graphene on TiO2 is easily oxidized under UV-ozone treatment, while graphene on SiO2 remains unchanged. The mechanism for the selective oxidation of graphene on TiO2 is associated with charge transfer from the TiO2 to the graphene. Raman spectra were used to investigate the graphene following applied bias voltages on the graphene/TiO2 diode under UV-ozone exposure. We found that under a reverse bias of 0.6 V on the graphene/TiO2 diode, graphene oxidation was accelerated under UV-ozone exposure, thus confirming the role of charge transfer between the graphene and the TiO2 that results in the selective oxidation of the graphene. The selective oxidation of graphene can be utilized for the precise, nanoscale patterning of the graphene oxide and locally patterned chemical doping, finally leading to the feasibility and expansion of a variety of graphene-based applications.

Comparative study of photocatalytic activities of hydrothermally grown ZnO nanorod on Si(001) wafer and FTO glass substrates.

ZnO nanorods have been grown on Si(001) wafer and fluorine-doped tin oxide (FTO) glass substrates for 1 and 4 h with the hydrothermal methods. The morphologies and photocatalytic activities of the ZnO nanorods were found to depend on the substrates. We investigated their properties by using spectroscopic analysis and demonstrated that the shape of nanorod and the ratios of external defects can be controlled by varying the substrates. Our experiments revealed that the nanorods grown on Si(001) have a single-crystalline wurtzite structure with (002) facets and that the number of surface oxygen defects increases with their length as the growth time increases. The nanorods grown on Si(001) have different facets, in particular wider (002) facets, and a higher ratio of the oxygen defect than the nanorods on FTO glass substrate. Moreover, the photocatalytic activities with respect to 2-aminothiophenol (2-ATP) of these nanorods were investigated with high-resolution photoemission spectroscopy (HRPES). We demonstrated that their photocatalytic activity is influenced by the ratios of surface oxygen defects, which varies with the substrate surface.

Seamless lamination of a concave-convex architecture with single-layer graphene.

Graphene has been used as an electrode and channel material in electronic devices because of its superior physical properties. Recently, electronic devices have changed from a planar to a complicated three-dimensional (3D) geometry to overcome the limitations of planar devices. The evolution of electronic devices requires that graphene be adaptable to a 3D substrate. Here, we demonstrate that chemical-vapor-deposited single-layer graphene can be transferred onto a silicon dioxide substrate with a 3D geometry, such as a concave-convex architecture. A variety of silicon dioxide concave-convex architectures were uniformly and seamlessly laminated with graphene using a thermal treatment. The planar graphene was stretched to cover the concave-convex architecture, and the resulting strain on the curved graphene was spatially resolved by confocal Raman spectroscopy; molecular dynamic simulations were also conducted and supported the observations. Changes in electrical resistivity caused by the spatially varying strain induced as the graphene-silicon dioxide laminate varies dimensionally from 2D to 3D were measured by using a four-point probe. The resistivity measurements suggest that the electrical resistivity can be systematically controlled by the 3D geometry of the graphene-silicon dioxide laminate. This 3D graphene-insulator laminate will broaden the range of graphene applications beyond planar structures to 3D materials.

DEVICE TECHNOLOGY. Phase patterning for ohmic homojunction contact in MoTe2.

Artificial van der Waals heterostructures with two-dimensional (2D) atomic crystals are promising as an active channel or as a buffer contact layer for next-generation devices. However, genuine 2D heterostructure devices remain limited because of impurity-involved transfer process and metastable and inhomogeneous heterostructure formation. We used laser-induced phase patterning, a polymorph engineering, to fabricate an ohmic heterophase homojunction between semiconducting hexagonal (2H) and metallic monoclinic (1T') molybdenum ditelluride (MoTe2) that is stable up to 300°C and increases the carrier mobility of the MoTe2 transistor by a factor of about 50, while retaining a high on/off current ratio of 10(6). In situ scanning transmission electron microscopy results combined with theoretical calculations reveal that the Te vacancy triggers the local phase transition in MoTe2, achieving a true 2D device with an ohmic contact.

Selective catalytic burning of graphene by SiOx layer depletion.

We report catalytic decomposition of few-layer graphene on an Au/SiOx/Si surface wherein oxygen is supplied by dissociation of the native SiOx layer at a relatively low temperature of 400 °C. The detailed chemical evolution of the graphene covered SiOx/Si surface with and without gold during the catalytic process is investigated using a spatially resolved photoelectron emission method. The oxygen atoms from the native SiOx layer activate the gold-mediated catalytic decomposition of the entire graphene layer, resulting in the formation of direct contact between the Au and the Si substrate. The notably low contact resistivity found in this system suggests that the catalytic depletion of a SiOx layer could realize a new way to micromanufacture high-quality electrical contact.