Light-In-Flight Imaging by a Silicon Image Sensor: Toward the Theoretical Highest Frame Rate.

Light in flight was captured by a single shot of a newly developed backside-illuminated multi-collection-gate image sensor at a frame interval of 10 ns without high-speed gating devices such as a streak camera or post data processes. This paper reports the achievement and further evolution of the image sensor toward the theoretical temporal resolution limit of 11.1 ps derived by the authors. The theoretical analysis revealed the conditions to minimize the temporal resolution. Simulations show that the image sensor designed following the specified conditions and fabricated by existing technology will achieve a frame interval of 50 ps. The sensor, 200 times faster than our latest sensor will innovate advanced analytical apparatuses using time-of-flight or lifetime measurements, such as imaging TOF-MS, FLIM, pulse neutron tomography, PET, LIDAR, and more, beyond these known applications.

Novel technology for microlenses for imaging applications.

Microlenses are an important functional element of a modern imaging device. Typically, they are fabricated from organic materials on top of individual pixels. Though they are widely used, they do exhibit a number of limitations. These are, but not limited to, thermal stability, radiation sensitivity, outgassing properties, additional topography, and difficulty in manufacturing asymmetrical, noncircular microlens designs using conventional manufacturing techniques. In this paper, we present a novel approach for the fabrication of microlenses. We report on the design, manufacturing, and characterization of microlenses fabricated from classical dielectric materials used in the manufacturing of CMOS semiconductor devices. These microlenses rely on a Fresnel optical design, provide functionality similar to the classical microlenses, and do not suffer from their limitations. We subjected these microlenses to several environmental reliability stress conditions, including pressure, temperature, humidity, and their variation. Moreover, we test their sensitivity to gamma rays and protons.

An Image Signal Accumulation Multi-Collection-Gate Image Sensor Operating at 25 Mfps with 32 × 32 Pixels and 1220 In-Pixel Frame Memory.

The paper presents an ultra-high-speed image sensor for motion pictures of reproducible events emitting very weak light. The sensor is backside-illuminated. Each pixel is equipped with multiple collection gates (MCG) at the center of the front side. Each collection gate is connected to an in-pixel large memory unit, which can accumulate image signals captured by repetitive imaging. The combination of the backside illumination, image signal accumulation, and slow readout from the in-pixel signal storage after an image capturing operation offers a very high sensitivity. Pipeline signal transfer from the the multiple collection gates (MCG) to the in-pixel memory units enables the sensor to achieve a large frame count and a very high frame rate at the same time. A test sensor was fabricated with a pixel count of 32 × 32 pixels. Each pixel is equipped with four collection gates, each connected to a memory unit with 305 elements; thus, with a total frame count of 1220 (305 × 4) frames. The test camera achieved 25 Mfps, while the sensor was designed to operate at 50 Mfps.

Thin-Film Quantum Dot Photodiode for Monolithic Infrared Image Sensors.

Imaging in the infrared wavelength range has been fundamental in scientific, military and surveillance applications. Currently, it is a crucial enabler of new industries such as autonomous mobility (for obstacle detection), augmented reality (for eye tracking) and biometrics. Ubiquitous deployment of infrared cameras (on a scale similar to visible cameras) is however prevented by high manufacturing cost and low resolution related to the need of using image sensors based on flip-chip hybridization. One way to enable monolithic integration is by replacing expensive, small-scale III-V-based detector chips with narrow bandgap thin-films compatible with 8- and 12-inch full-wafer processing. This work describes a CMOS-compatible pixel stack based on lead sulfide quantum dots (PbS QD) with tunable absorption peak. Photodiode with a 150-nm thick absorber in an inverted architecture shows dark current of 10-6 A/cm² at -2 V reverse bias and EQE above 20% at 1440 nm wavelength. Optical modeling for top illumination architecture can improve the contact transparency to 70%. Additional cooling (193 K) can improve the sensitivity to 60 dB. This stack can be integrated on a CMOS ROIC, enabling order-of-magnitude cost reduction for infrared sensors.

Hydrodynamic chromatography separations in micro- and nanopillar arrays produced using deep-UV lithography.

We report on a series of hydrodynamic chromatography separations conducted in micropillar array columns with an interpillar distance spacing of, respectively, 1.00, 0.70, and 0.47 µm. The columns have been produced using state-of-the-art deep-UV lithography and deep reactive ion etching techniques. Despite the fact that the efficiency was smaller than theoretically possible (due to fabrication limitations and significant injection and detection band broadening), it was nevertheless possible to separate mixtures of fluorescein isothiocyanate (used as the t(0) -marker) and 20- and 40-nm polystyrene beads. With the smallest interpillar distance, a resolution of R(s) = 0.5 between the 20- and 40-nm particles could be obtained in 90s over a column length of 4 cm. The selectivity obtained in the pillar array columns was found to be very similar to that observed in packed-bed columns. By detecting the fluorescent signals in a 90-µm-deep detection groove at the end of the column, the signal-to-noise ratio could be enhanced up to 150 times.

Impact of the limitations of state-of-the-art micro-fabrication processes on the performance of pillar array columns for liquid chromatography.

We report on the practical limitations of the current state-of-the-art in micro-fabrication technology to produce the small pillar sizes that are needed to obtain high efficiency pillar array columns. For this purpose, nine channels with a different pillar diameter, ranging from 5 to 0.5 µm were fabricated using state-of the-art deep-UV lithography and deep reactive ion etching (DRIE) etching technology. The obtained results strongly deviated from the theoretically expected trend, wherein the minimal plate height (H(min)) would reduce linearly with the pillar diameter. The minimal plate height decreases from 1.7 to 1.2 µm when going from 4.80 to 3.81 µm diameter pillars, but as the dimensions are further reduced, the minimal plate heights rise again to values around 2 µm. The smallest pillar diameter even produced the worst minimal plate height (4 µm). An in-depth scanning electron microscopy (SEM) inspection of the different channels clearly reveals that these findings can be attributed to the micro-fabrication limitations that are inevitably encountered when exploring the limits of deep-UV lithography and DRIE etching processes. When the target dimensions of the design approach the etching resolution limits, the band broadening increases in a strongly non-linear way with the decreased pillar dimensions. This highly non-linear relationship can be understood from first principles: when the machining error is of the order of 100-200 nm and when the target design size for the inter-pillar distance is of the order of 250 nm, this inevitably leads to pores that will range in size between 50 and 450 nm that we want to highlight with our paper highly non-linear relationship. This highly non-linear relationship can be understood from first principles: when the machining error is of the order of 100-200 nm and when the target design size for the inter-pillar distance is of the order of 250 nm, this inevitably leads to pores that will range in size between 50 and 450 nm.