RESUMEN
Many metals form nanometer-thin self-passivating oxide layers upon exposure to the atmosphere, which affects a wide range of interfacial properties and shapes the way how metals interact with their environment. Such native oxide layers are commonly analyzed by X-ray photoelectron spectroscopy (XPS), which provides a depth-resolved chemical state and compositional analysis either by ion etching or modeling of the electron escape depths. The latter is commonly used to calculate the average thickness of a native oxide layer. However, the measurement of concentration profiles at the oxide-metal interface remains challenging. Here, a simple and accessible approach for the depth profiling of ultrathin oxide layers within single fixed-angle XPS spectra is proposed. Instead of using only one peak in the spectrum, as is usually the case, all peaks within the energy range of a standard lab device are utilized, thus resembling energy-resolved XPS without the need for a synchrotron. New models that allow the calculation of depth-resolved concentration profiles at the oxide-metal interface are derived and tested, which are also valid for angular- and energy-resolved XPS. The proposed method not only improves the accuracy of earlier approaches but also paves the way for a more holistic understanding of the XPS spectrum.