Evidence of Strong Orbital-Selective Spin-Orbital-Phonon Coupling in CrVO_{4}.

Coupling of orbital degree of freedom with a spin exchange, i.e., Kugel-Khomskii-type interaction (KK), governs a host of material properties, including colossal magnetoresistance, enhanced magnetoelectric response, and photoinduced high-temperature magnetism. In general, KK-type interactions lead to deviation in experimental observables of coupled Hamiltonian near or below the magnetic transition. Using diffraction and spectroscopy experiments, here we report anomalous changes in lattice parameters, electronic states, spin dynamics, and phonons at four times the Néel transition temperature (T_{N}) in CrVO_{4}. The temperature is significantly higher than other d-orbital compounds such as manganites and vanadates, where effects are limited to near or below T_{N}. The experimental observations are rationalized using first-principles and Green's function-based phonon and spin simulations that show unprecedentedly strong KK-type interactions via a superexchange process and an orbital-selective spin-phonon coupling coefficient at least double the magnitude previously reported for strongly coupled spin-phonon systems. Our results present an opportunity to explore the effect of KK-type interactions and spin-phonon coupling well above T_{N} and possibly bring various properties closer to application, for example, strong room-temperature magnetoelectric coupling.

Optical temperature sensing by tuning photoluminescence in a wide (visible to near infrared) wavelength range in a Eu3+-doped Bi-based relaxor ferroelectric.

The prevalent material design principles for optical thermometry primarily rely on thermally driven changes in the relative intensities of the thermally coupled levels (TCLs) of rare-earth-doped phosphor materials, where the maximum achievable sensitivity is limited by the energy gap between the TCLs. In this work, a new, to the best of our knowledge, approach to thermometric material design is proposed, which is based on temperature tuning of PL emission from the visible to the NIR region. We demonstrate a model ferroelectric phosphor, Eu3+-doped 0.94(Na1/2Bi1/2TiO3)-0.06(BaTiO3) (NBT-6BT), which, by virtue of the contrasting effects of temperature on PL signals from the host and Eu3+ intraband transitions, can achieve a relative thermal sensitivity as high as 3.05% K-1. This model system provides a promising alternative route for developing self-referencing optical thermometers with high thermal sensitivity and good signal discriminability.

Determination of Imprint Effects in Ferroelectrics from the Quantified Phase and Amplitude Response.

Piezoresponse force microscopy (PFM) is a robust characterization technique to explore ferroelectric properties at the nanoscale. However, the PFM signal can lead to misinterpretation of results due to the dominant electrostatic interaction between the tip and the sample. In this work, a detailed calibration process is presented and a procedure to identify the parasitic phase offset is demonstrated. To obtain artifact-free phase-amplitude loops, a methodology is developed by combining the outcomes from switching spectroscopy-PFM (SS-PFM) and Kelvin probe force microscopy (KPFM). It is demonstrated that the phase and amplitude loops obtained from SS-PFM at a specific read voltage, ascertained from the surface potential by KPFM, can convey accurate electromechanical information. These methodologies are applied to quantify the imprint voltage in BaTiO3 and BiFeO3, along with vertically aligned BaTiO3:Sm2O3 and BaTiO3:MgO nanocomposites. The variation of the imprint voltage measured under different tip voltages demonstrates the importance of selecting the correct read voltage in determining the local imprint voltage. Additionally, 2D imprint voltage maps in each domain of a BaTiO3 single crystal are obtained using the datacube-PFM technique, which allows pixel-by-pixel determination of artifact-free spatial variation of PFM phase-amplitude response.

Optical Control of In-Plane Domain Configuration and Domain Wall Motion in Ferroelectric and Ferroelastic Materials.

The sensitivity of ferroelectric domain walls to external stimuli makes them functional entities in nanoelectronic devices. Specifically, optically driven domain reconfiguration with in-plane polarization is advantageous and thus is highly sought. Here, we show the existence of in-plane polarized subdomains imitating a single domain state and reversible optical control of its domain wall movement in a single-crystal of ferroelectric BaTiO3. Similar optical control in the domain configuration of nonpolar ferroelastic material indicates that long-range ferroelectric polarization is not essential for the optical control of domain wall movement. Instead, flexoelectricity is found to be an essential ingredient for the optical control of the domain configuration, and hence, ferroelastic materials would be another possible candidate for nanoelectronic device applications.

Femtometer atomic displacement, the root cause for multiferroic behavior of CuO unearthed through polarized Raman spectroscopy.

Recently, CuO has been proposed as a potential multiferroic material with high transition temperature. Competing models based on spin current and ionic displacements are invoked to explain ferroelectricity in CuO. The theoretical model based on ionic displacement predicted very small displacement (∼10-5Å) along thebaxis. Experimentally detecting displacements of such a small amplitude in a particular direction is extremely challenging. Through our detailed angle resolved polarized Raman spectroscopy study on single crystal of CuO, we have validated the theoretical study and provided direct evidence of displacement along thebaxis. Our study provides important contribution in the high temperature multiferroic compounds and showed for the first time, the use of the polarized Raman scattering in detecting ionic displacements at the femtometer scale.