High-Q two-dimensional perovskite topological laser.

Quasi-two-dimensional perovskites have attracted widespread interest in developing low-cost high-quality small lasers. The nano cavity based on topologically protected valley edge states can be robust against special defects. Here, we report a high-quality two-dimensional perovskite topological photonic crystal laser based on the quantum valley Hall effect. By adjusting the position of the air holes relative to the pillar, radiation leakage in topological edge states is reduced to a large extent, electric field distribution becomes more uniform and the quality factor can be as high as 3.6 × 104. Our findings could provide opportunities for the development of high-power, stable perovskite lasers with topological protection.

Imaging ultra-weak UV light below 100 pW cm-2 using a 4H-SiC photodetector with an Al2O3 interfacial layer.

Weak light detection is crucial in various practical applications such as night vision systems, flame monitoring, and underwater operations. Decreasing the dark current of a photodetector can effectively mitigate noises, consequently enhancing the signal-to-noise ratio and overall weak light detection performance. Herein, we demonstrate a 4H-SiC UV photodetector capable of detecting extremely weak UV light. This device comprises a photosensitive layer of 4H-SiC, two TiN electrodes and an atomically thin Al2O3 interfacial layer between TiN and the C surface of 4H-SiC. Under 360 nm UV light illumination, the proposed Al2O3 device demonstrates an ultra-low dark current of 18 fA, possibly benefiting from the effective passivation of interfacial carriers, and a boosted photo-to-dark current ratio of 6.7 × 107. Consequently, it achieves a weak-light detection limit as low as 31.8 pW cm-2, significantly outperforming the control device lacking Al2O3. When compared to previously reported SiC photodetectors, our Al2O3 device boasts an exceptional large linear dynamic range of 172 dB. Leveraging this, we construct a photodetector array capable of clearly imaging an object under ultra-weak light illumination below the 100 pW cm-2 level. The proposed photodetector represents a significant advancement in the development of highly sensitive image sensors for weak light detection.

Sunlight-Activated Orange Persistent Luminescence from Bi-Doped SrBaZn2Ga2O7 for Warm-Color Optical Applications.

A warm persistent luminescence (PersL) material SrBaZn2Ga2O7:Bi3+ was prepared using the conventional high-temperature solid-phase reaction method. We first investigated the PersL properties of SrBaZn2Ga2O7:Bi3+ in detail via PersL spectra, PersL excitation spectrum, PersL decay curves, and thermoluminescence (TL) spectra. The highlight of this study is that in addition to the 254 nm light source, the low-energy light source of 365 nm and sunlight can effectively excite electrons and charge traps, resulting in preferable orange PersL performance. The PersL decay time of the representative sample can last for 960 s after excitation by a 365 nm light source and 900 s after excitation by simulated sunlight. Meanwhile, the PersL color can be regulated by changing the excitation wavelength. In order to explain the infrequent PersL phenomena after different light source excitations, we recorded a series of TL spectra as a function of different light sources, different charging times, and different decay times to reveal the distribution of traps in the material and the influence of trap distribution on trapping and detrapping processes. This novel sunlight-activated orange PersL material is expected to promote the development of sunlight-activated PersL materials and expand potential applications in solar energy utilization and anticounterfeit marking.

Application of quantum dots in perovskite solar cells.

Perovskite solar cells (PSCs) are important candidates for next-generation thin-film photovoltaic technology due to their superior performance in energy harvesting. At present, their photoelectric conversion efficiencies (PCEs) are comparable to those of silicon-based solar cells. PSCs usually have a multi-layer structure. Therefore, they face the problem that the energy levels between adjacent layers often mismatch each other. Meanwhile, large numbers of defects are often introduced due to the solution preparation procedures. Furthermore, the perovskite is prone to degradation under ultraviolet (UV) irradiation. These problems could degrade the efficiency and stability of PSCs. In order to solve these problems, quantum dots (QDs), a kind of low-dimensional semiconductor material, have been recently introduced into PSCs as charge transport materials, interfacial modification materials, dopants and luminescent down-shifting materials. By these strategies, the energy alignment and interfacial conditions are improved, the defects are efficiently passivated, and the instability of perovskite under UV irradiation is suppressed. So the device efficiency and stability are both improved. In this paper, we overview the recent progress of QDs' utilizations in PSCs.

Interface modification of an electron transport layer using europium acetate for enhancing the performance of P3HT-based inorganic perovskite solar cells.

In recent years, although the power conversion efficiency (PCE) of thermally stable all-inorganic CsPbI3 perovskite solar cells (PSCs) had shown a great progress, the most reported CsPbI3 PSCs suffered from the large open-circuit voltage (Voc) loss, which is related to severe nonradiative recombination and a mismatch in energy level at the transport layer/perovskite interface. In this work, europium acetate (EuAc3) as a multifunction interface material is chosen to modify the TiO2/perovskite interface, the crystal quality of CsPbI3 perovskite films is improved, and both bulk and interfacial defects are reduced effectively. Meanwhile, the energy levels arrangement between TiO2 and CsPbI3 perovskites is also optimized, corresponding the raised built-in electric field afford a strength force to accelerate the transport and extraction of charge carriers from CsPbI3 perovskites to TiO2. As a result, the performance of CsPbI3 PSCs is largely enhanced with the PCE of 16.76%. When an Ag electrode was replaced by Au, the PCE further improves to 17.92%, which is the highest for CsPbI3 PSCs with P3HT as the HTL ever reported. Besides, the CsPbI3 PSC with the EuAc3 modification layer maintains 84% of the initial PCE under continuous UV irradiation for 250 h in a nitrogen filled glovebox, being obviously higher than the control devices with only 40% of the initial PCE after UV irradiation for 100 h in the same environment.

High performance flexible organic photomultiplication photodetector based on an ultra-thin silver film transparent electrode.

Flexible and lightweight photomultiplication-type organic photodetectors (PM-OPDs) have attracted wide attention for their broad application prospects, especially in the field of wearable electronic products. However, the commonly used indium tin oxide (ITO) conductive anode is not conducive to realize high-performance flexible PM-OPDs due to its rigidity and fragility. Here, on the flexible polyethylene terephthalate (PET) substrate, we successfully fabricate highly sensitive poly 3-hexylthiophene:phenyl-C70-butyric acid methyl ester (P3HT:PC70BM, 100:1) based PM-OPDs using ultra-thin silver films as transparent anodes. Specifically, a 1 nm thick MoO3 layer is utilized as the wetting layer for facilitating the silver film percolation, and a 2 nm thick MoO3 layer, as the hole transport layer, is coated on top of the ultra-thin silver film before coating the P3HT:PC70BM film. The as-prepared flexible PM-OPDs based on the ultra-thin silver film exhibit the optimal external quantum efficiency (EQE) and responsivity (R) of 1.3 × 105% and 388.4 A W-1, respectively, under -15 V bias, which are 1.98 times and 2.15 times greater than those of the ITO anode based device. More importantly, the device has good flexibility with the EQE maintaining 70.6% of its initial value after bending 10 times, and 51.4% of its initial value after bending 1000 times. This work paves the way for developing flexible PM-OPDs as well as other flexible optoelectronic devices.

Broadband and wide-angle light absorption of organic solar cells based on multiple-depths metal grating.

A silver grating containing three grooves with different depths in one period was proposed as the back electrode for improving light absorption in organic solar cells. We found that the broadband absorption enhancement of the active layer covering the visible and near-infrared bands can be obtained due to the excitation of surface plasmon resonance and the multiple resonances of cavity mode. The integrated absorption efficiency of the proposed structure under TM polarization between 350 nm to 900 nm is 57.4%, with consideration of the weight of AM 1.5G solar spectrum, and is increased by 13.4% with respect to the equivalent planar device. Besides, the wide-angle absorption in proposed structure can be observed in the range from 0 to 50 degrees. These findings are of great importance for rationally designing composite nanostructures of metal gratings-based absorbers for sensing and photon-detecting applications.

Effective medium analysis of absorption enhancement in short-pitch metal grating incorporated organic solar cells.

The effective medium theory is applied to analyze the absorption enhancement in organic solar cells with a short-pitch metal grating. A 37% improvement in the absorption of the active layer is achieved with respect to that of a planar control cell. It is inspired that the propagating surface plasmon modes are excited at the interface between the effective medium layer and the flat metal plate, resulting in a reduction of light reflection. In real structure, the electric field redistributes with its intensity in the region with active materials infiltrated in the grooves increases significantly, exhibiting like hot spots to assist in achieving broadband absorption enhancement. Moreover, the localized surface plasmon resonances excited at the top of the metal ridges also contribute to the absorption enhancement in the cells.

Visibly transparent organic photovoltaic with improved transparency and absorption based on tandem photonic crystal for greenhouse application.

We demonstrate a visible transparent organic photovoltaic (OPV) with improved transmission and absorption based on tandem photonic crystals (TPCs) for greenhouse applications. The proposed device has an average transmittance of 40.3% in the visible range of 400-700 nm and a high quality transparency spectrum for plant growth with a crop growth factor of 41.9%, considering the weight of the AM 1.5G solar spectrum. Compared with the corresponding transparent OPV without photonic crystals, an enhancement of 20.7% in the average transmittance and of 24.5% in the crop growth factor are achieved. Detailed investigations reveal that the improved transmittance is attributed to the excitation of the optical Tamm state and the light interference effect in TPC. Concomitantly, the total absorption efficiency in the active layer of the designed TPC based transparent OPV reaches 51.5%, being 1.78% higher than that of the transparent OPV without PC and 76% of that of the opaque counterpart. The improved absorption originates from the Bragg forbidden reflectance of TPC. Overall, our proposal achieves the optimized utilization of sunlight by light manipulation of TPC.

High-efficiency, broad-band and wide-angle optical absorption in ultra-thin organic photovoltaic devices.

Metal nanogratings as one of the promising architectures for effective light trapping in organic photovoltaics (OPVs) have been actively studied over the past decade. Here we designed a novel metal nanowall grating with ultra-small period and ultra-high aspect-ratio as the back electrode of the OPV device. Such grating results in the strong hot spot effect in-between the neighboring nanowalls and the localized surface plasmon effect at the corners of nanowalls. These combined effects make the integrated absorption efficiency of light over the wavelength range from 400 to 650 nm in the active layer for the proposed structure, with respect to the equivalent planar structure, increases by 102% at TM polarization and by 36.5% at the TM/TE hybrid polarization, respectively. Moreover, it is noted that the hot spot effect in the proposed structure is more effective for ultra-thin active layers, which is very favorable for the exciton dissociation and charge collection. Therefore such a nanowall grating is expected to improve the overall performance of OPV devices.

High-efficiency, broad-band and wide-angle optical absorption in ultra-thin organic photovoltaic devices.

Metal nanogratings as one of the promising architectures for effective light trapping in organic photovoltaics (OPVs) have been actively studied over the past decade. Here we designed a novel metal nanowall grating with ultra-small period and ultra-high aspect-ratio as the back electrode of the OPV device. Such grating results in the strong hot spot effect in-between the neighboring nanowalls and the localized surface plasmon effect at the corners of nanowalls. These combined effects make the integrated absorption efficiency of light over the wavelength range from 400 to 650 nm in the active layer for the proposed structure, with respect to the equivalent planar structure, increases by 102% at TM polarization and by 36.5% at the TM/TE hybrid polarization, respectively. Moreover, it is noted that the hot spot effect in the proposed structure is more effective for ultra-thin active layers, which is very favorable for the exciton dissociation and charge collection. Therefore such a nanowall grating is expected to improve the overall performance of OPV devices.

Efficient multiband absorber based on one-dimensional periodic metal-dielectric photonic crystal with a reflective substrate.

We propose an efficient multiband absorber comprised of a truncated, one-dimensional periodic metal-dielectric photonic crystal and a reflective substrate. The reflective substrate is essentially an optically thick metallic film. Such a planar device is easier to fabricate compared to absorbers with complicated shapes. For a four-unit cell device, all four of the absorption peaks can be optimized with efficiencies higher than 95 percent. Moreover, those absorption peaks are insensitive to the polarization and incident angle. The influences of the geometrical parameters and the refractive index of the dielectric on the device performance also are discussed. Furthermore, we found that the number of absorption peaks within each photonic band precisely corresponds to the number of unit cells because the truncated photonic crystal lattices select resonant modes. We also show that the total absorption efficiency gradually increases when there are more periods of the metal-dielectric composite layer placed on top of the metallic substrate. We expect this work to have potential applications in solar energy harvesting and thermal emission tailoring.

Detecting Visible to Near-Infrared II Light via CsPbBr3 Nanocrystals/Y6 Heterojunctions.

In the endeavor to develop advanced photodetectors (PDs) with superior performance, all-inorganic perovskites, recognized for their outstanding photoelectric properties, have emerged as highly promising materials. Due to their unique electronic structure and band characteristics, the majority of all-inorganic perovskite materials are not sensitive to near-infrared (NIR) light. Here, we demonstrate the fabrication of a high-performance broadband PD comprising CsPbBr3 perovskite NCs/Y6 planar heterojunctions. The incorporation of Y6 not only facilitates charge transfer from CsPbBr3 NCs to Y6 for enhancing photodetection performance under visible illumination but also broadens the absorption spectrum range of the whole device toward the NIR regime. As a result, the heterojunction PD exhibits a photo-to-dark-current ratio above 105, a dynamic range of 149.5 dB, and an impressive lowest detection limit of incident power density of 1.6 nW/cm2 under 505 nm illumination. In the NIR regime, where photon energy is below the bandgap of CsPbBr3, electron-hole pairs can still be produced in the Y6 layer even when illuminated at 1120 nm. Consequently, photodetection is uniquely possible in PDs that incorporate heterojunctions when the illumination wavelength is longer than 565 nm. At 850 nm, the heterojunction device is capable of detecting light with power densities as low as 1.3 µW/cm2 corresponding to a LDR of 99.8 dB. The exceptional performance is attributed to the creation of a heterojunction between CsPbBr3 NCs and Y6. These findings propose a novel approach for developing broadband PDs based on perovskite NC materials.

High-Quality Solution-Processed Quasi-2D Perovskite for Low-Threshold Lasers.

Spin-coated quasi-two-dimensional halide perovskite films, which exhibit superior optoelectronic properties and environmental stability, have recently been extensively studied for lasers. Crystallinity is of great importance for the laser performance. Although some parameters related to the spin-coating process have been studied, the in-depth understanding and effective control of the acceleration rate on two-dimensional perovskite crystallization during spin-coating are still unknown. Here we investigate the effect of solvent evaporation on the microstructure of the final perovskite films during the spin-coating process. The crystallization quality of the film can be significantly improved by controlling solvent evaporation. As a result, the prepared quasi-2D perovskite film exhibits a stimulated emission threshold (pump: 343 nm, 6 kHz, 290 fs) of 550 nm as low as 16.2 µJ/cm2. Transient absorption characterization shows that the radiative biexciton recombination time is reduced from 738.5 to 438.3 ps, benefiting from the improved crystallinity. The faster biexciton recombination significantly enhanced the photoluminescence efficiency, which is critical for population inversion. This work could contribute to the development of low-threshold lasers.

Photorefractive inhibition of second harmonic generation in periodically poled MgO doped LiNbO3 waveguide.

The inhibition of high power second-harmonic generation (SHG) in a periodically poled MgO doped LiNbO3 (PPMgLN) waveguide operating at near the room temperature has been interpreted by systematically investigating the SHG process based on the coupled mode equations in combination with the photorefraction and the temperature nonuniformities. The simulation results show that significant refractive index nonuniformities are induced by the photorefractive effect along the irradiated zone while those induced by the thermal effect are very minor. Therefore, the photorefractive effect instead of the thermal effect is the main factor that inhibits the SHG conversion efficiency. In addition, comparison of PPMgLN waveguides with different transverse dimensions shows that the waveguides with larger transverse dimension is advantageous in high power SHG since the photorefractive effect is weaker.

Improving working lifetime and efficiency of phosphor doped organic light-emitting diodes.

Long working lifetime and high efficient phosphorescent organic light-emitting diode (PHOLED) in which mixed host composed of wide-band-gap based 4, 7-diphenyl-1, 10-phenanthroline (Bphen) and (4,4'-bis(carbazol-9-yl)-biphenyl) (CBP) was demonstrated. The PHOLED with structure of ITO/MoO(3)/CBP:MoO(3) (15 v%, 30 nm)/CBP(10 nm)/([50v%:50v% CBP:Bphen]: 6v% Ir(ppy)(3))(30 nm)/Bphen (40 nm)/LiF (1 nm)/Al offers a peak power efficiency of 41.6 lm/W (a peak current efficiency of 39.8 cd/A)) at a low driving voltage of 3 V which increases by 55% and 27% compared to that of corresponding single-host (SH) and double emitting layer (DML) devices, respectively. Especially very long work lifetime (3530 hs) at an initial luminance of 500 cd/m(2) of the mixed hosted device is exhibited, rising by about 4.1 and 2.46 times relative to that of corresponding SH and DML devices. High efficiency and longer working lifetime was attributed to the absence of heterojunction and balanced charge carrier transport characteristics in the mixed host based OLED structure. The more detail mechanism was also presented.

Ultrabroadband light absorption by a sawtooth anisotropic metamaterial slab.

We present an ultrabroadband thin-film infrared absorber made of sawtoothed anisotropic metamaterial. Absorptivity of higher than 95% at normal incidence is supported in a wide range of frequencies, where the full absorption width at half-maximum is about 86%. Such property is retained well at a very wide range of incident angles too. Light of shorter wavelengths are harvested at upper parts of the sawteeth of smaller widths, while light of longer wavelengths are trapped at lower parts of larger tooth widths. This phenomenon is explained by the slowlight modes in anisotropic metamaterial waveguide. Our study can be applied in the field of designing photovoltaic devices and thermal emitters.

Localized Bound Multiexcitons in Engineered Quasi-2D Perovskites Grains at Room Temperature for Efficient Lasers.

Reducing the excitation threshold to minimize the Joule heating is critical for the realization of perovskite laser diodes. Although bound excitons are promising for low threshold laser, how to generate them at room temperature for laser applications is still unclear in quasi-2D perovskite-based devices. In this work, via engineering quasi-2D perovskite PEA2 (CH3 NH3 )n -1 Pbn Br3 n +1 microscopic grains by the anti-solvent method, room-temperature multiexciton radiative recombination is successfully demonstrated at a remarkably low pump density of 0.97 µJ cm-2 , which is only one-fourth of that required in 2D CdSe nanosheets. In addition, the well-defined translational momentum in quasi-2D perovskite grains can restrict the Auger recombination which is detrimental to radiative emission. Furthermore, the quasi-2D perovskite grains are favorable for increasing binding energies of excitons and biexcitons and so as the related radiative recombination. Consequently, the prepared phase quasi-2D perovskite film renders a threshold of room-temperature stimulated emission as low as 13.7 µJ cm-2 , reduced by 58.6% relative to the amorphous counterpart with larger grains. The findings in this work are expected to facilitate the development of solution-processable perovskite multiexcitonic laser diodes.

Atomic-level chemical reaction promoting external quantum efficiency of organic photomultiplication photodetector exceeding 108% for weak-light detection.

Low-cost, solution-processed photomultiplication organic photodetectors (PM-OPDs) with external quantum efficiency (EQE) above unity have attracted enormous attention. However, their weak-light detection is unpleasant because the anode Ohmic contact causes exacerbation in dark current. Here, we introduce atomic-level chemical reaction in PM-OPDs which can simultaneously suppress dark current and increase EQE via depositing a 0.8 nm thick Al2O3 by the atomic layer deposition. Suppression in dark current mainly originates from the built-in anode Schottky junction as a result of work function decrease of hole-transporting layer of which the chemical groups can react chemically with the bottom surface of Al2O3 layer at the atomic-level. Such strategy of suppressing dark current is not adverse to charge injection under illumination; instead, responsivity enhancement is realized because charge injection can shift from cathode to anode, of which the neighborhood possesses increased photogenerated carriers. Consequently, weak-light detection limit of the forwardly-biased PM-OPD with Al2O3 treatment reaches a remarkable level of 2.5 nW cm-2, while that of the reversely-biased control is 25 times inferior. Meanwhile, the PM-OPD yields a record high EQE and responsivity of 4.31 × 108% and 1.85 × 106 A W-1, respectively, outperforming all other polymer-based PM-OPDs.

Multiband plasmonic absorber based on transverse phase resonances.

We demonstrate a multiband plasmonic absorber based on transverse phase resonances. We show that the modification of conventional metallic surfaces of T-shape grooves can cause mode splitting of the plasmonic waveguide cavity modes due to lattice scattering and all the new resonant modes exhibit large absorbtivity greater than 90%. Some of the generated absorption peaks have wide-angle characteristics. Furthermore, we find that the proposed structure is fairly insensitive to the alignment error between different layers.