RESUMEN
We report on passive Q-switching action induced by a few-layer MoTe2 saturable absorber in an Yb:YCa4O(BO3)3 (Yb:YCOB) microchip laser. With a sapphire-based few-layer MoTe2 incorporated into the 4 mm long plane-parallel resonator of the Yb:YCOB microchip laser, efficient stable passively Q-switched operation was achieved under output couplings of 40%-70%, producing, at an incident pump power of 5.0 W, an average output power of 1.58 W at a repetition rate of 704 kHz with a slope efficiency of 36%; the pulse energy and peak power were respectively 2.25 µJ and 40.8 W, while the shortest pulse duration obtained was 52 ns.
RESUMEN
An experimental investigation was carried out to evaluate the potential of few-layer Bi2Te3 topological insulator in use as a saturable absorber for passive Q-switching of compact solid-state lasers in the 1-µm spectral region. By incorporating a sapphire-based few-layer Bi2Te3 sample into a Yb:LuPO4 laser that was formed with a 4-mm plane-parallel resonator, we realized efficient, high-power, high-repetition-rate pulsed laser operation. Depending on the output coupling utilized, single- or dual-wavelength laser action could be achieved. A maximum output power of 5.02 W at 1014.5 nm was produced at a pulse repetition rate of 1.67 MHz, with an optical-to-optical efficiency of 41% and a slope efficiency of 54%; while operating at 1004.9/1012.7 nm, the pulsed laser could produce an output power of 3.94 W at 1.38 MHz, with a pulse duration being as short as 34 ns. The largest pulse energy and highest peak power achieved were 3.0 µJ and 85.3 W. The results demonstrated in our experiment reveal the great potential of the few-layer Bi2Te3 topological insulator in the development of pulsed compact solid-state lasers in the 1-µm region.
RESUMEN
We demonstrate a Yb:LuPO4 miniature crystal laser that is formed with a 5 mm long plane-parallel resonator, and is passively Q-switched by a few-layer MoS2 saturable absorber. With 6.53 W of pump power absorbed, an average output power of 2.06 W at 1020.8 nm is generated at a pulse repetition rate of 429 kHz with a slope efficiency of 50%; the resulting pulse energy, duration, and peak power are respectively 4.8 µJ, 83 ns, and 57.8 W. While operating at 1010.5 nm, the laser is capable of producing an average output power of 1.53 W at a repetition rate of 870 kHz, with pulse duration being shortened to 61 ns. These results represent a significant progress in the development of Yb- or Nd-ion lasers passively Q-switched by two-dimensional MoS2.
RESUMEN
We report on a miniature Yb:LuPO4 crystal laser at 1.01 µm that is passively Q-switched with a sapphire-based few-layer WS2 saturable absorber, and that can be operated under very high output couplings (≥80%). With 12.6 W of pump power absorbed, an average output power of 4.35 W is generated at a repetition rate of 1.33 MHz with a slope efficiency of 47%. The maximum pulse energy and highest peak power achieved are 3.41 µJ and 110 W, respectively; while the shortest pulse duration obtained is 28.6 ns. To the best of our knowledge, these results represent the highest output power and shortest pulse duration ever achieved in the 1 µm region from solid-state lasers passively Q-switched by using two-dimensional saturable absorbers.