1.
Microsc Microanal
; 20(4): 1254-61, 2014 Aug.
Artículo
en Inglés
| MEDLINE
| ID: mdl-24698205
RESUMEN
A study by electron microscopy techniques of the structural and compositional properties of Al x Ga1-x N/GaN nanowire (NW) heterostructures on Si(111) is presented. Al x Ga1-x N depositions grown without catalyst by plasma-assisted molecular beam epitaxy were designed to form NWs in the range of 0.20