Lattice-matched AlInN/GaN bottom DBR impact on GaN-based vertical-cavity-surface-emitting laser diodes: systematical investigations.

In this paper, by using advanced numerical models, we investigate the impact of the AlN/GaN distributed Bragg reflector (DBR) and AlInN/GaN DBR on stimulated radiative recombination for GaN-based vertical-cavity-surface-emitting lasers (VCSELs). According to our results, when compared with the VCSEL with AlN/GaN DBR, we find that the VCSEL with AlInN/GaN DBR decreases the polarization-induced electric field in the active region, and this helps to increase the electron-hole radiative recombination. However, we also find that the AlInN/GaN DBR has a reduced reflectivity when compared with the AlN/GaN DBR with the same number of pairs. Furthermore, this paper suggests that more pairs of AlInN/GaN DBR will be set, which helps to even further increase the laser power. Hence, the 3 dB frequency can be increased for the proposed device. In spite of the increased laser power, the smaller thermal conductivity for AlInN than AlN results in the earlier thermal droop in the laser power for the proposed VCSEL.

On the origin for the hole confinement into apertures for GaN-based VCSELs with buried dielectric insulators.

A better lateral current confinement is essentially important for GaN-based vertical-cavity-surface-emitting lasers (VCSELs) to achieve lasing condition. Therefore, a buried insulator aperture is adopted. However, according to our results, we find that the current cannot be effectively laterally confined if the insulator layer is not properly selected, and this is because of the unique feature for GaN-based VCSELs grown on insulating substrates with both p-electrode and n-electrode on the same side. Our results indicate that the origin for the current confinement arises from lateral energy band bending in the p-GaN layer rather than the electrical resistivity for the buried insulator. The lateral energy band in the p-GaN layer can be more flattened by using a buried insulator with a properly larger dielectric constant. Thus, less bias can be consumed by the buried insulator, enabling better lateral current confinement. On the other hand, the bias consumption by the buried insulator is also affected by the insulator thickness, and we propose to properly decrease the insulator layer thickness for reducing the bias consumption therein and achieving better lateral current confinement. The improved lateral current confinement will correspondingly enhance the lasing power. Thanks to the enhanced lateral current confinement, the 3dB frequency will also be increased if proper buried insulators are adopted.

Enhancing the lateral current injection by modulating the doping type in the p-type hole injection layer for InGaN/GaN vertical cavity surface emitting lasers.

In this report, we propose GaN-based vertical cavity surface emitting lasers with a p-GaN/n-GaN/p-GaN (PNP-GaN) structured current spreading layer. The PNP-GaN current spreading layer can generate the energy band barrier in the valence band because of the modulated doping type, which is able to favor the current spreading into the aperture. By using the PNP-GaN current spreading layer, the thickness for the optically absorptive ITO current spreading layer can be reduced to decrease internal loss and then enhance the lasing power. Furthermore, we investigate the impact of the doping concentration, the thickness and the position for the inserted n-GaN layer on the lateral hole confinement capability, the lasing power, and the optimization strategy. Our investigations also report that the optimized PNP-GaN structure will suppress the thermal droop of the lasing power for our proposed VCSELs.