Quantum Spin Hall States and Topological Phase Transition in Germanene.

We present the first experimental evidence of a topological phase transition in a monoelemental quantum spin Hall insulator. Particularly, we show that low-buckled epitaxial germanene is a quantum spin Hall insulator with a large bulk gap and robust metallic edges. Applying a critical perpendicular electric field closes the topological gap and makes germanene a Dirac semimetal. Increasing the electric field further results in the opening of a trivial gap and disappearance of the metallic edge states. This electric field-induced switching of the topological state and the sizable gap make germanene suitable for room-temperature topological field-effect transistors, which could revolutionize low-energy electronics.

Barrier Inhomogeneities in Atomic Contacts on WS2.

The down-scaling of electrical components requires a proper understanding of the physical mechanisms governing charge transport. Here, we have investigated atomic-scale contacts and their transport characteristics on WS2 using conductive atomic force microscopy (c-AFM). We demonstrate that c-AFM can provide true atomic resolution, revealing atom vacancies, adatoms, and periodic modulations arising from electronic effects. Moreover, we find a lateral variation of the surface conductivity that arises from the lattice periodicity of WS2. Three distinct sites are identified, i.e., atop, bridge, and hollow. The current transport across these atomic metal-semiconductor interfaces is understood by considering thermionic emission and Fowler-Nordheim tunnelling. Current modulations arising from point defects and the contact geometry promise a novel route for the direct control of atomic point contacts in diodes and devices.

Tuning the Friction of Graphene on Mica by Alcohol Intercalation.

The friction of graphene on mica was studied using lateral force microscopy. We observed that intercalation of alcohol molecules significantly increases the friction of graphene, as compared to water. An increase of 1.8, 2.4, and 5.9 times in friction between the atomic force microscopy tip and  single-layer graphene was observed for methanol, ethanol, and 2-propanol, respectively. Moreover, the friction of graphene is found to be higher for single-layer graphene than for multilayer graphene. We attribute the increase in friction to the additional vibrational modes of alcohol molecules. The significant variation of the frictional characteristics of graphene at the nanoscale by altering the intercalant could open up applications for the next-generation nanolubricants and nanodevices.

Charge Induced Dynamics of Water in a Graphene-Mica Slit Pore.

We use atomic force microscopy to in situ investigate the dynamic behavior of confined water at the interface between graphene and mica. The graphene is either uncharged, negatively charged, or positively charged. At high humidity, a third water layer will intercalate between graphene and mica. When graphene is negatively charged, the interface fills faster with a complete three layer water film, compared to uncharged graphene. As charged positively, the third water layer dewets the interface, either by evaporation into the ambient or by the formation of three-dimensional droplets under the graphene, on top of the bilayer. Our experimental findings reveal novel phenomena of water at the nanoscale, which are interesting from a fundamental point of view and demonstrate the direct control over the wetting properties of the graphene/water interface.

Electrochemically Induced Nanobubbles between Graphene and Mica.

We present a new method to create dynamic nanobubbles. The nanobubbles are created between graphene and mica by reducing intercalated water to hydrogen. The nanobubbles have a typical radius of several hundred nanometers, a height of a few tens of nanometers and an internal pressure in the range of 0.5-8 MPa. Our approach paves the way to the realization of nanobubbles of which both size and internal pressure are tunable.

Water-induced blister formation in a thin film polymer.

A failure mechanism of thin film polymers immersed in water is presented: the formation of blisters. The growth of blisters is counterintuitive as the substrates were noncorroding and the polymer does not swell in water. We identify osmosis as the driving force behind the blister formation. The dynamics of the blister formation is studied experimentally as well as theoretically, and a quantitative model describing the blister growth is developed, which accurately describes the temporal evolution of the blisters.

Latent heat induced rotation limited aggregation in 2D ice nanocrystals.

The basic science responsible for the fascinating shapes of ice crystals and snowflakes is still not understood. Insufficient knowledge of the interaction potentials and the lack of relevant experimental access to the growth process are to blame for this failure. Here, we study the growth of fractal nanostructures in a two-dimensional (2D) system, intercalated between mica and graphene. Based on our scanning tunneling spectroscopy data, we provide compelling evidence that these fractals are 2D ice. They grow while they are in material contact with the atmosphere at 20 °C and without significant thermal contact to the ambient. The growth is studied in situ, in real time and space at the nanoscale. We find that the growing 2D ice nanocrystals assume a fractal shape, which is conventionally attributed to Diffusion Limited Aggregation (DLA). However, DLA requires a low mass density mother phase, in contrast to the actual currently present high mass density mother phase. Latent heat effects and consequent transport of heat and molecules are found to be key ingredients for understanding the evolution of the snow (ice) flakes. We conclude that not the local availability of water molecules (DLA), but rather them having the locally required orientation is the key factor for incorporation into the 2D ice nanocrystal. In combination with the transport of latent heat, we attribute the evolution of fractal 2D ice nanocrystals to local temperature dependent rotation limited aggregation. The ice growth occurs under extreme supersaturation, i.e., the conditions closely resemble the natural ones for the growth of complex 2D snow (ice) flakes and we consider our findings crucial for solving the "perennial" snow (ice) flake enigma.

Impact of the TCO Microstructure on the Electronic Properties of Carbazole-Based Self-Assembled Monolayers.

Carbazole-based self-assembled monolayers (PACz-SAMs), anchored via their phosphonic acid group on a transparent conductive oxide (TCO), have demonstrated excellent performance as hole-selective layers in perovskite/silicon tandem solar cells. Yet, whereas different PACz-SAMs have been explored, the role of the TCO, and specifically its microstructure, on the hole transport properties of the TCO/PACz-SAMs stack has been largely overlooked. Here, we demonstrate that the TCO microstructure directly impacts the work function (WF) shift after SAM anchoring and is responsible for WF variations at the micro/nanoscale. Specifically, we studied Sn-doped In2O3 (ITO) substrates with amorphous and polycrystalline (featuring either nanoscale- or microscale-sized grains) microstructures before and after 2PACz-SAMs and NiOx/2PACz-SAMs anchoring. With this, we established a direct correlation between the ITO crystal grain orientation and 2PACz-SAMs local potential distribution, i.e., the WF. Importantly, these variations vanish for amorphous oxides (either in the form of amorphous ITO or when adding an amorphous NiOx buffer layer), where a homogeneous surface potential distribution is found. These findings highlight the importance of TCO microstructure tuning, to enable both high mobility and broadband transparent electrodes while ensuring uniform WF distribution upon application of hole transport SAMs, both critical for enhanced device performance.

Photoconductivity Enhancement in Atomically Thin Molybdenum Disulfide through Local Doping from Confined Water.

Two-dimensional transition metal dichalcogenide (TMDC) materials have shown great potential for usage in opto-electronic devices, especially down to the regime of a few layers to a single layer. However, at these limits, the material properties can be strongly influenced by the interfaces. By using photoconductive atomic force microscopy, we show a local enhancement of photoconductivity at the nanoscale in bilayer molybdenum disulfide on mica, where water is confined between the TMDC and the substrate. We have found that the structural phase of the water influences the doping level and thus the tunneling barrier at the nanojunction. This leads to an increase in photocurrent and enhanced photopower generation.

Charge Localization Induced by Pentagons on Ge(110).

The Ge(110) surface reconstructs into ordered and disordered phases, in which the basic unit is a five-membered ring of Ge atoms (pentagon). The variety of surface reconstructions leads to a rich electronic density of states with several surface states. Using scanning tunneling microscopy and spectroscopy, we have identified the exact origins of these surface states and linked them to either the Ge pentagons or the underlying Ge-Ge bonds. We show that even moderate fluctuations in the positions of the Ge pentagonal units induce large variations in the local density of states. The local density of states modulates in a precise manner, following the geometrical constraints on tiling Ge pentagons. These geometry-correlated electronic states offer a vast configurational landscape that could provide new opportunities in data storage and computing applications.

Unidirectional Nano-modulated Binding and Electron Scattering in Epitaxial Borophene.

A complex interplay between the crystal structure and the electron behavior within borophene renders this material an intriguing 2D system, with many of its electronic properties still undiscovered. Experimental insight into those properties is additionally hampered by the limited capabilities of the established synthesis methods, which, in turn, inhibits the realization of potential borophene applications. In this multimethod study, photoemission spectroscopies and scanning probe techniques complemented by theoretical calculations have been used to investigate the electronic characteristics of a high-coverage, single-layer borophene on the Ir(111) substrate. Our results show that the binding of borophene to Ir(111) exhibits pronounced one-dimensional modulation and transforms borophene into a nanograting. The scattering of photoelectrons from this structural grating gives rise to the replication of the electronic bands. In addition, the binding modulation is reflected in the chemical reactivity of borophene and gives rise to its inhomogeneous aging effect. Such aging is easily reset by dissolving boron atoms in iridium at high temperature, followed by their reassembly into a fresh atomically thin borophene mesh. Besides proving electron-grating capabilities of the boron monolayer, our data provide comprehensive insight into the electronic properties of epitaxial borophene which is vital for further examination of other boron systems of reduced dimensionality.

Strong Fermi-Level Pinning in GeS-Metal Nanocontacts.

Germanium sulfide (GeS) is a layered monochalcogenide semiconductor with a band gap of about 1.6 eV. To verify the suitability of GeS for field-effect-based device applications, a detailed understanding of the electronic transport mechanisms of GeS-metal junctions is required. In this work, we have used conductive atomic force microscopy (c-AFM) to study charge carrier injection in metal-GeS nanocontacts. Using contact current-voltage spectroscopy, we identified three dominant charge carrier injection mechanisms: thermionic emission, direct tunneling, and Fowler-Nordheim tunneling. In the forward-bias regime, thermionic emission is the dominating current injection mechanism, whereas in the reverse-bias regime, the current injection mechanism is quantum mechanical tunneling. Using tips of different materials (platinum, n-type-doped silicon, and highly doped p-type diamond), we found that the Schottky barrier is almost independent of the work function of the metallic tip, which is indicative of a strong Fermi-level pinning. This strong Fermi-level pinning is caused by charged defects and impurities.

Segregation-Enhanced Epitaxy of Borophene on Ir(111) by Thermal Decomposition of Borazine.

Like other 2D materials, the boron-based borophene exhibits interesting structural and electronic properties. While borophene is typically prepared by molecular beam epitaxy, we report here on an alternative way of synthesizing large single-phase borophene domains by segregation-enhanced epitaxy. X-ray photoelectron spectroscopy shows that borazine dosing at 1100 °C onto Ir(111) yields a boron-rich surface without traces of nitrogen. At high temperatures, the borazine thermally decomposes, nitrogen desorbs, and boron diffuses into the substrate. Using time-of-flight secondary ion mass spectrometry, we show that during cooldown the subsurface boron segregates back to the surface where it forms borophene. In this case, electron diffraction reveals a (6 × 2) reconstructed borophene χ6-polymorph, and scanning tunneling spectroscopy suggests a Dirac-like behavior. Studying the kinetics of borophene formation in low energy electron microscopy shows that surface steps are bunched during the borophene formation, resulting in elongated and extended borophene domains with exceptional structural order.

Tunneling current modulation in atomically precise graphene nanoribbon heterojunctions.

Lateral heterojunctions of atomically precise graphene nanoribbons (GNRs) hold promise for applications in nanotechnology, yet their charge transport and most of the spectroscopic properties have not been investigated. Here, we synthesize a monolayer of multiple aligned heterojunctions consisting of quasi-metallic and wide-bandgap GNRs, and report characterization by scanning tunneling microscopy, angle-resolved photoemission, Raman spectroscopy, and charge transport. Comprehensive transport measurements as a function of bias and gate voltages, channel length, and temperature reveal that charge transport is dictated by tunneling through the potential barriers formed by wide-bandgap GNR segments. The current-voltage characteristics are in agreement with calculations of tunneling conductance through asymmetric barriers. We fabricate a GNR heterojunctions based sensor and demonstrate greatly improved sensitivity to adsorbates compared to graphene based sensors. This is achieved via modulation of the GNR heterojunction tunneling barriers by adsorbates.

Cluster Superlattice Membranes.

Cluster superlattice membranes consist of a two-dimensional hexagonal lattice of similar-sized nanoclusters sandwiched between single-crystal graphene and an amorphous carbon matrix. The fabrication process involves three main steps, the templated self-organization of a metal cluster superlattice on epitaxial graphene on Ir(111), conformal embedding in an amorphous carbon matrix, and subsequent lift-off from the Ir(111) substrate. The mechanical stability provided by the carbon-graphene matrix makes the membrane stable as a free-standing material and enables transfer to other substrates. The fabrication procedure can be applied to a wide variety of cluster materials and cluster sizes from the single-atom limit to clusters of a few hundred atoms, as well as other two-dimensional layer/host matrix combinations. The versatility of the membrane composition, its mechanical stability, and the simplicity of the transfer procedure make cluster superlattice membranes a promising material in catalysis, magnetism, energy conversion, and optoelectronics.

Conformal Embedding of Cluster Superlattices with Carbon.

Iridium cluster superlattices on the graphene moiré with Ir(111) are embedded with elemental carbon through vapor-phase deposition. Using scanning tunneling microscopy and spectroscopy, we find that carbon embedding is conformal and does not deteriorate the excellent order of the iridium clusters. The thermal and mechanical stability of the embedded clusters is greatly enhanced. Smoluchowski ripening as well as cluster pick-up by the scanning tunneling microscopy tip are both suppressed. The only cluster decay path left takes place at an elevated temperature of around 1050 K. The cluster material penetrates through the graphene sheet, whereby it becomes bound to the underlying metal. It is argued that conformal carbon embedding is an important step towards the formation of a new type of sintering-resistant cluster lattice material for nanocatalysis and nanomagnetism.

Control of the metal/WS2 contact properties using 2-dimensional buffer layers.

Transition metal dichalcogenides (TMDC) have recently attracted much attention as a promising platform for the realization of 2-dimensional (2D) electronic devices. One of the major challenges for their wide-scale application is the control of the potential barrier at the metal/TMDC junction. Using conductive atomic force microscopy (c-AFM) we have investigated modifications of the Schottky barrier height (SBH) across a Pt/WS2 junction by the introduction of thin buffer layers of graphene and MoSe2. While graphene greatly reduces the contact resistance in both bias directions, thin layers of MoSe2 lower the Schottky barrier and leave the rectifying properties of the junction intact. We have studied the dependence of the transport properties on the thickness of the graphene and MoSe2 buffer layers. In both cases, the charge transport characteristics can be tailored by varying the buffer layer thickness. The edge of single layer graphene is observed to form an ohmic contact to the underlying WSe2 substrate. This study demonstrates that the introduction of atomically thin MoSe2 and graphene buffer layers is a feasible and elegant method to control the Schottky barrier when contacting TMDCs. The results are important for the fabrication of devices utilizing 2D materials.

Environmentally Controlled Charge Carrier Injection Mechanisms of Metal/WS2 Junctions.

Here we report on a novel, noninvasive route for operando tailoring of the charge transport properties of metal/WS2 contacts without the negative impacts to two-dimensional materials arising from conventional doping methods. The doping level of thin WS2 flakes supported on insulating mica is susceptible to local charge variations induced by the presence of a hydration layer between mica and WS2. We demonstrate, via the use of several complementary scanning probe techniques, that the direct control of the state and thickness of this intercalated water film controls the charge injection properties of Pt/WS2 nanocontacts. A switch from unipolar to ambipolar transport was achieved by environmentally controlling the thickness of the intercalated water. We show that the effect persists even for multilayer flakes and that it is completely reversible, opening a new route toward the realization of novel electronics with environmentally controllable functionalities.

Universal Fermi-Level Pinning in Transition-Metal Dichalcogenides.

Understanding the electron transport through transition-metal dichalcogenide (TMDC)-based semiconductor/metal junctions is vital for the realization of future TMDC-based (opto-)electronic devices. Despite the bonding in TMDCs being largely constrained within the layers, strong Fermi-level pinning (FLP) was observed in TMDC-based devices, reducing the tunability of the Schottky barrier height. We present evidence that metal-induced gap states (MIGS) are the origin for the large FLP similar to conventional semiconductors. A variety of TMDCs (MoSe2, WSe2, WS2, and MoTe2) were investigated using high-spatial-resolution surface characterization techniques, permitting us to distinguish between defected and pristine regions. The Schottky barrier heights on the pristine regions can be explained by MIGS, inducing partial FLP. The FLP strength is further enhanced by disorder-induced gap states induced by transition-metal vacancies or substitutionals at the defected regions. Our findings emphasize the importance of defects on the electron transport properties in TMDC-based devices and confirm the origin of FLP in TMDC-based metal/semiconductor junctions.

Self-assembly and wetting properties of gold nanorod-CTAB molecules on HOPG.

The formation of self-assembled superstructures of cetyltrimethylammonium bromide (CTAB) after drying on a nonwetting highly ordered pyrolytic graphite (HOPG) surface have been investigated using scanning electron microscopy (SEM) and atomic force microscopy (AFM). Although SEM did not reveal coverage of CTAB layers, AFM showed not only CTAB assembly, but also the dynamics of the process on the surface. The self-assembled layers of CTAB molecules on the HOPG terraces prior to nanorod deposition were shown to change the wettability of the surface, and as a result, gold nanorod deposition takes place on nonwetting HOPG terraces.