RESUMEN
We report on the fabrication of a 160×120 visible (Vis)-extended InGaAs/InP focal plane array (FPA) by means of the inductively coupled plasma etching. Compared to the conventional Vis-InGaAs FPAs, higher quantum efficiency in the Vis spectrum has been achieved. High precision thinning of the n-type InP contact layer down to 10 nm has led to quantum efficiencies higher than 60% over a broad wavelength range of 500-1700 nm. Benefiting from the textured surface after plasma etching, 17% lower reflectance over the entire response range was also found. Enhanced Vis/near-infrared (NIR) laboratory imaging capability has also been demonstrated, which has proved the feasibility of such processes for fabrication of future higher definition Vis/NIR InGaAs imagers.
RESUMEN
In this study, we have realized controllable fabrication of gold nanopatterns on pristine monolayer graphene by using nanosphere lithography, in which polystyrene (PS) spheres are used as templates. With this method, periodically ordered triangular Au nanopatterns are uniformly formed on graphene surface. Micro-Raman spectroscopy shows that these sacrificial PS templates have no obvious effect on graphene surface structure while the subsequently formed Au nanopatterns are found to enhance Raman intensity of G and 2D bands by surface plasmon resonance. The compressive stress introduced in the metal deposition process leads to an obvious blue shift of 2D band. Besides, the metal-induced doping effect reduces the intensity ratio between 2D and G bands. This uniform arrangement of metal nanostructure is expected to grow other nanomaterials or used as Raman enhancement substrate in biomedicine, catalyzer and optics areas.
RESUMEN
Two-dimensional heterojunctions exhibit many unique features in nanoelectronic and optoelectronic devices. However, heterojunction engineering requires a complicated alignment process and some defects are inevitably introduced during material preparation. In this work, a laser scanning technique is used to construct a lateral WSe2 p-n junction. The laser-scanned region shows p-type behavior, and the adjacent region is electrically n-doped with a proper gate voltage. The laser-oxidized product WOx is found to be responsible for this p-type doping. After laser scanning, WSe2 displays a change from ambipolar to unipolar p-type property. A significant photocurrent emerges at the p-n junction. Therefore, a self-powered WSe2 photodetector can be fabricated based on this junction, which presents a large photoswitching ratio of 106, a high photoresponsivity of 800 mA W-1, and a short photoresponse time with long-term stability and reproducibility. Therefore, this selective laser-doping method is prospective in future electronic applications.