RESUMEN
Content-addressable memories (CAMs) allow searching a pattern, processing in parallel all the data stored. Beyond-CMOS technologies can provide new opportunities to improve CAM memories implementations both at the device and architectural level. In this article, we propose a ternary content-addressable memory cell based on skyrmion technology. The proposed memory cell is based on skyrmion racetrack memory. The cell is able to signal if the bit contained in the cell in form of skyrmion corresponds to an electrical input, the target of the search operation. The proposed design, verified by means of micromagnetic simulations, has an area of 0.054µm2and can perform a search operation in 3.3 ns with an energy of 10.5 fJ. The operation performed is non-destructive and does not require conversion between the magnetic and the electronic domains. For this reason, the designed cell has the potential to be used as a basic block for non-volatile CAM memories. Here, we propose also a layout structure to implement a CAM memory employing the proposed cell. This structure allows to achieve memory density comparable to traditional racetrack memories and execute at the same time CAM operations.
RESUMEN
Antiferromagnets are a class of magnetic materials of great interest in spintronic devices because of their stability and ultrafast dynamics. When interfaced with an organic molecular layer, antiferromagnetic (AF) films are expected to form a spinterface that can allow fine control of specific AF properties. In this paper, we investigate spinterface effects on CoO, an AF oxide. To access the magnetic state of the antiferromagnet, we couple it to a ferromagnetic Co film via an exchange bias (EB) effect. In this way, the formation of a spinterface is detected through changes induced on the CoO/Co EB system. We demonstrate that C60 and Gaq3 adsorption on CoO shifts its blocking temperature; in turn, an increase in both the EB fields and the coercivities is observed on the EB-coupled Co layer. Ab initio calculations for the CoO/C60 interface indicate that the molecular adsorption is responsible for a charge redistribution on the CoO layer that alters the occupation of the d orbitals of Co atoms and, to a smaller extent, the p orbitals of oxygen. As a result, the AF coupling between Co atoms in the CoO is enhanced. Considering the granular nature of CoO, a larger AF stability upon molecular adsorption is then associated with a larger number of AF grains that are stable upon reversal of the Co layer.
RESUMEN
Magnetic data storage and processing offer certain advances over conventional technologies, amongst which nonvolatility and low power operation are the most outstanding ones. Skyrmions are a promising candidate as a magnetic data carrier. However, the sputtering of skyrmion films and the control of the skyrmion nucleation, motion, and annihilation remains challenging. This work demonstrates that using optimized focused ion beam irradiation and annealing protocols enables the skyrmion phase in W/CoFeB/MgO thin films to be accessed easily. By analyzing ion-beam-engineered skyrmion hosting wires, excited by sub-100 ns current pulses, possibilities to control skyrmion nucleation, guide their motion, and control their annihilation unfold. Overall, the key elements needed to develop extensive skyrmion networks are presented.