Multi-grayscale driving system for passive-matrix alternating current electroluminescence display.

Alternating current electroluminescence (ACEL) has great potential in flexible displays, especially in textile displays. However, since ACEL needs high-frequency, high-voltage AC signal to drive, there remains no driving scheme for pixelated ACEL display to achieve multiple gray scales. In this work, a driving scheme based on full-bridge inverters is proposed for passive-matrix ACEL (PMACEL) display, which achieves multiple gray scales by changing the duty cycle of the square wave. A single-pixel ACEL displaying 16 gray levels (4 bits) and a 5 × 8 fabric PMACEL displaying eight gray levels are demonstrated, enabling flexible ACEL devices to exhibit more vivid tones on a fabric substrate.

High-Performance Planar Field-Emission Photodetector of Monolayer Tungsten Disulfide with Microtips.

Monolayer tungsten disulfide (ML WS2 ) is believed as an ideal photosensitive material due to its small direct bandgap, large exciton/trion binding energy, high carrier mobility, and considerable quantum conversion efficiency. Compared with other photosensitive devices, planar field emission (FE)-type photodetectors with a full-plane structure should simultaneously have rapider switching speed and lower power consumption. In this work, ML WS2 microtips are fabricated by electron beam lithography (EBL) way and used to construct a planar FE-type photodetector. By optimization design, ML WS2 with three microtips can exhibit the maximum current density as high as  52 A cm-2 (@300 V µm-1 ), and the largest photoresponsivity is up to 6.8 × 105 A W-1 under green light irradiation, superior to that of many other ML transition metal dichalcogenide (TMDC) detectors. More interestingly, ML WS2 devices with microtips can effectively solve the contradictory problem between large photoresponsivity and rapid switching speed. The excellent photoresponse performances of ML WS2 with microtips should be attributed to their high carrier mobility, sharp emission edge, ultrahigh quantum yield, and unique planar FE device structure. Our research may shed new light on exploring the fabrication technology and photosensitive mechanism of two dimensional (2D) material-based planar FE photodetectors.

High-Quality All-Inorganic Perovskite CsPbBr3 Microsheet Crystals as Low-Loss Subwavelength Exciton-Polariton Waveguides.

Nanostructured all-inorganic metal halide perovskites have attracted considerable attention due to their outstanding photonic and optoelectronic properties. Particularly, they can exhibit room-temperature exciton-polaritons (EPs) capable of confining electromagnetic fields down to the subwavelength scale, enabling efficient light harvesting and guiding. However, a real-space nanoimaging study of the EPs in perovskite crystals is still absent. Additionally, few studies focused on the ambient-pressure and reliable fabrication of large-area CsPbBr3 microsheets. Here, CsPbBr3 orthorhombic microsheet single crystals were successfully synthesized under ambient pressure. Their EPs were examined using a real-space nanoimaging technique, which reveal EP waveguide modes spanning the visible to near-infrared spectral region. The EPs exhibit a sufficient long propagation length of over 16 µm and a very low propagation loss of less than 0.072 dB·µm-1. These results demonstrate the potential applications of CsPbBr3 microsheets as subwavelength waveguides in integrated optics.

Phonon Polaritons in Twisted Double-Layers of Hyperbolic van der Waals Crystals.

Controlling the twist angle between two stacked van der Waals (vdW) crystals is a powerful approach for tuning their electronic and photonic properties. Hyperbolic media have recently attracted much attention due to their ability to tailor electromagnetic waves at the subwavelength-scale which, however, usually requires complex patterning procedures. Here, we demonstrate a lithography-free approach for manipulating the hyperbolicity by harnessing the twist-dependent coupling of phonon polaritons in double-layers of vdW α-MoO3, a naturally biaxial hyperbolic crystal. The polariton isofrequency contours can be modified due to this interlayer coupling, allowing for controlling the polaritonic characteristics by adjusting the orientation angles between the two layers. Our findings provide opportunities for control of nanoscale light flow with twisted stacks of vdW crystals.

Non-uniaxial stress-assisted fabrication of nanoconstriction on vertical nanostructured Si.

Vertically aligned Si nanoconstrictions have potential for applications of electronic, photonic and phononic nanodevices. Herein, we report a featured method by utilizing the non-uniaxial tangential tension stress (σ T ) at the Si surface of a vertical hyperbolic Si/SiO2 core-shell nanostructure during thermal oxidation to achieve well defined Si nanoconstrictions. A thermal oxidation model was proposed to describe the correlations between σ T and the structural parameters of the hyperbolic nanostructure, i.e. oxide thickness (t ox ), sidewall curvature radius (R 0) and neck diameter (2r A0). Numerical simulations indicated that the Si surface at the position with the narrowest diameter (neck position) has the highest σ T (∼GPa) and presents a gradient distribution at both ends. By means of stress regulation, an array of well defined Si nanoconstrictions about 10 nm in diameter and about 34 nm in length was obtained. The experimental findings demonstrated that the high σ T would induce a nanofracture and thus a local oxidation to form a nanoconstriction, self-aligned at the neck position. The finding notably extends the capability of stress-assisted 'nanofabrication' of Si via thermal oxidation.

An in situ characterization technique for electron emission behavior under a photo-electric-common-excitation field: study on the vertical few-layer graphene individuals.

The in situ characterization on the individuals offers an effective way to explore the dynamic behaviors and underlying physics of materials at the nanoscale, and this is of benefit for actual applications. In the field of vacuum micro-nano electronics, the existing in situ techniques can obtain the material information such as structure, morphology and composition in the process of electron emission driven by a single source of excitation. However, the relevant process and mechanism become more complicated when two or more excitation sources are commonly acted on the emitters. In this paper, we present an in situ nano characterization technique to trigger and record the electron emission behavior under the photo-electric-common-excitation multiple physical fields. Specifically, we probed into the in situ electron emission from an individual vertical few-layer graphene (vFLG) emitter under a laser-plus-electrostatic driving field. Electrons were driven out from the vFLG's emission edge, operated in situ under an external electrostatic field coupled with a 785 nm continuous-wave laser-triggered optical field. The incident light has been demonstrated to significantly improve the electron emission properties of graphene, which were recorded as an obvious decrease of the turn-on voltage, a higher emission current by factor of 35, as well as a photo-response on-off ratio as high as 5. More importantly, during their actual electron emission process, a series of in situ characterizations such as SEM observation and Raman spectra were used to study the structure, composition and even real-time Raman frequency changes of the emitters. These information can further reveal the key factors for the electron emission properties, such as field enhancement, work function and real-time surface temperature. Thereafter, the emission mechanism of vFLG in this study has been semi-quantitatively demonstrated to be the two concurrent processes of photon-assisted thermal enhanced field emission and photo field emission.

1T' Transition Metal Telluride Atomic Layers for Plasmon-Free SERS at Femtomolar Levels.

Plasmon-free surface enhanced Raman scattering (SERS) based on the chemical mechanism (CM) is drawing great attention due to its capability for controllable molecular detection. However, in comparison to the conventional noble-metal-based SERS technique driven by plasmonic electromagnetic mechanism (EM), the low sensitivity in the CM-based SERS is the dominant barrier toward its practical applications. Herein, we demonstrate the 1T' transition metal telluride atomic layers (WTe2 and MoTe2) as ultrasensitive platforms for CM-based SERS. The SERS sensitivities of analyte dyes on 1T'-W(Mo)Te2 reach EM-comparable ones and become even greater when it is integrated with a Bragg reflector. In addition, the dye fluorescence signals are efficiently quenched, making the SERS spectra more distinguishable. As a proof of concept, the SERS signals of analyte Rhodamine 6G (R6G) are detectable even with an ultralow concentration of 40 (400) fM on pristine 1T'-W(Mo)Te2, and the corresponding Raman enhancement factor (EF) reaches 1.8 × 109 (1.6 × 108). The limit concentration of detection and the EF of R6G can be further enhanced into 4 (40) fM and 4.4 × 1010 (6.2 × 109), respectively, when 1T'-W(Mo)Te2 is integrated on the Bragg reflector. The strong interaction between the analyte and 1T'-W(Mo)Te2 and the abundant density of states near the Fermi level of the semimetal 1T'-W(Mo)Te2 in combination gives rise to the promising SERS effects by promoting the charge transfer resonance in the analyte-telluride complex.

Tetragonal Single-Crystalline Boron Nanowires with Strong Anisotropic Light Scattering Behaviors and Photocurrent Response in Visible-Light Regime.

Boron is a narrow-bandgap (1.56 eV) semiconductor with high melting-point, low-density, large Young's modulus and very high refractive index (3.03) close to silicon. Therefore, boron nanostructures is expected to possess strong visible-light scattering properties. However, photonic and optoelectronic properties of the boron nanostructures are seldom studied until now. In this paper, we have successfully prepared single-crystalline boron nanowire (BNW) arrays with high-density on Si substrate. All the BNWs are found to possess strong light-scattering behaviors in the visible regime. Most of all, the scattered light is found to polarize along the longitudinal direction of the nanowire. They also have excellent second-harmonic generation (SHG) properties under ultrafast laser irradiation. Further optoelectronic measurements show that an individual BNW device exhibits notable photocurrent responses in the visible-light range at ambient conditions, which can be attributed to the strong coupling effect between individual BNW and the visible light. The maximum photoresponsivity of an individual BNW can reach up to 12.12 A W-1 at a voltage of 10 V, and the response time is only 18 ms. Therefore, it unveils that the BNWs have a promising future in visible-light communications and detections.

Improved field emission properties of α-Fe2O3 nanoflakes with current aging treatment and morphology optimization.

α-Fe2O3 nanomaterials were synthesized by thermal oxidation of pure iron foil and the effects of current aging treatment and morphology on their field emission properties were systematically investigated. The current aging treatment was found to be an efficient method to improve the field emission properties of α-Fe2O3 nanoflakes. The emission current density was largely enhanced from 0.05-5.70 mA cm-2 under an applied electrical field of 7.8 MV m-1, and their threshold field decreased from than 11.0-6.6 MV m-1 after the current aging treatment. The mechanism of the improvement in the field emission performance of α-Fe2O3 nanoflakes induced by the current aging treatment is discussed. α-Fe2O3 nanostructures with various morphologies were synthesized by adjusting the growth temperatures between 300 °C-450 °C to optimize their morphologies. α-Fe2O3 nanoflakes synthesized at 350 °C were superior field emitters with a low threshold field of 5.1 MV m-1, high current density of 63.4 mA cm-2, and stable emission, which demonstrated that α-Fe2O3 nanoflakes could be a promising material for application as field emitters.

Plasmonic Sensing Characteristics of Gold Nanorods with Large Aspect Ratios.

Plasmonic gold nanorods play important roles in nowadays state-of-the-art plasmonic sensing techniques. Most of the previous studies and applications focused on gold nanorods with relatively small aspect ratios, where the plasmon wavelengths are smaller than 900 nm. Gold nanorods with large aspect ratios are predicted to exhibit high refractive-index sensitivity (Langmir 2008, 24, 5233⁻5237), which therefore should be promising for the development of high-performance plasmonic chemical- and bio-sensors. In this study, we developed gold nanorods with aspect ratios over 7.9, which exhibit plasmon resonances around 1064 nm. The refractive index (RI) sensitivity of these nanorods have been evaluated by varying their dielectric environment, whereby a sensitivity as high as 473 nm/RIU (refractive index unit) can be obtained. Furthermore, we have demonstrated the large-aspect-ratio nanorods as efficient substrate for surface enhanced Raman spectroscopy (SERS), where an enhancement factor (EF) as high as 9.47 × 108 was measured using 4-methylbenzenethiol (4-MBT) as probe molecule. Finally, a type of flexible SERS substrate is developed by conjugating the gold nanorods with the polystyrene (PS) polymer. The results obtained in our study can benefit the development of plasmonic sensing techniques utilized in the near-infrared spectral region.

Room-Temperature Strong Light-Matter Interaction with Active Control in Single Plasmonic Nanorod Coupled with Two-Dimensional Atomic Crystals.

Strong light-matter coupling manifested by Rabi splitting has attracted tremendous attention due to its fundamental importance in cavity quantum-electrodynamics research and great potentials in quantum information applications. A prerequisite for practical applications of the strong coupling in future optoelectronic devices is an all-solid-state system exhibiting room-temperature Rabi splitting with active control. Here we realized such a system in heterostructure consisted of monolayer WS2 and an individual plasmonic gold nanorod. By taking advantages of the small mode volume of the nanorod and large transition dipole moment of the WS2 exciton, giant Rabi splitting energies of 91-133 meV can be achieved at ambient conditions, which only involve a small number of excitons. The strong light-matter coupling can be dynamically tuned either by electrostatic gating or temperature scanning. These findings can pave the way toward active nanophotonic devices operating at room temperature.

Epitaxial growth of multiwall carbon nanotube from stainless steel substrate and effect on electrical conduction and field emission.

The epitaxial growth of carbon nanotubes (CNTs) is an important subject of research. Recent attention has been paid to finding new strategies for the controlled growth of single-wall CNTs with a defined chirality. In addition, many potential applications require multiwall CNTs (MWCNTs) to grow vertically from the substrate and the interface property is crucial. Here, we report for the first time that MWCNTs can grow directly from the surface of a substrate by epitaxy, based on the experimental study of individual multiwall carbon nanotubes on a large-area stainless steel substrate, which is a very useful system for electrical and mechanical applications. In particular, evidence is given of the lattice matching between the MWCNT and the lattice of a hexagonal Cr2O3: (Fe, Mn) film formed on the surface of the substrate. Furthermore, a method is developed to increase the density of the MWCNTs; a mechanism of simultaneous top and bottom growth is proposed. The resultant significantly improved electrical transport and field emission properties are also presented, showing the Ohmic contact for electrical conduction and high performance in resisting the catastrophic cold-cathode vacuum breakdown of the CNTs.

Resonance Coupling in Silicon Nanosphere-J-Aggregate Heterostructures.

Due to their optical magnetic and electric resonances associated with the high refractive index, dielectric silicon nanoparticles have been explored as novel nanocavities that are excellent candidates for enhancing various light-matter interactions at the nanoscale. Here, from both of theoretical and experimental aspects, we explored resonance coupling between excitons and magnetic/electric resonances in heterostructures composed of the silicon nanoparticle coated with a molecular J-aggregate shell. The resonance coupling was originated from coherent energy transfer between the exciton and magnetic/electric modes, which was manifested by quenching dips on the scattering spectrum due to formation of hybrid modes. The influences of various parameters, including the molecular oscillation strength, molecular absorption line width, molecular shell thickness, refractive index of the surrounding environment, and separation between the core and shell, on the resonance coupling behaviors were scrutinized. In particular, the resonance coupling can approach the strong coupling regime by choosing appropriate molecular parameters, where an anticrossing behavior with a mode splitting of 100 meV was observed on the energy diagram. Most interestingly, the hybrid modes in such dielectric heterostructure can exhibit unidirectional light scattering behaviors, which cannot be achieved by those in plexcitonic nanoparticle composed of a metal nanoparticle core and a molecular shell.

Growth of large-scale boron nanowire patterns with identical base-up mode and in situ field emission studies of individual boron nanowire.

Boron nanowires (BNWs) are considered as an ideal optoelectronic nanomaterial, but controlling them in identical growth mode and large-area patterns is technically challenging. Here, large-scale BNW patterns with a uniform base-up growth mode are successfully fabricated by choosing Ni film as the catalyst. Moreover, they exhibit low turn-on field (4.3 V/µm) and excellent field emission uniformity (88%).

Realization of High Current Gain for Van der Waals MoS2/WSe2/MoS2 Bipolar Junction Transistor.

Two-dimensional (2D) materials have attracted great attention in the past few years and offer new opportunities for the development of high-performance and multifunctional bipolar junction transistors (BJTs). Here, a van der Waals BJT based on vertically stacked n+-MoS2/WSe2/MoS2 was demonstrated. The electrical performance of the device was investigated under common-base and common-emitter configurations, which show relatively large current gains of α ≈ 0.98 and ß ≈ 225. In addition, the breakdown characteristics of the vertically stacked n+-MoS2/WSe2/MoS2 BJT were investigated. An open-emitter base-collector breakdown voltage (BVCBO) of 52.9 V and an open-base collector-emitter breakdown voltage (BVCEO) of 40.3 V were observed under a room-temperature condition. With the increase in the operating temperature, both BVCBO and BVCEO increased. This study demonstrates a promising way to obtain 2D-material-based BJT with high current gains and provides a deep insight into the breakdown characteristics of the device, which may promote the applications of van der Waals BJTs in the fields of integrated circuits.

AC Characteristics of van der Waals Bipolar Junction Transistors Using an MoS2/WSe2/MoS2 Heterostructure.

Two-dimensional layered materials, characterized by their atomically thin thicknesses and surfaces that are free of dangling bonds, hold great promise for fabricating ultrathin, lightweight, and flexible bipolar junction transistors (BJTs). In this paper, a van der Waals (vdW) BJT was fabricated by vertically stacking MoS2, WSe2, and MoS2 flakes in sequence. The AC characteristics of the vdW BJT were studied for the first time, in which a maximum common emitter voltage gain of around 3.5 was observed. By investigating the time domain characteristics of the device under various operating frequencies, the frequency response of the device was summarized, which experimentally proved that the MoS2/WSe2/MoS2 BJT has voltage amplification capability in the 0-200 Hz region. In addition, the phase response of the device was also investigated. A phase inversion was observed in the low-frequency range. As the operating frequency increases, the relative phase between the input and output signals gradually shifts until it is in phase at frequencies exceeding 2.3 kHz. This work demonstrates the signal amplification applications of the vdW BJTs for neuromorphic computing and wearable healthcare devices.

Controlled Preparation of High Quality Bubble-Free and Uniform Conducting Interfaces of Vertical van der Waals Heterostructures of Arrays.

Sharp and clean interfaces of van der Waals (vdW) heterostructures are highly demanded in two-dimensional (2D) materials-based devices. However, current assembly methods usually cause interfacial bubbles and wrinkles, hindering carrier interlayer transport. The preparation of a large-scale vdW heterostructure with a bubble-free interface is still a challenge. Although many efforts have been made to eliminate bubbles, the evolution processes of the interfacial bubbles are rarely studied. Here, the interface bubble formation and evolution of the transferred 2D materials and their vdW heterostructure are systemically studied by the atomic force microscopy (AFM) technique and high-resolution surface current mapping. A thermal annealing procedure is developed to reduce the number of bubbles and to improve the quality of interfaces. In addition, influences of the interface residues and nanosteps on bubble evolution are also discussed. Further, we develop the polystyrene (PS)-mediated polydimethylsiloxane (PDMS) transfer technique to realize the high-quality transfer of heterostructure arrays. Finally, high-resolution surface current mapping results confirm that we can now produce highly uniform electrical conduction interfaces of heterojunctions. This study provides guidance for assembling high quality interfaces and paves the way for production of bubble-free heterostructure-based electronic devices with high performance and good uniformity.

Field-Emission Energy Distribution of Carbon Nanotube Film and Single Tube under High Current.

A narrow energy distribution is a prominent characteristic of field-emission cold cathodes. When applied in a vacuum electronic device, the cold cathode is fabricated over a large area and works under a high current and current density. It is interesting to see the energy distribution of the field emitter under such a working situation. In this work, the energy distribution spectra of a single carbon nanotube (CNT) and a CNT film were investigated across a range of currents, spanning from low to high. A consistent result indicated that, at low current emission, the CNT film (area: 0.585 mm2) exhibited a narrow electron energy distribution as small as 0.5 eV, similar to that of a single CNT, while the energy distribution broadened with increased current and voltage, accompanied by a peak position shift. The influencing factors related to the electric field, Joule heating, Coulomb interaction, and emission site over a large area were discussed to elucidate the underlying mechanism. The results provide guidance for the electron source application of nano-materials in cold cathode devices.

A Flexible and Wearable Photodetector Enabling Ultra-Broadband Imaging from Ultraviolet to Millimeter-Wave Regimes.

Flexible and miniaturized photodetectors, offering a fast response across the ultraviolet (UV) to millimeter (MM) wave spectrum, are crucial for applications like healthcare monitoring and wearable optoelectronics. Despite their potential, developing such photodetectors faces challenges due to the lack of suitable materials and operational mechanisms. Here, the study proposes a flexible photodetector composed of a monolayer graphene connected by two distinct metal electrodes. Through the photothermoelectric effect, these asymmetric electrodes induce electron flow within the graphene channel upon electromagnetic wave illumination, resulting in a compact device with ultra-broadband and rapid photoresponse. The devices, with footprints ranging from 3 × 20 µm2 to 50 × 20 µm2, operate across a spectrum from 325 nm (UV) to 1.19 mm (MM) wave. They demonstrate a responsivity (RV) of up to 396.4 ± 5.1 mV W-1, a noise-equivalent power (NEP) of 8.6 ± 0.1 nW Hz- 0.5, and a response time as small as 0.8 ± 0.1 ms. This device facilitates direct imaging of shielded objects and material differentiation under simulated human body-wearing conditions. The straightforward device architecture, aligned with its ultra-broadband operational frequency range, is anticipated to hold significant implications for the development of miniaturized, wearable, and portable photodetectors.

Effect of Crystallinity on the Field Emission Characteristics of Carbon Nanotube Grown on W-Co Bimetallic Catalyst.

Carbon nanotube (CNT) is an excellent field emission material. However, uniformity and stability are the key issues hampering its device application. In this work, a bimetallic W-Co alloy was adopted as the catalyst of CNT in chemical vapor deposition process. The high melting point and stable crystal structure of W-Co helps to increase the grown CNT diameter uniformity and homogeneous crystal structure. High-crystallinity CNTs were grown on the W-Co bimetallic catalyst. Its field emission characteristics demonstrated a low turn-on field, high current density, stable current stability, and uniform emission distribution. The Fowler-Nordheim (FN) and Seppen-Katamuki (SK) analyses revealed that the CNT grown on the W-Co catalyst has a relatively low work function and high field enhancement factor. The high crystallinity and homogeneous crystal structure of CNT also reduce the body resistance and increase the emission current stability and maximum current. The result provides a way to synthesis a high-quality CNT field emitter, which will accelerate the development of cold cathode vacuum electronic device application.